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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Date Of Intro | Drain Current-Max (ID) | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Type of connector | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Profile | Saturation Current | Plating thickness | Flammability rating |
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  | Mfr. Part #RD35HUF2Twicea Part #539-375-RD35HUF2 | Mitsubishi Electric |
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8
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| 500
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 9 | 8 | SILICON | 2 | socket | 1x9 | 2.54mm | - | 10 A | THT | 0.34 g | MITSUBISHI ELECTRIC CORP | female | - | - | CERAMIC, METAL-SEALED COFIRED | ROHS COMPLIANT PACKAGE-8 | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | DUAL | FLAT | - | unknown | 1.5A | - | 8 | - | R-CDFM-F8 | - | COMMON SOURCE, 2 ELEMENTS | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 40 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | ULTRA HIGH FREQUENCY BAND | beryllium copper | - | 0.254µm | UL94V-0 | |
| RD35HUF2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RD70HVF1C-501Twicea Part #539-375-RD70HVF1C-501 | Mitsubishi Electric |
RF Power Field-Effect Transistor,
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| Min.:1 Mult.:1 | - | gold-plated | - | 45 | - | - | - | socket | 1x45 | 2.54mm | 2019-06-19 | - | THT | 1.71 g | MITSUBISHI ELECTRIC CORP | female | - | - | - | , | - | - | Active | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | - | unknown | 1.5A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | ||
| RD70HVF1C-501 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SH8M14TBTwicea Part #687-375-SH8M14TB | ROHM Semiconductor |
Description: Power Field-Effect Transistor, 9A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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| Min.:1 Mult.:1 | - | gold-plated | YES | 27 | 8 | SILICON | 2 | socket | 1x27 | 2.54mm | - | 9 A | THT | 1.03 g | ROHM CO LTD | female | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Active | SOT | Yes | - | straight | pin strips | -40...163°C | - | Yes | EAR99 | - | DUAL | GULL WING | 260 | compliant | 1.5A | 10 | 8 | - | R-PDSO-G8 | Not Qualified | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | 0.028 Ω | 36 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 2 W | 60V | - | - | beryllium copper | 1 | 0.254µm | UL94V-0 | ||
| SH8M14TB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PMZB600UNELTwicea Part #17568-375-PMZB600UNEL | NXP Semiconductors |
Small Signal Field-Effect Transistor
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| Min.:1 Mult.:1 | - | gold-plated | - | 32 | - | - | - | socket | 1x32 | 2.54mm | - | - | THT | 1.22 g | NXP SEMICONDUCTORS | female | - | - | - | - | - | - | Transferred | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | - | unknown | 1.5A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | ||
| PMZB600UNEL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PMZB600UNELTwicea Part #554-375-PMZB600UNEL | Nexperia |
Description: Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
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| 10000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 25 | 3 | SILICON | 1 | socket | 1x25 | 2.54mm | - | 0.6 A | THT | 0.95 g | NEXPERIA | female | - | - | PLASTIC/EPOXY | DFN1006B-3, 3 PIN | RECTANGULAR | CHIP CARRIER | Active | - | Yes | - | straight | pin strips | -40...163°C | e3 | - | EAR99 | TIN | BOTTOM | NO LEAD | 260 | compliant | 1.5A | 30 | - | IEC-60134 | R-PBCC-N3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 3 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.254µm | UL94V-0 | |
| PMZB600UNEL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK3335Twicea Part #689-375-2SK3335 | SANYO Electric Co Ltd |
Transistor
Datasheet
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| 400
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | 16 | - | - | - | socket | 2x8 | 2.54mm | - | - | SMT | 0.9 g | SANYO ELECTRIC CO LTD | female | - | - | - | , | - | - | Obsolete | - | - | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | - | unknown | 1.5A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| 2SK3335 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #STP22NM60Twicea Part #761-375-STP22NM60 | STMicroelectronics |
