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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Factory Lead Time | Contact plating | Contact Plating | Mount | Mounting Type | Package / Case | Surface Mount | Number of pins | Number of Pins | Material | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Cable cross-section | Capacitors series | Case - inch | Case - mm | Collector-Emitter Breakdown Voltage | Collector-Emitter Saturation Voltage | Connector | Connector pinout layout | Contacts pitch | Date Of Intro | Drain Current-Max (ID) | Electrical mounting | Equivalent | Gross weight | Gross Weight | hFEMin | Ihs Manufacturer | Kind of capacitor | Kind of connector | Melting Temperature | Moisture Sensitivity Levels | Mounting | Nominal voltage | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rohs Code | Row pitch | Soldering Temperature | Spatial orientation | Transition Frequency-Nom (fT) | Transport packaging size/quantity | Transport Packaging Size/Quantity | Type of capacitor | Type of connector | Operating temperature | Packaging | Published | Tolerance | JESD-609 Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Connector type | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Composition | Applications | Additional Feature | HTS Code | Capacitance | Voltage - Rated DC | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current rating | Current Rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Reference Standard | JESD-30 Code | Qualification Status | Dielectric | Polarity | Configuration | Element Configuration | Operating Mode | Power Dissipation | Case Connection | Transistor Application | Halogen Free | Polarity/Channel Type | Transistor Type | Collector Emitter Voltage (VCEO) | Max Collector Current | JEDEC-95 Code | Drain-source On Resistance-Max | Transition Frequency | Design | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Collector Base Voltage (VCBO) | Power Dissipation-Max (Abs) | Emitter Base Voltage (VEBO) | Collector Current-Max (IC) | DC Current Gain-Min (hFE) | Rated voltage | Feedback Cap-Max (Crss) | Profile | Power Dissipation Ambient-Max | Saturation Current | Operating voltage | Diameter | Height | Length | Width | Plating thickness | Radiation Hardening | REACH SVHC | RoHS Status | Flammability rating | Lead Free |
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  | Mfr. Part #BCV61CE6327HTSA1Twicea Part #376-375-BCV61CE6327HTSA1 | Infineon Technologies |
TRANSISTOR NPN DOUBLE SOT-143
Datasheet
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| 629
In Stock
| Min.:1 Mult.:1 | 4 Weeks | - | Tin | Surface Mount | Surface Mount | TO-253-4, TO-253AA | - | - | 4 | - | - | - | - | - | - | - | - | - | 30V | - | - | - | - | - | - | - | - | - | - | 110 | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | 2005 | - | e3 | Last Time Buy | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | - | - | - | 150°C | -65°C | - | Current Mirror | - | - | - | 30V | 300mW | - | GULL WING | - | - | - | 100mA | 250MHz | - | BCV61 | AEC-Q101 | - | - | - | NPN | - | Dual | - | 300mW | - | - | Not Halogen Free | - | 2 NPN, Base Collector Junction | 600mV | 100mA | - | - | 250MHz | - | - | - | - | - | 30V | - | 6V | - | 420 | - | - | - | - | - | - | - | - | - | 2.9mm | - | No | No SVHC | ROHS3 Compliant | - | Lead Free | |
| BCV61CE6327HTSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BCV61BE6327HTSA1Twicea Part #376-375-BCV61BE6327HTSA1 | Infineon Technologies |
Trans GP BJT NPN 30V 0.1A Automotive 4-Pin(3 Tab) SOT-143 T/R
Datasheet
Compare
| 55
In Stock
| Min.:1 Mult.:1 | 4 Weeks | - | - | Surface Mount | Surface Mount | TO-253-4, TO-253AA | - | - | 4 | - | - | - | - | - | - | - | - | - | - | 600mV | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | 2005 | - | e3 | Last Time Buy | 1 (Unlimited) | 4 | - | EAR99 | - | - | Tin (Sn) | 150°C | -65°C | - | Current Mirror | - | - | - | 30V | 300mW | DUAL | GULL WING | - | - | - | 100mA | 250MHz | - | BCV61 | AEC-Q101 | - | - | - | NPN | - | - | - | 300mW | - | - | Not Halogen Free | - | 2 NPN, Base Collector Junction | 5V | 100mA | - | - | 250MHz | - | - | - | - | - | 30V | - | 6V | - | 200 | - | - | - | - | - | - | - | 900μm | 2.9mm | 1.3mm | - | No | - | ROHS3 Compliant | - | Lead Free | |
| BCV61BE6327HTSA1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IMW65R048M1HTwicea Part #376-375-IMW65R048M1H | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
