- Discrete Semiconductor Products
- Transistors - Special Purpose
| Surface Mount | Number of Terminals | Transistor Element Material | Drain Current-Max (ID) | Ihs Manufacturer | Number of Elements | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | Terminal Position | Terminal Form | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | DS Breakdown Voltage-Min | FET Technology | Highest Frequency Band | Power Gain-Min (Gp) | |||||||
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  | Mfr.KGF1256BTwicea4165-375-KGF1256B | OKI Electric Industry Co Ltd |
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, SOP-4
| 23780
| Min.:1 Mult.:1 | YES | 4 | GALLIUM ARSENIDE | 0.36 A | OKI ELECTRIC INDUSTRY CO LTD | 1 | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOT | - | EAR99 | - | LOW NOISE | DUAL | GULL WING | unknown | 4 | R-PDSO-G4 | Not Qualified | SINGLE WITH BUILT-IN RESISTOR AND CAPACITOR | DEPLETION MODE | - | AMPLIFIER | N-CHANNEL | 7 V | JUNCTION | L BAND | 14 dB | |
| KGF1256B | |||||||||||||||||||||||||||||||||||||
 | Mfr.KGF1312Twicea4165-375-KGF1312 | OKI Electric Industry Co Ltd |
Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, PLASTIC PACKAGE-3
| Min.:1 Mult.:1 | YES | 3 | SILICON | 2 A | OKI ELECTRIC INDUSTRY CO LTD | 1 | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | e6 | EAR99 | TIN BISMUTH | - | SINGLE | FLAT | unknown | 3 | R-PSSO-F3 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 10 V | JUNCTION | ULTRA HIGH FREQUENCY BAND | - | ||
| KGF1312 | |||||||||||||||||||||||||||||||||||||
| | Mfr.KGF1323FTwicea4165-375-KGF1323F | OKI Electric Industry Co Ltd |
Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, 3PMMP, 3 PIN
| Min.:1 Mult.:1 | YES | 3 | GALLIUM ARSENIDE | 3 A | OKI ELECTRIC INDUSTRY CO LTD | 1 | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | EAR99 | - | - | SINGLE | FLAT | unknown | 3 | R-PSSO-F3 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 10 V | JUNCTION | ULTRA HIGH FREQUENCY BAND | - | ||
| KGF1323F | |||||||||||||||||||||||||||||||||||||
| | Mfr.KGF1922Twicea4165-375-KGF1922 | OKI Electric Industry Co Ltd |
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC PACKAGE-3
| Min.:1 Mult.:1 | YES | 3 | SILICON | 1 A | OKI ELECTRIC INDUSTRY CO LTD | 1 | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | EAR99 | - | - | SINGLE | FLAT | unknown | 3 | R-PSSO-F3 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 16 V | HIGH ELECTRON MOBILITY | S BAND | - | ||
| KGF1922 |
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