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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Contact plating | Surface Mount | Number of pins | Housing material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Ambient operating temperature | Backlight voltage | Body diameter | Bolt length | Bolt type | Button and head shape | Button head and shape | Button shape | Connector | Connector pinout layout | Contacts pitch | Description | Dielectric strength | Drain Current-Max (ID) | Electrical mounting | Gross weight | Head and button shape | Ihs Manufacturer | Illuation color | Illumination voltage | Indicator type | Kind of connector | LED operating life | LED service life | LED working life | Lighting color | Lighting voltage | Load voltage | Locking | Manufacturer Package Code | Minimum switching cycles (electrical) | Mounting diameter | Nominal voltage | Number of switching cycles (electrical) | Operating ambient temperature | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protection class | Relative humidity | Rohs Code | Row pitch | Spatial orientation | Switching cycles (electric) | Switching scheme | Transport package size/quantity | Transport packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of adapter for programmers | Type of connector | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Color | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Contact resistance | Configuration | Insulation resistance | Leakage current | Operating Mode | Case Connection | Switch type | Control mode | Transistor Application | Polarity/Channel Type | Operating temperature range | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Load current | Rated voltage | Fuse | Control current | Control voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Profile | Power Dissipation Ambient-Max | Switching time | Saturation Current | Power Gain-Min (Gp) | Contacts | Backlight color | Diameter | Height | Width | Plating thickness | Body height | Flammability rating |
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  | Mfr. Part #FLL177METwicea Part #16007-375-FLL177ME | SUMITOMO ELECTRIC Device Innovations Inc |
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN
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| 74
In Stock
| Min.:1 Mult.:1 | - | - | YES | - | - | 2 | GALLIUM ARSENIDE | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EUDYNA DEVICES INC | - | - | - | - | - | - | - | - | - | - | - | CASE ME | - | - | - | - | - | - | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | Yes | EAR99 | - | - | - | HIGH RELIABILITY | - | DUAL | FLAT | NOT SPECIFIED | - | unknown | - | NOT SPECIFIED | 2 | - | R-CDFM-F2 | Not Qualified | - | SINGLE | - | - | DEPLETION MODE | SOURCE | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | 15 V | - | JUNCTION | - | - | - | - | - | - | - | L BAND | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| FLL177ME | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI4838BDY-T1-GE3Twicea Part #534-375-SI4838BDY-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 22.5A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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| 10000
In Stock
| Min.:1 Mult.:1 | - | - | YES | - | - | 8 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 22.5 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | DUAL | GULL WING | 260 | - | not_compliant | - | 30 | - | - | R-PDSO-G8 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | - | - | MS-012AA | 0.0027 Ω | - | 12 V | - | METAL-OXIDE SEMICONDUCTOR | 5.7 W | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | |
| SI4838BDY-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI2303BDS-T1-E3Twicea Part #534-375-SI2303BDS-T1-E3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 1.49A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3
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| 3224
In Stock
| Min.:1 Mult.:1 | - | - | YES | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 1.49 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | ROHS COMPLIANT PACKAGE-3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | DUAL | GULL WING | 260 | - | unknown | - | 30 | - | - | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | - | P-CHANNEL | - | - | TO-236 | 0.2 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | 0.9 W | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | |
