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MRF6V2150NBR1

NXP  MRF6V2150NBR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 10 Weeks
Package / Case TO-272BB
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Max.) 225°C
Voltage Rated 110V
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 220MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF6V2150
JESD-30 Code R-PDFM-F4
Qualification Status Not Qualified
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 450mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 25dB
DS Breakdown Voltage-Min 110V
Power - Output 150W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant

MRF6V2150NBR1

Download datasheets and manufacturer documentation for   MRF6V2150NBR1

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