- Discrete Semiconductor Products
- Transistors - Special Purpose
| Surface Mount | Housing material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Application area | Case | Characteristic | Dielectric strength | Drain Current-Max (ID) | Gross weight | Gross Weight | Ihs Manufacturer | Kind of architecture | Kind of package | Maximum current | Memory | Mounting | Mounting hole | Mounting method | Name | Nominal voltage | Number of Elements | Number of 12bit A/D converters | Number of 12bit D/A converters | Number of 16bit timers | Number of 32bit timers | Number of inputs/outputs | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Protection degree | Purpose | Relative humidity | Rohs Code | Service life | Shaft type | Switching scheme | Transition Frequency-Nom (fT) | Transport package size/quantity | Transport packaging size/quantity | Transport Packaging size/quantity | Turn-off Time-Max (toff) | Turn-on Time-Max (ton) | Type of integrated circuit | Operating temperature | JESD-609 Code | ECCN Code | Type | Terminal Finish | Color | Additional Feature | HTS Code | Terminal Position | Terminal Form | Depth | Reach Compliance Code | JESD-30 Code | Qualification Status | Number of contacts | Contact resistance | Configuration | Insulation resistance | Note | Operating Mode | Case Connection | Clock frequency | Switch type | Family | Transistor Application | Polarity/Channel Type | Resolution | Operating temperature range | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Rotation angle | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Dissipation Ambient-Max | Saturation Current | Power Gain-Min (Gp) | Degree of protection | Height | Width | |||||||
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  | Mfr.BC141Twicea4094-375-BC141 | National Semiconductor Corporation |
Description: TRANSISTOR,BJT,NPN,60V V(BR)CEO,1A I(C),TO-39
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | 150 °C | - | - | - | - | Obsolete | - | - | - | No | - | - | - | 50 MHz | - | - | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | compliant | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.8 W | - | 1 A | 40 | - | - | - | - | - | - | - | - | ||
| BC141 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.2N5484Twicea4094-375-2N5484 | National Semiconductor Corporation |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | - | ROUND | CYLINDRICAL | Transferred | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | BOTTOM | THROUGH-HOLE | - | compliant | O-PBCY-T3 | Not Qualified | - | - | SINGLE | - | - | DEPLETION MODE | - | - | - | - | SWITCHING | N-CHANNEL | - | - | - | TO-92 | - | - | - | JUNCTION | 0.31 W | - | - | - | 1 pF | ULTRA HIGH FREQUENCY BAND | - | - | 16 dB | - | - | - | ||
| 2N5484 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.BC177Twicea4094-375-BC177 | National Semiconductor Corporation |
TRANSISTOR,BJT,PNP,45V V(BR)CEO,200MA I(C),TO-206AA
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | 175 °C | - | - | - | - | Obsolete | - | - | - | No | - | - | - | 190 MHz | - | - | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | compliant | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | 0.6 W | - | 0.2 A | 120 | - | - | - | - | - | - | - | - | ||
| BC177 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.BC109CTwicea4094-375-BC109C | National Semiconductor Corporation |
TRANSISTOR,BJT,NPN,20V V(BR)CEO,200MA I(C),TO-18
| Min.:1 Mult.:1 | NO | plastic | - | - | 1 | for cars | - | - | - | - | 170.50 | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | 12 / 24 V | - | - | - | - | - | - | 175 °C | - | - | - | - | Obsolete | - | - | - | No | - | - | - | 150 MHz | - | 48*31.5*22.5/40 | - | - | - | - | - | e0 | EAR99 | Splitter plug / 2x sockets | Tin/Lead (Sn/Pb) | black | - | - | - | - | - | compliant | - | - | 2+2x2 | - | SINGLE | - | cable length 30 cm | - | - | - | - | - | - | NPN | - | - | 5 A | - | - | - | - | - | 0.6 W | - | 0.2 A | 420 | - | - | - | - | - | - | - | - | ||
| BC109C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.NDS352APTwicea4094-375-NDS352AP | National Semiconductor Corporation |
Description: Small Signal Field-Effect Transistor, 0.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
| Min.:1 Mult.:1 | YES | - | 3 | SILICON | 1 | - | - | - | - | 0.9 A | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | DUAL | GULL WING | - | compliant | R-PDSO-G3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | - | - | - | SWITCHING | P-CHANNEL | - | - | - | TO-236AB | 0.3 Ω | - | 30 V | METAL-OXIDE SEMICONDUCTOR | 0.5 W | - | - | - | - | - | 0.46 W | - | - | - | - | - | ||
| NDS352AP | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.MMBF5461Twicea4094-375-MMBF5461 | National Semiconductor Corporation |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236AB
