Transistors - FETs, MOSFETs - RF Products For Sale - PDF - Discrete Semiconductor Products -Page7

Discrete Semiconductor Products
Transistors - FETs, MOSFETs - RF

						Factory Lead Time	Lifecycle Status	Mount	Package / Case	Surface Mount	Number of Pins	Weight	Transistor Element Material	Breakdown Voltage / V	Mfr	Number of Elements	Operating Temperature (Max.)	Package	Product Status	Usage Level	Voltage Rated	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Voltage - Rated DC	Current Rating (Amps)	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Current Rating	Frequency	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Configuration	Element Configuration	Nominal Supply Current	Operating Mode	Power Dissipation	Case Connection	Current - Test	Transistor Application	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Transistor Type	Continuous Drain Current (ID)	JEDEC-95 Code	Gate to Source Voltage (Vgs)	Gain	Max Output Power	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Input Capacitance	DS Breakdown Voltage-Min	Power - Output	FET Technology	Power Dissipation-Max (Abs)	Noise Figure	Voltage - Test	Feedback Cap-Max (Crss)	Source Url Status Check Date	Test Voltage	Min Breakdown Voltage	Power Gain-Min (Gp)	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free
	Mfr. MRF7S27130HSR3 Twicea 17568-368-MRF7S27130HSR3	NXP USA Inc.	Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R		Min.:1 Mult.:1	10 Weeks	-	-	NI-780S	-	-	-	-	-	-	-	-	-	-	-	65V	Tape & Reel (TR)	2009	-	-	-	Obsolete	Not Applicable	-	-	EAR99	-	-	-	-	8541.29.00.75	-	-	-	-	-	-	-	2.7GHz	-	MRF7S27130	-	-	-	-	-	-	-	-	-	1.5A	-	-	-	LDMOS	-	-	-	16.5dB	-	-	-	-	-	23W	-	-	-	28V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRF7S27130HSR3 17568-368-MRF7S27130HSR3 NXP USA Inc. : : - : - 1 : -
	Mfr. SD2932W Twicea 761-368-SD2932W	STMicroelectronics	Trans RF MOSFET N-CH 125V 40A 5-Pin Case M-244 Tube	2510	Min.:1 Mult.:1	32 Weeks	-	Screw	M244	-	5	-	-	-	-	2	-	-	-	-	-	Tray	-	-	-	-	Active	1 (Unlimited)	-	-	EAR99	-	150°C	-65°C	-	-	-	-	500W	-	-	-	40A	175MHz	-	SD2932	-	-	-	-	Dual	-	-	500W	-	500mA	-	125V	-	N-Channel	40A	-	20V	16dB	-	-	125V	-	-	300W	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	-	-	125V	-	-	-	-	No	-	ROHS3 Compliant	Lead Free
SD2932W 761-368-SD2932W STMicroelectronics : : - : 2510 1 : -
