- Discrete Semiconductor Products
- Transistors - JFETs
| Package / Case | Factory Pack QuantityFactory Pack Quantity | Id - Continuous Drain Current | Maximum Drain Gate Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Moisture Sensitive | Mounting Styles | Pd - Power Dissipation | RoHS | Shipping Restrictions | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Vgs - Gate-Source Breakdown Voltage | Vgs th - Gate-Source Threshold Voltage | Packaging | Operating Frequency | Output Power | Transistor Type | Gain | |||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr.GTVA107001FC-V1-R0Twicea163-373-GTVA107001FC-V1-R0 | Cree |
RF JFET Transistors 700W, GaN HEMT, 50V, 0.9-1.2GHz, IM FET, Pill
| Min.:1 Mult.:1 | - | 50 | - | - | - | - | - | - | - | Details | - | - | - | - | - | Reel | - | - | HEMT | - | ||
| GTVA107001FC-V1-R0 | ||||||||||||||||||||||||||
![]() | Mfr.CGHV35400F1Twicea163-373-CGHV35400F1 | Cree |
RF JFET Transistors 400W, GaN HEMT, 50V, 2.9-3.5GHz, IM FET, Flange
| Min.:1 Mult.:1 | 440225 | 1 | 24 A | - | + 125 C | - 40 C | - | Flange Mount | - | Details | This product may require additional documentation to export from the United States. | N-Channel | 125 V | - 10 V, 2 V | 3 V | - | 2.9 GHz to 3.5 GHz | 400 W | HEMT | 11 dB | ||
| CGHV35400F1 | ||||||||||||||||||||||||||
![]() | Mfr.CMPA5259080STwicea163-373-CMPA5259080S | Cree |
RF JFET Transistors 80W, GaN MMIC Power Amplifier, 40V, 5.2-5.9GHz, QFN, 7x7mm
| Min.:1 Mult.:1 | QFN-48 | 50 | 4.8 A | - | + 225 C | - | Yes | SMD/SMT | - | Details | This product may require additional documentation to export from the United States. | N-Channel | 100 V | - 10 V, 2 V | - 3.1 V | Cut Tape | 5 GHz to 5.9 GHz | 112.9 W | HEMT | 21.4 dB | ||
| CMPA5259080S | ||||||||||||||||||||||||||
![]() | Mfr.CGB5P-CENTwicea163-373-CGB5P-CEN | Cree |
RF JFET Transistors Gate Biasing Assembly, GaN, 5-Pins, Center Pin Gate Control
| Min.:1 Mult.:1 | - | 1 | - | - | - | - | - | - | - | N | - | - | - | - | - | Bulk | - | - | HEMT | - | ||
| CGB5P-CEN | ||||||||||||||||||||||||||
![]() | Mfr.CGHV31500F1Twicea163-373-CGHV31500F1 | Cree |
RF JFET Transistors 500W, GaN HEMT, 50V, 2.7-3.1GHz,Long-pulse, Flange
| Min.:1 Mult.:1 | 440226-2 | 1 | 500 mA | - 2.7 V | + 75 C | - 40 C | - | Flange Mount | 418 W | N | This product may require additional documentation to export from the United States. | N-Channel | - | - | - | Tray | 2.7 GHz to 3.1 GHz | 57.9 dBm | HEMT | - | ||
| CGHV31500F1 | ||||||||||||||||||||||||||
![]() | Mfr.CGHV38375FTwicea163-373-CGHV38375F | Cree |
RF JFET Transistors 400W, GaN HEMT, 50V, 2.75-3.75GHz, IM FET, Flange
| 1
| Min.:1 Mult.:1 | 440226 | 1 | 24 A | - | + 125 C | - 40 C | - | Flange Mount | - | Details | This product may require additional documentation to export from the United States. | N-Channel | 125 V | - 10 V, 2 V | - | - | 2.75 GHz to 3.75 GHz | 400 W | HEMT | 11 dB | |
| CGHV38375F | ||||||||||||||||||||||||||
![]() | Mfr.CMPA2735030STwicea163-373-CMPA2735030S | Cree |
RF JFET Transistors 30W, GaN MMIC Power Amplifier, 50V, 2.7-3.5GHz, QFN, 5x5mm
| Min.:1 Mult.:1 | QFN-32 | 50 | 4.6 A | - | + 225 C | - | Yes | SMD/SMT | 32 W | Details | - | N-Channel | 150 V | - 10 V, 2 V | - 3 V | Cut Tape | 2.7 GHz to 3.5 GHz | 40.6 W | HEMT | 28.1 dB | ||
| CMPA2735030S |
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