Qorvo FPD3000 Specialized Transistors
FPD3000
1980-375-FPD3000
RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE
Min. : 1
Mult. : 1
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FPD3000
Qorvo FPD3000 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | QORVO INC | |
| Package Description | DIE | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.40 | |
| Terminal Position | UPPER | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-XUUC-N | |
| Qualification Status | Not Qualified | |
| Operating Mode | DEPLETION MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 10 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | X BAND | |
| Power Dissipation Ambient-Max | 7.3 W |
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