	Mfr. MRFE6VP5600HR6 Twicea 17568-368-MRFE6VP5600HR6	NXP USA Inc.	RF MOSFET Transistors VHV6 600W 50V NI1230H	807	Min.:1 Mult.:1	10 Weeks	-	-	NI-1230-4H	YES	-	-	SILICON	-	-	2	225°C	-	-	Military grade	130V	Tape & Reel (TR)	2006	-	-	-	Active	Not Applicable	4	-	EAR99	-	-	-	-	8541.29.00.75	-	-	-	-	FLAT	260	-	230MHz	40	MRFE6VP5600	-	R-CDFM-F4	Not Qualified	COMMON SOURCE, 2 ELEMENTS	-	-	ENHANCEMENT MODE	-	SOURCE	100mA	AMPLIFIER	-	N-CHANNEL	LDMOS (Dual)	-	-	-	25dB	-	-	-	-	130V	600W	METAL-OXIDE SEMICONDUCTOR	1670W	-	50V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRFE6VP5600HR6 17568-368-MRFE6VP5600HR6 NXP USA Inc. : : - : 807 1 : -
	Mfr. ATF-38143-TR1G Twicea 107-368-ATF-38143-TR1G	Broadcom Limited	Trans JFET N-CH 4.5V 145mA pHEMT 4-Pin(3 Tab) SOT-343 T/R		Min.:1 Mult.:1	6 Weeks	-	Surface Mount	SC-82A, SOT-343	-	4	-	-	-	-	1	-	-	-	-	-	Tape & Reel (TR)	2012	-	e3	-	Obsolete	1 (Unlimited)	4	-	EAR99	Matte Tin (Sn)	160°C	-65°C	-	-	4.5V	-	580mW	DUAL	GULL WING	260	145mA	2GHz	NOT SPECIFIED	-	-	-	Not Qualified	SINGLE	-	-	DEPLETION MODE	-	SOURCE	10mA	AMPLIFIER	4.5V	N-CHANNEL	pHEMT FET	145mA	-	-4V	16dB	-	-	-	-	-	12dBm	HIGH ELECTRON MOBILITY	-	0.4dB	2V	-	-	-	-	-	-	-	-	-	-	RoHS Compliant	Lead Free
ATF-38143-TR1G 107-368-ATF-38143-TR1G Broadcom Limited : : - : - 1 : -
	Mfr. J309 Twicea 598-368-J309	ON Semiconductor	IC SWITCH RF N-CH 25V 10MA TO-92	1080	Min.:1 Mult.:1	-	LAST SHIPMENTS (Last Updated: 1 week ago)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	-	3	201mg	-	-25V	-	1	-	-	-	-	-	Bulk	-	-	e0	no	Obsolete	1 (Unlimited)	3	Through Hole	-	Tin/Lead (Sn/Pb)	150°C	-55°C	-	8541.21.00.75	25V	-	625mW	BOTTOM	-	240	10mA	100MHz	30	J309	3	-	-	-	Single	-	DEPLETION MODE	350mW	-	10mA	AMPLIFIER	25V	-	N-Channel JFET	30mA	-	-25V	16dB	-	-	25V	-	-	-	JUNCTION	-	3 dB	10V	2.5 pF	-	-	-	-	5.33mm	5.2mm	4.19mm	No	No SVHC	Non-RoHS Compliant	Lead Free
J309 598-368-J309 ON Semiconductor : : - : 1080 1 : -
	Mfr. MRFE6VP61K25HR5 Twicea 17568-368-MRFE6VP61K25HR5	NXP USA Inc.	RF MOSFET Transistors VHV6 1.25KW ISM NI1230H	567	Min.:1 Mult.:1	10 Weeks	-	-	NI-1230	-	-	-	-	-	-	-	225°C	-	-	Military grade	133V	Tape & Reel (TR)	2006	-	-	-	Active	Not Applicable	-	-	EAR99	-	-	-	-	8541.29.00.75	-	-	-	-	-	260	-	230MHz	40	MRFE6VP61K25	-	-	-	-	-	-	-	-	-	100mA	-	-	N-CHANNEL	LDMOS (Dual)	-	-	-	24dB	-	-	-	-	-	1250W	METAL-OXIDE SEMICONDUCTOR	1300W	-	50V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRFE6VP61K25HR5 17568-368-MRFE6VP61K25HR5 NXP USA Inc. : : - : 567 1 : -
