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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Date Of Intro | Drain Current-Max (ID) | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Type of connector | Operating temperature | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Profile | Saturation Current | Plating thickness | Flammability rating |
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  | Mfr. Part #SSM3K05FUTwicea Part #4669-375-SSM3K05FU | Toshiba America Electronic Components |
Description: TRANSISTOR 400 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2E1E, USM, SC-70, 3 PIN, FET General Purpose Small Signal
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| 600
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 36 | 3 | SILICON | 1 | socket | 2x18 | 2.54mm | - | 0.4 A | THT | 2.97 g | TOSHIBA CORP | female | - | - | PLASTIC/EPOXY | 2-2E1E, USM, SC-70, 3 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | SC-70 | - | 2.54mm | straight | pin strips | -40...163°C | - | - | - | LOW THRESHOLD | DUAL | GULL WING | - | unknown | 1.5A | - | 3 | - | R-PDSO-G3 | Not Qualified | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 1.2 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| SSM3K05FU | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IAUC24N10S5L300Twicea Part #376-375-IAUC24N10S5L300 | Infineon Technologies AG |
Power Field-Effect Transistor,
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| 757
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | 62 | - | - | - | socket | 2x31 | 2.54mm | - | - | THT | 5.12 g | INFINEON TECHNOLOGIES AG | female | - | - | - | , | - | - | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | e3 | EAR99 | Tin (Sn) | - | - | - | NOT SPECIFIED | compliant | 1.5A | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | |
| IAUC24N10S5L300 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK31E60WTwicea Part #4669-375-TK31E60W | Toshiba America Electronic Components |
Nch 500V<VDSS≤700V
Datasheet
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| 96
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 12 | 3 | SILICON | 1 | socket | 2x6 | 2.54mm | - | 30.8 A | SMT | 0.65 g | TOSHIBA CORP | female | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | 3A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.088 Ω | 123 A | 600 V | 437 mJ | METAL-OXIDE SEMICONDUCTOR | 230 W | 150V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TK31E60W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK25E60XTwicea Part #4669-375-TK25E60X | Toshiba America Electronic Components |
Description: Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V
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| 62
In Stock
| Min.:1 Mult.:1 | 20 Weeks | gold-plated | NO | 96 | 3 | SILICON | 1 | socket | 2x48 | 2.54mm | - | 25 A | THT | 5.19 g | TOSHIBA CORP | female | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | 3A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-220AB | 0.125 Ω | 100 A | 600 V | 306 mJ | METAL-OXIDE SEMICONDUCTOR | - | 150V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TK25E60X | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUK7Y1R7-40HTwicea Part #554-375-BUK7Y1R7-40H | Nexperia |
Description: Power Field-Effect Transistor
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| 32474
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 22 | 4 | SILICON | 1 | socket | 2x11 | 2.54mm | - | 120 A | THT | 1.2 g | NEXPERIA | female | 175 °C | -55 °C | PLASTIC/EPOXY | SOT-669, SO-8, 4 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | e3 | EAR99 | TIN | - | SINGLE | GULL WING | 260 | not_compliant | 3A | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | MO-235 | 0.0017 Ω | 600 A | 40 V | 158 mJ | METAL-OXIDE SEMICONDUCTOR | 294 W | 150V | 393 pF | - | beryllium copper | 1 | 0.75µm | UL94V-0 | |
| BUK7Y1R7-40H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PSMN1R0-40YLDTwicea Part #554-375-PSMN1R0-40YLD | Nexperia |
Power Field-Effect Transistor
Datasheet
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| 1500
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 8 | 4 | SILICON | 1 | socket | 2x4 | 2.54mm | 2017-02-01 | 100 A | SMT | 0.38 g | NEXPERIA | female | - | - | PLASTIC/EPOXY | SOP-8, 4 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | e3 | EAR99 | TIN | HIGH RELIABILITY | SINGLE | GULL WING | 260 | not_compliant | 1.5A | 30 | - | IEC-60134 | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0014 Ω | 1284 A | 40 V | 578 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.254µm | UL94V-0 | |
| PSMN1R0-40YLD | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPW65R029CFD7Twicea Part #376-375-IPW65R029CFD7 | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
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| 576
