American Power Devices Inc APM2101SGC-TRL Specialized Transistors
APM2101SGC-TRL
1932-375-APM2101SGC-TRL
RoHS Compliant
Power Field-Effect Transistor, 3.5A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, JSC70-8
In Stock Min. : 1
Mult. : 1
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APM2101SGC-TRL Tech Specifications
Power Integrations APM2101SGC-TRL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Drain Current-Max (ID) | 3.5 A | |
| Package Description | SMALL OUTLINE, R-PDSO-C8 | |
| Ihs Manufacturer | ANPEC ELECTRONICS CORP | |
| Part Life Cycle Code | Obsolete | |
| Rohs Code | Yes | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-C8 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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