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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Surface Mount | Material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Case | Data transfer rate | Date Of Intro | Drain Current-Max (ID) | Enclosure coating | Gross weight | Ihs Manufacturer | Inner diameter | Insulation voltage | Kind of channel | Kind of integrated circuit | Moisture Sensitivity Levels | Mounting | Nominal pass-through diameter | Nominal voltage | Number of Elements | Number of wires | Operating ambient temperature | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protection level | Rohs Code | Transport packaging size/quantity | Type of integrated circuit | Wire length | Operating temperature | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Connector type | Type | Terminal Finish | Color | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Number of contacts | Configuration | Note | Number of channels | Operating Mode | Case Connection | Transistor Application | Number of inputs | Polarity/Channel Type | Operating temperature range | Temperature range | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Highest Frequency Band | Outer diameter | Power Dissipation Ambient-Max | Saturation Current |
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  | Mfr. Part #IRF7316TRPBFTwicea Part #3717-375-IRF7316TRPBF | International Rectifier |
Description: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Datasheet
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| 10000
In Stock
| Min.:1 Mult.:1 | - | YES | Steel | 8 | SILICON | 2 | - | - | - | 4.9 A | PVC | 4297.00 | INTERNATIONAL RECTIFIER CORP | d = 16.9 | - | - | - | - | - | 18 mm | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | IP65 | Yes | 42*42*30/2 | - | - | - | 50m | e3 | Yes | EAR99 | - | Metal Conduit | MATTE TIN | Black | AVALANCHE RATED | 8541.29.00.95 | DUAL | GULL WING | 260 | compliant | 30 | 8 | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | SWITCHING | - | P-CHANNEL | -40...+90 °C | -40...+90 °C | - | MS-012AA | 0.058 Ω | 30 A | 30 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | - | - | (D) - 20.6mm | 2 W | 1 | |
| IRF7316TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #PSMN6R5-80PSTwicea Part #17568-375-PSMN6R5-80PS | NXP Semiconductors |
100A, 80V, 0.0069ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN
Datasheet
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| 3000
In Stock
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | 1 | - | - | - | 100 A | - | 30.70 | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | 40 | - | 175 °C | - | PLASTIC/EPOXY | PLASTIC, SC-46, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | Yes | 48*32*27/500 | - | 200 mm | - | - | e3 | - | EAR99 | - | female-female | Tin (Sn) | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | TO-220AB | 0.0069 Ω | 470 A | 80 V | 700 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | 1 | |
| PSMN6R5-80PS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PMGD280UNTwicea Part #554-375-PMGD280UN | Nexperia |
Small Signal Field-Effect Transistor
Datasheet
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| 144000
In Stock
| Min.:1 Mult.:1 | - | YES | - | 6 | SILICON | 2 | SOP16 | 150Mbps | 2017-02-01 | 0.87 A | - | 1 g | NEXPERIA | - | 3.75kV | unidirectional | digital isolator | - | SMD | - | - | - | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | Yes | - | interface | - | -40...125°C | - | e3 | - | EAR99 | - | - | TIN | - | - | - | DUAL | GULL WING | 260 | compliant | 30 | - | R-PDSO-G6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | 4 | ENHANCEMENT MODE | - | SWITCHING | 4/0 | N-CHANNEL | - | - | - | - | 0.34 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | 1 | |
| PMGD280UN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRL640PBFTwicea Part #534-375-IRL640PBF | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Datasheet
Compare
| 2000
In Stock
| Min.:1 Mult.:1 | 12 Weeks | NO | - | 3 | SILICON | 1 | - | - | - | 17 A | - | 50.00 | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | 250 V | - | - | -25…+70 °C | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | Yes | 32*32*18/100 | - | - | - | - | e3 | Yes | EAR99 | C13-C20 | 3-pole plug-socket adapter | MATTE TIN | black | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | - | SINGLE | THROUGH-HOLE | - | compliant | - | 3 | R-PSFM-T3 | Not Qualified | 3 | SINGLE WITH BUILT-IN DIODE | IEC-60320 (C13-C20) | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | 16 A | TO-220AB | 0.18 Ω | 68 A | 200 V | 580 mJ | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | - | - | - | - | - | |
| IRL640PBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF250Twicea Part #15972-375-IRF250 | New Jersey Semiconductor Products Inc |
Trans MOSFET N-CH 200V 30A 3-Pin(2 Tab) TO-3
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | SILICON | 1 | - | - | - | 30 A | - | - | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | - | - | - | 200 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| IRF250 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PSMN040-100MSETwicea Part #637-375-PSMN040-100MSE | NXP Semiconductors |
POWER, FET
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | Transferred | - | - | Yes | - | - | - | - | - | e3 | - | EAR99 | - | - | Tin (Sn) | - | - | - | - | - | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PSMN040-100MSE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #PMBFJ108Twicea Part #637-375-PMBFJ108 | NXP Semiconductors |
TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal
Datasheet
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| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | 1 | - | - | - | 1 | - | - | 150 °C | - | PLASTIC/EPOXY | TO-236AB, SOT-23, 3 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT-23 | - | Yes | - | - | - | - | - | e3 | Yes | EAR99 | - | - | TIN | - | - | 8541.21.00.95 | DUAL | GULL WING | 260 | compliant | 30 | 3 | R-PDSO-G3 | Not Qualified | - | SINGLE | - | - | DEPLETION MODE | - | SWITCHING | - | N-CHANNEL | - | - | - | TO-236AB | 8 Ω | - | - | - | JUNCTION | 0.25 W | - | - | 15 pF | - | - | - | - | ||
| PMBFJ108 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BLF246Twicea Part #799-375-BLF246 | New Jersey Semiconductor Products Inc |
Trans RF MOSFET N-CH 65V 13A 4-Pin CRFM
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | SILICON | - | - | - | - | 13 A | - | - | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | VERY HIGH FREQUENCY BAND | - | - | - | ||
| BLF246 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #VN2222LLTwicea Part #4750-375-VN2222LL | Telcom Semiconductor Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