22A, 600V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Min.:1 Mult.:1 | - | gold-plated | NO | 82 | 3 | SILICON | 1 | socket | 2x41 | 2.54mm | - | 22 A | THT | 4.44 g | STMICROELECTRONICS | female | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | TO-220AB | Yes | 2.54mm | straight | pin strips | -40...163°C | e3 | Yes | EAR99 | MATTE TIN | SINGLE | THROUGH-HOLE | - | not_compliant | 1.5A | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-220AB | 0.25 Ω | 80 A | 600 V | 650 mJ | METAL-OXIDE SEMICONDUCTOR | 192 W | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| STP22NM60 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #AP10TN028MTTwicea Part #2957-375-AP10TN028MT | Advanced Power Electronics Corp |
Description: Power Field-Effect Transistor
Datasheet
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| 35354
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | 40 | - | - | - | socket | 2x20 | 2.54mm | - | - | THT | 2.16 g | ADVANCED POWER ELECTRONICS CORP | female | - | - | - | , | - | - | Contact Manufacturer | - | Yes | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | NOT SPECIFIED | compliant | 1.5A | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| AP10TN028MT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPN1R603PLTwicea Part #4669-375-TPN1R603PL | Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
Datasheet
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| 380
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 4 | 8 | SILICON | 1 | socket | 2x2 | 2.54mm | - | 80 A | THT | 0.22 g | TOSHIBA CORP | female | 175 °C | - | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | DUAL | FLAT | - | unknown | 1.5A | - | - | - | S-PDSO-F8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0025 Ω | 200 A | 30 V | 52 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | 60V | 200 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TPN1R603PL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #NTMFS4C324NT1GTwicea Part #598-375-NTMFS4C324NT1G | onsemi |
Power Field-Effect Transistor
Datasheet
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| 30000
In Stock
| Min.:1 Mult.:1 | 45 Weeks | gold-plated | YES | 20 | 5 | SILICON | 1 | socket | 1x20 | 2.54mm | - | 136 A | SMT | 1.14 g | ONSEMI | female | 150 °C | -55 °C | PLASTIC/EPOXY | SO-8FL, DFN5, 6 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | e3 | - | EAR99 | Matte Tin (Sn) - annealed | DUAL | FLAT | 260 | not_compliant | 3A | 30 | - | - | R-PDSO-F5 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | N-CHANNEL | - | 0.0024 Ω | 352 A | 30 V | 549 mJ | METAL-OXIDE SEMICONDUCTOR | - | 150V | 67 pF | - | beryllium copper | 1 | 0.75µm | UL94V-0 | |
| NTMFS4C324NT1G | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TPC8067-HTwicea Part #4669-375-TPC8067-H | Toshiba America Electronic Components |
TRANSISTOR 9000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-5R1S, SOP-8, FET General Purpose Small Signal
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| 9244
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 13 | 8 | SILICON | 1 | socket | 1x13 | 2.54mm | - | 9 A | SMT | 0.74 g | TOSHIBA CORP | female | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | End Of Life | SOT | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | DUAL | GULL WING | - | unknown | 3A | - | 8 | - | R-PDSO-G8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.033 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 150V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TPC8067-H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #12N65L-TF1-TTwicea Part #15973-375-12N65L-TF1-T | Unisonic Technologies Co Ltd |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Datasheet
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| 30000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 6 | - | - | 1 | socket | 2x3 | 2.54mm | - | 12 A | THT | 0.28 g | UNISONIC TECHNOLOGIES CO LTD | female | 150 °C | - | - | , | - | - | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | NOT SPECIFIED | compliant | 1.5A | NOT SPECIFIED | - | - | - | - | SINGLE | - | - | - | N-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 51 W | 60V | - | - | beryllium copper | - | 0.254µm | UL94V-0 | |
| 12N65L-TF1-T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RT1P136CTwicea Part #16528-375-RT1P136C | Isahaya Electronics Corporation |
Transistor
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| Min.:1 Mult.:1 | - | gold-plated | - | 48 | - | - | - | socket | 1x48 | 2.54mm | - | - | THT | 3.6 g | ISAHAYA ELECTRONICS CORP | female | - | - | - | , | - | - | Contact Manufacturer | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | - | unknown | 1.5A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| RT1P136C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SSM6L39TUTwicea Part #4669-375-SSM6L39TU | Toshiba America Electronic Components |
TRANSISTOR 1600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, UF6, 2-2T1B, 6 PIN, FET General Purpose Small Signal
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| 754
