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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Transition Frequency-Nom (fT) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Power Dissipation Ambient-Max |
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![]() | Mfr. Part #HLB7489Twicea Part #6927-375-HLB7489 | Hubbell Premise Wiring |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| HLB7489 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SSH5N80ATwicea Part #700-375-SSH5N80A | Samsung Semiconductor |
Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 5 A | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-3P | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | 2.2 Ω | 20 A | 800 V | 333 mJ | METAL-OXIDE SEMICONDUCTOR | 160 W | - | - | - | ||
| SSH5N80A | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #TPC8106-H(TE12L)Twicea Part #4669-375-TPC8106-H(TE12L) | Toshiba America Electronic Components |
Description: MOSFET P-CH 30V 10A 8-SOP
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | 10 A | TOSHIBA CORP | - | 1 | 150 °C | - | , | - | - | Obsolete | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | P-CHANNEL | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 2.4 W | - | - | - | ||
| TPC8106-H(TE12L) 4669-375-TPC8106-H(TE12L) Toshiba America Electronic Components
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![]() | Mfr. Part #APM2101SGC-TRLTwicea Part #633-375-APM2101SGC-TRL | American Power Devices Inc |
Power Field-Effect Transistor, 3.5A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, JSC70-8
Datasheet
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| Min.:1 Mult.:1 | YES | 8 | SILICON | 3.5 A | ANPEC ELECTRONICS CORP | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-C8 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | Yes | - | e3 | Yes | EAR99 | MATTE TIN | - | DUAL | C BEND | - | compliant | - | 8 | R-PDSO-C8 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | P-CHANNEL | - | 0.065 Ω | 14 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| APM2101SGC-TRL | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #AP4420GJTwicea Part #2957-375-AP4420GJ | Advanced Power Electronics Corp |
Description: TRANSISTOR 52 A, 35 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 52 A | ADVANCED POWER ELECTRONICS CORP | - | 1 | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | TO-251 | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | compliant | - | 3 | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-251 | 0.01 Ω | 200 A | 35 V | 113 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| AP4420GJ | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #RJK5014DPPTwicea Part #668-375-RJK5014DPP | Renesas Electronics Corporation |
Description: 19A, 500V, 0.39ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-200FN, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 19 A | RENESAS ELECTRONICS CORP | 1 | 1 | - | PLASTIC/EPOXY | TO-200FN, 3 PIN | RECTANGULAR | FLANGE MOUNT | Not Recommended | TO-220FN | Yes | - | - | Yes | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | compliant | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.39 Ω | 38 A | 500 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| RJK5014DPP | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SSG4940NTwicea Part #16045-375-SSG4940N | Secos Corporation |
Description: Power Field-Effect Transistor
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| Min.:1 Mult.:1 | - | - | - | - | SECOS CORP | - | - | - | - | - | - | - | Contact Manufacturer | - | - | - | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| SSG4940N | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #TSM5NC50CFTwicea Part #799-375-TSM5NC50CF | Taiwan Semiconductor |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| TSM5NC50CF | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #STC5551FBTwicea Part #16027-375-STC5551FB | Kodenshi Corporation |
Description: Transistor,
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| Min.:1 Mult.:1 | - | - | - | - | KODENSHI AUK CORP | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| STC5551FB | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #FS12KMA-4ATwicea Part #539-375-FS12KMA-4A | Mitsubishi Electric |
Power Field-Effect Transistor, 12A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | 12 A | MITSUBISHI ELECTRIC CORP | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.4 Ω | 36 A | 200 V | - | METAL-OXIDE SEMICONDUCTOR | 32 W | - | - | - | ||
| FS12KMA-4A | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #MMD65R900QRHTwicea Part #4006-375-MMD65R900QRH | MagnaChip Semiconductor Ltd |
