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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Power Dissipation Ambient-Max |
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![]() | Mfr. Part #IRF7805APBFTwicea Part #3717-375-IRF7805APBF | International Rectifier |
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Datasheet
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| Min.:1 Mult.:1 | YES | 8 | SILICON | 13 A | INTERNATIONAL RECTIFIER CORP | 1 | 1 | 150 °C | PLASTIC/EPOXY | LEAD FREE, SO-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | - | - | - | e3 | Yes | EAR99 | MATTE TIN | - | - | DUAL | GULL WING | 260 | compliant | 30 | 8 | - | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | MS-012AA | 0.011 Ω | 100 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | - | ||
| IRF7805APBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRLS4030Twicea Part #3717-375-IRLS4030 | International Rectifier |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRLS4030 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRFR3504ZTwicea Part #376-375-IRFR3504Z | Infineon Technologies AG |
Description: Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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| Min.:1 Mult.:1 | YES | 2 | SILICON | 42 A | INFINEON TECHNOLOGIES AG | 1 | 1 | 175 °C | PLASTIC/EPOXY | DPAK-3 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | NOT SPECIFIED | - | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-252AA | 0.009 Ω | 310 A | 40 V | 77 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| IRFR3504Z | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #2N5109Twicea Part #653-375-2N5109 | General Transistor Corp |
Description: Transistor
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| Min.:1 Mult.:1 | NO | - | - | - | GENERAL TRANSISTOR CORP | - | 1 | - | - | - | - | - | Contact Manufacturer | - | - | 1200 MHz | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 2.5 W | 0.5 A | 40 | - | - | ||
| 2N5109 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BF964Twicea Part #4557-375-BF964 | Siemens |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | 0.03 A | SIEMENS A G | - | 1 | 150 °C | - | - | - | - | Transferred | - | No | - | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.225 W | - | - | - | - | ||
| BF964 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRF7413TRTwicea Part #850-375-IRF7413TR | TT Electronics Resistors |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF7413TR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #JANTX2N6790Twicea Part #17706-375-JANTX2N6790 | Semicoa Semiconductors |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 3.5 A | SEMICOA CORP | - | 1 | - | METAL | HERMETIC SEALED, TO-39, 3 PIN | ROUND | CYLINDRICAL | Contact Manufacturer | - | No | - | - | - | - | - | EAR99 | - | - | - | BOTTOM | WIRE | NOT SPECIFIED | unknown | NOT SPECIFIED | - | MIL-19500 | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | AMPLIFIER | N-CHANNEL | TO-205AF | 0.85 Ω | 14 A | 200 V | 0.242 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| JANTX2N6790 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #JANTX2N7225Twicea Part #3644-375-JANTX2N7225 | Harris Semiconductor |
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 27.4 A | HARRIS SEMICONDUCTOR | - | 1 | - | PLASTIC/EPOXY | - | SQUARE | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | NOT SPECIFIED | RADIATION HARDENED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | - | MILITARY STANDARD (USA) | S-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | TO-254AA | 0.1 Ω | - | 200 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | 150 W | ||
| JANTX2N7225 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #JANTX2N6790Twicea Part #295-375-JANTX2N6790 | Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 3.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 3.5 A | FAIRCHILD SEMICONDUCTOR CORP | - | 1 | 150 °C | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | No | - | - | - | e0 | - | EAR99 | TIN LEAD | RADIATION HARDENED | - | BOTTOM | WIRE | - | compliant | - | - | - | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-205AF | 0.8 Ω | 14 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 20 W | - | - | - | - | ||
| JANTX2N6790 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BC177Twicea Part #16431-375-BC177 | Comset Semiconductor |
Transistor
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| Min.:1 Mult.:1 | - | - | - | - | COMSET SEMICONDUCTORS | - | - | - | - | - | - | - | Contact Manufacturer | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BC177 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BC177Twicea Part #16059-375-BC177 | North American Philips Discrete Products Div |
Transistor,
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| 15270
In Stock
| Min.:1 Mult.:1 | NO | - | - | - | NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV | - | 1 | 175 °C | - | - | - | - | Transferred | - | No | 190 MHz | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 0.6 W | 0.2 A | 120 | - | - | |
| BC177 16059-375-BC177 North American Philips Discrete Products Div
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![]() | Mfr. Part #BC177Twicea Part #815-375-BC177 | Texas Instruments |
BC177
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| Min.:1 Mult.:1 | NO | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 175 °C | - | , | - | - | Obsolete | - | No | 190 MHz | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 0.6 W | 0.2 A | 120 | - | - | ||
| BC177 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BC177Twicea Part #4094-375-BC177 | National Semiconductor Corporation |
TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),TO-206AA
Datasheet
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| Min.:1 Mult.:1 | NO | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | 1 | 175 °C | - | - | - | - | Obsolete | - | No | 190 MHz | - | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | compliant | - | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 0.6 W | 0.2 A | 120 | - | - | ||
| BC177 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IPL60R085P7 E8235Twicea Part #376-375-IPL60R085P7 E8235 | Infineon Technologies AG |
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| 3000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| IPL60R085P7 E8235 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IPP120P04P4L03AKSATwicea Part #376-375-IPP120P04P4L03AKSA | Infineon Technologies AG |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IPP120P04P4L03AKSA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #AP6679GM-HFTwicea Part #2957-375-AP6679GM-HF | Advanced Power Electronics Corp |
TRANSISTOR 14 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power
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| 58763
In Stock
| Min.:1 Mult.:1 | YES | 8 | SILICON | 14 A | ADVANCED POWER ELECTRONICS CORP | - | 1 | 150 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | SOT | - | - | - | - | - | - | EAR99 | - | - | - | DUAL | GULL WING | - | compliant | - | 8 | - | R-PDSO-G8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 0.009 Ω | 50 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | |
| AP6679GM-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #TSM120N06LCPTwicea Part #799-375-TSM120N06LCP | Taiwan Semiconductor |
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| 225
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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![]() | Mfr. Part #FDP10N60NZTwicea Part #699-375-FDP10N60NZ | Rochester Electronics LLC |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
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![]() | Mfr. Part #FQPF10N60CTwicea Part #699-375-FQPF10N60C | Rochester Electronics LLC |
Description: 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 9.5 A | ROCHESTER ELECTRONICS LLC | NOT APPLICABLE | 1 | - | PLASTIC/EPOXY | LEAD FREE, TO-220F, 3 PIN | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | Yes | - | - | - | e3 | Yes | - | MATTE TIN | FAST SWITCHING | - | SINGLE | THROUGH-HOLE | NOT APPLICABLE | unknown | NOT APPLICABLE | 3 | - | R-PSFM-T3 | COMMERCIAL | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.73 Ω | 38 A | 600 V | 700 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | ||
| FQPF10N60C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #JANTX2N6798Twicea Part #3644-375-JANTX2N6798 | Harris Semiconductor |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 5.5 A | HARRIS SEMICONDUCTOR | - | 1 | 150 °C | METAL | - | ROUND | CYLINDRICAL | Obsolete | - | - | - | 90 ns | 80 ns | - | - | EAR99 | NOT SPECIFIED | RADIATION HARDENED | 8541.29.00.95 | BOTTOM | WIRE | - | unknown | - | - | MILITARY STANDARD (USA) | O-MBCY-W3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-205AF | 0.4 Ω | 22 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | 150 pF | 25 W | ||
| JANTX2N6798 |
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