Transistors - FETs, MOSFETs - RF Products For Sale - PDF - Discrete Semiconductor Products -Page8

Discrete Semiconductor Products
Transistors - FETs, MOSFETs - RF

							Factory Lead Time	Lifecycle Status	Contact Plating	Mount	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Number of Terminals	Transistor Element Material	Base Product Number	Channel Mode	Collector-Emitter Breakdown Voltage	Continuous Drain Current Id	Drain Current-Max (ID)	Factory Pack QuantityFactory Pack Quantity	Fall Time	Forward Transconductance - Min	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting Styles	Number of Elements	Operating Temperature (Max.)	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Shape	Package Style	Part Life Cycle Code	Pd - Power Dissipation	Product Status	Rds On - Drain-Source Resistance	Risk Rank	RoHS	Rohs Code	Transistor Polarity	Turn-off Time-Max (toff)	Turn-on Time-Max (ton)	Unit Weight	Usage Level	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Voltage Rated	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Voltage - Rated DC	Current Rating (Amps)	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Frequency	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Operating Frequency	Configuration	Element Configuration	Operating Mode	Power Dissipation	Case Connection	Output Power	Current - Test	Transistor Application	Rise Time	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Transistor Type	Operating Temperature Range	Continuous Drain Current (ID)	JEDEC-95 Code	Gate to Source Voltage (Vgs)	Gain	Max Output Power	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Dual Supply Voltage	Input Capacitance	DS Breakdown Voltage-Min	Channel Type	Power - Output	FET Technology	Power Dissipation-Max (Abs)	Noise Figure	Nominal Vgs	Voltage - Test	Feedback Cap-Max (Crss)	Highest Frequency Band	Min Breakdown Voltage	Power Gain-Min (Gp)	Power Gain	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free

						Factory Lead Time	Lifecycle Status	Contact Plating	Mount	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Number of Terminals	Transistor Element Material	Base Product Number	Channel Mode	Collector-Emitter Breakdown Voltage	Continuous Drain Current Id	Drain Current-Max (ID)	Factory Pack QuantityFactory Pack Quantity	Fall Time	Forward Transconductance - Min	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting Styles	Number of Elements	Operating Temperature (Max.)	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Shape	Package Style	Part Life Cycle Code	Pd - Power Dissipation	Product Status	Rds On - Drain-Source Resistance	Risk Rank	RoHS	Rohs Code	Transistor Polarity	Turn-off Time-Max (toff)	Turn-on Time-Max (ton)	Unit Weight	Usage Level	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Voltage Rated	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Voltage - Rated DC	Current Rating (Amps)	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Frequency	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Operating