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IRF540NLPBF Tech Specifications
International Rectifier IRF540NLPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-262AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Drain Current-Max (ID) | 33 A | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Description | DC-DC boost converter (10...32/ 12...35 V) | |
| Protection | from input polarity reversal | |
| Maximum Current | input - 16/ output - 10 A | |
| Gross weight | 75.55 | |
| Transport package size/quantity | 48*32*22.5/104 | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Connector Type | screw type | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Depth | 65 mm | |
| Reach Compliance Code | not_compliant | |
| Frequency | conversion - 150 kHz | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Efficiency | up to 94 % | |
| Output Voltage | 12…35 (adjustable or fixed) V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Output Current | 10 A | |
| Case Connection | DRAIN | |
| Quiescent Current | 25 mA not more | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating Temperature Range | -40 …+80 (T~45 °C at U=19 B/ I=3.42 A) °C | |
| JEDEC-95 Code | TO-262AA | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| DS Breakdown Voltage-Min | 100 V | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 130 W | |
| Power | 100 (150 with forced cooling) W | |
| Saturation Current | 1 | |
| Input Voltage | 10…32 V | |
| Module Type | DC-DC boost | |
| Height | 23 mm | |
| Width | 56.5 mm |
IRF540NLPBF Documents
Download datasheets and manufacturer documentation for IRF540NLPBF
- Datasheets32c59ca6277f27c22fa810795cb292be.pdf
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