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| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | - | 0.099 A | - | - | TELCOM SEMICONDUCTOR INC | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | - | - | - | - | - | Obsolete | - | - | No | - | - | - | - | - | e0 | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.4 W | - | - | - | - | - | - | - | ||
| VN2222LL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #A2T09D400-23NR6Twicea Part #637-375-A2T09D400-23NR6 | NXP Semiconductors |
RF POWER, FET
Datasheet
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| Min.:1 Mult.:1 | 10 Weeks | - | - | - | - | - | - | - | 2016-03-12 | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | 3 | - | - | - | - | - | - | - | - | - | - | - | - | Not Recommended | - | - | Yes | - | - | - | - | - | e3 | - | EAR99 | - | - | Tin (Sn) | - | - | 8541.29.00 | - | - | 260 | compliant | 40 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| A2T09D400-23NR6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #VN0300LTwicea Part #13137-375-VN0300L | Supertex Inc |
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | 0.64 A | - | - | SUPERTEX INC | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | - | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-T3 | ROUND | CYLINDRICAL | Obsolete | TO-92 | - | No | - | - | - | - | - | e0 | - | EAR99 | - | - | TIN LEAD | - | HIGH INPUT IMPEDANCE | - | BOTTOM | THROUGH-HOLE | - | compliant | - | 3 | O-PBCY-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | SWITCHING | - | N-CHANNEL | - | - | - | TO-92 | 1.2 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | - | - | 50 pF | - | - | - | - | ||
| VN0300L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SJ355-T1Twicea Part #391-375-2SJ355-T1 | Renesas Electronics Corporation |
2SJ355-T1
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 2SJ355-T1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFZ48Twicea Part #3717-375-IRFZ48 | International Rectifier |
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Datasheet
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| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | 50 A | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | 1 | - | - | 175 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | No | - | - | - | - | - | e0 | - | EAR99 | - | - | TIN LEAD | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | compliant | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE | - | - | ENHANCEMENT MODE | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | TO-220AB | 0.018 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 190 W | - | - | - | - | - | 190 W | - | ||
| IRFZ48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BLF6G22-45Twicea Part #637-375-BLF6G22-45 | NXP Semiconductors |
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3
Datasheet
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| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | - | - | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | 1 | - | - | 225 °C | - | CERAMIC, METAL-SEALED COFIRED | ROHS COMPLIANT, CERAMIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | Yes | - | - | - | - | - | - | Yes | EAR99 | - | - | - | - | - | - | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | 3 | R-CDFM-F2 | Not Qualified | - | SINGLE | - | - | ENHANCEMENT MODE | SOURCE | AMPLIFIER | - | N-CHANNEL | - | - | - | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | S BAND | - | - | - | ||
| BLF6G22-45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BCW31Twicea Part #318-375-BCW31 | Freescale Semiconductor |
Description: TRANSISTOR,BJT,NPN,20V V(BR)CEO,100MA I(C),TO-236AA
Datasheet
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| Min.:1 Mult.:1 | - | YES | - | - | - | - | - | - | - | - | - | - | MOTOROLA SEMICONDUCTOR PRODUCTS | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | - | - | , | - | - | Obsolete | - | - | No | - | - | - | - | - | e0 | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | - | 0.3 W | 0.1 A | 110 | - | - | - | - | - | ||
| BCW31 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BS250Twicea Part #16059-375-BS250 | Philips Semiconductors |
Description: Transistor,
Datasheet
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| 45
In Stock
| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | - | 0.25 A | - | - | PHILIPS SEMICONDUCTORS | - | - | - | - | - | - | - | - | 1 | - | - | 150 °C | - | - | - | - | - | Transferred | - | - | No | - | - | - | - | - | e0 | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | P-CHANNEL | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.83 W | - | - | - | - | - | - | - | |
| BS250 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PMV48XPTwicea Part #637-375-PMV48XP | NXP Semiconductors |
Description: 3500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3
Datasheet
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| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | 3.5 A | - | - | NXP SEMICONDUCTORS | - | - | - | - | 1 | - | - | - | 1 | - | - | - | - | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | - | Yes | - | - | - | - | - | e3 | - | EAR99 | - | - | TIN | - | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | - | unknown | - | 3 | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | SWITCHING | - | P-CHANNEL | - | - | - | TO-236AB | 0.055 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| PMV48XP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PSMN2R4-30YLDTwicea Part #637-375-PSMN2R4-30YLD | NXP Semiconductors |
TRANSISTOR POWER, FET, FET General Purpose Power
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PSMN2R4-30YLD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2N7002CKTwicea Part #637-375-2N7002CK | NXP Semiconductors |
TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal
Datasheet
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| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | 0.3 A | - | - | NXP SEMICONDUCTORS | - | - | - | - | 1 | - | - | - | 1 | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | PLASTIC PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | - | Yes | - | - | - | - | - | e3 | Yes | EAR99 | - | - | Tin (Sn) | - | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | 260 | compliant | 30 | 3 | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | SWITCHING | - | N-CHANNEL | - | - | - | TO-236AB | 1.6 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 0.35 W | - | - | 7.5 pF | - | - | - | - | ||
| 2N7002CK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BLF8G27LS-100GVTwicea Part #637-375-BLF8G27LS-100GV | NXP Semiconductors |
RF Power Field-Effect Transistor
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Transferred | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BLF8G27LS-100GV |
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