Compare
| 6
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | NO | - | - | - | - | 3 | SILICON CARBIDE | 1 | - | - | - | - | - | - | - | - | - | 2019-12-16 | 39 A | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | Tin (Sn) | - | - | - | - | HIGH RELIABILITY | - | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | - | - | - | NOT SPECIFIED | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | TO-247 | 0.064 Ω | - | - | 100 A | 650 V | 171 mJ | METAL-OXIDE SEMICONDUCTOR | - | 125 W | - | - | - | - | 13 pF | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| IMW65R048M1H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IMW120R060M1HTwicea Part #376-375-IMW120R060M1H | Infineon Technologies AG |
Description: Power Field-Effect Transistor,
Datasheet
Compare
| 1280
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | - | - | - | NO | 64 | - | - | - | 3 | SILICON CARBIDE | 1 | - | - | - | - | - | - | socket | 2x32 | 2.54mm | - | 36 A | THT | - | 2.24 g | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | 175 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | Yes | 2.54mm | - | straight | - | - | - | - | pin strips | -40...163°C | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | 260 | compliant | 1.5A | - | - | 10 | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | TO-247 | 0.106 Ω | - | - | 76 A | 1200 V | - | METAL-OXIDE SEMICONDUCTOR | - | 150 W | - | - | - | 60V | 6.5 pF | beryllium copper | - | - | - | - | - | - | - | 0.254µm | - | - | - | UL94V-0 | - | |
| IMW120R060M1H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPW65R041CFD7Twicea Part #376-375-IPW65R041CFD7 | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
Compare
| 8000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | - | - | - | NO | 43 | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | socket | 1x43 | 2.54mm | 2020-06-23 | 50 A | THT | - | 2.06 g | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | straight | - | - | - | - | pin strips | -40...163°C | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | TO-247 | 0.041 Ω | - | - | 211 A | 650 V | 248 mJ | METAL-OXIDE SEMICONDUCTOR | - | 227 W | - | - | - | 60V | - | beryllium copper | - | - | - | - | - | - | - | 0.254µm | - | - | - | UL94V-0 | - | |
| IPW65R041CFD7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BSZ0702LSTwicea Part #376-375-BSZ0702LS | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
Compare
| 255000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | - | - | - | YES | 11 | - | - | - | 8 | SILICON | 1 | - | - | - | - | - | - | socket | 1x11 | 2.54mm | - | 40 A | SMT | - | 0.66 g | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | SQUARE | SMALL OUTLINE | Obsolete | Yes | - | - | straight | - | - | - | - | pin strips | -40...163°C | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | DUAL | NO LEAD | - | unknown | 1.5A | - | - | - | - | IEC-61249-2-21; IEC-68-1 | S-PDSO-N8 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | - | 0.004 Ω | - | - | 160 A | 60 V | 117 mJ | METAL-OXIDE SEMICONDUCTOR | - | 69 W | - | - | - | 60V | 44 pF | beryllium copper | - | 1 | - | - | - | - | - | 0.254µm | - | - | - | UL94V-0 | - | |
| BSZ0702LS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IAUC24N10S5L300Twicea Part #376-375-IAUC24N10S5L300 | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
Compare
| 757
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | - | - | - | - | 62 | - | - | - | - | - | - | - | - | - | - | - | - | socket | 2x31 | 2.54mm | - | - | THT | - | 5.12 g | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | - | - | - | , | - | - | Active | Yes | 2.54mm | - | straight | - | - | - | - | pin strips | -40...163°C | - | - | - | e3 | - | - | - | - | EAR99 | - | - | Tin (Sn) | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | compliant | 1.5A | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | beryllium copper | - | 1 | - | - | - | - | - | 0.75µm | - | - | - | UL94V-0 | - | |
| IAUC24N10S5L300 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPW65R029CFD7Twicea Part #376-375-IPW65R029CFD7 | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
Compare
| 576
