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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Surface Mount | Housing material | Housing Material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Case | Color button/ housing | Dielectric strength | Drain Current-Max (ID) | Emitter type | Emitter Type | Expansion range | Gross weight | Gross Weight | Ihs Manufacturer | Indicator type | Indicator Type | Kind of memory | Kind of package | Manufacturer Package Code | Memory | Memory organisation | Mounting | Mounting diameter | Mounting Diameter | Nominal current | Nominal Current | Nominal voltage | Nominal Voltage | Number of Elements | Number of switching cycles (electrical) | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protected wire (cable) diameter | Rohs Code | Switching scheme | Teral type | Teral Type | Transition Frequency-Nom (fT) | Transport package size/quantity | Transport packaging size/quantity | Transport Packaging Size/Quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of integrated circuit | Operating temperature | Packaging | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Color | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Contact resistance | Configuration | Operating Mode | Case Connection | Clock frequency | Transistor Application | Polarity/Channel Type | Operating temperature range | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Rated voltage | Feedback Cap-Max (Crss) | Saturation Current | Diameter | Height | Width | Wall thickness |
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![]() | Mfr. Part #BD137-16Twicea Part #16431-375-BD137-16 | Comset Semiconductor |
Transistor
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| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | - | - | - | - | - | - | - | - | COMSET SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | 150 °C | - | - | , | - | - | Contact Manufacturer | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 8 W | 1.5 A | 100 | - | - | - | - | - | - | - | ||
| BD137-16 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BD137-16Twicea Part #3717-375-BD137-16 | WEITRON INTERNATIONAL CO., LTD. |
Transistor
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | WEITRON TECHNOLOGY CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | , | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BD137-16 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BD137-16Twicea Part #318-375-BD137-16 | Freescale Semiconductor |
TRANSISTOR,BJT,NPN,60V V(BR)CEO,1.5A I(C),TO-225AA
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| Min.:1 Mult.:1 | - | NO | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MOTOROLA SEMICONDUCTOR PRODUCTS | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | 150 °C | - | - | , | - | - | Obsolete | - | - | No | - | - | - | 250 MHz | - | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 13 W | 1.5 A | 100 | - | - | - | - | - | - | - | ||
| BD137-16 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI7850ADP-T1-GE3Twicea Part #534-375-SI7850ADP-T1-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor,
Datasheet
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| 5442
In Stock
| Min.:1 Mult.:1 | 28 Weeks | YES | - | - | 5 | SILICON | 1 | - | - | - | 12 A | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | SOP-8 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | - | Yes | - | - | - | - | - | - | - | 40 ns | 55 ns | - | - | - | - | - | EAR99 | - | Pure Matte Tin (Sn) - annealed | - | - | - | DUAL | FLAT | 260 | compliant | 40 | - | - | R-PDSO-F5 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | 0.0195 Ω | 40 A | 60 V | 11.3 mJ | METAL-OXIDE SEMICONDUCTOR | 35.7 W | - | - | - | 14 pF | 1 | - | - | - | - | |
| SI7850ADP-T1-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRFP9140Twicea Part #699-375-IRFP9140 | Rochester Electronics LLC |
19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
Datasheet
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| Min.:1 Mult.:1 | - | NO | - | - | 3 | SILICON | 1 | FBGA96 | - | - | 19 A | - | - | - | 0.5 g | - | ROCHESTER ELECTRONICS LLC | - | - | DDR4, | reel | - | 8Gb SDRAM | 512Mx16bit | SMD | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | No | - | - | - | - | - | - | - | - | - | DRAM memory | 0...95°C | - | e0 | No | - | - | TIN LEAD | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | R-PSFM-T3 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | 1.6GHz | SWITCHING | P-CHANNEL | - | - | TO-247 | 0.2 Ω | 76 A | 100 V | 960 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | NOT SPECIFIED | - | - | - | - | ||
| IRFP9140 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI4488DY-T1-E3Twicea Part #534-375-SI4488DY-T1-E3 | Vishay Intertechnologies |
Description: Power Field-Effect Transistor,
Datasheet
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| 600
In Stock
| Min.:1 Mult.:1 | 13 Weeks | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | - | - | - | - | - | 260 | compliant | 30 | - | - | - | Not Qualified | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | |
| SI4488DY-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SQ1922EEH-T1_GE3Twicea Part #534-375-SQ1922EEH-T1_GE3 | Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 0.84A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
