Transistors - Special Purpose Products For Sale - PDF - Discrete Semiconductor Products

Discrete Semiconductor Products
Transistors - Special Purpose

							Factory Lead Time	Contact Plating	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Exterior Housing Material	Base Product Number	Collector-Emitter Saturation Voltage	Current type	Drain Current-Max (ID)	Gross weight	Ihs Manufacturer	Mfr	Moisture Sensitivity Levels	Number of Elements	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Relative humidity	Rohs Code	Size of mounting hole	Transition Frequency-Nom (fT)	Transport packaging size/quantity	Turn Off Delay Time	Voltage Rated	Weight gross	Operating temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Applications	Additional Feature	Voltage - Rated DC	Current Rating (Amps)	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Depth	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	Reference Standard	JESD-30 Code	Qualification Status	Rise Time-Max	Polarity	Configuration	Position	Number of Channels	Element Configuration	Operating Mode	Case Connection	Turn On Delay Time	Switch type	Transistor Application	Gain Bandwidth Product	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Transistor Type	Collector Emitter Voltage (VCEO)	Max Collector Current	Operating temperature range	Continuous Drain Current (ID)	Rated current	JEDEC-95 Code	Gate to Source Voltage (Vgs)	Max Frequency	Drain Current-Max (Abs) (ID)	Drain-source On Resistance-Max	Transition Frequency	Input Capacitance	DS Breakdown Voltage-Min	FET Technology	Collector Base Voltage (VCBO)	Power Dissipation-Max (Abs)	Emitter Base Voltage (VEBO)	Collector Current-Max (IC)	DC Current Gain-Min (hFE)	Rated voltage	Drain to Source Resistance	Continuous Collector Current	Collector-Emitter Voltage-Max	VCEsat-Max	Feedback Cap-Max (Crss)	Turn Off Time-Max (toff)	Turn On Time-Max (ton)	Measuring range	Fall Time-Max (tf)	Accuracy class	Frequency (Hz)	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free

						Factory Lead Time	Contact Plating	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Exterior Housing Material	Base Product Number	Collector-Emitter Saturation Voltage	Current type	Drain Current-Max (ID)	Gross weight	Ihs Manufacturer	Mfr	Moisture Sensitivity Levels	Number of Elements	Operating Temperature-Max	Operating Temperature-Min	Package	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Product Status	Relative humidity	Rohs Code	Size of mounting hole	Transition Frequency-Nom (fT)	Transport packaging size/quantity	Turn Off Delay Time	Voltage Rated	Weight gross	Operating temperature	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Applications	Additional Feature	Voltage - Rated DC	Current Rating (Amps)	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Depth	Reach Compliance Code	Current Rating	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	Reference Standard	JESD-30 Code	Qualification Status	Rise Time-Max	Polarity	Configuration	Position	Number of Channels	Element Configuration	Operating Mode	Case Connection	Turn On Delay Time	Switch type	Transistor Application	Gain Bandwidth