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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Surface Mount | Material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Application Area | Characteristic | Characteristics | Chip | Cross | Cross type | Current consumption | Description | Drain Current-Max (ID) | Feature | Gross weight | Gross Weight | Ihs Manufacturer | Inner Diameter | Manufacturer Package Code | Maximum Current | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protection | Recess | Rohs Code | Support | Thread | Transport package size/quantity | Transport packaging size/quantity | Transport Packaging size/quantity | Transport Packaging Size/Quantity | Working Load | JESD-609 Code | Pbfree Code | ECCN Code | Connector Type | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply voltage | Depth | Reach Compliance Code | Frequency | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Efficiency | Output Voltage | Configuration | Operating Mode | Output Current | Case Connection | Quiescent Current | Transistor Application | Polarity/Channel Type | Operating temperature range | Operating Temperature Range | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Power | Feedback Cap-Max (Crss) | Saturation Current | Input Voltage | Module type | Module Type | Diameter | Height | Width |
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![]() | Mfr. Part #SIA923EDJ-T1-GE3Twicea Part #534-375-SIA923EDJ-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
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| 3000
In Stock
| Min.:1 Mult.:1 | 6 Weeks | YES | - | 6 | SILICON | 2 | for AC motors, heating elements, incandescent lamps | - | - | - | - | - | - | AC Motor Speed Controller (up to 4 kW) | 4.5 A | - | - | 36.60 | VISHAY INTERTECHNOLOGY INC | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SC-70, 6 PIN | SQUARE | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | 42*28*18.5/80 | - | - | e3 | - | EAR99 | - | - | Matte Tin (Sn) - annealed | - | - | DUAL | NO LEAD | - | - | 46 mm | compliant | - | - | - | - | S-PDSO-N6 | Not Qualified | - | 50…250 V | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | P-CHANNEL | - | - | - | 0.054 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 7.8 W | Load 2000 W | - | - | 110…250 V | - | AC Motor Speed Controller | - | - | 35 mm | |
| SIA923EDJ-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRF9540Twicea Part #534-375-IRF9540 | Vishay Intertechnologies |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Datasheet
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| 50000
In Stock
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | 1 | - | - | display - 2 lines of 16 characters (matrix 5 x 8 points), blue backlight | HD44780 | - | - | not more than 2; backlight - 45 mA | Character LCD display 1602 | 19 A | - | 31.95 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | No | does not support Cyrillic | - | - | 40*36*35/200 | - | - | - | e0 | No | EAR99 | - | - | TIN LEAD | - | - | SINGLE | THROUGH-HOLE | - | 4.5…5 V | 82 mm | unknown | - | - | - | - | R-PSFM-T3 | Not Qualified | - | - | SINGLE | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | P-CHANNEL | -20…+70 °C | - | TO-220AB | 0.2 Ω | 76 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 150 W | - | - | - | - | LCD-1602 display with blue backlight (without Cyrillic support) | - | - | 18 mm | 35 mm | |
| IRF9540 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRF540NLPBFTwicea Part #3717-375-IRF540NLPBF | International Rectifier |
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
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| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | DC-DC boost converter (10...32/ 12...35 V) | 33 A | - | 75.55 | - | INTERNATIONAL RECTIFIER CORP | - | - | input - 16/ output - 10 A | 175 °C | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Transferred | TO-262AA | from input polarity reversal | - | Yes | - | - | 48*32*22.5/104 | - | - | - | - | e3 | Yes | EAR99 | screw type | - | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | SINGLE | THROUGH-HOLE | 260 | - | 65 mm | not_compliant | conversion - 150 kHz | 30 | 3 | - | R-PSIP-T3 | Not Qualified | up to 94 % | 12…35 (adjustable or fixed) V | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | 10 A | DRAIN | 25 mA not more | SWITCHING | N-CHANNEL | - | -40 …+80 (T~45 °C at U=19 B/ I=3.42 A) °C | TO-262AA | 0.044 Ω | 110 A | 100 V | 185 mJ | METAL-OXIDE SEMICONDUCTOR | 130 W | 100 (150 with forced cooling) W | - | 1 | 10…32 V | - | DC-DC boost | - | 23 mm | 56.5 mm | ||