Datasheet
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| 120000
In Stock
| Min.:1 Mult.:1 | 15 Weeks | YES | - | - | 6 | SILICON | 2 | - | - | - | 0.84 A | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | -55 °C | PLASTIC/EPOXY | SC-70, 6 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | TIN | - | - | - | DUAL | GULL WING | - | unknown | - | - | AEC-Q101 | R-PDSO-G6 | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | - | N-CHANNEL | - | - | - | 0.6 Ω | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | - | |
| SQ1922EEH-T1_GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BUK98150-55A/CUFTwicea Part #17568-375-BUK98150-55A/CUF | NXP Semiconductors |
Description: N-channel TrenchMOS logic level FET SC-73 4-Pin
Datasheet
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| 4012
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | 4 | SILICON | 1 | - | white/ black | 1500 V | 5.5 A | - | - | - | 5.35 | - | NXP SEMICONDUCTORS | - | - | - | - | SOT223 | - | - | - | - | - | - | - | - | - | - | ≥10000 | - | - | PLASTIC/EPOXY | SC-73, 4 PIN | RECTANGULAR | SMALL OUTLINE | Transferred | SC-73 | - | Yes | OFF-ON (2P) | - | - | - | - | 48*31.5*27/2000 | - | - | - | - | - | - | e3 | - | EAR99 | PBS101 series pushbutton switch, V-type terminals | Tin (Sn) | - | - | 8541.29.00.75 | DUAL | GULL WING | 260 | compliant | 30 | 4 | AEC-Q101; IEC-60134 | R-PDSO-G4 | - | ≤50 | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | -25…+85 °C | 4/ 2 | - | 0.161 Ω | 22 A | 55 V | 22 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | 125/ 250 (AC) | - | 1 | button - 5.8 | 13.6 | 23.5 | - | |
| BUK98150-55A/CUF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRFH7932TRPBFTwicea Part #3717-375-IRFH7932TRPBF | International Rectifier |
Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Datasheet
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| 1350
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | 3 | SILICON | 1 | - | - | - | 24 A | - | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | - | DUAL | NO LEAD | 260 | compliant | 30 | 8 | - | R-PDSO-N3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | 0.0033 Ω | 192 A | 30 V | 14 mJ | METAL-OXIDE SEMICONDUCTOR | 3.4 W | - | - | - | - | - | - | - | - | - | |
| IRFH7932TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #S8050DTwicea Part #16028-375-S8050D | Jiangsu Changjiang Electronics Technology Co Ltd |
Transistor
Datasheet
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| Min.:1 Mult.:1 | - | NO | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Contact Manufacturer | - | - | Yes | - | - | - | 150 MHz | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | SINGLE | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.625 W | 0.5 A | 160 | - | - | - | - | - | - | - | ||
| S8050D 16028-375-S8050D Jiangsu Changjiang Electronics Technology Co Ltd
RoHS :
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![]() | Mfr. Part #FDS6912ATwicea Part #699-375-FDS6912A | Rochester Electronics LLC |
6000mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
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| Min.:1 Mult.:1 | - | YES | nickel-plated brass | - | 8 | SILICON | 2 | - | - | - | 6 A | point flat | - | - | 19.13 | - | ROCHESTER ELECTRONICS LLC | GQ19 series antivandal indicator | - | - | - | - | - | - | - | 19 mm | - | 15 mA | - | 3-36 V | - | - | - | - | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Active | SOT | - | Yes | - | 2S (screw)min | - | - | - | 62*27.5*28/150 | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | blue | LOGIC LEVEL COMPATIBLE | - | DUAL | GULL WING | 260 | unknown | 30 | 8 | - | R-PDSO-G8 | COMMERCIAL | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.028 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | - | ||
| FDS6912A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI7846DP-T1-E3Twicea Part #534-375-SI7846DP-T1-E3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Datasheet
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| 2930
In Stock
| Min.:1 Mult.:1 | - | YES | nickel-plated brass | - | 5 | SILICON | 1 | - | - | - | 4 A | dot round | - | - | 5.80 | - | VISHAY INTERTECHNOLOGY INC | Vandal-proof indicator GQ8 series | - | - | - | - | - | - | - | 8 mm | - | 15 mA | - | 12-24 V | - | - | - | 150 °C | - | UNSPECIFIED | ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | 62*27.5*28/200 | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) - annealed | blue | FAST SWITCHING | - | DUAL | C BEND | 260 | compliant | 30 | - | - | R-XDSO-C5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | 0.05 Ω | 50 A | 150 V | - | METAL-OXIDE SEMICONDUCTOR | 5.2 W | - | - | - | - | 1 | - | - | - | - | |
| SI7846DP-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SQ2319ADS-T1_GE3Twicea Part #534-375-SQ2319ADS-T1_GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor,
Datasheet
Compare
| 66038
In Stock
