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SIR872ADP-T1-GE3 Tech Specifications
Vishay SIR872ADP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 28 Weeks | |
| Surface Mount | YES | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Drain Current-Max (ID) | 53.7 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-C5 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| DS Breakdown Voltage-Min | 150 V | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
SIR872ADP-T1-GE3 Documents
Download datasheets and manufacturer documentation for SIR872ADP-T1-GE3
- Datasheets5b49bd746cea635a15446b2fc3707a99.pdf
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