Product	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Transistor Type	Collector Emitter Voltage (VCEO)	Max Collector Current	Operating temperature range	Continuous Drain Current (ID)	Rated current	JEDEC-95 Code	Gate to Source Voltage (Vgs)	Max Frequency	Drain Current-Max (Abs) (ID)	Drain-source On Resistance-Max	Transition Frequency	Input Capacitance	DS Breakdown Voltage-Min	FET Technology	Collector Base Voltage (VCBO)	Power Dissipation-Max (Abs)	Emitter Base Voltage (VEBO)	Collector Current-Max (IC)	DC Current Gain-Min (hFE)	Rated voltage	Drain to Source Resistance	Continuous Collector Current	Collector-Emitter Voltage-Max	VCEsat-Max	Feedback Cap-Max (Crss)	Turn Off Time-Max (toff)	Turn On Time-Max (ton)	Measuring range	Fall Time-Max (tf)	Accuracy class	Frequency (Hz)	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free
	Mfr. DMB53D0UV-7 Twicea 233-375-DMB53D0UV-7	Diodes Incorporated	N-Channel Enhancement Mode MOSFET Plus PNP Transistor Automotive 6-Pin SOT-563 T/R	18430	Min.:1 Mult.:1	12 Weeks	-	Surface Mount	Surface Mount	SOT-563, SOT-666	-	6	-	3.005049mg	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	45V NPN 50V N-Channel	-	-	Tape & Reel (TR)	2011	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	Matte Tin (Sn)	150°C	-55°C	General Purpose	HIGH RELIABILITY	-	100mA PNP 160mA N-Channel	250mW	DUAL	FLAT	260	-	-	160mA	40	-	6	-	-	-	-	NPN	SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE	-	1	-	ENHANCEMENT MODE	-	-	-	SWITCHING	-	50V	-	NPN, N-Channel	-	-	-	160mA	-	-	12V	-	-	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	200	-	3.1Ohm	-	-	0.3 V	-	-	-	-	-	-	-	-	-	-	No	No SVHC	ROHS3 Compliant	-
DMB53D0UV-7 233-375-DMB53D0UV-7 Diodes Incorporated : : - : 18430 1 : -
	Mfr. CTA2N1P-7-F Twicea 233-375-CTA2N1P-7-F	Diodes Incorporated	TRANS ARRAY NPN/P-CH 60V SOT363	6349	Min.:1 Mult.:1	10 Weeks	Tin	Surface Mount	Surface Mount	6-TSSOP, SC-88, SOT-363	-	6	-	6.010099mg	-	-	-	-	750mV	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	2007	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	-	150°C	-55°C	General Purpose	-	45V	600mA NPN 130mA P-Channel	150mW	-	GULL WING	260	-	-	130mA	40	-	6	-	-	Not Qualified	20ns	NPN, PNP	-	-	-	Dual	-	-	-	-	-	250MHz	-	-	NPN, P-Channel	40V	600mA	-	-	-	-	-	-	-	-	250MHz	-	-	-	60V	-	6V	-	40	-	-	600mA	-	0.75 V	-	255ns	35ns	-	30ns	-	-	1mm	2.2mm	1.35mm	-	-	ROHS3 Compliant	Lead Free
CTA2N1P-7-F 233-375-CTA2N1P-7-F Diodes Incorporated : : - : 6349 1 : -
	Mfr. DMB53D0UDW-7 Twicea 233-375-DMB53D0UDW-7	Diodes Incorporated	MOSFET N-CHANNEL NPN ENHANCEMENT MODE	402000	Min.:1 Mult.:1	18 Weeks	-	Surface Mount	Surface Mount	6-TSSOP, SC-88, SOT-363	-	6	-	6.010099mg	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	45V NPN 50V N-Channel	-	-	Tape & Reel (TR)	2009	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	Matte Tin (Sn)	150°C	-55°C	General Purpose	HIGH RELIABILITY	-	100mA PNP 160mA N-Channel	250mW	DUAL	GULL WING	260	-	-	160mA	40	DMB53D0U	6	-	-	Not Qualified	-	-	-	-	1	Single	ENHANCEMENT MODE	-	-	-	SWITCHING	-	50V	-	NPN, N-Channel	-	-	-	160mA	-	-	12V	-	-	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	200	-	5Ohm	-	-	0.3 V	-	-	-	-	-	-	-	-	-	-	-	No SVHC	ROHS3 Compliant	Lead Free
