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CMPA5259080S

Cree  CMPA5259080S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case QFN-48
Shipping Restrictions This product may require additional documentation to export from the United States.
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 100 V
Vgs - Gate-Source Breakdown Voltage - 10 V, 2 V
Id - Continuous Drain Current 4.8 A
Maximum Drain Gate Voltage -
Minimum Operating Temperature -
Maximum Operating Temperature + 225 C
Mounting Styles SMD/SMT
Moisture Sensitive Yes
Factory Pack QuantityFactory Pack Quantity 50
Vgs th - Gate-Source Threshold Voltage - 3.1 V
Packaging Cut Tape
Operating Frequency 5 GHz to 5.9 GHz
Output Power 112.9 W
Transistor Type HEMT
Gain 21.4 dB
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