In Stock
:
270917 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
SI1013CX-T1-GE3 Tech Specifications
Vishay SI1013CX-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 16 Weeks | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, SC-89, 3 PIN | |
| Drain Current-Max (ID) | 0.45 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-F3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.76 Ω | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.19 W | |
| Saturation Current | 1 |
SI1013CX-T1-GE3 Documents
Download datasheets and manufacturer documentation for SI1013CX-T1-GE3
- Datasheets88af7bed2723ca1597d3b7b5c717e3fa.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



