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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Capacitor application | Capacitors features | Capacitors series | Case - inch | Case - mm | Completeness | Conform to the norm | Date Of Intro | Dielectric strength | Drain Current-Max (ID) | Fire resistance class | Gross weight | Ihs Manufacturer | Insulator material | Kind of capacitor | Manufacturer Package Code | Maximum current | Mounting | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transport packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of capacitor | Operating temperature | Tolerance | JESD-609 Code | Pbfree Code | ECCN Code | Connector type | Terminal Finish | Additional Feature | Capacitance | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Dielectric | Contact resistance | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Operating temperature range | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Feedback Cap-Max (Crss) | Saturation Current | Operating voltage | Height | Width |
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  | Mfr. Part #IRF710PBFTwicea Part #534-375-IRF710PBF | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| 20000
In Stock
| Min.:1 Mult.:1 | 17 Weeks, 4 Days | NO | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 2 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | Yes | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | 260 | - | compliant | 30 | 3 | - | R-PSFM-T3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-220AB | 3.6 Ω | 6 A | 400 V | 120 mJ | METAL-OXIDE SEMICONDUCTOR | 36 W | - | - | - | - | - | |
| IRF710PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI2312BDS-T1-E3Twicea Part #534-375-SI2312BDS-T1-E3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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| 3000
In Stock
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 3.9 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | TO-236AB | 0.031 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.75 W | - | 1 | - | - | - | |
| SI2312BDS-T1-E3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIHB24N80AE-GE3Twicea Part #534-375-SIHB24N80AE-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor,
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| 3000
In Stock
| Min.:1 Mult.:1 | 18 Weeks | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | Active | - | Yes | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| SIHB24N80AE-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFH5020TRPBFTwicea Part #3717-375-IRFH5020TRPBF | International Rectifier |
Power Field-Effect Transistor, 5.1A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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| 200
In Stock
| Min.:1 Mult.:1 | - | YES | 5 | SILICON | 1 | - | - | KAM | 0603 | 1608 | - | - | - | - | 5.1 A | - | 0.029 g | INTERNATIONAL RECTIFIER CORP | - | MLCC | - | - | SMD | 150 °C | - | PLASTIC/EPOXY | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | Yes | - | - | - | ceramic | -55...125°C | ±1% | e3 | - | EAR99 | - | Matte Tin (Sn) | HIGH RELIABILITY | 0.1nF | DUAL | NO LEAD | 260 | - | compliant | 30 | 8 | - | R-PDSO-N5 | Not Qualified | C0G (NP0) | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | - | 0.055 Ω | 63 A | 200 V | 320 mJ | METAL-OXIDE SEMICONDUCTOR | 8.3 W | - | - | 50V | - | - | |
| IRFH5020TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF740STRLPBFTwicea Part #534-375-IRF740STRLPBF | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
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| 21
In Stock
| Min.:1 Mult.:1 | 8 Weeks | YES | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 10 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) | AVALANCHE RATED | - | SINGLE | GULL WING | 260 | - | compliant | 30 | 3 | - | R-PSSO-G2 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | - | 0.55 Ω | 40 A | 400 V | 520 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | 1 | - | - | - | |
| IRF740STRLPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFR9120NTwicea Part #376-375-IRFR9120N | Infineon Technologies AG |
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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| 2000
In Stock
| Min.:1 Mult.:1 | - | YES | 2 | SILICON | 1 | - | - | KAM | 0805 | 2012 | - | - | - | - | 6.6 A | - | 0.028 g | INFINEON TECHNOLOGIES AG | - | MLCC | - | - | SMD | 150 °C | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | - | No | - | - | - | ceramic | -55...125°C | ±1% | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 1nF | SINGLE | GULL WING | 240 | - | compliant | 30 | - | - | R-PSSO-G2 | Not Qualified | C0G (NP0) | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | - | TO-252AA | 0.48 Ω | 26 A | 100 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | 1 | 50V | - | - | |
| IRFR9120N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFL4310TRPBFTwicea Part #3717-375-IRFL4310TRPBF | International Rectifier |
Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
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| 9600
In Stock