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 30 | 3 | SILICON | 1 | socket | 2x15 | 2.54mm | 2020-06-19 | 69 A | SMT | 0.48 g | INFINEON TECHNOLOGIES AG | female | 150 °C | -55 °C | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | e3 | EAR99 | TIN | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-247 | 0.029 Ω | 304 A | 650 V | 358 mJ | METAL-OXIDE SEMICONDUCTOR | 305 W | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| IPW65R029CFD7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK11S10N1LTwicea Part #4669-375-TK11S10N1L | Toshiba America Electronic Components |
POWER, FET
Datasheet
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| 35000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 84 | 2 | SILICON | 1 | socket | 2x42 | 2.54mm | - | 11 A | THT | 5.04 g | TOSHIBA CORP | female | 175 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | EAR99 | - | - | SINGLE | GULL WING | - | unknown | 1.5A | - | - | AEC-Q101 | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.05 Ω | 33 A | 100 V | 33.8 mJ | METAL-OXIDE SEMICONDUCTOR | 65 W | 60V | 67 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TK11S10N1L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPH3R506PLTwicea Part #4669-375-TPH3R506PL | Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
Datasheet
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| 7897
In Stock
| Min.:1 Mult.:1 | 16 Weeks | gold-plated | YES | 74 | 8 | SILICON | 1 | socket | 2x37 | 2.54mm | - | 94 A | THT | 4.44 g | TOSHIBA CORP | female | 175 °C | - | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | EAR99 | - | - | DUAL | FLAT | - | unknown | 1.5A | - | - | - | S-PDSO-F8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0035 Ω | 200 A | 60 V | 48 mJ | METAL-OXIDE SEMICONDUCTOR | 116 W | 60V | 95 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TPH3R506PL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK7A60W5Twicea Part #4669-375-TK7A60W5 | Toshiba America Electronic Components |
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V
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| 30000
In Stock
| Min.:1 Mult.:1 | 32 Weeks | gold-plated | NO | 66 | 3 | SILICON | 1 | socket | 2x33 | 2.54mm | - | 7 A | THT | 3.96 g | TOSHIBA CORP | female | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.65 Ω | 28 A | 600 V | 92 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TK7A60W5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PMPB13XNETwicea Part #17568-375-PMPB13XNE | NXP Semiconductors |
8A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN
Datasheet
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| 1160
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 38 | 6 | SILICON | 1 | socket | 2x19 | 2.54mm | - | 8 A | THT | 2.28 g | NXP SEMICONDUCTORS | female | - | - | PLASTIC/EPOXY | 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Transferred | - | Yes | 2.54mm | straight | pin strips | -40...163°C | e3 | EAR99 | TIN | - | DUAL | NO LEAD | - | unknown | 1.5A | - | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.016 Ω | 32 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | |
| PMPB13XNE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPD80R450P7Twicea Part #376-375-IPD80R450P7 | Infineon Technologies AG |
Power Field-Effect Transistor,
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| 10000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | 23 | - | - | - | socket | 1x23 | 2.54mm | - | - | THT | 1.15 g | INFINEON TECHNOLOGIES AG | female | - | - | - | , | - | - | Active | - | Yes | - | straight | pin strips | -40...163°C | e3 | EAR99 | Tin (Sn) | - | - | - | NOT SPECIFIED | compliant | 3A | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | |
| IPD80R450P7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUK7Y12-100ETwicea Part #554-375-BUK7Y12-100E | Nexperia |
Power Field-Effect Transistor, 85A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
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| Min.:1 Mult.:1 | - | gold-plated | YES | 20 | 4 | SILICON | 1 | socket | 2x10 | 2.54mm | - | 85 A | THT | 1.07 g | NEXPERIA | female | - | - | PLASTIC/EPOXY | SO8, LFPAK56-4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | e3 | EAR99 | TIN | AVALANCHE RATED | SINGLE | GULL WING | 260 | not_compliant | 1.5A | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | MO-235 | 0.012 Ω | 339 A | 100 V | 139 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.254µm | UL94V-0 | ||
| BUK7Y12-100E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK750A60FTwicea Part #4669-375-TK750A60F | Toshiba America Electronic Components |
Description: Power Field-Effect Transistor
Datasheet
