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SUD50N04-8M8P-4GE3 Tech Specifications

Vishay  SUD50N04-8M8P-4GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount YES
Number of Terminals 2Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Type of transistor N-MOSFET
Polarisation unipolar
Mounting SMD
Kind of channel enhanced
Gross weight 0.01 g
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Drain Current-Max (ID) 14 A
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-252
Drain-source On Resistance-Max 0.0088 Ω
Pulsed Drain Current-Max (IDM) 100 A
DS Breakdown Voltage-Min 40 V
Avalanche Energy Rating (Eas) 45 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 48.1 W
Saturation Current 1
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SUD50N04-8M8P-4GE3 Documents

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