Frequency	Configuration	Element Configuration	Operating Mode	Power Dissipation	Case Connection	Output Power	Current - Test	Transistor Application	Rise Time	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Transistor Type	Operating Temperature Range	Continuous Drain Current (ID)	JEDEC-95 Code	Gate to Source Voltage (Vgs)	Gain	Max Output Power	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Dual Supply Voltage	Input Capacitance	DS Breakdown Voltage-Min	Channel Type	Power - Output	FET Technology	Power Dissipation-Max (Abs)	Noise Figure	Nominal Vgs	Voltage - Test	Feedback Cap-Max (Crss)	Highest Frequency Band	Min Breakdown Voltage	Power Gain-Min (Gp)	Power Gain	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free
	Mfr. MRF1535NT1 Twicea 17568-368-MRF1535NT1	NXP USA Inc.	NXP MRF1535NT1 MOSFET, RF, N CHANNEL, 40V, TO-272	5000	Min.:1 Mult.:1	10 Weeks	-	-	-	TO-272AA	YES	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	200°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40V	Tape & Reel (TR)	2006	-	e3	-	Not For New Designs	3 (168 Hours)	6	-	EAR99	-	Tin (Sn)	-	-	-	8541.29.00.75	-	6A	-	DUAL	C BEND	260	-	-	520MHz	40	MRF1535	-	R-PDFM-C6	Not Qualified	-	SINGLE	-	ENHANCEMENT MODE	-	SOURCE	-	500mA	AMPLIFIER	-	-	N-CHANNEL	LDMOS	-	-	-	-	13.5dB	-	6A	-	-	-	40V	-	35W	METAL-OXIDE SEMICONDUCTOR	135W	-	-	12.5V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRF1535NT1 17568-368-MRF1535NT1 NXP USA Inc. : : - : 5000 1 : -
	Mfr. EC4303C-TL Twicea 598-368-EC4303C-TL	onsemi	PCH 4V DRIVE SERIES	24032	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	Bulk	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EC4303C-TL 598-368-EC4303C-TL onsemi : : - : 24032 1 : -
	Mfr. PD85025-E Twicea 761-368-PD85025-E	STMicroelectronics	FET RF 40V 870MHZ		Min.:1 Mult.:1	25 Weeks	ACTIVE (Last Updated: 8 months ago)	-	Surface Mount	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tube	-	-	e3	-	Active	3 (168 Hours)	2	-	EAR99	-	Matte Tin (Sn)	165°C	-65°C	-	-	-	-	79W	DUAL	GULL WING	250	not_compliant	7A	870MHz	30	PD85025	10	R-PDSO-G2	Not Qualified	-	-	Single	ENHANCEMENT MODE	79W	SOURCE	-	300mA	AMPLIFIER	-	40V	N-CHANNEL	LDMOS	-	7A	-	15V	17.3dB	30W	7A	40V	-	-	-	-	10W	METAL-OXIDE SEMICONDUCTOR	-	-	-	13.6V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
PD85025-E 761-368-PD85025-E STMicroelectronics : : - : - 1 : -
	Mfr. VRF151G Twicea 536-368-VRF151G	Microchip Technology	RF MOSFET Transistors FG, MOSFET, ARF, RoHS, M208View in Development Tools Selector	2689	Min.:1 Mult.:1	-	-	-	-	SOE-4	-	-	M208	-	-	VRF151	-	-	36	-	1	-	-	36 A	-	-	+ 150 C	Microchip Technology	- 65 C	SMD/SMT	-	-	-	-	Box	-	-	-	-	-	Active	-	-	Details	-	N-Channel	-	-	0.690329 oz	-	170 V	-	-	170 V	-	-	-	-	-	-	-	-	-	-	RF Power MOSFET	-	-	-	-	-	-	1mA	-	-	-	-	-	-	175MHz	-	-	-	-	-	175 MHz	2 N-Channel (Dual) Common Source	-	-	500	-	300 W	500 mA	-	-	-	-	-	-	-	-	-	16dB	-	-	-	-	-	-	N	300W	-	-	-	-	50 V	-	-	-	-	-	-	-	-	-	-	-	-