DMB53D0UDW-7 233-375-DMB53D0UDW-7 Diodes Incorporated : : - : 402000 1 : -
	Mfr. LMN400E01-7 Twicea 233-375-LMN400E01-7	Diodes Incorporated	PNP Transistor and ESD Protected N-Mosfet 6-Pin SOT-363 T/R		Min.:1 Mult.:1	19 Weeks	-	Surface Mount	Surface Mount	6-TSSOP, SC-88, SOT-363	-	6	-	6.010099mg	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	2006	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	Matte Tin (Sn)	150°C	-55°C	Load Switch	-	-50V	400mA PNP 115mA	-	DUAL	GULL WING	260	-	-	115mA	40	LMN400	6	-	-	Not Qualified	-	PNP	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR	-	-	-	ENHANCEMENT MODE	-	-	-	SWITCHING	-	-	-	PNP Pre-Biased, N-Channel Pre-Biased	-	-	-	-	-	-	-	-	0.3A	1.125Ohm	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	0.2W	-	0.4A	70	-	-	-	-	-	5 pF	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
LMN400E01-7 233-375-LMN400E01-7 Diodes Incorporated : : - : - 1 : -
	Mfr. DMB54D0UDW-7 Twicea 233-375-DMB54D0UDW-7	Diodes Incorporated	MOSFET NMOS PNP TRANS SOT-363	77886	Min.:1 Mult.:1	18 Weeks	-	Surface Mount	Surface Mount	6-TSSOP, SC-88, SOT-363	-	6	-	6.010099mg	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	45V PNP 50V N-Channel	-	-	Tape & Reel (TR)	2009	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	Matte Tin (Sn)	150°C	-55°C	General Purpose	ESD PROTECTION, LOW THRESHOLD	-	100mA PNP 160mA N-Channel	-	DUAL	GULL WING	260	-	-	160mA	40	DMB54D0U	6	-	-	Not Qualified	-	-	SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE	-	-	-	ENHANCEMENT MODE	-	-	-	SWITCHING	-	50V	-	PNP, N-Channel	-	-	-	160mA	-	-	-	-	-	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	0.25W	-	0.1A	220	-	5Ohm	-	-	0.4 V	-	-	-	-	-	-	-	-	-	-	-	No SVHC	ROHS3 Compliant	-
DMB54D0UDW-7 233-375-DMB54D0UDW-7 Diodes Incorporated : : - : 77886 1 : -
	Mfr. CTA2P1N-7-F Twicea 233-375-CTA2P1N-7-F	Diodes Incorporated	TRANS ARRAY PNP/N-CH 40V SOT363	785	Min.:1 Mult.:1	19 Weeks	Tin	Surface Mount	Surface Mount	6-TSSOP, SC-88, SOT-363	-	6	-	6.010099mg	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	11 ns	-	-	-	Tape & Reel (TR)	2007	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	-	150°C	-55°C	General Purpose	-	45V	600mA PNP 115mA N-Channel	150mW	-	GULL WING	260	-	-	115mA	40	CTA2P1N	6	-	-	Not Qualified	20ns	PNP	-	-	-	Dual	-	-	7 ns	-	-	200MHz	60V	-	PNP, N-Channel	-40V	-	-	115mA	-	-	-	-	-	-	200MHz	22pF	-	-	-40V	-	-5V	-	20	-	13.5Ohm	-600mA	-	0.75 V	-	255ns	35ns	-	30ns	-	-	1mm	2.2mm	1.35mm	-	-	ROHS3 Compliant	Lead Free
CTA2P1N-7-F 233-375-CTA2P1N-7-F Diodes Incorporated : : - : 785 1 : -
	Mfr. DMB54D0UV-7 Twicea 233-375-DMB54D0UV-7	Diodes Incorporated	MOSFET NMOS PNP TRANS SOT-563	3200	Min.:1 Mult.:1	12 Weeks	-	Surface Mount	Surface Mount	SOT-563, SOT-666	-	6	-	3.005049mg	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	45V PNP 50V N-Channel	-	-	Tape & Reel (TR)	2011	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	Matte Tin (Sn)	150°C	-55°C	General Purpose	HIGH RELIABILITY	-	100mA PNP 160mA N-Channel	250mW	DUAL	FLAT	260	-	-	160mA	40	-	6	-	-	Not Qualified	-	PNP	SINGLE WITH BUILT-IN FET AND DIODE	-	1	-	-	-	-	-	SWITCHING	-	50V	-	PNP, N-Channel	-	-	-	160mA	-	-	12V	-	-	-	100MHz	-	-	-	-	-	-	-	220	-	3.1Ohm	-	45V	0.4 V	-	-	-	-	-	-	-	-	-	-	-	No SVHC	ROHS3 Compliant	-