| SI2303BDS-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFS3607TRLPBFTwicea Part #3717-375-IRFS3607TRLPBF | International Rectifier |
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Min.:1 Mult.:1 | - | - | YES | - | nickel-plated brass | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 2000 (50 Hz / 5 s) V | 80 A | - | 23.67 | ring - cone; switch handle | INTERNATIONAL RECTIFIER CORP | redmin | 12 V | ring | - | ≥40000 hours | - | - | - | - | - | - | - | - | 19 mm | 250 V | - | - | 150 °C | - | PLASTIC/EPOXY | LEAD FREE, PLASTIC, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | D2PAK | IP65 | 45...85 % | Yes | - | - | ≥50000 | ON-ON - 2 positions with 1NO1NC fixation | - | 62*27.5*28/300 | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN OVER NICKEL | - | - | - | SINGLE | GULL WING | - | - | compliant | - | - | 3 | - | R-PSSO-G2 | Not Qualified | ≤50 mOhm | SINGLE WITH BUILT-IN DIODE | ≥1000 MOhm | - | ENHANCEMENT MODE | DRAIN | Vandal-proof rotary switch series LAS1-AGQ-X with illumination | - | SWITCHING | N-CHANNEL | -25…+55 °C | 5 A | TO-263AB | 0.009 Ω | 310 A | 75 V | 120 mJ | METAL-OXIDE SEMICONDUCTOR | 140 W | - | - | - | - | - | - | - | - | - | - | 1 | - | 3Pin+2Pin | - | 22 mm | - | - | - | - | - | ||
| IRFS3607TRLPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI1029X-T1-GE3Twicea Part #534-375-SI1029X-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 0.305A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN
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| 1132
In Stock
| Min.:1 Mult.:1 | 13 Weeks | - | YES | - | nickel-plated brass | 6 | SILICON | 2 | - | - | - | - | - | ring - cone; flat button | - | - | - | - | - | - | 2000 (50 Hz / 5 s) V | 0.305 A | - | 19.50 | - | VISHAY INTERTECHNOLOGY INC | - | - | "ON" pictogram | - | ≥40000 hours | - | - | blue | 12 V | - | - | - | - | 19 mm | 250 V | ≥50000 | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | IP65 | 45...85 % | Yes | - | - | - | ON-(ON) without fixation | - | 62*27.5*28/100 | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | LOW THRESHOLD | - | DUAL | FLAT | 260 | - | compliant | - | 30 | - | - | R-PDSO-F6 | Not Qualified | ≤50 mΩ | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ≥1000 MΩ | - | ENHANCEMENT MODE | - | LAS1-AGQ series vandal proof button with backlight | - | SWITCHING | N-CHANNEL AND P-CHANNEL | -25…+55 °C | 5 A | - | 1.4 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 0.28 W | - | - | - | - | - | - | - | - | - | - | 1 | - | 3Pin+2Pin | - | 22 mm | - | - | - | - | - | |
| SI1029X-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #2SK3113Twicea Part #391-375-2SK3113 | Renesas Electronics Corporation |
2000mA, 600V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA, TO-251, MP-3, 3 PIN
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| Min.:1 Mult.:1 | - | - | NO | - | nickel-plated brass | 3 | SILICON | 1 | - | - | - | - | - | - | ring - cone; flat button | - | - | - | - | - | 2000 (50 Hz / 5 s) V | 2 A | - | 20.88 | - | RENESAS ELECTRONICS CORP | greemin | 12 V | ring + pictogram "ON" | - | ≥40000 hours | - | - | - | - | - | - | - | - | 19 mm | - | ≥50000 | - | 150 °C | - | PLASTIC/EPOXY | TO-251, MP-3, 3 PIN | RECTANGULAR | IN-LINE | Obsolete | TO-251AA | IP65 | 45...85 % | No | - | - | - | ON-(ON) without fixation | - | 62*27.5*28/250 | - | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | AVALANCHE ENERGY RATED | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | 3 | - | R-PSIP-T3 | Not Qualified | ≤50 mΩ | SINGLE WITH BUILT-IN DIODE | ≥1000 MΩ | - | ENHANCEMENT MODE | DRAIN | Vandal proof button from LAS1-AGQ series with illumination | - | SWITCHING | N-CHANNEL | -25…+55 °C | 5 A | TO-251AA | 4.4 Ω | - | 600 V | - | METAL-OXIDE SEMICONDUCTOR | 1 W | - | 250 V | - | - | - | - | - | - | - | - | - | - | 3Pin+2Pin | - | 22 mm | - | - | - | - | - | ||
| 2SK3113 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SQD40061EL_GE3Twicea Part #534-375-SQD40061EL_GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 100A I(D), 40V, 0.0051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
Datasheet
