SIRA00DP-T1-GE3 Tech Specifications

Vishay  SIRA00DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 20 Weeks
Surface Mount YES
Material Polyolefin
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Drain Current-Max (ID) 100 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Shrinkage before diameter 4.0 mm
Shrinkage after diameter 2.0 mm
Thickness after shrinkage 0.45 mm
Shrinkage temperature +80...+120 °C
Gross weight 6.00
Transport packaging size/quantity 105*20*16/1000
JESD-609 Code e3
ECCN Code EAR99
Type Tubular non-supporting combustion heat shrinkable tube
Terminal Finish MATTE TIN
Color blue
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-C5
Working voltage 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Operating temperature range -55...+125 °C
Drain-source On Resistance-Max 0.001 Ω
Pulsed Drain Current-Max (IDM) 400 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 125 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Shrinkage ratio 2 : 1
Saturation Current 1
Length 1 m
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