| Min.:1 Mult.:1 | 15 Weeks | YES | - | Nickel-Plated Brass | 3 | SILICON | 1 | - | - | - | 4.6 A | - | Flat Point | - | - | 5.17 | VISHAY INTERTECHNOLOGY INC | - | GQ8 Series Vandal-Proof Indicator | - | - | - | - | - | - | - | 8 mm | - | 15 mA | - | 12-24 V | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | End Of Life | - | - | Yes | - | - | Flexible Leadsmin | - | - | - | 28*27*31/300 | 54 ns | 36 ns | - | - | - | e3 | - | EAR99 | - | MATTE TIN | Red | - | - | DUAL | GULL WING | 260 | unknown | 30 | - | AEC-Q101 | R-PDSO-G3 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | P-CHANNEL | - | - | TO-236AB | 0.075 Ω | 18 A | 40 V | 8.4 mJ | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | - | 70 pF | 1 | - | - | - | - | |
| SQ2319ADS-T1_GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SIHG22N60E-GE3Twicea Part #534-375-SIHG22N60E-GE3 | Vishay Intertechnologies |
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Datasheet
Compare
| 8600
In Stock
| Min.:1 Mult.:1 | - | NO | nickel-plated brass | - | 3 | SILICON | 1 | - | - | - | 21 A | point flat | - | - | 3.55 | - | VISHAY INTERTECHNOLOGY INC | GQ6 series vandal-resistant indicator | - | - | - | - | - | - | - | 6 mm | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | Yes | - | flexible leadsmin | - | - | - | 62*27.5*28/200 | - | - | - | - | - | - | - | - | EAR99 | - | - | red | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | NOT SPECIFIED | - | - | R-PSFM-T3 | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | 15 mA | TO-247AC | 0.18 Ω | 56 A | 600 V | 367 mJ | METAL-OXIDE SEMICONDUCTOR | 227 W | - | - | 12-24 V | - | - | - | - | - | - | |
| SIHG22N60E-GE3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #AP30T10GH-HFTwicea Part #2957-375-AP30T10GH-HF | Advanced Power Electronics Corp |
TRANSISTOR 19 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
Datasheet
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| 3695
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | 2 | SILICON | 1 | - | - | - | 19 A | - | - | - | - | - | ADVANCED POWER ELECTRONICS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | TO-252 | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | compliant | NOT SPECIFIED | 4 | - | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | TO-252 | 0.055 Ω | 60 A | 100 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | |
| AP30T10GH-HF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SI4866DY-T1-E3Twicea Part #534-375-SI4866DY-T1-E3 | Vishay Intertechnologies |
Description: Small Signal Field-Effect Transistor, 11A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Datasheet
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| 76325
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | - | SILICON | 1 | - | - | - | 11 A | - | - | - | - | - | VISHAY INTERTECHNOLOGY INC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | -55 °C | - | - | - | - | End Of Life | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | - | - | - | 260 | not_compliant | 30 | - | - | - | - | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.0055 Ω | - | 12 V | - | METAL-OXIDE SEMICONDUCTOR | 3 W | - | - | - | - | 1 | - | - | - | - | |
| SI4866DY-T1-E3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BCV27Twicea Part #16059-375-BCV27 | Philips Semiconductors |
Transistor
Datasheet
Compare
| 3000
In Stock
| Min.:1 Mult.:1 | - | YES | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PHILIPS SEMICONDUCTORS | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Transferred | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | EAR99 | - | MATTE TIN | - | - | - | - | - | 260 | unknown | - | - | - | - | - | - | DARLINGTON | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.25 W | 0.3 A | 20000 | - | - | - | - | - | - | - | |
| BCV27 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #IRF7343TRPBFTwicea Part #3717-375-IRF7343TRPBF | International Rectifier |
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | - | 8 | SILICON | 2 | - | - | - | 4.7 A | - | - | - | - | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | HIGH RELIABILITY | - | DUAL | GULL WING | 260 | compliant | 30 | - | - | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | - | MS-012AA | 0.05 Ω | 38 A | 55 V | 72 mJ | METAL-OXIDE SEMICONDUCTOR | 2 W | - | - | - | - | 1 | - | - | - | - | ||
| IRF7343TRPBF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #FDMS7660Twicea Part #699-375-FDMS7660 | Rochester Electronics LLC |
25A, 30V, 0.0028ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | - | 5 | SILICON | 1 | - | - | - | 25 A | - | - | - | - | - | ROCHESTER ELECTRONICS LLC | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | ROHS COMPLIANT, POWER 56, 8 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | Yes | - | - | MATTE TIN | - | - | - | DUAL | NO LEAD | 260 | unknown | 30 | 240 | - | R-PDSO-N5 | COMMERCIAL | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | - | SWITCHING | N-CHANNEL | - | - | MO-240AA | 0.0028 Ω | 150 A | 30 V | 128 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | 1 | - | - | - | - | ||
| FDMS7660 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #BCV27Twicea Part #16045-375-BCV27 | Secos Corporation |
Description: Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | 2-7 mm | 491.80 | - | SECOS CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Active | - | 2 mm | Yes | - | - | - | - | - | 60*32.5*43.5/10 | - | - | - | - | - | coil, 200 m | - | - | EAR99 | Black PET protective braid | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.0 mm | - | - | 0.5 mm | ||
| BCV27 |
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