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TK11S10N1L Tech Specifications
Toshiba TK11S10N1L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Contact plating | gold-plated | |
| Number of pins | 84pins | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Drain Current-Max (ID) | 11 A | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Type of connector | pin strips | |
| Connector | socket | |
| Kind of connector | female | |
| Spatial orientation | straight | |
| Contacts pitch | 2.54mm | |
| Electrical mounting | THT | |
| Connector pinout layout | 2x42 | |
| Row pitch | 2.54mm | |
| Gross weight | 5.04 g | |
| Operating temperature | -40...163°C | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Current rating | 1.5A | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PSSO-G2 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| DS Breakdown Voltage-Min | 100 V | |
| Avalanche Energy Rating (Eas) | 33.8 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 65 W | |
| Rated voltage | 60V | |
| Feedback Cap-Max (Crss) | 67 pF | |
| Profile | beryllium copper | |
| Plating thickness | 0.75µm | |
| Flammability rating | UL94V-0 |
TK11S10N1L Documents
Download datasheets and manufacturer documentation for TK11S10N1L
- Datasheetsf879a8b906dafa4ce598cbb951a77ab8.pdf
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