Power Field-Effect Transistor,
Datasheet
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| 12500
In Stock
| Min.:1 Mult.:1 | - | - | - | - | MAGNACHIP SEMICONDUCTOR LTD | - | - | - | - | , | - | - | Active | - | - | - | - | - | EAR99 | - | - | - | - | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| MMD65R900QRH | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #P20B12SL-5071Twicea Part #4502-375-P20B12SL-5071 | Shindengen Electronic Manufacturing Co Ltd |
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| P20B12SL-5071 4502-375-P20B12SL-5071 Shindengen Electronic Manufacturing Co Ltd
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![]() | Mfr. Part #BSW21ATwicea Part #815-375-BSW21A | Texas Instruments |
BSW21A
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| Min.:1 Mult.:1 | NO | - | - | - | TEXAS INSTRUMENTS INC | - | 1 | 175 °C | - | - | - | - | Obsolete | - | No | 300 MHz | - | - | EAR99 | - | - | - | - | - | not_compliant | - | - | - | - | SINGLE | - | - | - | PNP | - | - | - | - | - | - | 0.3 W | 0.2 A | 130 | - | ||
| BSW21A | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BC847B-CTwicea Part #16045-375-BC847B-C | Secos Corporation |
Transistor
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| Min.:1 Mult.:1 | - | - | - | - | SECOS CORP | - | - | - | - | - | - | - | Active | - | Yes | - | - | - | EAR99 | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BC847B-C | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #RCA423Twicea Part #391-375-RCA423 | Intersil Corporation |
RCA423
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| Min.:1 Mult.:1 | NO | - | - | - | HARRIS SEMICONDUCTOR | - | 1 | 175 °C | - | , | - | - | Obsolete | - | No | 4 MHz | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | unknown | - | - | - | - | SINGLE | - | - | - | NPN | - | - | - | - | - | - | 125 W | 7 A | 30 | - | ||
| RCA423 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #2SK932-23-TATwicea Part #689-375-2SK932-23-TA | SANYO Electric Co Ltd |
Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236
Datasheet
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| Min.:1 Mult.:1 | YES | 3 | SILICON | 0.05 A | SANYO ELECTRIC CO LTD | - | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | EAR99 | - | - | DUAL | GULL WING | - | unknown | - | - | R-PDSO-G3 | Not Qualified | SINGLE | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | TO-236 | - | - | - | - | JUNCTION | - | - | - | - | ||
| 2SK932-23-TA | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SFR9110Twicea Part #700-375-SFR9110 | Samsung Semiconductor |
Description: Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | YES | 2 | SILICON | 2.8 A | SAMSUNG SEMICONDUCTOR INC | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | EAR99 | - | - | SINGLE | GULL WING | - | unknown | - | - | R-PSSO-G2 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 1.2 Ω | 11 A | 100 V | 31 mJ | METAL-OXIDE SEMICONDUCTOR | 20 W | - | - | - | ||
| SFR9110 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #WNMD2180-8/TRTwicea Part #799-375-WNMD2180-8/TR | Will Semiconductor Ltd |
Description: Small Signal Field-Effect Transistor,
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | WILL SEMICONDUCTOR LTD | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| WNMD2180-8/TR | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #STW7NA100Twicea Part #761-375-STW7NA100 | STMicroelectronics |
7A, 1000V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Datasheet
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| 120
In Stock
| Min.:1 Mult.:1 | NO | 3 | SILICON | 7 A | STMICROELECTRONICS | - | 1 | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | - | e3 | - | EAR99 | MATTE TIN | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | not_compliant | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-247 | 1.7 Ω | 28 A | 1000 V | 800 mJ | METAL-OXIDE SEMICONDUCTOR | 190 W | - | - | 190 W | |
| STW7NA100 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #STW7NA100Twicea Part #799-375-STW7NA100 | New Jersey Semiconductor Products Inc |
Description: Trans MOSFET N-CH 1KV 7A 3-Pin(3 Tab) TO-247
Datasheet
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| Min.:1 Mult.:1 | - | - | SILICON | 7 A | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | - | 1 | - | - | - | - | - | Contact Manufacturer | - | - | - | - | - | EAR99 | - | - | - | - | - | unknown | - | - | - | - | SINGLE | ENHANCEMENT MODE | - | - | N-CHANNEL | - | - | - | 1000 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | ||
| STW7NA100 |
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