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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Number of Terminals | Transistor Element Material | Exterior Housing Material | Ihs Manufacturer | Manufacturer Package Code | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Highest Frequency Band |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. Part #PTF10147Twicea Part #7862-375-PTF10147 | Ericsson |
Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20244, 3 PIN
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| Min.:1 Mult.:1 | YES | 2 | SILICON | - | ERICSSON POWER MODULES AB | CASE 20244 | 1 | 200 °C | CERAMIC, METAL-SEALED COFIRED | SMALL OUTLINE, R-CDSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | No | e0 | EAR99 | TIN LEAD | HIGH RELIABILITY | DUAL | GULL WING | - | unknown | - | 3 | R-CDSO-G2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 46 W | ULTRA HIGH FREQUENCY BAND | ||
| PTF10147 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PTF102015Twicea Part #7862-375-PTF102015 | Ericsson |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20265, 2 PIN
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| Min.:1 Mult.:1 | YES | 2 | SILICON | - | ERICSSON POWER MODULES AB | - | 1 | 150 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | e0 | EAR99 | TIN LEAD | HIGH RELIABILITY | DUAL | FLAT | - | unknown | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 109 W | S BAND | ||
| PTF102015 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PTF10020Twicea Part #7862-375-PTF10020 | Ericsson |
Description: RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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| Min.:1 Mult.:1 | YES | 4 | SILICON | - | ERICSSON POWER MODULES AB | - | 2 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | EAR99 | - | - | DUAL | FLAT | - | unknown | - | - | R-CDFM-F4 | Not Qualified | COMMON SOURCE, 2 ELEMENTS | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | - | ULTRA HIGH FREQUENCY BAND | ||
| PTF10020 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PTF10111Twicea Part #7862-375-PTF10111 | Ericsson |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 20222, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | YES | 2 | SILICON | - | ERICSSON POWER MODULES AB | CASE 20222 | 1 | 200 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Transferred | No | - | EAR99 | - | HIGH RELIABILITY | DUAL | FLAT | NOT SPECIFIED | unknown | NOT SPECIFIED | 3 | R-CDFM-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 36 W | L BAND | ||
| PTF10111 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PTF10125Twicea Part #7862-375-PTF10125 | Ericsson |
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 20250, 4 PIN
Datasheet
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| Min.:1 Mult.:1 | YES | 4 | SILICON | 2 | ERICSSON POWER MODULES AB | - | - | 200 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F4 | RECTANGULAR | FLANGE MOUNT | Obsolete | No | e0 | EAR99 | TIN LEAD | HIGH RELIABILITY | DUAL | FLAT | - | unknown | - | 4 | R-CDFM-F4 | Not Qualified | COMMON SOURCE, 2 ELEMENTS | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 440 W | L BAND | ||
| PTF10125 | |||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #PTE10048Twicea Part #7862-375-PTE10048 | Ericsson |
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | YES | 2 | SILICON | - | ERICSSON POWER MODULES AB | - | 1 | - | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | EAR99 | - | - | DUAL | FLAT | - | unknown | - | - | R-CDFM-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | - | S BAND | ||
| PTE10048 |
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