Mitsubishi Electric MGF1102 Specialized Transistors
MGF1102
1645-375-MGF1102
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, GD-2, 4 PIN
Min. : 1
Mult. : 1
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MGF1102
Mitsubishi MGF1102 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | DISK BUTTON, O-CRDB-F4 | |
| Drain Current-Max (ID) | 0.08 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | DISK BUTTON | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | O-CRDB-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | C BAND | |
| Power Dissipation Ambient-Max | 0.3 W | |
| Power Gain-Min (Gp) | 11 dB |
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