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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Mounting Type | Package / Case | Surface Mount | Material | Dielectric Material | Housing material | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Case | Circuit Breaker Type | Coil resistance | Current type | Current Type | Data transfer rate | Design Features | Diameter after shrinkage | Diameter before shrinkage | Dielectric strength | Dielectric Strength | Drain Current-Max (ID) | Glue | Gross weight | Gross Weight | Ihs Manufacturer | Insulation voltage | Kind of channel | Kind of integrated circuit | Manufacturer Package Code | Maximum current | Maximum Power | Maximum switched power | Mfr | Mounting | Mounting Hole | Mounting hole size | Noal current | Nominal coil voltage | Nominal current | Nominal Current | Nominal voltage | Nominal Voltage | Number of switching cycles (electrical) | Number of Switching Cycles (electrical) | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Passband | Pickup voltage | Polarisation | Presence and type of backlight | Rohs Code | Shape/color of actuator | Shrinkage after diameter | Shrinkage before diameter | Shrinkage temperature | Switching scheme | Switching Scheme | Tape length | Thickness after shrinkage | Transition Frequency-Nom (fT) | Transport package size/quantity | Transport Package Size/Quantity | Transport packaging size/quantity | Transport Packaging size/quantity | Transport Packaging Size/Quantity | Type of integrated circuit | Type of transistor | Weight gross | Operating temperature | Operating Temperature | Packaging | Series | Size / Dimension | Tolerance | JESD-609 Code | Pbfree Code | Part Status | Termination | ECCN Code | Connector Type | Type | Terminal Finish | Color | Applications | Additional Feature | HTS Code | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Operating frequency | Operating Frequency | Working voltage | Contact resistance | Contact Resistance | Configuration | Insulation resistance | Insulation Resistance | Number of channels | Polarization | Impedance | Operating Mode | Case Connection | Quality Factor-Min (at L-nom) | Switch type | Switch Type | Transistor Application | Number of inputs | Bandwidth | Dropout voltage | Polarity/Channel Type | Operating temperature range | Operating Temperature Range | Rated current | Rated Current | Switching voltage | JEDEC-95 Code | Gain | Sampling Rate (Per Second) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Antenna Type | Power Dissipation-Max (Abs) | Shrinkage ratio | Shrink temperature | Isolation Voltage | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Rated voltage | Rated Voltage | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max | Saturation Current | Features | Operating voltage | Frequency (Hz) | Shrink Ratio | Diameter | Height | Length | Width | Thickness | Ratings |
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  | Mfr. Part #BCX70HTwicea Part #15963-375-BCX70H | Diotec Semiconductor AG |
Description: Transistor
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| Min.:1 Mult.:1 | - | Surface Mount | Nonstandard SMD | YES | Polyolefin | Paper, Metallized | - | - | - | - | 1 | - | - | - | - | - | - | - | 0.75 mm | 1.5 mm | - | - | - | - | 2.25 | - | DIOTEC SEMICONDUCTOR AG | - | - | - | - | - | - | - | KEMET | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Active | - | - | - | - | - | Yes | - | - | - | +80...+120 °C | - | - | - | 0.32 mm | 100 MHz | - | - | 105*20*16/2000 | - | - | - | - | - | - | -40°C ~ 125°C | Tape & Reel (TR);Cut Tape (CT);Digi-Reel® | SMP255 | 0.500" L x 0.453" W (12.70mm x 11.50mm) | ±20% | - | - | Active | Solder Pads | EAR99 | - | Heat-shrink tubing non-combustible | - | blue | Automotive, EMI, RFI Suppression | - | - | 10000 pF | - | - | 260 | - | compliant | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | - | 630V | - | - | - | - | - | - | NPN | -55...+125 °C | - | - | - | - | - | - | 0.272" (6.90mm) | - | - | - | - | - | - | 0.25 W | 2 : 1 | - | 310V | 0.2 A | 180 | - | - | - | - | 1 | Long Life | 600 V | - | - | - | - | 1 m | - | - | AEC-Q200, X2 | ||
| BCX70H | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIRA00DP-T1-GE3Twicea Part #534-375-SIRA00DP-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 100A I(D), 30V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| 3223
In Stock
