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Surface MountNumber of TerminalsTransistor Element MaterialExterior Housing MaterialDrain Current-Max (ID)Ihs ManufacturerNumber of ElementsOperating Temperature-MaxPackage Body MaterialPackage DescriptionPackage ShapePackage StylePart Life Cycle CodePart Package CodeRohs CodeTransition Frequency-Nom (fT)Turn-off Time-Max (toff)Turn-on Time-Max (ton)JESD-609 CodeECCN CodeTerminal FinishHTS CodeTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)Collector Current-Max (IC)DC Current Gain-Min (hFE)Feedback Cap-Max (Crss)Power Dissipation Ambient-Max
Samsung Semiconductor MMBTH10
Mfr.
MMBTH10
Twicea
700-375-MMBTH10 		Samsung Semiconductor
Transistor
    Min.:1
    Mult.:1
    		 YES - - 1 - SAMSUNG SEMICONDUCTOR INC - 150 °C - - - - Obsolete - No 650 MHz - - e0 EAR99 Tin/Lead (Sn/Pb) - - - unknown - - - SINGLE - - - NPN - - - - - - 0.225 W 0.1 A 60 - -
    MMBTH10
    MMBTH10

    700-375-MMBTH10 Samsung Semiconductor
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    Samsung Semiconductor IRFR420A
    Mfr.
    IRFR420A
    Twicea
    700-375-IRFR420A     		Samsung Semiconductor
    Power Field-Effect Transistor, 2.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
      Min.:1
      Mult.:1
      		 YES 2 SILICON 1 2.3 A SAMSUNG SEMICONDUCTOR INC - 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Transferred - - - - - - EAR99 - - SINGLE GULL WING unknown 3 R-PSSO-G2 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN - N-CHANNEL - 3 Ω 8 A 500 V 206 mJ METAL-OXIDE SEMICONDUCTOR 41 W - - - -
      IRFR420A
      IRFR420A

      700-375-IRFR420A Samsung Semiconductor
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      Samsung Semiconductor SSP1N60A
      Mfr.
      SSP1N60A
      Twicea
      700-375-SSP1N60A       		Samsung Semiconductor
      Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
        Min.:1
        Mult.:1
        		 NO 3 SILICON 1 1 A SAMSUNG SEMICONDUCTOR INC - 150 °C PLASTIC/EPOXY TO-220, 3 PIN RECTANGULAR FLANGE MOUNT Transferred TO-220AB - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - N-CHANNEL TO-220AB 12 Ω 3 A 600 V 44 mJ METAL-OXIDE SEMICONDUCTOR 34 W - - - -
        SSP1N60A
        SSP1N60A

        700-375-SSP1N60A Samsung Semiconductor
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        Samsung Semiconductor SSD2102
        Mfr.
        SSD2102
        Twicea
        700-375-SSD2102         		Samsung Semiconductor
        Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
          Min.:1
          Mult.:1
          		 YES 8 SILICON - 5.3 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G8 RECTANGULAR SMALL OUTLINE Obsolete SOT - - - - - EAR99 - - DUAL GULL WING unknown 8 R-PDSO-G8 Not Qualified SINGLE ENHANCEMENT MODE - - P-CHANNEL - 0.06 Ω - 20 V - METAL-OXIDE SEMICONDUCTOR 2.5 W - - - -
          SSD2102
          SSD2102

          700-375-SSD2102 Samsung Semiconductor
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          Samsung Semiconductor SSU1N60
          Mfr.
          SSU1N60
          Twicea
          700-375-SSU1N60           		Samsung Semiconductor
          Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
            Min.:1
            Mult.:1
            		 NO 3 SILICON - 1 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY IN-LINE, R-PSIP-T3 RECTANGULAR IN-LINE Obsolete - - - 90 ns 35 ns - EAR99 - 8541.29.00.95 SINGLE THROUGH-HOLE unknown 3 R-PSIP-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - SWITCHING N-CHANNEL - 12 Ω 3 A 600 V - METAL-OXIDE SEMICONDUCTOR 40 W - - 20 pF 40 W
            SSU1N60
            SSU1N60

            700-375-SSU1N60 Samsung Semiconductor
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            Samsung Semiconductor SSH8N60
            Mfr.
            SSH8N60
            Twicea
            700-375-SSH8N60             		Samsung Semiconductor
            Power Field-Effect Transistor, 8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
              Min.:1
              Mult.:1
              		 NO 3 SILICON - 8 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE - - N-CHANNEL - 1 Ω - 600 V - METAL-OXIDE SEMICONDUCTOR 170 W - - - -
              SSH8N60
              SSH8N60