DMB54D0UV-7 233-375-DMB54D0UV-7 Diodes Incorporated : : - : 3200 1 : -
	Mfr. LMN400B01-7 Twicea 233-375-LMN400B01-7	Diodes Incorporated	Bipolar Transistors - Pre-Biased ARRAY TRANSISTOR SOT-26	16300	Min.:1 Mult.:1	19 Weeks	-	Surface Mount	Surface Mount	SOT-23-6	-	6	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	2015	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	Matte Tin (Sn)	150°C	-55°C	Load Switch	BUILT IN BIAS RESISTOR	-50V	400mA PNP 115mA	-	DUAL	GULL WING	260	-	-	115mA	40	LMN400	6	-	-	Not Qualified	-	-	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR	-	-	-	ENHANCEMENT MODE	-	-	-	SWITCHING	-	-	-	PNP Pre-Biased, N-Channel Pre-Biased	-	-	-	-	-	-	-	-	0.115A	2Ohm	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	0.3W	-	0.4A	70	-	-	-	-	0.3 V	5 pF	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
LMN400B01-7 233-375-LMN400B01-7 Diodes Incorporated : : - : 16300 1 : -
	Mfr. LMN200B02-7 Twicea 233-375-LMN200B02-7	Diodes Incorporated	MCU LOAD SWITCH 200MA SOT-363		Min.:1 Mult.:1	19 Weeks	-	Surface Mount	Surface Mount	6-TSSOP, SC-88, SOT-363	-	6	-	6.010099mg	-	-	-	-	-300mV	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	2009	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	Matte Tin (Sn)	150°C	-55°C	Load Switch	BUILT IN BIAS RESISTOR	-50V	200mA PNP 115mA N-Channel	200mW	DUAL	GULL WING	260	-	-	115mA	40	LMN200	6	-	-	-	-	PNP	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR	-	-	-	ENHANCEMENT MODE	-	-	-	SWITCHING	-	-	-	PNP Pre-Biased, N-Channel Pre-Biased	50V	200mA	-	-	-	-	-	200MHz	0.115A	2Ohm	-	-	-	METAL-OXIDE SEMICONDUCTOR	-50V	-	-5V	-	60	-	-	-	-	0.3 V	5 pF	-	-	-	-	-	-	1mm	2.2mm	1.35mm	No	-	ROHS3 Compliant	Lead Free
LMN200B02-7 233-375-LMN200B02-7 Diodes Incorporated : : - : - 1 : -
	Mfr. LMN200B01-7 Twicea 233-375-LMN200B01-7	Diodes Incorporated	PNP Transistor and N-MOSFET with Pull Down Resistor 6-Pin SOT-26 T/R		Min.:1 Mult.:1	19 Weeks	-	Surface Mount	Surface Mount	SOT-23-6	-	6	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	2006	-	e3	yes	Active	1 (Unlimited)	6	EAR99	-	Matte Tin (Sn)	150°C	-55°C	Load Switch	BUILT IN BIAS RESISTOR	-50V	200mA PNP 115mA N-Channel	-	DUAL	GULL WING	260	-	-	115mA	40	LMN200	6	-	-	Not Qualified	-	-	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR	-	-	-	ENHANCEMENT MODE	-	-	-	SWITCHING	-	-	-	PNP Pre-Biased, N-Channel Pre-Biased	-	-	-	-	-	-	-	-	0.115A	2Ohm	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	0.3W	-	0.2A	60	-	-	-	-	0.3 V	5 pF	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	Lead Free
LMN200B01-7 233-375-LMN200B01-7 Diodes Incorporated : : - : - 1 : -
	Mfr. DTM3A25P20NFDB-7 Twicea 233-375-DTM3A25P20NFDB-7	Diodes Incorporated	TRANSISTOR ARRAY U-DFN2020-6 T&R	98800	Min.:1 Mult.:1	16 Weeks	-	Surface Mount	Surface Mount	6-UDFN Exposed Pad	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	25V PNP 20 N-Channel	-	-	Tape & Reel (TR)	2016	-	e4	-	Active	1 (Unlimited)	-	EAR99	-	Nickel/Palladium/Gold (Ni/Pd/Au)	-	-	General Purpose	-	-	-	-	-	-	NOT SPECIFIED	-	-	3A	NOT SPECIFIED	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	PNP, N-Channel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