VRF151G 536-368-VRF151G Microchip Technology : : - : 2689 1 : -
	Mfr. SD57060-01 Twicea 761-368-SD57060-01	STMicroelectronics	Trans RF MOSFET N-CH 65V 7A 3-Pin Case M-250	467	Min.:1 Mult.:1	-	NRND (Last Updated: 8 months ago)	-	Surface Mount	M250	-	250	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	Obsolete	1 (Unlimited)	2	-	EAR99	-	-	200°C	-65°C	-	-	65V	-	108W	DUAL	FLAT	NOT SPECIFIED	-	7A	945MHz	NOT SPECIFIED	SD57060	2	R-PDFP-F2	Not Qualified	-	-	Single	ENHANCEMENT MODE	108W	SOURCE	-	100mA	AMPLIFIER	-	65V	N-CHANNEL	LDMOS	-	7A	-	20V	15dB	60W	7A	65V	-	88pF	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	28V	-	-	65V	-	-	-	-	-	-	-	ROHS3 Compliant	Contains Lead
SD57060-01 761-368-SD57060-01 STMicroelectronics : : - : 467 1 : -
	Mfr. MCH6413-TL-E Twicea 598-368-MCH6413-TL-E	onsemi	NCH 1.8V DRIVE SERIES	30032	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	Bulk	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCH6413-TL-E 598-368-MCH6413-TL-E onsemi : : - : 30032 1 : -
	Mfr. 2SJ499-TL-E Twicea 598-368-2SJ499-TL-E	onsemi	PCH 4V DRIVE SERIES	3822	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	Bulk	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ499-TL-E 598-368-2SJ499-TL-E onsemi : : - : 3822 1 : -
	Mfr. 2SK3411-TL-E Twicea 598-368-2SK3411-TL-E	onsemi	NCH 4V DRIVE SERIES		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	Bulk	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3411-TL-E 598-368-2SK3411-TL-E onsemi : : - : - 1 : -
	Mfr. ATF-34143-TR1G Twicea 107-368-ATF-34143-TR1G	Broadcom Limited	BROADCOM LIMITED ATF-34143-TR1G RF FET Transistor, 5.5 V, 65 mA, 725 mW, 450 MHz, 10 GHz, SOT-343		Min.:1 Mult.:1	6 Weeks	-	Tin	Surface Mount	SC-82A, SOT-343	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	2005	-	e3	-	Obsolete	1 (Unlimited)	4	-	EAR99	-	-	160°C	-65°C	-	-	5.5V	-	725mW	DUAL	GULL WING	260	-	145mA	2GHz	-	ATF-34143	-	-	-	-	SINGLE	-	DEPLETION MODE	725mW	SOURCE	-	60mA	AMPLIFIER	-	5.5V	N-CHANNEL	pHEMT FET	-	65mA	-	-5V	17.5dB	-	-	-	-	-	-	-	20dBm	HIGH ELECTRON MOBILITY	-	0.5dB	-	4V	-	-	-	-	-	-	-	-	No	No SVHC	RoHS Compliant	Lead Free
ATF-34143-TR1G 107-368-ATF-34143-TR1G Broadcom Limited : : - : - 1 : -
	Mfr. ARF463AP1G Twicea 69-368-ARF463AP1G	Atmel (Microchip Technology)	RF MOSFET Transistors FG, MOSFET, 500V, TO-247, RoHSView in Development Tools Selector		Min.:1 Mult.:1	-	-	-	-	TO-247-3	-	-	-	-	-	-	Enhancement	-	-	-	1	4.2 ns	2 mS	9 A	-	-	+ 150 C	-	- 55 C	Through Hole	-	-	-	-	-	-	-	-	-	180 W	-	-	-	Details	-	N-Channel	-	-	1.340411 oz	-	500 V	30 V	5 V	-	Tube	-	-	-	-	-	-	-	-	-	RF Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	100 MHz	-	-	-	-	-	100 W	-	-	4.3 ns	-	-	-	- 55 C to + 150 C	-	-	-	15 dB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ARF463AP1G 69-368-ARF463AP1G Atmel (Microchip Technology) : : - : - 1 : -