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| 50000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 12 | 3 | SILICON | 1 | socket | 2x6 | 2.54mm | - | 10 A | THT | 0.64 g | TOSHIBA CORP | female | 150 °C | - | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 1.5A | NOT SPECIFIED | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.75 Ω | 40 A | 600 V | 201 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | 60V | 8.5 pF | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| TK750A60F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BLP0427M9S20GTwicea Part #38-375-BLP0427M9S20G | Ampleon |
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET,
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| 170
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 40 | 2 | SILICON | 1 | socket | 1x40 | 2.54mm | - | - | THT | 2.32 g | AMPLEON NETHERLANDS B V | female | 225 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G2 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | - | straight | pin strips | -40...163°C | - | EAR99 | - | - | DUAL | GULL WING | - | unknown | 1.5A | - | - | IEC-60134 | R-PDSO-G2 | - | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | S BAND | beryllium copper | - | 0.75µm | UL94V-0 | |
| BLP0427M9S20G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUK7K35-60ETwicea Part #554-375-BUK7K35-60E | Nexperia |
Description: Power Field-Effect Transistor, 20.7A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| 29500
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 49 | 4 | SILICON | 2 | socket | 1x49 | 2.54mm | - | 20.7 A | THT | 2.84 g | NEXPERIA | female | - | - | PLASTIC/EPOXY | LFPAK56D-4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | e3 | EAR99 | TIN | AVALANCHE RATED | SINGLE | GULL WING | 260 | not_compliant | 1.5A | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.03 Ω | 95 A | 60 V | 20.3 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | |
| BUK7K35-60E | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #18NM70G-TN3-RTwicea Part #15973-375-18NM70G-TN3-R | Unisonic Technologies Co Ltd |
Description: Power Field-Effect Transistor,
Datasheet
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| 3013
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 40 | 2 | SILICON | 1 | socket | 1x40 | 2.54mm | - | 18 A | THT | 2.32 g | UNISONIC TECHNOLOGIES CO LTD | female | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | - | EAR99 | - | - | SINGLE | GULL WING | NOT SPECIFIED | compliant | 1.5A | NOT SPECIFIED | - | - | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-252 | 0.35 Ω | 45 A | 700 V | 204.8 mJ | METAL-OXIDE SEMICONDUCTOR | 83 W | 60V | 71 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| 18NM70G-TN3-R | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PMPB20XPETwicea Part #554-375-PMPB20XPE | Nexperia |
Power Field-Effect Transistor, 7.2A I(D), 20V, 0.0235ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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| 12000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 21 | 6 | SILICON | 1 | socket | 1x21 | 2.54mm | - | 7.2 A | THT | 1.22 g | NEXPERIA | female | - | - | PLASTIC/EPOXY | DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | e3 | EAR99 | TIN | - | DUAL | NO LEAD | 260 | compliant | 1.5A | 30 | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0235 Ω | 30 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | |
| PMPB20XPE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPN4R806PLTwicea Part #4669-375-TPN4R806PL | Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
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| Min.:1 Mult.:1 | 16 Weeks | gold-plated | YES | 1 | 8 | SILICON | 1 | socket | 1x1 | 2.54mm | - | 105 A | THT | 0.1 g | TOSHIBA CORP | female | 175 °C | - | PLASTIC/EPOXY | - | SQUARE | SMALL OUTLINE | Active | - | - | - | straight | pin strips | -40...163°C | - | EAR99 | - | - | DUAL | FLAT | - | unknown | 1.5A | - | - | - | S-PDSO-F8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0048 Ω | 200 A | 60 V | 28 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | 60V | 90 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| TPN4R806PL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TK12A60UTwicea Part #4669-375-TK12A60U | Toshiba America Electronic Components |
TRANSISTOR 12 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
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| 1950
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 45 | 3 | SILICON | 1 | socket | 1x45 | 2.54mm | - | 12 A | THT | 3.87 g | TOSHIBA CORP | female | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | End Of Life | SC-67 | - | - | straight | pin strips | -40...163°C | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.4 Ω | 24 A | 600 V | 69 mJ | METAL-OXIDE SEMICONDUCTOR | 35 W | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TK12A60U |
Index :
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