Transistors - Special Purpose Products For Sale - PDF - Discrete Semiconductor Products

Discrete Semiconductor Products
Transistors - Special Purpose

						Contact plating	Surface Mount	Number of pins	Number of Terminals	Transistor Element Material	Exterior Housing Material	Cable	Connector	Connector pinout layout	Contact material	Contacts pitch	Date Of Intro	Drain Current-Max (ID)	Electrical mounting	For Use With/Related Products	Gross weight	Ihs Manufacturer	Kind of connector	Name	Number of Elements	Operating Temperature-Max	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Rohs Code	Row pitch	Spatial orientation	Teral type	Transport packaging size/quantity	Type of connector	Operating temperature	Packaging	Part Status	ECCN Code	Connector type	Type	Color	Additional Feature	HTS Code	Terminal Position	Terminal Form	Shielding	Peak Reflow Temperature (Cel)	Depth	Reach Compliance Code	Current rating	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Configuration	Operating Mode	Case Connection	Transistor Application	Polarity/Channel Type	Operating temperature range	DS Breakdown Voltage-Min	FET Technology	Power Dissipation-Max (Abs)	Rated voltage	Conductor diameter	Highest Frequency Band	Profile	Power Dissipation Ambient-Max	Features	Standard	Power Gain-Min (Gp)	Height	Width	Plating thickness	Flammability rating
	Mfr. RD35HUF2 Twicea 539-375-RD35HUF2	Mitsubishi Electric	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-8	500	Min.:1 Mult.:1	gold-plated	YES	9	8	SILICON	2	-	socket	1x9	-	2.54mm	-	10 A	THT	-	0.34 g	MITSUBISHI ELECTRIC CORP	female	-	-	-	CERAMIC, METAL-SEALED COFIRED	ROHS COMPLIANT PACKAGE-8	RECTANGULAR	FLANGE MOUNT	Active	-	-	straight	-	-	pin strips	-40...163°C	-	-	EAR99	-	-	-	-	-	DUAL	FLAT	-	-	-	unknown	1.5A	-	8	R-CDFM-F8	-	COMMON SOURCE, 2 ELEMENTS	ENHANCEMENT MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	40 V	METAL-OXIDE SEMICONDUCTOR	-	60V	-	ULTRA HIGH FREQUENCY BAND	beryllium copper	-	-	-	-	-	-	0.254µm	UL94V-0
RD35HUF2 539-375-RD35HUF2 Mitsubishi Electric : : - : 500 1 : -
	Mfr. RD70HVF1C-501 Twicea 539-375-RD70HVF1C-501	Mitsubishi Electric	RF Power Field-Effect Transistor,		Min.:1 Mult.:1	gold-plated	-	45	-	-	-	-	socket	1x45	-	2.54mm	2019-06-19	-	THT	-	1.71 g	MITSUBISHI ELECTRIC CORP	female	-	-	-	-	,	-	-	Active	-	-	straight	-	-	pin strips	-40...163°C	-	-	EAR99	-	-	-	-	-	-	-	-	-	-	unknown	1.5A	-	-	-	-	-	-	-	-	-	-	-	-	-	60V	-	-	beryllium copper	-	-	-	-	-	-	0.254µm	UL94V-0
RD70HVF1C-501 539-375-RD70HVF1C-501 Mitsubishi Electric : : - : - 1 : -
	Mfr. RD02MUS1B Twicea 539-375-RD02MUS1B	Mitsubishi Electric	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10		Min.:1 Mult.:1	gold-plated	YES	90	3	SILICON	1	-	socket	2x45	-	2.54mm	-	1.5 A	THT	-	4.05 g	MITSUBISHI ELECTRIC CORP	female	-	-	-	UNSPECIFIED	CHIP CARRIER, R-XQCC-N3	RECTANGULAR	CHIP CARRIER	Obsolete	-	2.54mm	straight	-	-	pin strips	-40...163°C	-	-	EAR99	-	-	-	-	-	QUAD	NO LEAD	-	-	-	unknown	1.5A	-	10	R-XQCC-N3	Not Qualified	SINGLE	ENHANCEMENT MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	30 V	METAL-OXIDE SEMICONDUCTOR	-	60V	-	ULTRA HIGH FREQUENCY BAND	beryllium copper	-	-	-	-	-	-	0.254µm	UL94V-0