| Min.:1 Mult.:1 | 20 Weeks | - | - | YES | Polyolefin | - | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | 100 A | - | 6.00 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | - | - | - | Yes | - | 2.0 mm | 4.0 mm | +80...+120 °C | - | - | - | 0.45 mm | - | - | - | 105*20*16/1000 | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | EAR99 | - | Tubular non-supporting combustion heat shrinkable tube | MATTE TIN | blue | - | - | - | - | DUAL | C BEND | 260 | - | not_compliant | 30 | - | - | R-PDSO-C5 | - | - | - | 600 V | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | - | SWITCHING | - | - | - | N-CHANNEL | -55...+125 °C | - | - | - | - | - | - | - | 0.001 Ω | 400 A | 30 V | 125 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | 2 : 1 | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | 1 m | - | - | - | |
| SIRA00DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI2318DS-T1-E3Twicea Part #534-375-SI2318DS-T1-E3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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| 158500
In Stock
| Min.:1 Mult.:1 | - | - | - | YES | Polyolefin | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | 4.0 mm | 8.0 mm | - | - | 3 A | - | 12.40 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | - | - | - | Yes | - | - | - | - | - | - | - | 0.6 mm | - | - | - | 105*20*16/500 | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | EAR99 | - | Non-flame-retardant heat shrink tubing | MATTE TIN | red | - | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G3 | Not Qualified | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | - | N-CHANNEL | -55...+125 °C | - | - | - | - | TO-236AB | - | - | 0.045 Ω | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | +80...+120 °C | - | - | - | - | - | 45 pF | - | 1 | - | 600 V | - | 2 : 1 | - | - | 1 m | - | - | - | |
| SI2318DS-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #BSH205G2RTwicea Part #17568-375-BSH205G2R | NXP Semiconductors |
BSH205G2 - 20 V, P-channel Trench MOSFET TO-236 3-Pin
Datasheet
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| 48000
In Stock
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | 3 | SILICON | 1 | SOP8 | - | - | - | - | 150Mbps | - | - | - | - | - | 2 A | high-adhesion glue | 1 g | - | NXP SEMICONDUCTORS | 3.75kV | unidirectional | digital isolator | SOT23 | - | - | - | - | SMD | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-236 | - | - | - | - | Yes | - | - | - | - | - | - | 33 m | - | - | - | - | 44*33*24/50 | - | - | interface | - | - | -40...125°C | - | - | - | - | - | - | - | - | - | EAR99 | - | Polyimide tape single-sided | - | yellow metallic | - | - | - | - | DUAL | GULL WING | NOT SPECIFIED | - | compliant | NOT SPECIFIED | 3 | AEC-Q101; IEC-60134 | R-PDSO-G3 | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | 2 | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | 1/1 | - | - | P-CHANNEL | - | - | - | - | - | TO-236AB | - | - | 0.17 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | dismantling at a temperature of 260 - 300 °C without a trace | - | - | - | - | - | - | 50 mm | 0.05 mm | - | |
| BSH205G2R | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRLML6344TRPBFTwicea Part #3717-375-IRLML6344TRPBF | International Rectifier |
Power Field-Effect Transistor, 5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
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| Min.:1 Mult.:1 | - | on connector | - | YES | - | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | 5 A | - | - | 3.21 | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | 50 W | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | 850-1900/900-1800 MHz | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | 45*31.5*22/1000 | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | EAR99 | SMA-M | - | Matte Tin (Sn) | - | - | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | 3 | - | R-PDSO-G3 | Not Qualified | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | vertical | 50 Ohm | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | 70/180 MHz | - | N-CHANNEL | - | -30....+75 °C | - | - | - | TO-236AB | 2.15 dBi | - | 0.029 Ω | 25 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | GSM stubby antenna | 1.3 W | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | 27.5 mm | - | - | - | - | ||
| IRLML6344TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRLML9303TRPBFTwicea Part #3717-375-IRLML9303TRPBF | International Rectifier |
Power Field-Effect Transistor, 2.3A I(D), 30V, 0.165ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
