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IRF7389TRPBF Tech Specifications

International Rectifier  IRF7389TRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount YES
Housing material plastic
Weight 2.2 g
Number of Terminals 8Terminals
Transistor Element Material SILICON
Exterior Housing Material 2
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Drain Current-Max (ID) 7.3 A
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Coil resistance 720 Ohm
Maximum current 2 A
Gross weight 2.72
Transport packaging size/quantity 34*30*27/500
Switching scheme SPDT; form 1C
Number of switching cycles (electrical) ≥9x10(4)
Maximum switched power 62.5 VA/ 30 W
Nominal coil voltage 12 V
Pickup voltage 9.0 V
JESD-609 Code e3
Pbfree Code Yes
ECCN Code EAR99
Type RHD23 series electromagnetic relay
Terminal Finish MATTE TIN
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Depth 12.5 mm
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Contact resistance ≤100 mOhm
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Dropout voltage 1.2 V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Operating temperature range -40...+90 °C
Rated current 0.5 (125 VAC); 1 (30 VDC) A
Switching voltage 250/ 125 (AC)/ 30 (DC) V
JEDEC-95 Code MS-012AA
Drain-source On Resistance-Max 0.029 Ω
Pulsed Drain Current-Max (IDM) 30 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 82 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2.5 W
Saturation Current 1
Height 10 mm
Width 7.5 mm
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IRF7389TRPBF Documents

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