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SI2312BDS-T1-E3 Tech Specifications

Vishay  SI2312BDS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Drain Current-Max (ID) 3.9 A
Package Description TO-236, SOT-23, 3 PIN
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Life Cycle Code Not Recommended
Rohs Code Yes
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-236AB
Drain-source On Resistance-Max 0.031 Ω
DS Breakdown Voltage-Min 20 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.75 W
Saturation Current 1
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SI2312BDS-T1-E3 Documents

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