Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
SSH4N90AS
Samsung SSH4N90AS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TO-3P | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Drain Current-Max (ID) | 4.5 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Max (toff) | 215 ns | |
| Turn-on Time-Max (ton) | 120 ns | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 3.7 Ω | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| DS Breakdown Voltage-Min | 900 V | |
| Avalanche Energy Rating (Eas) | 536 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 140 W | |
| Feedback Cap-Max (Crss) | 40 pF | |
| Power Dissipation Ambient-Max | 140 W |
SSH4N90AS
Download datasheets and manufacturer documentation for SSH4N90AS
- DatasheetsSAMSS14077-1.pdf
:
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



