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SIS407DN-T1-GE3 Tech Specifications

Vishay  SIS407DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 16 Weeks
Surface Mount YES
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Drain Current-Max (ID) 25 A
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
ECCN Code EAR99
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code S-XDSO-C5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain-source On Resistance-Max 0.0102 Ω
Pulsed Drain Current-Max (IDM) 40 A
DS Breakdown Voltage-Min 20 V
Avalanche Energy Rating (Eas) 20 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 33 W
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SIS407DN-T1-GE3 Documents

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