| IRF540NLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRFB7440PBFTwicea Part #3717-375-IRFB7440PBF | International Rectifier |
Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
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| 6672
In Stock
| Min.:1 Mult.:1 | - | NO | zinc-coated carbon steel | 3 | SILICON | 1 | - | maximum working load on axis - 50 kg | - | - | - | - | - | - | 120 A | - | 60.13 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | Yes | - | d - M6 mm | - | 25*21*19/200 | - | - | - | - | - | EAR99 | - | Eyebolt, DIN 580 series | - | - | - | SINGLE | THROUGH-HOLE | - | - | - | unknown | - | - | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.0025 Ω | 772 A | 40 V | 238 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | base - d1 - 17; k - 6 mm | b - 13; e - 6; h - 17 mm | - | |
| IRFB7440PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI4825DDY-T1-GE3Twicea Part #534-375-SI4825DDY-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 14.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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| 168000
In Stock
| Min.:1 Mult.:1 | - | YES | steel | 8 | SILICON | 1 | not for lifting | - | - | - | - | - | - | - | 14.9 A | - | - | 55.00 | VISHAY INTERTECHNOLOGY INC | fastening hole (D2) - 10 mm | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | M6 | - | 33*24*15/300 | - | - | 2.5 kN | e3 | - | EAR99 | - | Talrep hook-ring series DIN 1480 | MATTE TIN | - | - | DUAL | GULL WING | - | - | hook grip (D1) - 10 mm | compliant | - | - | - | - | R-PDSO-G8 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | P-CHANNEL | - | - | MS-012AA | 0.0125 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 5 W | - | - | 1 | - | - | - | - | - | - | |
| SI4825DDY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #FQP50N06Twicea Part #699-375-FQP50N06 | Rochester Electronics LLC |
50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Min.:1 Mult.:1 | - | NO | polyamide PA66, white | 3 | SILICON | 1 | - | thread (d) - M4; thread length (L) - 20 mm | - | - | - | - | - | - | 50 A | - | 0.36 | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | - | Yes | - | - | - | 42*28*18.5/20000 | - | - | - | e3 | Yes | - | - | Polyamide bolt series DIN 933 with full thread | MATTE TIN | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | - | unknown | - | NOT SPECIFIED | 3 | - | R-PSFM-T3 | COMMERCIAL | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.022 Ω | 200 A | 60 V | 490 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | NOT APPLICABLE | - | - | - | - | - | - | ||
| FQP50N06 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRF1018EPBFTwicea Part #3717-375-IRF1018EPBF | International Rectifier |
Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Min.:1 Mult.:1 | - | NO | polyamide PA66, white | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 79 A | thread (d) - M3; thread length (L) - 16 mm | 0.17 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | Yes | - | - | 32*32*18/10000 | - | - | - | - | e3 | Yes | EAR99 | - | DIN84 series polyamide screw | MATTE TIN OVER NICKEL | - | - | SINGLE | THROUGH-HOLE | - | - | - | compliant | - | - | 3 | - | R-PSFM-T3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.0084 Ω | 315 A | 60 V | 88 mJ | METAL-OXIDE SEMICONDUCTOR | 110 W | - | - | - | - | - | - | - | - | - | ||
| IRF1018EPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRFB7437PBFTwicea Part #3717-375-IRFB7437PBF | International Rectifier |
Description: Power Field-Effect Transistor, 195A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Min.:1 Mult.:1 | - | NO | polyamide PA66, white | 3 | SILICON | 1 | - | thread (d) - M4; thread length (L) - 16 mm | - | - | - | - | - | - | 195 A | - | - | 0.28 | INTERNATIONAL RECTIFIER CORP | - | - | - | 175 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | Yes | - | - | - | - | - | 48*32*27/20000 | - | - | - | EAR99 | - | DIN84 series polyamide screw | - | - | - | SINGLE | THROUGH-HOLE | - | - | - | unknown | - | - | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.002 Ω | 1000 A | 40 V | 350 mJ | METAL-OXIDE SEMICONDUCTOR | 230 W | - | - | - | - | - | - | - | - | - | ||
| IRFB7437PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRFB5615PBFTwicea Part #3717-375-IRFB5615PBF | International Rectifier |
Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
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| 5000
In Stock
| Min.:1 Mult.:1 | - | NO | polyamide PA66, white | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 35 A | - | - | 0.11 | INTERNATIONAL RECTIFIER CORP | - | - | - | 175 °C | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | Yes | - | M4 | - | - | - | 42*28*23.5/50000 | - | e3 | Yes | EAR99 | - | polyamide nut DIN 555 series | MATTE TIN OVER NICKEL | - | - | SINGLE | THROUGH-HOLE | 250 | - | - | compliant | - | 30 | 3 | - | R-PSFM-T3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | - | AMPLIFIER | N-CHANNEL | - | - | TO-220AB | 0.039 Ω | 140 A | 150 V | 109 mJ | METAL-OXIDE SEMICONDUCTOR | 144 W | - | - | - | - | - | - | - | - | - | |
| IRFB5615PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #C3M0030090KTwicea Part #18518-375-C3M0030090K | Wolfspeed |
Description: Power Field-Effect Transistor, 73A I(D), 900V, 0.039ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
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| 20000
In Stock
| Min.:1 Mult.:1 | - | NO | zinc-plated steel | 4 | SILICON CARBIDE | 1 | - | - | D - 6; k - 2.4 mm | - | - | - | - | - | 73 A | - | 1.45 | - | WOLFSPEED INC | - | - | - | 150 °C | -40 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | cross type Ph (Pz) | Yes | - | M3x25 mm | - | 29*21*18.5/10000 | - | - | - | - | - | EAR99 | - | Screw DIN 7985 series with pan head | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | - | compliant | - | NOT SPECIFIED | - | IEC-60747-8-4 | R-PSFM-T4 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-247 | 0.039 Ω | 200 A | 900 V | - | METAL-OXIDE SEMICONDUCTOR | 240 W | - | 5 pF | - | - | - | - | - | - | - | |
| C3M0030090K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI4056ADY-T1-GE3Twicea Part #534-375-SI4056ADY-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 8.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| 132471
In Stock
| Min.:1 Mult.:1 | 8 Weeks | YES | phospate steel (black) | 8 | SILICON | 1 | - | - | - | - | cross-type Pz2 (Ph) | - | - | - | 8.3 A | sharp tip | 2.00 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | 3.5x41; rare | - | 25*21*19/4000 | - | - | - | - | - | EAR99 | - | Screw drywall-wood with countersunk head | - | - | - | DUAL | GULL WING | - | - | - | unknown | - | - | - | - | R-PDSO-G8 | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.0292 Ω | - | 100 V | - | METAL-OXIDE SEMICONDUCTOR | 5 W | - | 7.2 pF | - | - | - | - | - | - | - | |
| SI4056ADY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PMV65XP,215Twicea Part #17568-375-PMV65XP,215 | NXP Semiconductors |
PMV65XP - 20 V, single P-channel Trench MOSFET TO-236 3-Pin
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| 1245
In Stock
| Min.:1 Mult.:1 | - | YES | galvanized steel (yellow) | 3 | SILICON | 1 | - | sharp tip | - | - | - | cross type Pz | - | - | 3.9 A | - | 0.66 | - | NXP SEMICONDUCTORS | - | SOT23 | - | 150 °C | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-236 | - | - | Yes | - | 3x16; frequent | 25*21*19/18000 | - | - | - | - | e3 | - | EAR99 | - | Universal screw with countersunk head | TIN | LOW THRESHOLD | 8541.29.00.75 | DUAL | GULL WING | 260 | - | - | compliant | - | 30 | 3 | - | R-PDSO-G3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | P-CHANNEL | - | - | TO-236AB | 0.076 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 1.92 W | - | - | 1 | - | - | - | - | - | - | |
| PMV65XP,215 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI1016CX-T1-GE3Twicea Part #534-375-SI1016CX-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN
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| 8500
In Stock
| Min.:1 Mult.:1 | 6 Weeks | YES | - | 6 | SILICON | 2 | - | - | - | - | - | - | - | - | 0.6 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | Matte Tin (Sn) | - | - | DUAL | FLAT | 260 | - | - | compliant | - | 30 | - | - | R-PDSO-F6 | - | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | - | - | 0.396 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.22 W | - | - | 1 | - | - | - | - | - | - | |
| SI1016CX-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI7216DN-T1-GE3Twicea Part #534-375-SI7216DN-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 6.5A I(D), 40V, 0.032ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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| 1000