DTM3A25P20NFDB-7 233-375-DTM3A25P20NFDB-7 Diodes Incorporated : : - : 98800 1 : -
	Mfr. DMB54D0UV-13 Twicea 233-375-DMB54D0UV-13	Diodes	DIODE		Min.:1 Mult.:1	-	-	-	Surface Mount	SOT-563, SOT-666	-	-	SOT-563	-	-	-	-	DMB54	-	-	-	-	-	Diodes Incorporated	-	-	-	-	Bulk	-	-	-	-	-	-	Obsolete	-	-	-	-	-	-	45V PNP, 50V N-Channel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	General Purpose	-	-	100mA PNP, 160mA N-Channel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	PNP, N-Channel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMB54D0UV-13 233-375-DMB54D0UV-13 Diodes : : - : - 1 : -
	Mfr. A1015 Twicea 233-375-A1015	Diodes Incorporated	Transistor		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	124.00	DIODES INC	-	-	-	-	-	-	-	-	-	-	Active	-	-	20-90 %	-	Φ69* mm	-	42.54224/100	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	М42300 (analog), panel-mounted DC ammeter	-	-	-	-	-	-	-	-	-	-	-	35.5 (case) mm	compliant	-	-	-	-	-	-	-	-	-	SINGLE	vertical	-	-	-	-	-	-	-	-	-	PNP	-	-	-	-5 …+40 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150	-	-	-	-	-	-	-	-	50 A	-	1.5	-	81.3 mm	-	81.3 mm	-	-	-	-
A1015 233-375-A1015 Diodes Incorporated : : - : - 1 : -
	Mfr. 2N7002KW Twicea 233-375-2N7002KW	Diodes Incorporated	Description: Small Signal Field-Effect Transistor, 0.38A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,		Min.:1 Mult.:1	-	-	-	-	-	YES	-	-	-	3	SILICON	1	-	-	-	0.38 A	-	DIODES INC	-	-	-	150 °C	-55 °C	-	PLASTIC/EPOXY	-	RECTANGULAR	SMALL OUTLINE	Active	-	-	-	Yes	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	-	DUAL	GULL WING	-	-	compliant	-	-	-	-	-	R-PDSO-G3	-	-	-	SINGLE WITH BUILT-IN DIODE	-	-	-	ENHANCEMENT MODE	-	-	-	SWITCHING	-	-	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	2.3 Ω	-	-	60 V	METAL-OXIDE SEMICONDUCTOR	-	0.3 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7002KW 233-375-2N7002KW Diodes Incorporated : : - : - 1 : -
	Mfr. ZXM64N03X Twicea 233-375-ZXM64N03X	Diodes Incorporated	Description: Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MSOP-8		Min.:1 Mult.:1	-	-	-	-	-	YES	-	-	-	8	SILICON	-	-	-	-	3.9 A	-	DIODES INC	-	1	1	-	-	-	PLASTIC/EPOXY	SMALL OUTLINE, R-PDSO-G8	RECTANGULAR	SMALL OUTLINE	Obsolete	SOT	-	-	Yes	-	-	-	-	-	-	-	-	-	-	e3	Yes	-	-	-	EAR99	-	MATTE TIN	-	-	-	-	-	-	-	DUAL	GULL WING	-	-	unknown	-	-	-	8	-	R-PDSO-G8	Not Qualified	-	-	SINGLE WITH BUILT-IN DIODE	-	-	-	ENHANCEMENT MODE	-	-	-	SWITCHING	-	-	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	0.06 Ω	-	-	30 V	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ZXM64N03X 233-375-ZXM64N03X Diodes Incorporated : : - : - 1 : -