	Mfr. ARF463AG Twicea 536-368-ARF463AG	Microchip Technology	RF MOSFET Transistors FG, MOSFET, 500V, TO-247, RoHSView in Development Tools Selector	57	Min.:1 Mult.:1	-	-	-	-	TO-247-3	NO	-	TO-247	3	SILICON	ARF463	Enhancement	-	9	9 A	1	4 ns	4 mS	9 A	MICROSEMI CORP	ARF463AG	+ 150 C	Microchip Technology	- 55 C	Through Hole	1	-	150 °C	-55 °C	Tube	PLASTIC/EPOXY	RECTANGULAR	FLANGE MOUNT	Active	180 W	Active	-	1.29	Details	Yes	N-Channel	28 ns	18 ns	1.340411 oz	-	500 V	30 V	5 V	500 V	Tube	-	-	-	No	-	-	-	-	EAR99	RF Power MOSFET	-	-	-	-	-	-	9A	-	SINGLE	THROUGH-HOLE	-	compliant	-	81.36MHz	-	-	-	R-PSFM-T3	-	100 MHz	N-Channel	-	ENHANCEMENT MODE	180	SOURCE	100 W	50 mA	AMPLIFIER	4.1 ns	-	N-CHANNEL	-	- 55 C to + 150 C	-	TO-247	-	15 dB	-	9 A	-	-	-	500 V	N	100W	METAL-OXIDE SEMICONDUCTOR	-	-	-	125 V	12 pF	VERY HIGH FREQUENCY BAND	-	13 dB	-	-	-	-	-	-	-	-
ARF463AG 536-368-ARF463AG Microchip Technology : : - : 57 1 : -
	Mfr. AFM907NT1 Twicea 17568-368-AFM907NT1	NXP USA Inc.	RF MOSFET LDMOS 7.5V 10-DFN	2	Min.:1 Mult.:1	14 Weeks	-	-	-	16-VDFN Exposed Pad	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive grade	-	-	-	30V	Tape & Reel (TR)	2006	-	-	-	Active	1 (Unlimited)	-	-	EAR99	-	-	-	-	-	-	-	10μA	-	-	-	NOT SPECIFIED	-	-	136MHz~941MHz	NOT SPECIFIED	-	-	-	-	-	-	-	-	-	-	-	100mA	-	-	-	-	LDMOS	-	-	-	-	-	-	-	-	-	-	-	-	8.4W	-	-	-	-	10.8V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
AFM907NT1 17568-368-AFM907NT1 NXP USA Inc. : : - : 2 1 : -
	Mfr. MRFE6VP5600HR5 Twicea 17568-368-MRFE6VP5600HR5	NXP USA Inc.	FET RF 2CH 130V 230MHZ NI1230	2311	Min.:1 Mult.:1	10 Weeks	-	-	-	NI-1230-4H	YES	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	225°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	130V	Tape & Reel (TR)	2006	-	-	-	Active	Not Applicable	4	-	EAR99	-	-	-	-	-	8541.29.00.75	-	-	-	-	FLAT	260	-	-	230MHz	40	MRFE6VP5600	-	R-CDFM-F4	Not Qualified	-	COMMON SOURCE, 2 ELEMENTS	-	ENHANCEMENT MODE	-	SOURCE	-	100mA	AMPLIFIER	-	-	N-CHANNEL	LDMOS (Dual)	-	-	-	-	25dB	-	-	-	-	-	130V	-	600W	METAL-OXIDE SEMICONDUCTOR	1670W	-	-	50V	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRFE6VP5600HR5 17568-368-MRFE6VP5600HR5 NXP USA Inc. : : - : 2311 1 : -
	Mfr. MCH6307-G-TL-E Twicea 598-368-MCH6307-G-TL-E	onsemi	PCH 1.8V DRIVE SERIES	1000032	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	Bulk	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCH6307-G-TL-E 598-368-MCH6307-G-TL-E onsemi : : - : 1000032 1 : -
	Mfr. SCH2817-TL-E Twicea 598-368-SCH2817-TL-E	onsemi	NCH SBD 1.8V DRIVE SERIES	40032	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	Bulk	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCH2817-TL-E 598-368-SCH2817-TL-E onsemi : : - : 40032 1 : -
	Mfr. ATF-36163-BLKG Twicea 107-368-ATF-36163-BLKG	Broadcom Limited	AVAGO TECHNOLOGIES ATF-36163-BLKG RF FET Transistor, High Linearity, 3 V, 40 mA, 180 mW, 1.5 GHz, 18 GHz, SOT-363		Min.:1 Mult.:1	6 Weeks	-	Tin	Surface Mount	6-TSSOP, SC-88, SOT-363	-	6	-	-	-	-	-	-3.5V	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	2005	-	e3	-	Obsolete	1 (Unlimited)	6	SMD/SMT	EAR99	-	-	150°C	-65°C	LOW NOISE	8541.21.00.75	3V	-	180mW	DUAL	GULL WING	260	-	40mA	4GHz	NOT SPECIFIED	-	-	-	Not Qualified	-	SINGLE	-	DEPLETION MODE	180mW	-	-	15mA	AMPLIFIER	-	3V	N-CHANNEL	pHEMT FET	-	40mA	-	-3V	15.8dB	-	0.04A	-	3V	-	3V	-	5dBm	HIGH ELECTRON MOBILITY	-	0.6dB	-3 V	2V	-	-	-	-	-	-	-	-	-	No SVHC	RoHS Compliant	Lead Free