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| 10000
In Stock
| Min.:1 Mult.:1 | 18 Weeks | - | YES | - | nickel-plated brass | 2 | SILICON | 1 | - | 12 V | - | - | - | - | - | ring and flat button | - | - | - | - | 2000 (50 Hz / 1 min) V | 100 A | - | 14.80 | - | VISHAY INTERTECHNOLOGY INC | - | - | dot | - | - | - | 40000 hours min | - | - | - | - | - | - | 16 mm | 250 V | 50000 min | - | 175 °C | -55 °C | PLASTIC/EPOXY | DPAK-3/2 | RECTANGULAR | SMALL OUTLINE | Active | - | IP65 | 45...85 % | Yes | - | - | - | ON-ON with fixing | - | 62*27.5*28/100 | 470 ns | 305 ns | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | SINGLE | GULL WING | 260 | - | unknown | - | 30 | - | AEC-Q101 | R-PSSO-G2 | - | 50 mΩ max | SINGLE WITH BUILT-IN DIODE | 1000 MΩ min | - | ENHANCEMENT MODE | DRAIN | LAS2-GQPF series vandal-proof button with backlight | - | - | P-CHANNEL | -25…+55 °C | 3 A | TO-252AA | 0.0051 Ω | 300 A | 40 V | 84 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 1000 pF | - | - | - | - | 1 | - | 3Pin+2Pin | green | - | - | - | - | - | - | |
| SQD40061EL_GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFS7730TRL7PPTwicea Part #3717-375-IRFS7730TRL7PP | International Rectifier |
Power Field-Effect Transistor
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| Min.:1 Mult.:1 | - | - | - | - | nickel-plated brass | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2000 (50 Hz / 1 min) V | - | - | 14.00 | ring - cone; flat button | INTERNATIONAL RECTIFIER CORP | redmin | 12 V | ring + pictogram 'ON' | - | - | 40000 hours min | - | - | - | - | - | - | 50000 | 16 mm | - | - | - | - | - | - | - | - | - | Transferred | - | IP65 | 45...85 % | No | - | - | - | ON-(ON) without latching | - | 62*27.5*28/100 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | 50 mOhm max | - | 1000 MOhm min | - | - | - | LAS2-GQF series vandal resistant button with backlight | - | - | - | -25…+55 °C | 3 A | - | - | - | - | - | - | - | - | 250 V | - | - | - | - | - | - | - | - | 1 | - | 3Pin+2Pin | - | - | - | - | - | - | - | ||
| IRFS7730TRL7PP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SIA441DJ-T1-GE3Twicea Part #534-375-SIA441DJ-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 12A I(D), 40V, 0.047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
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| 14850
In Stock
| Min.:1 Mult.:1 | 18 Weeks | - | YES | - | nickel-plated brass | 3 | SILICON | 1 | - | 12 V | - | - | - | flat ring and button | - | - | - | - | - | - | 2000 (50 Hz / 1 min) V | 12 A | - | 14.60 | - | VISHAY INTERTECHNOLOGY INC | - | - | ring | - | ≥40000 hours | - | - | - | - | - | - | - | - | 16 mm | - | ≥50000 | - | 150 °C | -55 °C | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | SQUARE | SMALL OUTLINE | Active | - | IP65 | 45...85 % | Yes | - | - | - | ON-ON with fixation | - | 62*27.5*28/100 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | DUAL | NO LEAD | 260 | - | compliant | - | - | - | - | S-PDSO-N3 | Not Qualified | ≤50 mΩ | SINGLE WITH BUILT-IN DIODE | ≥1000 MΩ | - | ENHANCEMENT MODE | DRAIN | LAS2-GQPF series vandal-resistant button with backlight | - | SWITCHING | P-CHANNEL | -25…+55 °C | 3 A | - | 0.047 Ω | 30 A | 40 V | 8.5 mJ | METAL-OXIDE SEMICONDUCTOR | 19 W | - | 250 V | - | - | - | - | - | - | - | - | - | - | 3Pin+2Pin | red | - | - | - | - | - | - | |
| SIA441DJ-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFZ48NPBFTwicea Part #3717-375-IRFZ48NPBF | International Rectifier |
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | 1 | - | - | 18 mm | 40 mm | straight with hook | - | - | - | - | - | - | Cylindrical lock for box with flat key, plastic handle | - | 64 A | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | LEAD FREE PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN OVER NICKEL | - | AVALANCHE RATED, HIGH RELIABILITY | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | - | 3 | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.014 Ω | 210 A | 55 V | 190 mJ | METAL-OXIDE SEMICONDUCTOR | 94 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 25 mm | - | ||
| IRFZ48NPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #NE3210S01-T1BTwicea Part #391-375-NE3210S01-T1B | Renesas Electronics Corporation |
Description: NE3210S01-T1B