	Mfr. VN2222LL Twicea 233-375-VN2222LL	Diodes Incorporated	Description: Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3PIN		Min.:1 Mult.:1	-	-	-	-	-	NO	-	-	-	3	SILICON	1	-	-	DC and AC	0.15 A	-	DIODES INC	-	-	-	-	-	-	PLASTIC/EPOXY	CYLINDRICAL, O-PBCY-W3	ROUND	CYLINDRICAL	Obsolete	TO-92	-	-	-	-	-	583535/2000	-	-	11.10	-10...+60 °C	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	-	BOTTOM	WIRE	-	-	unknown	-	-	-	3	-	O-PBCY-W3	Not Qualified	-	-	SINGLE	-	-	-	ENHANCEMENT MODE	-	-	Automatic switch series L-MZ	-	-	-	N-CHANNEL	-	-	-	-	-	10 A	TO-92	-	-	-	7.5 Ω	-	-	60 V	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	125/250 (AC); 32 (DC) V	-	-	-	-	5 pF	-	-	-	-	-	50/60	-	-	-	-	-	-	-
VN2222LL 233-375-VN2222LL Diodes Incorporated : : - : - 1 : -
	Mfr. ZXMN10A11GFTC Twicea 233-375-ZXMN10A11GFTC	Diodes Incorporated	Small Signal Field-Effect Transistor, 1.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	97820	Min.:1 Mult.:1	-	-	-	-	-	YES	-	-	-	4	SILICON	-	-	-	-	1.3 A	-	DIODES INC	-	1	1	150 °C	-	-	PLASTIC/EPOXY	SMALL OUTLINE, R-PDSO-G4	RECTANGULAR	SMALL OUTLINE	Obsolete	-	-	-	Yes	-	-	-	-	-	-	-	-	-	-	e3	-	-	-	-	EAR99	-	MATTE TIN	-	-	-	-	-	-	-	DUAL	GULL WING	260	-	compliant	-	-	-	-	-	R-PDSO-G4	Not Qualified	-	-	SINGLE WITH BUILT-IN DIODE	-	-	-	ENHANCEMENT MODE	DRAIN	-	-	SWITCHING	-	-	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	0.6 Ω	-	-	100 V	METAL-OXIDE SEMICONDUCTOR	-	3.9 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ZXMN10A11GFTC 233-375-ZXMN10A11GFTC Diodes Incorporated : : - : 97820 1 : -
	Mfr. AF9903MSA Twicea 233-375-AF9903MSA	Diodes Incorporated	Transistor,		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	DIODES INC	-	-	-	-	-	-	-	,	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	-	-	-	-	-	compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AF9903MSA 233-375-AF9903MSA Diodes Incorporated : : - : - 1 : -
	Mfr. DMN33D8L-7 Twicea 233-375-DMN33D8L-7	Diodes Incorporated	Small Signal Field-Effect Transistor	32700	Min.:1 Mult.:1	-	-	-	-	-	YES	-	-	-	3	SILICON	-	-	-	-	0.2 A	-	DIODES INC	-	1	1	150 °C	-55 °C	-	PLASTIC/EPOXY	,	RECTANGULAR	SMALL OUTLINE	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	e3	-	-	-	-	EAR99	-	MATTE TIN	-	-	-	-	-	-	-	DUAL	GULL WING	-	-	unknown	-	-	-	-	MIL-STD-202	R-PDSO-G3	-	-	-	SINGLE WITH BUILT-IN DIODE	-	-	-	ENHANCEMENT MODE	-	-	-	SWITCHING	-	-	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	3 Ω	-	-	30 V	METAL-OXIDE SEMICONDUCTOR	-	0.52 W	-	-	-	-	-	-	-	-	10 pF	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN33D8L-7 233-375-DMN33D8L-7 Diodes Incorporated : : - : 32700 1 : -
	Mfr. BC857CW Twicea 233-375-BC857CW	Diodes Incorporated	Transistor		Min.:1 Mult.:1	-	-	-	-	-	YES	-	-	-	-	-	1	-	-	-	-	-	DIODES INC	-	-	-	150 °C	-	-	-	-	-	-	Obsolete	-	-	-	Yes	-	100 MHz	-	-	-	-	-	-	-	-	e0	-	-	-	-	EAR99	-	Tin/Lead (Sn/Pb)	-	-	-	-	-	-	-	-	-	-	-	compliant	-	-	-	-	-	-	-	-	-	SINGLE	-	-	-	-	-	-	-	-	-	-	PNP	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	0.2 W	-	0.1 A	420	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BC857CW 233-375-BC857CW Diodes Incorporated : : - : - 1 : -

Discrete Semiconductor Products

Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: DMB53D0UV-7,CTA2N1P-7-F,DMB53D0UDW-7,LMN400E01-7,DMB54D0UDW-7.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 85 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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Discrete Semiconductor Products