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | - | - | KAF | 1812 | 4532 | - | - | - | - | 1.6 A | - | 0.028 g | INTERNATIONAL RECTIFIER CORP | - | MLCC | - | - | SMD | 150 °C | -55 °C | PLASTIC/EPOXY | SOT-223, 3 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | TO-261AA | Yes | - | - | - | ceramic | -55...125°C | ±10% | e3 | Yes | EAR99 | - | Matte Tin (Sn) | HIGH RELIABILITY | 10nF | SINGLE | GULL WING | 260 | - | not_compliant | 30 | 4 | - | R-PSSO-G3 | Not Qualified | X7R | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-261AA | 0.2 Ω | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | - | 1 | 1.5kV | - | - | |
| IRFL4310TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUK7Y153-100EXTwicea Part #17568-375-BUK7Y153-100EX | NXP Semiconductors |
Description: BUK7Y153-100E - N-channel 100 V, 153 mΩ standard level MOSFET in LFPAK56 SOIC 4-Pin
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| 52388
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | 1 | - | - | - | - | - | - | - | - | - | 9.4 A | - | - | NXP SEMICONDUCTORS | - | - | SOT669 | - | - | 175 °C | - | - | - | - | - | Transferred | SOIC | Yes | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | compliant | - | 4 | - | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 37.3 W | - | - | - | - | - | |
| BUK7Y153-100EX | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #AUIRF7416QTRTwicea Part #3717-375-AUIRF7416QTR | International Rectifier |
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
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| Min.:1 Mult.:1 | - | YES | 8 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 10 A | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | AVALANCHE RATED, HIGH RELIABILITY | - | DUAL | GULL WING | - | - | compliant | - | 8 | - | R-PDSO-G8 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | - | MS-012AA | 0.02 Ω | 45 A | 30 V | 370 mJ | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | 2 | - | - | - | ||
| AUIRF7416QTR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFB3207PBFTwicea Part #3717-375-IRFB3207PBF | International Rectifier |
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| 9600
In Stock
| Min.:1 Mult.:1 | - | NO | 3 | SILICON | 1 | automobile electronics | flexible terminations | KAF | 1206 | 3216 | - | AEC Q200 | - | - | 75 A | - | 0.03 g | INTERNATIONAL RECTIFIER CORP | - | MLCC | - | - | SMD | 150 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | Yes | - | - | - | ceramic | -55...125°C | ±10% | e3 | Yes | EAR99 | - | MATTE TIN OVER NICKEL | - | 0.47µF | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | - | R-PSFM-T3 | Not Qualified | X7R | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.0045 Ω | 720 A | 75 V | 910 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | 50V | - | - | |
| IRFB3207PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI4838DY-T1-GE3Twicea Part #534-375-SI4838DY-T1-GE3 | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 1.7A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
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| 12833
In Stock
| Min.:1 Mult.:1 | 9 Weeks | YES | 8 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 1.7 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | End Of Life | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | 0.003 Ω | - | 12 V | - | METAL-OXIDE SEMICONDUCTOR | 3.5 W | - | 1 | - | - | - | |
| SI4838DY-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI2323DS-T1-E3Twicea Part #534-375-SI2323DS-T1-E3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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| 20056
In Stock
| Min.:1 Mult.:1 | - | YES | 3 | SILICON | 1 | - | - | KAF | 1206 | 3216 | - | - | - | - | 3.7 A | - | 0.063 g | VISHAY INTERTECHNOLOGY INC | - | MLCC | - | - | SMD | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | ceramic | -55...125°C | ±5% | e3 | - | EAR99 | - | MATTE TIN | - | 2.7nF | DUAL | GULL WING | 260 | - | compliant | 30 | - | - | R-PDSO-G3 | Not Qualified | X7R | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | - | TO-236AB | 0.039 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | 140 pF | 1 | 200V | - | - | |
| SI2323DS-T1-E3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SQJ570EP-T1_GE3Twicea Part #534-375-SQJ570EP-T1_GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 15A I(D), 100V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
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| 9000
In Stock
| Min.:1 Mult.:1 | 25 Weeks | YES | 4 | SILICON | 2 | - | - | KAF | 1206 | 3216 | - | - | - | - | 15 A | - | 0.055 g | VISHAY INTERTECHNOLOGY INC | - | MLCC | - | - | SMD | 175 °C | -55 °C | PLASTIC/EPOXY | SO-8L, 4 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | 65 ns | 25 ns | ceramic | -55...125°C | ±10% | - | - | EAR99 | - | - | - | 2.2µF | SINGLE | GULL WING | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | AEC-Q101 | R-PSSO-G4 | - | X7R | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL AND P-CHANNEL | - | - | - | 0.045 Ω | 40 A | 100 V | 8.4 mJ | METAL-OXIDE SEMICONDUCTOR | - | 25 pF | - | 100V | - | - | |
| SQJ570EP-T1_GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIRA14BDP-T1-GE3Twicea Part #534-375-SIRA14BDP-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor,
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| 88888
In Stock
