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SQJ407EP-T1_GE3 Tech Specifications
Vishay SQJ407EP-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 20 Weeks | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SO-8L, 4 PIN | |
| Drain Current-Max (ID) | 60 A | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PSSO-G4 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.0044 Ω | |
| Pulsed Drain Current-Max (IDM) | 155 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 84 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
SQJ407EP-T1_GE3 Documents
Download datasheets and manufacturer documentation for SQJ407EP-T1_GE3
- Datasheetscbe4d05e4711a9e0da242919f970470e.pdf
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