ATF-36163-BLKG 107-368-ATF-36163-BLKG Broadcom Limited : : - : - 1 : -
	Mfr. ATF-511P8-BLK Twicea 107-368-ATF-511P8-BLK	Broadcom Limited	AVAGO TECHNOLOGIES ATF-511P8-BLK RF FET Transistor, 7 V, 1 A, 3 W, 50 MHz, 6 GHz, LPCC		Min.:1 Mult.:1	6 Weeks	-	Tin	Surface Mount	8-WFDFN Exposed Pad	-	8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	2012	-	e3	-	Obsolete	1 (Unlimited)	8	SMD/SMT	EAR99	-	-	150°C	-65°C	LOW NOISE	-	4.5V	-	3W	DUAL	NO LEAD	260	-	1A	2GHz	NOT SPECIFIED	-	-	-	Not Qualified	-	SINGLE	-	ENHANCEMENT MODE	3W	SOURCE	-	200mA	AMPLIFIER	-	4.5V	N-CHANNEL	E-pHEMT	-	1A	-	1V	14.8dB	-	1A	-	4.5V	-	7V	-	30dBm	HIGH ELECTRON MOBILITY	-	1.4dB	280 mV	-	-	-	-	-	-	800μm	2.1mm	2.1mm	-	No SVHC	RoHS Compliant	Lead Free
ATF-511P8-BLK 107-368-ATF-511P8-BLK Broadcom Limited : : - : - 1 : -
	Mfr. SD57045-01 Twicea 761-368-SD57045-01	STMicroelectronics	FET RF 65V 945MHZ M250	512	Min.:1 Mult.:1	32 Weeks	ACTIVE (Last Updated: 8 months ago)	-	Surface Mount	M250	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	Active	1 (Unlimited)	2	-	EAR99	-	-	200°C	-65°C	-	-	65V	-	93W	DUAL	FLAT	-	-	5A	945MHz	-	SD57045	2	R-PDFP-F2	-	-	-	Single	ENHANCEMENT MODE	93W	SOURCE	-	250mA	AMPLIFIER	-	65V	N-CHANNEL	LDMOS	-	5A	-	20V	-	45W	5A	65V	-	80pF	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	28V	-	-	-	-	15dB	-	-	-	No	-	ROHS3 Compliant	Lead Free
SD57045-01 761-368-SD57045-01 STMicroelectronics : : - : 512 1 : -
	Mfr. MRF6S27015NR1 Twicea 17568-368-MRF6S27015NR1	NXP USA Inc.	Trans RF MOSFET N-CH 68V 3-Pin TO-270 T/R		Min.:1 Mult.:1	-	-	-	-	TO-270AA	YES	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	225°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	68V	Tape & Reel (TR)	2005	-	e3	-	Obsolete	3 (168 Hours)	2	-	EAR99	-	Matte Tin (Sn)	-	-	-	8541.29.00.75	-	-	-	DUAL	FLAT	260	-	-	2.6GHz	40	-	-	R-PDFM-F2	Not Qualified	-	SINGLE	-	ENHANCEMENT MODE	-	SOURCE	-	160mA	AMPLIFIER	-	-	N-CHANNEL	LDMOS	-	-	-	-	14dB	-	-	-	-	-	68V	-	3W	METAL-OXIDE SEMICONDUCTOR	-	-	-	28V	-	-	-	-	-	-	-	-	-	-	Non-RoHS Compliant	-
MRF6S27015NR1 17568-368-MRF6S27015NR1 NXP USA Inc. : : - : - 1 : -
	Mfr. CPH6302-TL-E Twicea 598-368-CPH6302-TL-E	onsemi	PCH 4V DRIVE SERIES	5440	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	Bulk	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CPH6302-TL-E 598-368-CPH6302-TL-E onsemi : : - : 5440 1 : -

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - RF definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - RF Product Listing: MRF1535NT1,EC4303C-TL,PD85025-E,VRF151G,SD57060-01.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - FETs, MOSFETs - RF has 5357 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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Discrete Semiconductor Products