RD02MUS1B 539-375-RD02MUS1B Mitsubishi Electric : : - : - 1 : -
	Mfr. MGFS45V2527A Twicea 539-375-MGFS45V2527A	Mitsubishi Electric	Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-51, 3 PIN	200	Min.:1 Mult.:1	-	YES	-	2	GALLIUM ARSENIDE	1	4x2 UTP Cat 5e	-	-	bronze nickel plated tinned	-	-	6.5 A	-	Cable Ties 50-250 lb	9.85	MITSUBISHI ELECTRIC CORP	-	Keystone Jack module	-	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	punch-down IDC type 110min	422818.5/200	-	-	Box	Active	EAR99	RJ45 8P8C 180 deg.	Gun	white/gray	HIGH RELIABILITY	8541.29.00.75	DUAL	FLAT	none	-	30 mm	unknown	-	-	3	R-CDFM-F2	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	AMPLIFIER	N-CHANNEL	-40...+70 °C	10 V	JUNCTION	-	-	26-22AWG	S BAND	-	88 W	Adjustable Tension, Ergonomic, Flush Cut	TIA/ EIA 568A/ 568B ISO/ IEC11801	-	23 (full) mm	17 mm	-	-
MGFS45V2527A 539-375-MGFS45V2527A Mitsubishi Electric : : - : 200 1 : -
	Mfr. RD04HMS2 Twicea 539-375-RD04HMS2	Mitsubishi Electric	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3	1	Min.:1 Mult.:1	-	YES	-	2	SILICON	1	-	-	-	-	-	-	3 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	-	150 °C	PLASTIC/EPOXY	FLATPACK, R-PQFP-N2	RECTANGULAR	FLATPACK	Active	Yes	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	QUAD	NO LEAD	-	NOT SPECIFIED	-	unknown	-	NOT SPECIFIED	3	R-PQFP-N2	Not Qualified	SINGLE WITH BUILT-IN DIODE	DEPLETION MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	40 V	METAL-OXIDE SEMICONDUCTOR	50 W	-	-	ULTRA HIGH FREQUENCY BAND	-	-	-	-	-	-	-	-	-
RD04HMS2 539-375-RD04HMS2 Mitsubishi Electric : : - : 1 1 : -
	Mfr. RD70HHF1 Twicea 539-375-RD70HHF1	Mitsubishi Electric	RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	10000	Min.:1 Mult.:1	-	YES	-	2	SILICON	-	-	-	-	-	-	-	20 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	DUAL	FLAT	-	-	-	unknown	-	-	-	R-CDFM-F2	Not Qualified	SINGLE	ENHANCEMENT MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	50 V	METAL-OXIDE SEMICONDUCTOR	150 W	-	-	HIGH FREQUENCY BAND	-	-	-	-	-	-	-	-	-
RD70HHF1 539-375-RD70HHF1 Mitsubishi Electric : : - : 10000 1 : -
	Mfr. MGF0906B Twicea 539-375-MGF0906B	Mitsubishi Electric	Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN	8	Min.:1 Mult.:1	-	YES	-	2	GALLIUM ARSENIDE	-	-	-	-	-	-	-	1.2 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	8541.29.00.75	DUAL	FLAT	-	-	-	unknown	-	-	2	R-CDFM-F2	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	10 V	JUNCTION	-	-	-	S BAND	-	23 W	-	-	10 dB	-	-	-	-
MGF0906B 539-375-MGF0906B Mitsubishi Electric : : - : 8 1 : -
	Mfr. RD70HUP2 Twicea 539-375-RD70HUP2	Mitsubishi Electric	RF Power Field-Effect Transistor,	300	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	-	-	-	,	-	-	Active	Yes	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	NOT SPECIFIED	-	unknown	-	NOT SPECIFIED	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RD70HUP2 539-375-RD70HUP2 Mitsubishi Electric : : - : 300 1 : -
