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SIA441DJ-T1-GE3 Tech Specifications
Vishay SIA441DJ-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 18 Weeks | |
| Surface Mount | YES | |
| Housing material | nickel-plated brass | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Gross weight | 14.60 | |
| Transport packaging size/quantity | 62*27.5*28/100 | |
| Indicator type | ring | |
| Switching scheme | ON-ON with fixation | |
| Protection class | IP65 | |
| Number of switching cycles (electrical) | ≥50000 | |
| Backlight voltage | 12 V | |
| Relative humidity | 45...85 % | |
| Dielectric strength | 2000 (50 Hz / 1 min) V | |
| LED operating life | ≥40000 hours | |
| Button and head shape | flat ring and button | |
| Mounting diameter | 16 mm | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | |
| Drain Current-Max (ID) | 12 A | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | S-PDSO-N3 | |
| Qualification Status | Not Qualified | |
| Contact resistance | ≤50 mΩ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation resistance | ≥1000 MΩ | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Switch type | LAS2-GQPF series vandal-resistant button with backlight | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Operating temperature range | -25…+55 °C | |
| Rated current | 3 A | |
| Drain-source On Resistance-Max | 0.047 Ω | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| DS Breakdown Voltage-Min | 40 V | |
| Avalanche Energy Rating (Eas) | 8.5 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 19 W | |
| Rated voltage | 250 V | |
| Contacts | 3Pin+2Pin | |
| Backlight color | red |
SIA441DJ-T1-GE3 Documents
Download datasheets and manufacturer documentation for SIA441DJ-T1-GE3
- Datasheets1ce9bf5a0bd3b648d4a4f79ddba8074f.pdf
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