| Min.:1 Mult.:1 | YES | plastic | 3 | SILICON | 1 | - | - | pusher travel PTmax = 2 mm | 1500 (50 Hz, 1 min.) between contacts V | - | 69.00 | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | AC: 250 V | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | IP64 | - | - | No | - | - | ON - (ON), SPDT (1 Form C) | - | 46*24.5*37.5/200 | - | - | - | - | - | - | e0 | EAR99 | Railway switch from AZ series with short pusher | Tin/Lead (Sn/Pb) | - | - | - | DUAL | GULL WING | 49.1 (housing + pusher) mm | unknown | R-PDSO-G3 | Not Qualified | - | ≤15 (at 6…8 V DC) mOhm | SINGLE | ≥100 (at U=dc 500 V) Mohm | - | DEPLETION MODE | - | - | - | - | - | P-CHANNEL | - | -20...+60 °C | 10 A | TO-236AB | - | - | - | JUNCTION | 0.35 W | - | - | - | 2 pF | - | - | - | - | - | housing - 54 mm | 21.0 mm | ||
| MMBF5461 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.MMBF5484Twicea4094-375-MMBF5484 | National Semiconductor Corporation |
Description: RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
| Min.:1 Mult.:1 | YES | plastic | 3 | SILICON | 1 | - | - | lever travel - 5.0mm | 1500 (50Hz, 1min) between contacts V | - | - | 63.10 | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | AC: 250 V | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | No | - | - | ON - (ON), SPDT (1 Form C) | - | - | - | 46*24.5*37.5/200 | - | - | - | - | e0 | EAR99 | RUICHI AZ series lever track switch with rotating roller (short type) | Tin/Lead (Sn/Pb) | - | - | - | DUAL | GULL WING | in assembly - 77 mm | unknown | R-PDSO-G3 | Not Qualified | - | ≤15 (at 6…8V DC) mΩ | SINGLE | ≥100 (at Uinsp.dc=500V) MΩ | - | DEPLETION MODE | - | - | - | - | AMPLIFIER | N-CHANNEL | - | -20...+60 °C | 10 A | TO-236AB | - | - | - | JUNCTION | 0.225 W | - | - | - | 1 pF | VERY HIGH FREQUENCY BAND | - | - | 16 dB | IP64 | housing - 54 mm | 21.4 mm | ||
| MMBF5484 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.NDT3055LTwicea4094-375-NDT3055L | National Semiconductor Corporation |
Power Field-Effect Transistor, 3.7A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261
| Min.:1 Mult.:1 | YES | - | 4 | SILICON | 1 | - | - | - | - | 3.7 A | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | No | - | - | - | - | - | - | - | 70 ns | 40 ns | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | DUAL | GULL WING | - | compliant | R-PDSO-G4 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | DRAIN | - | - | - | SWITCHING | N-CHANNEL | - | - | - | TO-261 | 0.12 Ω | 25 A | 60 V | METAL-OXIDE SEMICONDUCTOR | 3 W | - | - | - | - | - | 1.1 W | - | - | - | - | - | ||
| NDT3055L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IRFZ48Twicea4094-375-IRFZ48 | National Semiconductor Corporation |
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | 1 | - | - | - | - | 50 A | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | R-PSFM-T3 | Not Qualified | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | - | - | N-CHANNEL | - | - | - | TO-220AB | 0.018 Ω | - | 60 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 150 W | - | - | - | - | - | ||
| IRFZ48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.NDS355ANTwicea4094-375-NDS355AN | National Semiconductor Corporation |
Description: Small Signal Field-Effect Transistor, 0.0016A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Min.:1 Mult.:1 | YES | - | 3 | SILICON | 1 | - | VFQFPN68 | - | - | 0.0016 A | 0.5 g | - | NATIONAL SEMICONDUCTOR CORP | Cortex M33 | in-tray | - | 640kB SRAM | SMD | - | - | - | - | - | 16 | 2 | 18 | 2 | 53 | 150 °C | PLASTIC/EPOXY | SUPERSOT-3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | Yes | - | - | - | - | - | - | - | - | - | STM32 ARM microcontroller | -40...85°C | e3 | EAR99 | - | MATTE TIN | - | LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | DUAL | GULL WING | - | compliant | R-PDSO-G3 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | - | ENHANCEMENT MODE | - | 250MHz | - | STM32H5 | SWITCHING | N-CHANNEL | - | - | - | - | 0.1 Ω | - | 30 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 0.5 W | 1 | - | - | - | - | ||
| NDS355AN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.2N3070Twicea4094-375-2N3070 | National Semiconductor Corporation |
TRANSISTOR,JFET,N-CHANNEL,500UA I(DSS),TO-18
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 200 °C | - | , | - | - | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | JUNCTION | 0.35 W | - | - | - | - | - | - | - | - | - | - | - | ||
| 2N3070 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.NA31Twicea4094-375-NA31 | National Semiconductor Corporation |
NA31
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | , | - | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| NA31 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.BCP54Twicea4094-375-BCP54 | National Semiconductor Corporation |
TRANSISTOR,BJT,NPN,45V V(BR)CEO,1A I(C),SOT-223