In Stock
| Min.:1 Mult.:1 | - | YES | - | 6 | SILICON | 2 | - | - | - | - | - | - | - | - | 6.5 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | SQUARE | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | Matte Tin (Sn) | - | - | DUAL | C BEND | 260 | - | - | compliant | - | 30 | - | - | S-XDSO-C6 | Not Qualified | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | 0.032 Ω | 20 A | 40 V | 5 mJ | METAL-OXIDE SEMICONDUCTOR | 20.8 W | - | - | 1 | - | - | - | - | - | - | |
| SI7216DN-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SIS407DN-T1-GE3Twicea Part #534-375-SIS407DN-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 25A I(D), 20V, 0.0102ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
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| 64755
In Stock
| Min.:1 Mult.:1 | 16 Weeks | YES | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | 25 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | SQUARE | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | C BEND | 260 | - | - | compliant | - | 40 | - | - | S-XDSO-C5 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | P-CHANNEL | - | - | - | 0.0102 Ω | 40 A | 20 V | 20 mJ | METAL-OXIDE SEMICONDUCTOR | 33 W | - | - | - | - | - | - | - | - | - | |
| SIS407DN-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #2SK3018WTwicea Part #3717-375-2SK3018W | WEITRON INTERNATIONAL CO., LTD. |
Description: Transistor
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | WEITRON TECHNOLOGY CO LTD | - | - | - | - | - | - | - | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SK3018W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI2307BDS-T1-E3Twicea Part #534-375-SI2307BDS-T1-E3 | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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| 381899
In Stock
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 2.5 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | TO-236, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | MATTE TIN | - | - | DUAL | GULL WING | 260 | - | - | compliant | - | 30 | - | - | R-PDSO-G3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | - | P-CHANNEL | - | - | TO-236AB | 0.078 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | 75 pF | 1 | - | - | - | - | - | - | |
| SI2307BDS-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI1013CX-T1-GE3Twicea Part #534-375-SI1013CX-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 0.45A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 3 PIN
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| 270917
In Stock
| Min.:1 Mult.:1 | 16 Weeks | YES | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 0.45 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-89, 3 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | MATTE TIN | - | - | DUAL | FLAT | 260 | - | - | compliant | - | 30 | - | - | R-PDSO-F3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | P-CHANNEL | - | - | - | 0.76 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | 0.19 W | - | - | 1 | - | - | - | - | - | - | |
| SI1013CX-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #FDN336PTwicea Part #699-375-FDN336P | Rochester Electronics LLC |
1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3
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| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | 1.3 A | - | - | - | ROCHESTER ELECTRONICS LLC | - | SUPERSOT | - | - | - | PLASTIC/EPOXY | SUPERSOT-3 | RECTANGULAR | SMALL OUTLINE | Active | SOT | - | - | Yes | - | - | - | - | - | - | - | e3 | Yes | - | - | - | MATTE TIN | - | - | DUAL | GULL WING | 260 | - | - | unknown | - | 30 | 3 | - | R-PDSO-G3 | COMMERCIAL | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | SWITCHING | P-CHANNEL | - | - | - | 0.2 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 1 | - | - | - | - | - | - | ||
| FDN336P | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BUK9Y19-100ETwicea Part #554-375-BUK9Y19-100E | Nexperia |
Description: Power Field-Effect Transistor
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| 30000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | NEXPERIA | - | - | - | - | - | - | - | - | - | Active | - | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | - | TIN | - | - | - | - | 260 | - | - | not_compliant | - | 30 | - | AEC-Q101; IEC-60134 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | |
| BUK9Y19-100E |
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