Transistors - Special Purpose Products For Sale - PDF - Discrete Semiconductor Products

Discrete Semiconductor Products
Transistors - Special Purpose

						Surface Mount	Material	Housing material	Number of Terminals	Transistor Element Material	Exterior Housing Material	Development Kit	Drain Current-Max (ID)	Factory Pack Quantity	Gross weight	Ihs Manufacturer	Maximum current	Maximum Drain Gate Voltage	Maximum Operating Frequency	Maximum Operating Temperature	Minimum Operating Frequency	Minimum Operating Temperature	Moisture Sensitivity Levels	Mounting Styles	Name	Nominal voltage	Number of Elements	Operating Temperature-Max	Operating Temperature-Min	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Pd - Power Dissipation	RoHS	Rohs Code	Transport packaging size/quantity	Wire cross-section	Packaging	Series	ECCN Code	Type	Color	Additional Feature	HTS Code	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Time@Peak Reflow Temperature-Max (s)	JESD-30 Code	Qualification Status	Configuration	Operating Mode	Case Connection	Output Power	Transistor Application	Polarity/Channel Type	Operating temperature range	JEDEC-95 Code	Gain	Drain-source On Resistance-Max	Pulsed Drain Current-Max (IDM)	DS Breakdown Voltage-Min	Avalanche Energy Rating (Eas)	FET Technology	Power Dissipation-Max (Abs)	Feedback Cap-Max (Crss)	Highest Frequency Band	Power Dissipation Ambient-Max	Power Gain-Min (Gp)
	Mfr. UJ3C120080K3S Twicea 4330-375-UJ3C120080K3S	Qorvo	Description: Power Field-Effect Transistor, 33A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Junction Cascode FET, TO-247,		Min.:1 Mult.:1	NO	housing - PA66, UL94V-2/UL94V-0	PA66 UL94V-0	3	SILICON CARBIDE	1	-	33 A	-	11.68	QORVO INC	24 A	-	-	-	-	-	-	-	Clamp-terminal 2x2 pass-through branch on 2 poles	(AC) 250 V	-	175 °C	-55 °C	PLASTIC/EPOXY	-	RECTANGULAR	FLANGE MOUNT	Active	-	-	Yes	473935/2000	0.08...2.5 (4.0 for multi-strand wire) mm2	-	-	EAR99	-	markings: red/blue	-	-	SINGLE	THROUGH-HOLE	NOT SPECIFIED	compliant	NOT SPECIFIED	R-PSFM-T3	-	SINGLE WITH BUILT-IN DIODE	DEPLETION MODE	DRAIN	-	SWITCHING	N-CHANNEL	-20…+105 °C	TO-247	-	0.1 Ω	77 A	1200 V	58.5 mJ	JUNCTION CASCODE	254.2 W	2.1 pF	-	-	-
UJ3C120080K3S 4330-375-UJ3C120080K3S Qorvo : : - : - 1 : -
	Mfr. TGF2957 Twicea 4330-375-TGF2957	Qorvo	RF Power Field-Effect Transistor		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	,	-	-	Obsolete	-	-	Yes	-	-	-	-	3A001.B.3.B.2	-	-	-	-	-	-	260	compliant	30	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF2957 4330-375-TGF2957 Qorvo : : - : - 1 : -
	Mfr. FPD2250SOT89 Twicea 4330-375-FPD2250SOT89	Qorvo	RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN		Min.:1 Mult.:1	YES	-	-	3	SILICON	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	1	-	-	-	1	175 °C	-	PLASTIC/EPOXY	SOT-89, 3 PIN	RECTANGULAR	SMALL OUTLINE	Active	-	-	No	-	-	-	-	EAR99	-	-	-	8541.29.00.95	SINGLE	FLAT	-	compliant	-	R-PSSO-F3	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	8 V	-	HIGH ELECTRON MOBILITY	-	-	-	2.5 W	-
FPD2250SOT89 4330-375-FPD2250SOT89 Qorvo : : - : - 1 : -
	Mfr. TGF2023-01 Twicea 4330-375-TGF2023-01	Qorvo	Transistor		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF2023-01 4330-375-TGF2023-01 Qorvo : : - : - 1 : -