| Min.:1 Mult.:1 | YES | - | - | - | 1 | - | - | - | - | - | 3.85 | - | NATIONAL SEMICONDUCTOR CORP | - | - | 0.5…5mA/channel; common output - 0.5…10mA | - | - | Ф7 mm | PCB mount, vertical position | RUICHI EC12S incremental two-channel encoder with switch | 5 V | - | - | - | - | - | - | 150 °C | - | - | - | - | Obsolete | - | for determining speed and direction of rotation; angle of rotation; e.g. as a control knob | 25…85 % | No | 15000 cycles | with flat; diameter - 6mm; length L - 10mm; material - plastic | - | - | - | 33*29*34/1000 | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | 13.75 (housing) mm | unknown | - | - | - | - | SINGLE | - | - | - | - | - | SPST NO - normally open contact | - | - | NPN | 12 detents, 12 pulses (12 PPR) | -10…+70 °C | - | - | - | - | - | - | 1.5 W | 360 ° | 1 A | 40 | - | - | - | - | - | - | 14 (excluding housing) mm | 13 (housing) mm | ||
| BCP54 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.2N5906Twicea4094-375-2N5906 | National Semiconductor Corporation |
Description: TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78, FET General Purpose Small Signal
| Min.:1 Mult.:1 | NO | - | 7 | SILICON | - | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | 150 °C | METAL | CYLINDRICAL, O-MBCY-W7 | ROUND | CYLINDRICAL | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | EAR99 | - | TIN LEAD | - | - | - | BOTTOM | WIRE | - | unknown | O-MBCY-W7 | Not Qualified | - | - | SEPARATE, 2 ELEMENTS | - | - | DEPLETION MODE | - | - | - | - | - | N-CHANNEL | - | - | - | TO-78 | - | - | - | JUNCTION | 0.5 W | - | - | - | - | - | - | - | - | - | - | - | ||
| 2N5906 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.PN3962Twicea4094-375-PN3962 | National Semiconductor Corporation |
Description: TRANSISTOR,BJT,PNP,60V V(BR)CEO,200MA I(C),TO-92
| Min.:1 Mult.:1 | NO | - | - | - | - | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | 150 °C | - | , | - | - | Obsolete | - | - | - | No | - | - | - | 40 MHz | - | - | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | unknown | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | 0.625 W | - | 0.2 A | 100 | - | - | - | - | - | - | - | - | ||
| PN3962 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.NDP610BELTwicea4094-375-NDP610BEL | National Semiconductor Corporation |
Description: Power Field-Effect Transistor, 24A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | - | 24 A | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | R-PSFM-T3 | Not Qualified | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | - | - | N-CHANNEL | - | - | - | TO-220AB | 0.08 Ω | - | 100 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 100 W | - | - | - | - | - | ||
| NDP610BEL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.NDP408AELTwicea4094-375-NDP408AEL | National Semiconductor Corporation |
Power Field-Effect Transistor, 11A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | - | 11 A | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | PLASTIC/EPOXY | TO-220, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | R-PSFM-T3 | Not Qualified | - | - | SINGLE | - | - | ENHANCEMENT MODE | - | - | - | - | - | N-CHANNEL | - | - | - | TO-220AB | 0.16 Ω | - | 80 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | 40 W | - | - | - | - | - | ||
| NDP408AEL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.PF5101Twicea4094-375-PF5101 | National Semiconductor Corporation |
Description: TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, FET General Purpose Small Signal
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | CYLINDRICAL, O-PBCY-T3 | ROUND | CYLINDRICAL | Obsolete | - | - | - | No | - | - | - | - | - | - | - | - | - | - | - | e0 | EAR99 | - | TIN LEAD | - | LOW NOISE | - | BOTTOM | THROUGH-HOLE | - | unknown | O-PBCY-T3 | Not Qualified | - | - | SINGLE | - | - | DEPLETION MODE | - | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | TO-92 | - | - | - | JUNCTION | 0.31 W | - | - | - | - | - | - | - | - | - | - | - | ||
| PF5101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.BCY59IXTwicea4094-375-BCY59IX | National Semiconductor Corporation |
Description: TRANSISTOR,BJT,NPN,45V V(BR)CEO,200MA I(C),TO-206AA
| Min.:1 Mult.:1 | NO | - | - | - | 1 | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | - | - | - | Obsolete | - | - | - | No | - | - | - | 125 MHz | - | - | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | compliant | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | NPN | - | - | - | - | - | - | - | - | 0.6 W | - | 0.2 A | - | - | - | - | - | - | - | - | - | ||
| BCY59IX | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.BC160Twicea4094-375-BC160 | National Semiconductor Corporation |
Description: TRANSISTOR,BJT,PNP,40V V(BR)CEO,1A I(C),TO-205AD
| Min.:1 Mult.:1 | NO | - | - | - | 1 | - | - | - | - | - | - | - | NATIONAL SEMICONDUCTOR CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | - | - | - | - | Obsolete | - | - | - | No | - | - | - | 50 MHz | - | - | - | - | - | - | - | e0 | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | compliant | - | - | - | - | SINGLE | - | - | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | 3.7 W | - | 1 A | 40 | - | - | - | - | - | - | - | - | ||
| BC160 |
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