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| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | 2.3 A | - | 25.83 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | 24 mm | 3 Amin | - | - | - | - | - | ≥10000 | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MICRO-3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | - | - | - | LED 12 V | Yes | round/white | - | - | - | no(nc)+nc(no) | - | - | - | - | 42*28*23.5/300 | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | EAR99 | - | - | Matte Tin (Sn) | - | - | - | - | - | DUAL | GULL WING | 260 | 41 mm | compliant | 30 | 3 | - | R-PDSO-G3 | Not Qualified | - | - | - | ≤20 mΩ | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | - | P-CHANNEL | -25…+85 °C | - | - | - | 12 (DC) V | TO-236AB | - | - | 0.165 Ω | 12 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 1.25 W | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | 33 mm | - | - | - | - | - | ||
| IRLML9303TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF7389TRPBFTwicea Part #3717-375-IRF7389TRPBF | International Rectifier |
Description: Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
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| 10000
In Stock
| Min.:1 Mult.:1 | - | - | - | YES | - | - | plastic | 2.2 g | 8 | SILICON | 2 | - | - | 720 Ohm | - | - | - | - | - | - | - | - | 7.3 A | - | 2.72 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | 2 A | - | 62.5 VA/ 30 W | - | - | - | - | - | 12 V | - | - | - | - | ≥9x10(4) | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | 9.0 V | - | - | Yes | - | - | - | - | SPDT; form 1C | - | - | - | - | - | - | 34*30*27/500 | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | EAR99 | - | RHD23 series electromagnetic relay | MATTE TIN | - | - | HIGH RELIABILITY, AVALANCHE RATED | - | - | DUAL | GULL WING | 260 | 12.5 mm | unknown | 30 | - | - | R-PDSO-G8 | Not Qualified | - | - | - | ≤100 mOhm | - | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | 1.2 V | N-CHANNEL AND P-CHANNEL | -40...+90 °C | - | 0.5 (125 VAC); 1 (30 VDC) A | - | 250/ 125 (AC)/ 30 (DC) V | MS-012AA | - | - | 0.029 Ω | 30 A | 30 V | 82 mJ | METAL-OXIDE SEMICONDUCTOR | - | 2.5 W | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | 10 mm | - | 7.5 mm | - | - | |
| IRF7389TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF9630STwicea Part #534-375-IRF9630S | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN
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| 2
In Stock
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 1000 (50 Hz, 1 min.) V | - | 6.5 A | - | 7.47 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | 5 A | - | AC: 250/125 V | - | ≥100000 | - | 150 °C | - | PLASTIC/EPOXY | SMD-220, 3 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | D2PAK | - | - | - | - | No | - | - | - | - | OFF-(ON) SPST 2P | - | - | - | - | - | - | 52*24*38/1500 | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | - | TIN LEAD | - | - | - | - | - | SINGLE | GULL WING | - | 28 (body) mm | unknown | - | 3 | - | R-PSSO-G2 | Not Qualified | ≤25 (electrical) cycles/min. | - | - | ≤30 mOhm | - | SINGLE WITH BUILT-IN DIODE | ≥100 (at Uinsp.dc=500 V) MOhm | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | KW7 series micro switch | - | SWITCHING | - | - | - | P-CHANNEL | -25...+85 °C | - | - | - | - | TO-263AB | - | - | 0.8 Ω | 26 A | 200 V | 500 mJ | METAL-OXIDE SEMICONDUCTOR | - | 74 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 16 mm | - | 10.5 mm | - | - | |
| IRF9630S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #VN2222LLTwicea Part #16664-375-VN2222LL | Motorola Semiconductor Products |
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
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| 2031
In Stock
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | green button Ф13 mm | - | - | - | 1000 (50 Hz, 1 min) V | 0.15 A | - | - | 17.70 | MOTOROLA INC | - | - | - | - | - | - | - | - | - | 12 mm | - | - | - | - | 5 A | - | AC: 250/ 125 V | - | 100000 min | 150 °C | - | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-T3 | ROUND | CYLINDRICAL | Transferred | - | - | - | - | - | No | - | - | - | - | - | ON- (ON) SPDT 3P | - | - | - | - | - | - | 50*30*30/500 | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | BOTTOM | THROUGH-HOLE | - | 41 (total) mm | unknown | - | - | - | O-PBCY-T3 | Not Qualified | - | 25 (electrical) cycles/min max | - | - | 30 mOhm max | SINGLE WITH BUILT-IN DIODE | - | 100 (at Uinsp.dc = 500 V) MOhm min | - | - | - | ENHANCEMENT MODE | - | - | - | Micro switch series KW3 with button | SWITCHING | - | - | - | N-CHANNEL | - | -25...+85 °C | - | - | - | TO-226AA | - | - | 7.5 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | 0.4 W | - | - | - | - | - | - | - | 5 pF | - | - | - | - | - | - | - | 44 mm | - | 13 mm | - | - | |
