SI2392ADS-T1-GE3 Tech Specifications

Vishay  SI2392ADS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 28 Weeks
Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Type of transistor N-MOSFET
Polarisation unipolar
Mounting SMD
Kind of channel enhanced
Gross weight 1 g
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Drain Current-Max (ID) 3.1 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-236AB
Drain-source On Resistance-Max 0.126 Ω
DS Breakdown Voltage-Min 100 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2.5 W
Feedback Cap-Max (Crss) 14 pF
Saturation Current 1
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