	Mfr. ATF-551M4-BLK Twicea 107-368-ATF-551M4-BLK	Broadcom Limited	Trans JFET N-CH 5V 100mA GaAs pHEMT 4-Pin Mini-PAK Bag		Min.:1 Mult.:1	7 Weeks	-	Surface Mount	0505 (1412 Metric)	-	4	-	-	-	-	1	-	-	-	-	-	Bulk	2003	-	e4	-	Obsolete	1 (Unlimited)	4	-	EAR99	Gold (Au)	150°C	-65°C	-	-	2.7V	-	270mW	BOTTOM	-	260	100mA	2GHz	-	ATF-551M4	-	-	-	SINGLE	-	10mA	DEPLETION MODE	270mW	-	-	AMPLIFIER	2.7V	N-CHANNEL	pHEMT FET	100mA	-	1V	17.5dB	-	0.1A	-	-	5V	14.6dBm	HIGH ELECTRON MOBILITY	-	0.5dB	-	-	-	-	-	-	-	-	-	No	-	RoHS Compliant	Lead Free
ATF-551M4-BLK 107-368-ATF-551M4-BLK Broadcom Limited : : - : - 1 : -
	Mfr. MRF8P9300HSR6 Twicea 17568-368-MRF8P9300HSR6	NXP USA Inc.	FET RF 2CH 70V 960MHZ NI-1230HS	600	Min.:1 Mult.:1	10 Weeks	-	-	NI-1230S	YES	-	-	SILICON	-	-	2	225°C	-	-	-	70V	Tape & Reel (TR)	2006	-	-	-	Last Time Buy	Not Applicable	4	-	EAR99	-	-	-	-	8541.29.00.75	-	-	-	-	FLAT	260	-	960MHz	40	MRF8P9300	-	R-CDFP-F4	Not Qualified	COMMON SOURCE, 2 ELEMENTS	-	-	ENHANCEMENT MODE	-	SOURCE	2.4A	AMPLIFIER	-	N-CHANNEL	LDMOS (Dual)	-	-	-	19.4dB	-	-	-	-	70V	100W	METAL-OXIDE SEMICONDUCTOR	-	-	28V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRF8P9300HSR6 17568-368-MRF8P9300HSR6 NXP USA Inc. : : - : 600 1 : -
	Mfr. A2T23H300-24SR6 Twicea 17568-368-A2T23H300-24SR6	NXP USA Inc.	RF MOSFET Transistors BL RF	2126	Min.:1 Mult.:1	10 Weeks	-	-	NI-1230-4LS2L	-	-	-	-	-	-	-	-	-	-	-	65V	Tape & Reel (TR)	2006	-	-	-	Active	Not Applicable	-	-	EAR99	-	-	-	-	8541.29.00.75	-	-	-	-	-	NOT SPECIFIED	-	2.3GHz	NOT SPECIFIED	-	-	-	-	-	-	-	-	-	-	750mA	-	-	-	LDMOS (Dual)	-	-	-	14.9dB	-	-	-	-	-	66W	-	-	-	28V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
A2T23H300-24SR6 17568-368-A2T23H300-24SR6 NXP USA Inc. : : - : 2126 1 : -
	Mfr. PD55003S-E Twicea 761-368-PD55003S-E	STMicroelectronics	FET RF 40V 500MHZ PWRSO10	200	Min.:1 Mult.:1	25 Weeks	-	Surface Mount	PowerSO-10 Exposed Bottom Pad	-	3	-	-	-	-	1	-	-	-	-	-	Tube	-	-	e3	-	Active	3 (168 Hours)	2	-	EAR99	Matte Tin (Sn) - annealed	165°C	-65°C	HIGH RELIABILITY	-	40V	-	31.7W	DUAL	FLAT	-	2.5A	500MHz	-	PD55003	10	R-PDSO-F2	-	-	Single	-	ENHANCEMENT MODE	31.7W	SOURCE	50mA	AMPLIFIER	40V	N-CHANNEL	LDMOS	2.5A	-	20V	17dB	3W	-	40V	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	12.5V	-	-	-	-	-	-	-	-	No	-	ROHS3 Compliant	Lead Free
PD55003S-E 761-368-PD55003S-E STMicroelectronics : : - : 200 1 : -
	Mfr. MRF6V2150NBR1 Twicea 17568-368-MRF6V2150NBR1	NXP USA Inc.	RF MOSFET, N CHANNEL, 110V, TO-272		Min.:1 Mult.:1	10 Weeks	-	-	TO-272BB	YES	-	-	SILICON	-	-	1	225°C	-	-	-	110V	Tape & Reel (TR)	2006	-	e3	-	Not For New Designs	3 (168 Hours)	4	-	EAR99	Matte Tin (Sn)	-	-	-	8541.29.00.75	-	-	-	DUAL	FLAT	260	-	220MHz	40	MRF6V2150	-	R-PDFM-F4	Not Qualified	SINGLE	-	-	ENHANCEMENT MODE	-	SOURCE	450mA	AMPLIFIER	-	N-CHANNEL	LDMOS	-	-	-	25dB	-	-	-	-	110V	150W	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRF6V2150NBR1 17568-368-MRF6V2150NBR1 NXP USA Inc. : : - : - 1 : -