| VN2222LL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF7103TRPBFTwicea Part #3717-375-IRF7103TRPBF | International Rectifier |
Description: Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | 8 | SILICON | 2 | - | - | - | - | - | - | - | - | - | - | - | 3 A | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | EAR99 | - | - | MATTE TIN | - | - | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | - | - | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | 0.13 Ω | - | 50 V | - | METAL-OXIDE SEMICONDUCTOR | - | 2 W | - | - | - | - | - | - | - | - | 2 W | 1 | - | - | - | - | - | - | - | - | - | - | ||
| IRF7103TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SUD50N04-8M8P-4GE3Twicea Part #534-375-SUD50N04-8M8P-4GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 14A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| 12500
In Stock
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | 14 A | - | 0.01 g | - | VISHAY INTERTECHNOLOGY INC | - | enhanced | - | - | - | - | - | - | SMD | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | unipolar | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-MOSFET | - | - | - | - | - | - | - | e3 | - | - | - | EAR99 | - | - | Matte Tin (Sn) | - | - | - | - | - | SINGLE | GULL WING | 260 | - | not_compliant | 30 | - | - | R-PSSO-G2 | Not Qualified | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | - | SWITCHING | - | - | - | N-CHANNEL | - | - | - | - | - | TO-252 | - | - | 0.0088 Ω | 100 A | 40 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | - | 48.1 W | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | |
| SUD50N04-8M8P-4GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #VN2222LLTwicea Part #17802-375-VN2222LL | Temic Semiconductors |
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | 0.23 A | - | 0.01 g | - | TEMIC SEMICONDUCTORS | - | enhanced | - | - | - | - | - | - | SMD | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | TO-226AA (TO-92), 3 PIN | ROUND | CYLINDRICAL | Transferred | - | - | - | unipolar | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-MOSFET | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | LOW THRESHOLD | - | - | BOTTOM | WIRE | - | - | unknown | - | - | - | O-PBCY-W3 | Not Qualified | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | - | N-CHANNEL | - | - | - | - | - | TO-226AA | - | - | 7.5 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | 5 pF | - | - | - | - | - | - | - | - | - | - | - | - | ||
| VN2222LL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #VN2222LLTwicea Part #157-375-VN2222LL | Calogic Inc |
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-226AA, 3 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | 0.23 A | - | - | - | CALOGIC LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-W3 | ROUND | CYLINDRICAL | Obsolete | TO-92 | - | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e0 | No | - | - | EAR99 | - | - | TIN LEAD | - | - | - | 8541.21.00.95 | - | BOTTOM | WIRE | - | - | compliant | - | 3 | - | O-PBCY-W3 | Not Qualified | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | - | N-CHANNEL | - | - | - | - | - | TO-92 | - | - | 7.5 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | 0.4 W | - | - | - | - | - | - | - | 5 pF | - | - | - | - | - | - | - | - | - | - | - | - | ||
| VN2222LL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI2392ADS-T1-GE3Twicea Part #534-375-SI2392ADS-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 3.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Datasheet
Compare
| 3000
In Stock
| Min.:1 Mult.:1 | 28 Weeks | - | - | YES | - | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | 3.1 A | - | 1 g | - | VISHAY INTERTECHNOLOGY INC | - | enhanced | - | - | - | - | - | - | SMD | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | unipolar | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | N-MOSFET | - | - | - | - | - | - | - | e3 | - | - | - | EAR99 | - | - | Matte Tin (Sn) | - | - | - | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G3 | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | - | N-CHANNEL | - | - | - | - | - | TO-236AB | - | - | 0.126 Ω | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | 2.5 W | - | - | - | - | - | - | - | 14 pF | - | 1 | - | - | - | - | - | - | - | - | - | - | |
| SI2392ADS-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #VN2222LLTwicea Part #233-375-VN2222LL | Diodes Incorporated |
Description: Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3PIN
