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SI1029X-T1-GE3 Tech Specifications
Vishay SI1029X-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 13 Weeks | |
| Surface Mount | YES | |
| Housing material | nickel-plated brass | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 2 | |
| Gross weight | 19.50 | |
| Transport packaging size/quantity | 62*27.5*28/100 | |
| Indicator type | "ON" pictogram | |
| Switching scheme | ON-(ON) without fixation | |
| Protection class | IP65 | |
| Number of switching cycles (electrical) | ≥50000 | |
| Lighting voltage | 12 V | |
| Lighting color | blue | |
| Relative humidity | 45...85 % | |
| Nominal voltage | 250 V | |
| Dielectric strength | 2000 (50 Hz / 5 s) V | |
| LED operating life | ≥40000 hours | |
| Button and head shape | ring - cone; flat button | |
| Mounting diameter | 19 mm | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, SC-89, 6 PIN | |
| Drain Current-Max (ID) | 0.305 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Additional Feature | LOW THRESHOLD | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-F6 | |
| Qualification Status | Not Qualified | |
| Contact resistance | ≤50 mΩ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Insulation resistance | ≥1000 MΩ | |
| Operating Mode | ENHANCEMENT MODE | |
| Switch type | LAS1-AGQ series vandal proof button with backlight | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Operating temperature range | -25…+55 °C | |
| Rated current | 5 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.28 W | |
| Saturation Current | 1 | |
| Contacts | 3Pin+2Pin | |
| Diameter | 22 mm |
SI1029X-T1-GE3 Documents
Download datasheets and manufacturer documentation for SI1029X-T1-GE3
- Datasheets5458d406772529daf4d7938c9b2b5013.pdf
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