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| Min.:1 Mult.:1 | - | - | YES | - | ABS UL94-V0 | 4 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 2500 (50 Hz / 1 min.) V | 0.015 A | - | 124.50 | - | RENESAS ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | ~90...250 V | - | - | - | - | - | - | -40...+80 °C | 125 °C | - | PLASTIC/EPOXY | MICROWAVE, X-PXMW-G4 | UNSPECIFIED | MICROWAVE | Obsolete | - | - | 35...85 % | Yes | - | - | - | - | - | 42.5*35.5*15/100 | - | - | - | - | - | e0 | Yes | EAR99 | Single-phase linear solid state relay from the SCR series with fuse | TIN LEAD | - | - | 8541.21.00.95 | UNSPECIFIED | GULL WING | 230 | 62 mm | compliant | - | 30 | - | - | X-PXMW-G4 | Not Qualified | - | SINGLE | ≥100 (at Uinsp.dc=500V) MΩ | not more than 0.5% mA | DEPLETION MODE | SOURCE | - | phase control | AMPLIFIER | N-CHANNEL | - | - | - | - | - | 3 V | - | HETERO-JUNCTION | - | 25 A | - | 10x38 mm 10 A | ≤4-20 mA | - | - | KU BAND | - | 0.165 W | ≤1.0 ms | - | 12 dB | - | - | - | 35 mm | - | - | - | - | ||
| NE3210S01-T1B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF520PBFTwicea Part #534-375-IRF520PBF | Vishay Intertechnologies |
Description: Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| 10007
In Stock
| Min.:1 Mult.:1 | 12 Weeks | - | NO | - | ABS UL94-V0 | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 2500 (50 Hz / 1 min.) V | 9.2 A | - | 86.00 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | 5...200 V | - | - | - | - | - | - | -40...+80 °C | 175 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AB | - | 35...85 % | Yes | - | - | - | - | 42.5*35.5*15/50 | - | - | - | - | - | - | e3 | Yes | EAR99 | Single-phase solid state relay series SSR | MATTE TIN | - | - | - | SINGLE | THROUGH-HOLE | 260 | 62 mm | not_compliant | - | 30 | 3 | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | >100 (at Uinsp.dc=500V) MOhm | - | ENHANCEMENT MODE | DRAIN | - | with zero crossing control | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.27 Ω | 37 A | 100 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | 50 A | - | - | - | 3...32 (DC) V | - | - | - | - | - | - | - | - | - | - | 22.5 mm | 45 mm | - | - | - | |
| IRF520PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SQ3427EEV-T1-GE3Twicea Part #534-375-SQ3427EEV-T1-GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 5.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
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| 355
In Stock
| Min.:1 Mult.:1 | - | - | YES | - | ABS UL94-V0 | 6 | SILICON | 1 | -40...+80 °C | - | - | - | - | - | - | - | - | - | - | - | 2500 (50 Hz / 1 min.) V | 5.5 A | - | 123.20 | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | ~24...380 V | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | 35...85 % | Yes | - | - | - | - | - | 38*22*38/50 | - | - | - | - | - | - | - | EAR99 | Single-phase solid state relay series SSR | - | - | - | - | DUAL | GULL WING | 260 | 62 mm | unknown | - | 40 | - | - | R-PDSO-G6 | - | - | SINGLE WITH BUILT-IN DIODE | ≥100 (at Uisp.dc=500V) MΩ | 5 mA | ENHANCEMENT MODE | - | - | with zero crossing control | - | P-CHANNEL | - | - | MO-193AA | 0.082 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 5 W | 16 A | - | 10x38 mm 10 A | - | 4...32 (DC) V | 85 pF | - | - | - | ≤8.3 ms | - | - | - | - | - | 35 mm | 48 mm | - | - | - | |
| SQ3427EEV-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF7946TRPBFTwicea Part #3717-375-IRF7946TRPBF | International Rectifier |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | PA+GF UL94-V2, POM | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | 500 (50 Hz, 1 min) V | 90 A | - | 1.02 | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | non-locking | - | - | - | - | 1000000 min | - | 150 °C | - | - | - | - | - | Transferred | - | IP40 | - | Yes | - | - | - | NO - NC SPST | - | 40*31*30/1000 | - | - | - | - | - | - | - | EAR99 | Miniature button series KS12 | - | housing/button - black/red | - | - | - | - | - | 10.85 mm | compliant | - | - | - | - | - | - | 50 mΩ max | SINGLE | 100 MΩ min | - | - | - | - | - | - | N-CHANNEL | -40...+85 °C | 0.01...0.1 A | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 96 W | - | 2...30 (DC) V | - | - | - | - | - | - | - | - | - | - | - | - | - | 11.1 mm | 10.9 mm | - | - | - | ||