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | 3 | SILICON | 1 | - | - | - | DC and AC | - | - | - | - | - | - | - | 0.15 A | - | - | - | DIODES INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-W3 | ROUND | CYLINDRICAL | Obsolete | TO-92 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 58*35*35/2000 | - | - | - | - | 11.10 | -10...+60 °C | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | BOTTOM | WIRE | - | - | unknown | - | 3 | - | O-PBCY-W3 | Not Qualified | - | - | - | - | - | SINGLE | - | - | - | - | - | ENHANCEMENT MODE | - | - | Automatic switch series L-MZ | - | - | - | - | - | N-CHANNEL | - | - | 10 A | - | - | TO-92 | - | - | 7.5 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | 125/250 (AC); 32 (DC) V | - | 5 pF | - | - | - | - | 50/60 | - | - | - | - | - | - | - | ||
| VN2222LL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #VN2222LLTwicea Part #3417-375-VN2222LL | Sipex Corporation |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | - | - | 1 | - | - | - | - | AC/DC | - | - | - | - | - | - | 0.099 A | - | - | 17.10 | SIPEX CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | - | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | - | - | 34*29*33/1000 | - | - | - | - | -10...+60 °C | - | - | - | - | e0 | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | RUICHI L-MZ Series Automatic Circuit Breaker | - | - | - | - | N-CHANNEL | - | - | - | 20 A | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | 0.4 W | - | - | - | - | - | - | 125/250 (AC); 32 (DC) V | - | - | - | - | - | 50/60 | - | - | - | - | - | - | - | ||
| VN2222LL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI4840BDY-T1-E3Twicea Part #534-375-SI4840BDY-T1-E3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 19A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
Datasheet
Compare
| 2500
In Stock
| Min.:1 Mult.:1 | - | - | - | YES | - | - | - | - | 8 | SILICON | 1 | - | RUICHI L-MZ Series Automatic Circuit Breaker | - | - | AC/DC | - | - | - | - | - | - | 19 A | - | - | 10.20 | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 30 A | - | 125/ 250 (AC); 32 (DC) V | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | 36*33*22/1000 | - | - | - | - | - | - | - | -10...+60 °C | - | - | - | - | e3 | - | - | - | EAR99 | - | - | MATTE TIN | - | - | - | - | - | DUAL | GULL WING | 260 | - | not_compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | - | - | - | N-CHANNEL | - | - | - | - | - | MS-012AA | - | - | 0.009 Ω | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | - | 6 W | - | - | - | - | - | - | - | - | - | 1 | - | - | 50/60 | - | - | - | - | - | - | - | |
| SI4840BDY-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #VN2222LLTwicea Part #4926-375-VN2222LL | Zetex / Diodes Inc |
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3PIN
Datasheet
Compare
| 5000
In Stock
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | 0.15 A | - | - | - | ZETEX PLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-W3 | ROUND | CYLINDRICAL | Transferred | - | - | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | - | TIN LEAD | - | - | - | - | - | BOTTOM | WIRE | 235 | - | unknown | 10 | - | - | O-PBCY-W3 | Not Qualified | - | - | - | - | - | SINGLE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | TO-92 | - | - | 7.5 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | 0.4 W | - | - | - | - | - | - | - | 5 pF | - | - | - | - | - | - | - | - | - | - | - | - | |
| VN2222LL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #VN2222LLTwicea Part #534-375-VN2222LL | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
Compare
| 7000
In Stock
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | 0.23 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | - | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | ENHANCEMENT MODE | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | - | 0.8 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| VN2222LL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFP4868PBFTwicea Part #3717-375-IRFP4868PBF | International Rectifier |
Power Field-Effect Transistor, 70A I(D), 300V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | NO | - | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | 70 A | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | R-PSFM-T3 | - | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | - | SWITCHING | - | - | - | N-CHANNEL | - | - | - | - | - | TO-247AC | - | - | 0.032 Ω | 280 A | 300 V | 1093 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFP4868PBF |
Index :
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