	Mfr. MGFC47B3436B Twicea 539-375-MGFC47B3436B	Mitsubishi Electric	Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-60, 3 PIN	500	Min.:1 Mult.:1	-	YES	-	2	GALLIUM ARSENIDE	-	-	-	-	-	-	-	1.5 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	HIGH RELIABILITY	8541.29.00.75	DUAL	FLAT	-	-	-	unknown	-	-	3	R-CDFM-F2	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	12 V	JUNCTION	-	-	-	S BAND	-	115 W	-	-	-	-	-	-	-
MGFC47B3436B 539-375-MGFC47B3436B Mitsubishi Electric : : - : 500 1 : -
	Mfr. MGFC42V3436 Twicea 539-375-MGFC42V3436	Mitsubishi Electric	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN	455	Min.:1 Mult.:1	-	YES	-	2	GALLIUM ARSENIDE	-	-	-	-	-	-	-	4.5 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	HIGH RELIABILITY	8541.29.00.75	DUAL	FLAT	-	-	-	unknown	-	-	2	R-CDFM-F2	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	10 V	JUNCTION	-	-	-	S BAND	-	78.9 W	-	-	-	-	-	-	-
MGFC42V3436 539-375-MGFC42V3436 Mitsubishi Electric : : - : 455 1 : -
	Mfr. MGFC42V4450 Twicea 539-375-MGFC42V4450	Mitsubishi Electric	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN	455	Min.:1 Mult.:1	-	YES	-	2	GALLIUM ARSENIDE	-	-	-	-	-	-	-	4.5 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	HIGH RELIABILITY	8541.29.00.75	DUAL	FLAT	-	-	-	unknown	-	-	2	R-CDFM-F2	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	10 V	JUNCTION	-	-	-	C BAND	-	79 W	-	-	-	-	-	-	-
MGFC42V4450 539-375-MGFC42V4450 Mitsubishi Electric : : - : 455 1 : -
	Mfr. MGF1102 Twicea 539-375-MGF1102	Mitsubishi Electric	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, GD-2, 4 PIN		Min.:1 Mult.:1	-	YES	-	4	GALLIUM ARSENIDE	-	-	-	-	-	-	-	0.08 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	150 °C	CERAMIC, METAL-SEALED COFIRED	DISK BUTTON, O-CRDB-F4	ROUND	DISK BUTTON	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	LOW NOISE	8541.21.00.75	RADIAL	FLAT	-	-	-	unknown	-	-	4	O-CRDB-F4	Not Qualified	SINGLE	DUAL GATE, DEPLETION MODE	-	AMPLIFIER	N-CHANNEL	-	-	JUNCTION	-	-	-	C BAND	-	0.3 W	-	-	11 dB	-	-	-	-
MGF1102 539-375-MGF1102 Mitsubishi Electric : : - : - 1 : -
	Mfr. RD60HUF1 Twicea 539-375-RD60HUF1	Mitsubishi Electric	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	200	Min.:1 Mult.:1	-	YES	-	2	SILICON	-	-	-	-	-	-	-	20 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	DUAL	FLAT	-	-	-	unknown	-	-	-	R-CDFM-F2	Not Qualified	SINGLE	ENHANCEMENT MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	30 V	METAL-OXIDE SEMICONDUCTOR	150 W	-	-	ULTRA HIGH FREQUENCY BAND	-	-	-	-	-	-	-	-	-
RD60HUF1 539-375-RD60HUF1 Mitsubishi Electric : : - : 200 1 : -
	Mfr. M63850FP Twicea 539-375-M63850FP	Mitsubishi Electric	Description: Power Field-Effect Transistor, 1.5A I(D), 3-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET		Min.:1 Mult.:1	-	YES	-	16	SILICON	-	-	-	-	-	-	-	1.5 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	3	-	PLASTIC/EPOXY	SMALL OUTLINE, R-PDSO-F16	RECTANGULAR	SMALL OUTLINE	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	DUAL	FLAT	-	-	-	unknown	-	-	-	R-PDSO-F16	Not Qualified	COMPLEX	ENHANCEMENT MODE	-	-	N-CHANNEL AND P-CHANNEL	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	-	-	-	-	-	-	-
M63850FP 539-375-M63850FP Mitsubishi Electric : : - : - 1 : -