	Mfr. PD85035-E Twicea 761-368-PD85035-E	STMicroelectronics	Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) Tube	500	Min.:1 Mult.:1	25 Weeks	ACTIVE (Last Updated: 8 months ago)	Surface Mount	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	-	3	-	-	-	-	1	-	-	-	-	-	Tube	-	-	e3	-	Active	3 (168 Hours)	2	-	EAR99	Matte Tin (Sn)	165°C	-65°C	HIGH RELIABILITY	-	-	-	95W	DUAL	GULL WING	250	8A	870MHz	30	PD85035	10	R-PDSO-G2	-	-	Single	-	ENHANCEMENT MODE	95W	SOURCE	350mA	AMPLIFIER	-	N-CHANNEL	LDMOS	8A	-	15V	17dB	40W	8A	40V	-	-	15W	METAL-OXIDE SEMICONDUCTOR	-	-	13.6V	-	-	-	40V	-	-	-	-	No	-	ROHS3 Compliant	Lead Free
PD85035-E 761-368-PD85035-E STMicroelectronics : : - : 500 1 : -
	Mfr. SD2931-10W Twicea 761-368-SD2931-10W	STMicroelectronics	Trans RF MOSFET N-CH 125V 20A 4-Pin Case M-174 Tray	69	Min.:1 Mult.:1	32 Weeks	-	Screw	M174	-	4	-	-	-	-	1	-	-	-	-	-	Tray	-	-	-	-	Active	3 (168 Hours)	4	-	EAR99	-	150°C	-65°C	-	-	-	-	389W	RADIAL	FLAT	-	20A	175MHz	-	SD2931	-	-	-	-	Single	-	ENHANCEMENT MODE	389W	-	250mA	-	125V	-	N-Channel	20A	-	20V	15dB	-	-	125V	-	-	150W	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	-	-	-	-	-	-	-	No	No SVHC	ROHS3 Compliant	Lead Free
SD2931-10W 761-368-SD2931-10W STMicroelectronics : : - : 69 1 : -
	Mfr. MCH6644-TL-E Twicea 598-368-MCH6644-TL-E	onsemi	PCH NCH 4V DRIVE SERIES		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	onsemi	-	-	Bulk	Active	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCH6644-TL-E 598-368-MCH6644-TL-E onsemi : : - : - 1 : -
	Mfr. BF861B,215 Twicea 17568-368-BF861B,215	NXP USA Inc.	JFET N-CHAN 25V SOT-23		Min.:1 Mult.:1	8 Weeks	-	-	TO-236-3, SC-59, SOT-23-3	YES	-	-	SILICON	-	-	1	150°C	-	-	-	25V	Tape & Reel (TR)	2001	-	e3	-	Not For New Designs	1 (Unlimited)	3	-	EAR99	Matte Tin (Sn)	-	-	LOW NOISE	8541.21.00.95	-	15mA	-	DUAL	GULL WING	260	-	-	NOT SPECIFIED	BF861	3	R-PDSO-G3	Not Qualified	SINGLE	-	-	DEPLETION MODE	-	-	-	AMPLIFIER	-	-	N-Channel JFET	-	TO-236AB	-	-	-	-	-	-	25V	-	JUNCTION	0.25W	-	-	2.7 pF	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
BF861B,215 17568-368-BF861B,215 NXP USA Inc. : : - : - 1 : -
	Mfr. CPH3303-TL-E Twicea 598-368-CPH3303-TL-E	onsemi	PCH 2.5V DRIVE SERIES	14434	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	onsemi	-	-	Bulk	Active	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CPH3303-TL-E 598-368-CPH3303-TL-E onsemi : : - : 14434 1 : -
