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RD35HUF2 Tech Specifications
Mitsubishi RD35HUF2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Contact plating | gold-plated | |
| Number of pins | 9pins | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 2 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | ROHS COMPLIANT PACKAGE-8 | |
| Drain Current-Max (ID) | 10 A | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Type of connector | pin strips | |
| Connector | socket | |
| Kind of connector | female | |
| Spatial orientation | straight | |
| Contacts pitch | 2.54mm | |
| Electrical mounting | THT | |
| Connector pinout layout | 1x9 | |
| Gross weight | 0.34 g | |
| Operating temperature | -40...163°C | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Current rating | 1.5A | |
| Pin Count | 8 | |
| JESD-30 Code | R-CDFM-F8 | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 40 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Rated voltage | 60V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Profile | beryllium copper | |
| Plating thickness | 0.254µm | |
| Flammability rating | UL94V-0 |
RD35HUF2 Documents
Download datasheets and manufacturer documentation for RD35HUF2
- Datasheets274e7185ecd4db3b3caa86c5eef6f165.pdf
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