| IRF7946TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SI7431DP-T1-GE3Twicea Part #534-375-SI7431DP-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 2.2A I(D), 200V, 0.174ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Datasheet
Compare
| 490
In Stock
| Min.:1 Mult.:1 | 13 Weeks | - | YES | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.2 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | UNSPECIFIED | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | - | ULTRA-LOW RESISTANCE | - | DUAL | C BEND | 260 | - | compliant | - | 30 | - | - | R-XDSO-C5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | P-CHANNEL | - | - | - | 0.174 Ω | 30 A | 200 V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | 5.4 W | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | |
| SI7431DP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFZ24NPBFTwicea Part #17568-375-IRFZ24NPBF | NXP Semiconductors |
17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 17 A | - | - | - | NXP SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | ESD PROTECTED | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | - | R-PSFM-T3 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.07 Ω | 68 A | 55 V | 30 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFZ24NPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFP9140Twicea Part #3644-375-IRFP9140 | Harris Semiconductor |
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 19 A | - | - | - | HARRIS SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | No | - | - | - | - | - | - | 140 ns | 120 ns | - | - | - | e0 | - | EAR99 | - | TIN LEAD | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | P-CHANNEL | - | - | TO-247 | 0.2 Ω | 76 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | - | - | - | - | - | - | 150 W | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFP9140 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFP9140Twicea Part #534-375-IRFP9140 | Vishay Intertechnologies |
Power Field-Effect Transistor, 21A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 21 A | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | No | EAR99 | - | TIN LEAD | - | - | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | - | R-PSFM-T3 | Not Qualified | - | SINGLE | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | P-CHANNEL | - | - | TO-247AC | 0.2 Ω | 84 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | 180 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRFP9140 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF1407PBFTwicea Part #3717-375-IRF1407PBF | International Rectifier |
Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220AB, 3 PIN
Datasheet
Compare
| 865
In Stock
| Min.:1 Mult.:1 | - | - | NO | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 130 A | - | 21.39 g | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | PLASTIC, TO-220AB, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | Yes | - | - | - | - | - | - | - | - | extension module | - | - | e3 | Yes | EAR99 | - | MATTE TIN OVER NICKEL | - | AVALANCHE RATED, ULTRA-LOW RESISTANCE | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | - | 3 | - | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.0078 Ω | 520 A | 75 V | 390 mJ | METAL-OXIDE SEMICONDUCTOR | 330 W | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| IRF1407PBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPN1R603PLTwicea Part #4669-375-TPN1R603PL | Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
Datasheet
Compare
| 380
In Stock
| Min.:1 Mult.:1 | - | gold-plated | YES | 4 | - | 8 | SILICON | 1 | - | - | - | - | - | - | - | - | socket | 2x2 | 2.54mm | - | - | 80 A | THT | 0.22 g | - | TOSHIBA CORP | - | - | - | female | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | - | - | - | 2.54mm | straight | - | - | - | - | - | - | - | pin strips | -40...163°C | - | - | EAR99 | - | - | - | - | - | DUAL | FLAT | - | - | unknown | 1.5A | - | - | - | S-PDSO-F8 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.0025 Ω | 200 A | 30 V | 52 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | - | 60V | - | - | - | 200 pF | - | beryllium copper | - | - | - | - | - | - | - | - | - | 0.75µm | - | UL94V-0 | |
| TPN1R603PL |
Index :
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