	Mfr. SCH2816-TL-E Twicea 598-368-SCH2816-TL-E	onsemi	NCH SBD 4V DRIVE SERIES	6000	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	onsemi	-	-	Bulk	Active	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCH2816-TL-E 598-368-SCH2816-TL-E onsemi : : - : 6000 1 : -
	Mfr. MRF6V12250HR5 Twicea 17568-368-MRF6V12250HR5	NXP USA Inc.	Trans RF MOSFET N-CH 100V 2-Pin Case 465-06 T/R	561	Min.:1 Mult.:1	10 Weeks	-	-	SOT-957A	YES	-	-	SILICON	-	-	1	225°C	-	-	Military grade	100V	Tape & Reel (TR)	2010	-	-	-	Active	Not Applicable	2	-	EAR99	-	-	-	-	8541.29.00.75	-	-	-	DUAL	FLAT	260	-	1.03GHz	40	MRF6V12250	-	R-CDFM-F2	-	SINGLE	-	-	ENHANCEMENT MODE	-	SOURCE	100mA	AMPLIFIER	-	N-CHANNEL	LDMOS	-	-	-	20.3dB	-	-	-	-	110V	275W	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRF6V12250HR5 17568-368-MRF6V12250HR5 NXP USA Inc. : : - : 561 1 : -
	Mfr. 2N5486 Twicea 598-368-2N5486	ON Semiconductor	IC AMP RF N-CHAN 25V 10MA TO-92	2880	Min.:1 Mult.:1	-	LAST SHIPMENTS (Last Updated: 2 days ago)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	-	3	201mg	-	-25V	-	1	-	-	-	-	-	Bulk	2006	-	e0	no	Obsolete	1 (Unlimited)	3	Through Hole	EAR99	Tin/Lead (Sn/Pb)	150°C	-65°C	-	-	25V	30mA	350mW	BOTTOM	-	240	10mA	400MHz	30	2N5486	3	-	-	-	Single	-	DEPLETION MODE	350mW	-	-	AMPLIFIER	25V	-	N-Channel JFET	20mA	-	25V	-	-	-	-	5pF	-	-	JUNCTION	-	4 dB	-	1 pF	-	15V	-	10dB	5.33mm	5.2mm	4.19mm	No	No SVHC	Non-RoHS Compliant	Lead Free
2N5486 598-368-2N5486 ON Semiconductor : : - : 2880 1 : -
	Mfr. BF1108,215 Twicea 17568-368-BF1108,215	NXP USA Inc.	IC RF SWITCH SOT143B	11275	Min.:1 Mult.:1	13 Weeks	-	-	TO-253-4, TO-253AA	-	-	-	-	-	-	-	-	-	-	Military grade	3V	Tape & Reel (TR)	2008	-	-	-	Obsolete	1 (Unlimited)	-	-	-	-	-	-	-	-	-	10mA	-	-	-	-	-	-	-	BF1108	4	-	-	-	-	-	-	-	-	-	-	-	-	N-Channel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2013-06-14 00:00:00	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
BF1108,215 17568-368-BF1108,215 NXP USA Inc. : : - : 11275 1 : -

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - RF definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - RF Product Listing: MRF7S27130HSR3,SD2932W,MRFE6VP5600HR6,ATF-38143-TR1G,J309.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - FETs, MOSFETs - RF has 5357 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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