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | 36 | - | - | - | socket | 1x36 | 2.54mm | - | - | THT | 2.7 g | TOSHIBA CORP | female | - | - | - | UF6, 2-2T1B, 6 PIN | - | - | Active | - | Yes | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | - | unknown | 1.5A | - | 6 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| SSM6L39TU | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MMF65R380QTHTwicea Part #4006-375-MMF65R380QTH | MagnaChip Semiconductor Ltd |
Power Field-Effect Transistor,
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| Min.:1 Mult.:1 | - | gold-plated | NO | 28 | 3 | SILICON | 1 | socket | 1x28 | 2.54mm | - | 10.6 A | THT | 2.1 g | MAGNACHIP SEMICONDUCTOR LTD | female | 150 °C | - | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 1.5A | NOT SPECIFIED | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.38 Ω | 31.8 A | 650 V | 215 mJ | METAL-OXIDE SEMICONDUCTOR | 30.5 W | 60V | 38.7 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| MMF65R380QTH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPCC8105Twicea Part #4669-375-TPCC8105 | Toshiba America Electronic Components |
Description: TRANSISTOR 23000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, 2-3X1A, 8 PIN, FET General Purpose Small Signal
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| 50000
In Stock
| Min.:1 Mult.:1 | 16 Weeks | gold-plated | YES | 18 | 8 | SILICON | 1 | socket | 1x18 | 2.54mm | - | 23 A | THT | 1.35 g | TOSHIBA CORP | female | - | - | PLASTIC/EPOXY | THIN, 2-3X1A, 8 PIN | SQUARE | SMALL OUTLINE | Active | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | DUAL | FLAT | - | unknown | 1.5A | - | 8 | - | S-PDSO-F8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0104 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TPCC8105 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #T2N7002AKTwicea Part #4669-375-T2N7002AK | Toshiba America Electronic Components |
Small Signal MOS FET (Single)
Datasheet
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| 900000
In Stock
| Min.:1 Mult.:1 | 20 Weeks | gold-plated | YES | 13 | 3 | SILICON | 1 | socket | 1x13 | 2.54mm | - | 0.2 A | THT | 0.98 g | TOSHIBA CORP | female | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | DUAL | GULL WING | 260 | unknown | 1.5A | 30 | - | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 4.7 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | 60V | 0.7 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| T2N7002AK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #AP2763I-ATwicea Part #2957-375-AP2763I-A | Advanced Power Electronics Corp |
TRANSISTOR 8 A, 750 V, 1.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220CFM, 3 PIN, FET General Purpose Power
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| 2000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 32 | 3 | SILICON | 1 | socket | 2x16 | 2.54mm | - | 8 A | THT | 2.93 g | ADVANCED POWER ELECTRONICS CORP | female | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | TO-220AB | - | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | SINGLE | THROUGH-HOLE | - | compliant | 1.5A | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 1.45 Ω | 30 A | 750 V | 32 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| AP2763I-A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK62N60WTwicea Part #4669-375-TK62N60W | Toshiba America Electronic Components |
TRANSISTOR POWER, FET, FET General Purpose Power
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| 230
In Stock
| Min.:1 Mult.:1 | - | gold-plated | NO | 10 | 3 | SILICON | 1 | socket | 2x5 | 2.54mm | - | 61.8 A | THT | 0.92 g | TOSHIBA CORP | female | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 1.5A | NOT SPECIFIED | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | TO-247 | 0.04 Ω | 247 A | 600 V | 698 mJ | METAL-OXIDE SEMICONDUCTOR | 400 W | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | |
| TK62N60W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BSZ0702LSTwicea Part #376-375-BSZ0702LS | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
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| 255000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 11 | 8 | SILICON | 1 | socket | 1x11 | 2.54mm | - | 40 A | SMT | 0.66 g | INFINEON TECHNOLOGIES AG | female | 150 °C | -55 °C | PLASTIC/EPOXY | - | SQUARE | SMALL OUTLINE | Obsolete | - | Yes | - | straight | pin strips | -40...163°C | e3 | - | EAR99 | TIN | DUAL | NO LEAD | - | unknown | 1.5A | - | - | IEC-61249-2-21; IEC-68-1 | S-PDSO-N8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.004 Ω | 160 A | 60 V | 117 mJ | METAL-OXIDE SEMICONDUCTOR | 69 W | 60V | 44 pF | - | beryllium copper | 1 | 0.254µm | UL94V-0 | |
| BSZ0702LS |
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