              700-375-SSH8N60 Samsung Semiconductor
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              Samsung Semiconductor SSH7N90
              Mfr.
              SSH7N90
              Twicea
              700-375-SSH7N90               		Samsung Semiconductor
              Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
              26
                Min.:1
                Mult.:1
                		 NO 3 SILICON - 7 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY TO-3P, 3 PIN RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE - - N-CHANNEL - 1.8 Ω - 900 V - METAL-OXIDE SEMICONDUCTOR 190 W - - - -
                SSH7N90
                SSH7N90

                700-375-SSH7N90 Samsung Semiconductor
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                Samsung Electronics Co. Ltd SI-B9V142570EU
                Mfr.
                SI-B9V142570EU
                Twicea
                700-375-SI-B9V142570EU                 		Samsung Electronics Co. Ltd
                -
                  Min.:1
                  Mult.:1
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                  SI-B9V142570EU
                  SI-B9V142570EU

                  700-375-SI-B9V142570EU Samsung Electronics Co. Ltd
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                  Samsung Semiconductor SFW9644
                  Mfr.
                  SFW9644
                  Twicea
                  700-375-SFW9644                   		Samsung Semiconductor
                  Power Field-Effect Transistor, 8.6A I(D), 250V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
                    Min.:1
                    Mult.:1
                    		 YES 2 SILICON - 8.6 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Obsolete - - - - - - EAR99 - - SINGLE GULL WING unknown 3 R-PSSO-G2 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN - P-CHANNEL - 0.8 Ω 34 A 250 V 462 mJ METAL-OXIDE SEMICONDUCTOR 123 W - - - -
                    SFW9644
                    SFW9644

                    700-375-SFW9644 Samsung Semiconductor
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                    Samsung Semiconductor IRF9221
                    Mfr.
                    IRF9221
                    Twicea
                    700-375-IRF9221                     		Samsung Semiconductor
                    Transistor
                      Min.:1
                      Mult.:1
                      		 NO - - - 3.5 A SAMSUNG SEMICONDUCTOR INC 1 150 °C - , - - Obsolete - - - - - - EAR99 - - - - unknown - - - SINGLE ENHANCEMENT MODE - - P-CHANNEL - - - - - METAL-OXIDE SEMICONDUCTOR 40 W - - - -
                      IRF9221
                      IRF9221

                      700-375-IRF9221 Samsung Semiconductor
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                      Samsung Semiconductor IRFW820TM
                      Mfr.
                      IRFW820TM
                      Twicea
                      700-375-IRFW820TM                       		Samsung Semiconductor
                      -
                        Min.:1
                        Mult.:1
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                        IRFW820TM
                        IRFW820TM

                        700-375-IRFW820TM Samsung Semiconductor
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                        Samsung Semiconductor SFS9530
                        Mfr.
                        SFS9530
                        Twicea
                        700-375-SFS9530                         		Samsung Semiconductor
                        Power Field-Effect Transistor, 8A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
                          Min.:1
                          Mult.:1
                          		 NO 3 SILICON - 8 A SAMSUNG SEMICONDUCTOR INC 1 175 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred TO-220AB - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE ISOLATED SWITCHING P-CHANNEL TO-220AB 0.3 Ω 32 A 100 V 213 mJ METAL-OXIDE SEMICONDUCTOR 39 W - - - -
                          SFS9530
                          SFS9530

                          700-375-SFS9530 Samsung Semiconductor
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                          Samsung Semiconductor SSH6N55
                          Mfr.
                          SSH6N55
                          Twicea
                          700-375-SSH6N55                           		Samsung Semiconductor
                          Power Field-Effect Transistor, 6A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                            Min.:1
                            Mult.:1
                            		 NO 3 SILICON - 6 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-3P - - 320 ns 210 ns - EAR99 - 8541.29.00.95 SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE - SWITCHING N-CHANNEL - 1.8 Ω 24 A 550 V 570 mJ METAL-OXIDE SEMICONDUCTOR 125 W - - 150 pF 125 W
                            SSH6N55
                            SSH6N55

                            700-375-SSH6N55 Samsung Semiconductor
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                            Samsung Semiconductor SSD2106
                            Mfr.
                            SSD2106
                            Twicea
                            700-375-SSD2106                             		Samsung Semiconductor
                            Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
                              Min.:1
                              Mult.:1
                              		 YES 8 SILICON - 2.5 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PDSO-G8 RECTANGULAR SMALL OUTLINE Obsolete SOT - - - - - EAR99 - - DUAL GULL WING unknown 8 R-PDSO-G8 Not Qualified SINGLE ENHANCEMENT MODE - - P-CHANNEL - 0.25 Ω - 20 V - METAL-OXIDE SEMICONDUCTOR 2.5 W - - - -
                              SSD2106
                              SSD2106