	Mfr. PD25025F Twicea 4330-375-PD25025F	Qorvo	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,		Min.:1 Mult.:1	YES	-	-	2	SILICON	-	-	4.25 A	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	1	-	-	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	No	-	-	-	-	EAR99	-	-	-	-	DUAL	FLAT	NOT SPECIFIED	compliant	NOT SPECIFIED	R-CDFM-F2	Not Qualified	SINGLE	ENHANCEMENT MODE	SOURCE	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	65 V	-	METAL-OXIDE SEMICONDUCTOR	-	-	S BAND	-	-
PD25025F 4330-375-PD25025F Qorvo : : - : - 1 : -
	Mfr. SP2030 Twicea 4330-375-SP2030	Qorvo	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	1	200 °C	-	-	,	-	-	Active	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	compliant	-	-	-	SINGLE	-	-	-	-	N-CHANNEL	-	-	-	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-
SP2030 4330-375-SP2030 Qorvo : : - : - 1 : -
	Mfr. TGF2120 Twicea 4330-375-TGF2120	Qorvo	RF Small Signal Field-Effect Transistor,		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Obsolete	-	-	Yes	-	-	-	-	EAR99	-	-	-	-	-	-	260	compliant	30	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF2120 4330-375-TGF2120 Qorvo : : - : - 1 : -
	Mfr. QPD1035L Twicea 4330-375-QPD1035L	Qorvo	GaN FETs 30W, DC - 6GHz, Flanged		Min.:1 Mult.:1	-	-	-	-	-	-	QPD1035EVB0- 50V, QPD1035LEVB0-50V	-	50	-	-	-	145 V	6 GHz	+ 85 C	DC	- 40 C	-	Flanged	-	-	-	-	-	-	-	-	-	-	50.4 W	RoHS Compliant	-	-	-	Reel	QPD1035L	-	Power Transistor	-	-	-	-	-	-	-	-	-	-	-	-	-	50 W	-	-	-	-	12.1 dB	-	-	-	-	-	-	-	-	-	-
QPD1035L 4330-375-QPD1035L Qorvo : : - : - 1 : -
	Mfr. QPD1035 Twicea 4330-375-QPD1035	Qorvo	GaN FETs 30W, DC - 6GHz		Min.:1 Mult.:1	-	-	-	-	-	-	QPD1035EVB0- 50V, QPD1035LEVB0-50V	-	50	-	-	-	145 V	6 GHz	+ 85 C	DC	- 40 C	-	Flanged	-	-	-	-	-	-	-	-	-	-	50.4 W	RoHS Compliant	-	-	-	Reel	QPD1035	-	Power Transistor	-	-	-	-	-	-	-	-	-	-	-	-	-	50 W	-	-	-	-	12.1 dB	-	-	-	-	-	-	-	-	-	-
QPD1035 4330-375-QPD1035 Qorvo : : - : - 1 : -
	Mfr. UF4C120070B7S Twicea 4330-375-UF4C120070B7S	Qorvo	1200V, Sic Fet		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UF4C120070B7S 4330-375-UF4C120070B7S Qorvo : : - : - 1 : -
	Mfr. UJ3C065030K3S Twicea 4330-375-UJ3C065030K3S	Qorvo	TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS	624	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UJ3C065030K3S 4330-375-UJ3C065030K3S Qorvo : : - : 624 1 : -
	Mfr. CLY2 Twicea 4330-375-CLY2	Qorvo	RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, ROHS COMPLIANT, MW6, 6 PIN		Min.:1 Mult.:1	YES	-	-	6	GALLIUM ARSENIDE	-	-	0.6 A	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	1	-	-	PLASTIC/EPOXY	SMALL OUTLINE, R-PDSO-G6	RECTANGULAR	SMALL OUTLINE	Obsolete	-	-	Yes	-	-	-	-	5A991.B	-	-	LOW NOISE	-	DUAL	GULL WING	260	compliant	30	R-PDSO-G6	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	9 V	-	JUNCTION	-	-	S BAND	-	14.5 dB
CLY2 4330-375-CLY2 Qorvo : : - : - 1 : -
	Mfr. FPD750SOT343E Twicea 4330-375-FPD750SOT343E	Qorvo	Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-4		Min.:1 Mult.:1	YES	-	-	4	GALLIUM ARSENIDE	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	1	-	-	PLASTIC/EPOXY	SMALL OUTLINE, R-PDSO-G4	RECTANGULAR	SMALL OUTLINE	Obsolete	-	-	Yes	-	-	-	-	EAR99	-	-	-	-	DUAL	GULL WING	260	unknown	30	R-PDSO-G4	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	6 V	-	HIGH ELECTRON MOBILITY	-	-	S BAND	-	-