| Min.:1 Mult.:1 | 20 Weeks | YES | 5 | SILICON | 1 | - | - | - | - | - | - | - | 2018-10-02 | - | 64 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | , | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | 40 ns | 30 ns | - | - | - | - | - | EAR99 | - | - | - | - | DUAL | FLAT | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | - | R-PDSO-F5 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | - | 0.00538 Ω | 130 A | 30 V | 11.3 mJ | METAL-OXIDE SEMICONDUCTOR | 36 W | 37 pF | - | - | - | - | |
| SIRA14BDP-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SQJ407EP-T1_GE3Twicea Part #534-375-SQJ407EP-T1_GE3 | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 60A I(D), 30V, 0.0044ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
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| 3000
In Stock
| Min.:1 Mult.:1 | 20 Weeks | YES | 4 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 60 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | SO-8L, 4 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | SINGLE | GULL WING | 260 | - | unknown | - | - | AEC-Q101 | R-PSSO-G4 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | P-CHANNEL | - | - | - | 0.0044 Ω | 155 A | 30 V | 84 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | |
| SQJ407EP-T1_GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIR872ADP-T1-GE3Twicea Part #534-375-SIR872ADP-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| 400
In Stock
| Min.:1 Mult.:1 | 28 Weeks | YES | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 53.7 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | Yes | - | - | - | - | - | - | - | Yes | EAR99 | - | - | - | - | DUAL | C BEND | 260 | - | compliant | 30 | - | - | R-PDSO-C5 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | - | - | 0.018 Ω | 100 A | 150 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | |
| SIR872ADP-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SQJ409EP-T1_GE3Twicea Part #534-375-SQJ409EP-T1_GE3 | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 60A I(D), 40V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
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| 11600
In Stock
| Min.:1 Mult.:1 | 20 Weeks | YES | 4 | SILICON | 1 | - | - | KAF | 0603 | 1608 | - | - | - | - | 60 A | - | 0.028 g | VISHAY INTERTECHNOLOGY INC | - | MLCC | - | - | SMD | 175 °C | -55 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | ceramic | - | - | - | - | EAR99 | - | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | AEC-Q101 | R-PSSO-G4 | - | X7R | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | P-CHANNEL | - | - | - | 0.007 Ω | 150 A | 40 V | 84 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | |
| SQJ409EP-T1_GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SUM90P10-19L-E3Twicea Part #534-375-SUM90P10-19L-E3 | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 17.2A I(D), 100V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN
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| 749
In Stock
| Min.:1 Mult.:1 | 10 Weeks, 4 Days | YES | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 17.2 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | ROHS COMPLIANT, TO-263, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | SINGLE | GULL WING | 260 | - | not_compliant | 30 | - | - | R-PSSO-G2 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | - | TO-263AB | 0.019 Ω | 90 A | 100 V | 245 mJ | METAL-OXIDE SEMICONDUCTOR | 375 W | - | 1 | - | - | - | |
| SUM90P10-19L-E3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIA471DJ-T1-GE3Twicea Part #534-375-SIA471DJ-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor,
Datasheet
Compare
| 14850
In Stock
| Min.:1 Mult.:1 | 12 Weeks | YES | 6 | SILICON | 1 | - | - | - | - | - | - | - | 2018-11-03 | - | 30.3 A | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | Yes | - | 116 ns | 240 ns | - | - | - | - | - | EAR99 | - | - | - | - | DUAL | NO LEAD | NOT SPECIFIED | - | unknown | NOT SPECIFIED | - | - | S-PDSO-N6 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | - | - | 0.014 Ω | 70 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 19.2 W | 55 pF | - | - | - | - | |
| SIA471DJ-T1-GE3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SQJ476EP-T1_GE3Twicea Part #534-375-SQJ476EP-T1_GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor,
Datasheet
Compare
| 9000
In Stock
| Min.:1 Mult.:1 | 25 Weeks | YES | 4 | SILICON | 1 | - | - | KAF | 1206 | 3216 | 3p plug + 3p socket | - | 2016-07-18 | 600 V | 23 A | UL94 V0 | 0.032 g | VISHAY INTERTECHNOLOGY INC | PBT | MLCC | - | 30 A | SMD | 175 °C | -55 °C | PLASTIC/EPOXY | SO-8L, 4 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | 42*28*23.5/200 | - | - | ceramic | -55...125°C | ±10% | - | - | EAR99 | High power connector set TX30 for radio controlled models, three-pin | - | - | 1µF | SINGLE | GULL WING | NOT SPECIFIED | plug - 26; socket - 23.2 mm | compliant | NOT SPECIFIED | - | - | R-PSSO-G4 | - | X7R | ≤0.6 mОm | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | -40...+120 °C | 15 A | - | 0.038 Ω | 45 A | 100 V | 16 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | 50V | plug - 12.20; socket - 12.30 mm | 24.7 mm | |
| SQJ476EP-T1_GE3 |
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