                              700-375-SSD2106 Samsung Semiconductor
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                              Samsung Semiconductor IRF9222
                              Mfr.
                              IRF9222
                              Twicea
                              700-375-IRF9222                               		Samsung Semiconductor
                              Transistor
                                Min.:1
                                Mult.:1
                                		 NO - - - 3 A SAMSUNG SEMICONDUCTOR INC 1 150 °C - , - - Obsolete - - - - - - EAR99 - - - - unknown - - - SINGLE ENHANCEMENT MODE - - P-CHANNEL - - - - - METAL-OXIDE SEMICONDUCTOR 40 W - - - -
                                IRF9222
                                IRF9222

                                700-375-IRF9222 Samsung Semiconductor
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                                Samsung Semiconductor SSH9N90A
                                Mfr.
                                SSH9N90A
                                Twicea
                                700-375-SSH9N90A                                 		Samsung Semiconductor
                                Power Field-Effect Transistor, 9A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                                  Min.:1
                                  Mult.:1
                                  		 NO 3 SILICON - 9 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred TO-3P - - 435 ns 190 ns - EAR99 - 8541.29.00.95 SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - N-CHANNEL - 1.4 Ω 36 A 900 V 772 mJ METAL-OXIDE SEMICONDUCTOR 280 W - - 125 pF 280 W
                                  SSH9N90A
                                  SSH9N90A

                                  700-375-SSH9N90A Samsung Semiconductor
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                                  Samsung Semiconductor SSH4N90AS
                                  Mfr.
                                  SSH4N90AS
                                  Twicea
                                  700-375-SSH4N90AS                                   		Samsung Semiconductor
                                  Description: Power Field-Effect Transistor, 4.5A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                                    Min.:1
                                    Mult.:1
                                    		 NO 3 SILICON - 4.5 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred TO-3P - - 215 ns 120 ns - EAR99 - 8541.29.00.95 SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - N-CHANNEL - 3.7 Ω 18 A 900 V 536 mJ METAL-OXIDE SEMICONDUCTOR 140 W - - 40 pF 140 W
                                    SSH4N90AS
                                    SSH4N90AS

                                    700-375-SSH4N90AS Samsung Semiconductor
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                                    Samsung Semiconductor SSH5N80A
                                    Mfr.
                                    SSH5N80A
                                    Twicea
                                    700-375-SSH5N80A                                     		Samsung Semiconductor
                                    Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
                                      Min.:1
                                      Mult.:1
                                      		 NO 3 SILICON - 5 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Transferred TO-3P - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE - - N-CHANNEL - 2.2 Ω 20 A 800 V 333 mJ METAL-OXIDE SEMICONDUCTOR 160 W - - - -
                                      SSH5N80A
                                      SSH5N80A

                                      700-375-SSH5N80A Samsung Semiconductor
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                                      Samsung Semiconductor SFR9110
                                      Mfr.
                                      SFR9110
                                      Twicea
                                      700-375-SFR9110                                       		Samsung Semiconductor
                                      Description: Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
                                        Min.:1
                                        Mult.:1
                                        		 YES 2 SILICON - 2.8 A SAMSUNG SEMICONDUCTOR INC 1 150 °C PLASTIC/EPOXY SMALL OUTLINE, R-PSSO-G2 RECTANGULAR SMALL OUTLINE Transferred - - - - - - EAR99 - - SINGLE GULL WING unknown - R-PSSO-G2 Not Qualified SINGLE WITH BUILT-IN DIODE ENHANCEMENT MODE DRAIN SWITCHING P-CHANNEL - 1.2 Ω 11 A 100 V 31 mJ METAL-OXIDE SEMICONDUCTOR 20 W - - - -
                                        SFR9110
                                        SFR9110

                                        700-375-SFR9110 Samsung Semiconductor
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                                        Samsung Semiconductor IRFS9520
                                        Mfr.
                                        IRFS9520
                                        Twicea
                                        700-375-IRFS9520                                         		Samsung Semiconductor
                                        Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
                                          Min.:1
                                          Mult.:1
                                          		 NO 3 SILICON - 6 A SAMSUNG SEMICONDUCTOR INC 1 - PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Obsolete TO-220F - - - - - EAR99 - - SINGLE THROUGH-HOLE unknown 3 R-PSFM-T3 Not Qualified SINGLE ENHANCEMENT MODE ISOLATED - P-CHANNEL TO-220AB 0.6 Ω - 100 V - METAL-OXIDE SEMICONDUCTOR - - - - -
                                          IRFS9520
                                          IRFS9520

                                          700-375-IRFS9520 Samsung Semiconductor
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                                          Discrete Semiconductor Products

                                          Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: MMBTH10,IRFR420A,SSP1N60A,SSD2102,SSU1N60.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 126 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.