FPD750SOT343E 4330-375-FPD750SOT343E Qorvo : : - : - 1 : -
	Mfr. T1G3000532-SM Twicea 4330-375-T1G3000532-SM	Qorvo	RF Power Field-Effect Transistor,		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	,	-	-	Obsolete	-	-	Yes	-	-	-	-	EAR99	-	-	-	-	-	-	260	compliant	30	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
T1G3000532-SM 4330-375-T1G3000532-SM Qorvo : : - : - 1 : -
	Mfr. FPD3000 Twicea 4330-375-FPD3000	Qorvo	RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE		Min.:1 Mult.:1	YES	-	-	-	SILICON	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	1	175 °C	-	UNSPECIFIED	DIE	RECTANGULAR	UNCASED CHIP	Active	-	-	-	-	-	-	-	EAR99	-	-	-	8541.29.00.40	UPPER	NO LEAD	-	compliant	-	R-XUUC-N	Not Qualified	-	DEPLETION MODE	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	10 V	-	HIGH ELECTRON MOBILITY	-	-	X BAND	7.3 W	-
FPD3000 4330-375-FPD3000 Qorvo : : - : - 1 : -
	Mfr. TGF2952 Twicea 4330-375-TGF2952	Qorvo	Description: RF Small Signal Field-Effect Transistor		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	,	-	-	Obsolete	-	-	Yes	-	-	-	-	EAR99	-	-	-	-	-	-	260	compliant	30	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF2952 4330-375-TGF2952 Qorvo : : - : - 1 : -
	Mfr. TGF2953 Twicea 4330-375-TGF2953	Qorvo	RF Power Field-Effect Transistor		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	,	-	-	Obsolete	-	-	Yes	-	-	-	-	EAR99	-	-	-	-	-	-	260	compliant	30	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TGF2953 4330-375-TGF2953 Qorvo : : - : - 1 : -
	Mfr. FPD1500SOT89 Twicea 4330-375-FPD1500SOT89	Qorvo	RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, SOT-89, 3 PIN		Min.:1 Mult.:1	YES	-	-	3	SILICON	-	-	0.55 A	-	-	QORVO INC	-	-	-	-	-	-	1	-	-	-	1	150 °C	-	PLASTIC/EPOXY	SMALL OUTLINE, R-PSSO-F3	RECTANGULAR	SMALL OUTLINE	Obsolete	-	-	No	-	-	-	-	EAR99	-	-	-	8541.29.00.95	SINGLE	FLAT	-	compliant	-	R-PSSO-F3	Not Qualified	SINGLE	DEPLETION MODE	SOURCE	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	8 V	-	HIGH ELECTRON MOBILITY	-	-	-	2.3 W	-
FPD1500SOT89 4330-375-FPD1500SOT89 Qorvo : : - : - 1 : -
	Mfr. UJ4C075033L8S Twicea 4330-375-UJ4C075033L8S	Qorvo	-		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UJ4C075033L8S 4330-375-UJ4C075033L8S Qorvo : : - : - 1 : -
	Mfr. QPD2795 Twicea 4330-375-QPD2795	Qorvo	RF Power Field-Effect Transistor,	434	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	QORVO INC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	,	-	-	Obsolete	-	-	Yes	-	-	-	-	EAR99	-	-	-	-	-	-	260	compliant	30	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
QPD2795 4330-375-QPD2795 Qorvo : : - : 434 1 : -

Discrete Semiconductor Products

Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: UJ3C120080K3S,TGF2957,FPD2250SOT89,TGF2023-01,PD25025F.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 29 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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Discrete Semiconductor Products