	Mfr. RD02LUS2-T513 Twicea 539-375-RD02LUS2-T513	Mitsubishi Electric	RF Power Field-Effect Transistor,	30000	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	-	-	-	,	-	-	Active	Yes	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	NOT SPECIFIED	-	unknown	-	NOT SPECIFIED	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RD02LUS2-T513 539-375-RD02LUS2-T513 Mitsubishi Electric : : - : 30000 1 : -
	Mfr. RD06HVF1-501 Twicea 539-375-RD06HVF1-501	Mitsubishi Electric	Description: RF Power Field-Effect Transistor,	5000	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	-	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RD06HVF1-501 539-375-RD06HVF1-501 Mitsubishi Electric : : - : 5000 1 : -
	Mfr. RD30HUF1 Twicea 539-375-RD30HUF1	Mitsubishi Electric	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	500	Min.:1 Mult.:1	-	YES	-	2	SILICON	-	-	-	-	-	-	-	-	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	DUAL	FLAT	-	-	-	unknown	-	-	-	R-CDFM-F2	Not Qualified	SINGLE	ENHANCEMENT MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	30 V	METAL-OXIDE SEMICONDUCTOR	-	-	-	ULTRA HIGH FREQUENCY BAND	-	-	-	-	-	-	-	-	-
RD30HUF1 539-375-RD30HUF1 Mitsubishi Electric : : - : 500 1 : -
	Mfr. MGF1923-01 Twicea 539-375-MGF1923-01	Mitsubishi Electric	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,	8387	Min.:1 Mult.:1	-	YES	-	4	GALLIUM ARSENIDE	-	-	-	-	-	-	-	0.08 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	DISK BUTTON, O-CRDB-F4	ROUND	DISK BUTTON	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	LOW NOISE	-	RADIAL	FLAT	-	-	-	unknown	-	-	-	O-CRDB-F4	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	-	METAL SEMICONDUCTOR	-	-	-	KU BAND	-	-	-	-	11.7 dB	-	-	-	-
MGF1923-01 539-375-MGF1923-01 Mitsubishi Electric : : - : 8387 1 : -
	Mfr. MGFC45V4450A Twicea 539-375-MGFC45V4450A	Mitsubishi Electric	Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN		Min.:1 Mult.:1	-	YES	-	2	GALLIUM ARSENIDE	-	-	-	-	-	-	-	8 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	HIGH RELIABILITY	8541.29.00.75	DUAL	FLAT	-	-	-	unknown	-	-	2	R-CDFM-F2	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	10 V	JUNCTION	-	-	-	C BAND	-	150 W	-	-	-	-	-	-	-
MGFC45V4450A 539-375-MGFC45V4450A Mitsubishi Electric : : - : - 1 : -
	Mfr. MGFC36V4450A-51 Twicea 539-375-MGFC36V4450A-51	Mitsubishi Electric	Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN		Min.:1 Mult.:1	-	YES	-	2	GALLIUM ARSENIDE	-	-	-	-	-	-	-	3.75 A	-	-	-	MITSUBISHI ELECTRIC CORP	-	-	1	175 °C	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	8541.29.00.75	DUAL	FLAT	-	-	-	unknown	-	-	2	R-CDFM-F2	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	AMPLIFIER	N-CHANNEL	-	-	JUNCTION	-	-	-	C BAND	-	25 W	-	-	9 dB	-	-	-	-
MGFC36V4450A-51 539-375-MGFC36V4450A-51 Mitsubishi Electric : : - : - 1 : -

Discrete Semiconductor Products

Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: RD35HUF2,RD70HVF1C-501,RD02MUS1B,MGFS45V2527A,RD04HMS2.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 114 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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Discrete Semiconductor Products