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | - | - | - | NO | 30 | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | socket | 2x15 | 2.54mm | 2020-06-19 | 69 A | SMT | - | 0.48 g | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | 2.54mm | - | straight | - | - | - | - | pin strips | -40...163°C | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | - | - | R-PSFM-T3 | - | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | TO-247 | 0.029 Ω | - | - | 304 A | 650 V | 358 mJ | METAL-OXIDE SEMICONDUCTOR | - | 305 W | - | - | - | 60V | - | beryllium copper | - | - | - | - | - | - | - | 0.254µm | - | - | - | UL94V-0 | - | |
| IPW65R029CFD7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPD80R450P7Twicea Part #376-375-IPD80R450P7 | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
Compare
| 10000
In Stock
| Min.:1 Mult.:1 | - | gold-plated | - | - | - | - | - | 23 | - | - | - | - | - | - | - | - | - | - | - | - | socket | 1x23 | 2.54mm | - | - | THT | - | 1.15 g | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | - | - | - | , | - | - | Active | Yes | - | - | straight | - | - | - | - | pin strips | -40...163°C | - | - | - | e3 | - | - | - | - | EAR99 | - | - | Tin (Sn) | - | - | - | - | - | - | - | - | - | - | - | NOT SPECIFIED | compliant | 3A | - | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150V | - | beryllium copper | - | 1 | - | - | - | - | - | 0.75µm | - | - | - | UL94V-0 | - | |
| IPD80R450P7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IMBG120R140M1HTwicea Part #376-375-IMBG120R140M1H | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
Compare
| Min.:1 Mult.:1 | - | gold-plated | - | - | - | - | - | 60 | - | - | - | - | - | - | - | - | - | - | - | - | socket | 2x30 | 2.54mm | 2020-09-17 | - | THT | - | 5.74 g | - | - | INFINEON TECHNOLOGIES AG | - | female | - | - | - | - | - | - | - | - | - | - | - | Active | Yes | 2.54mm | - | straight | - | - | - | - | pin strips | -40...163°C | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | - | - | - | unknown | 1.5A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | beryllium copper | - | 1 | - | - | - | - | - | 0.75µm | - | - | - | UL94V-0 | - | ||
| IMBG120R140M1H | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFR24N15DTwicea Part #376-375-IRFR24N15D | Infineon Technologies AG |
Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Datasheet
Compare
| 8574
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | YES | - | - | connector housing - PVC-45P | - | 2 | SILICON | 1 | 3 x 0.75 (42 strands x 0.15 mm) mm2 | - | - | - | - | - | - | - | - | - | 24 A | - | - | 330.00 | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | 250 V | - | - | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | No | - | - | - | - | 48*28*38/100 | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | IEC C14 (Male) - IEC C13 (Female) | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | SINGLE | GULL WING | 240 | not_compliant | - | - | - | 30 | - | - | R-PSSO-G2 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | TO-252AA | 0.095 Ω | - | - | 96 A | 150 V | 170 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | 1 | - | sheath - 6.5 ... 6.8 mm | - | 5000 mm | - | - | - | - | - | - | - | |
| IRFR24N15D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BC856WTwicea Part #376-375-BC856W | Infineon Technologies AG |
Transistor,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | YES | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 150 °C | - | - | - | - | - | Obsolete | - | - | - | - | 100 MHz | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | compliant | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | 0.2 W | - | 0.1 A | 125 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BC856W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF7105TRTwicea Part #376-375-IRF7105TR | Infineon Technologies AG |
Description: Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Datasheet
Compare
| 8000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | YES | - | - | - | - | 8 | SILICON | 2 | - | - | - | - | - | - | - | - | - | - | 3.5 A | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 150 °C | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Active | No | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | MATTE TIN | - | - | - | - | LOGIC LEVEL COMPATIBLE | - | - | - | - | DUAL | GULL WING | - | unknown | - | - | - | - | - | - | R-PDSO-G8 | Not Qualified | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL AND P-CHANNEL | - | - | - | MS-012AA | 0.1 Ω | - | - | 14 A | 25 V | - | METAL-OXIDE SEMICONDUCTOR | - | 2 W | - | - | - | - | - | - | - | 2 | - | - | - | - | - | - | - | - | - | - | - | |
| IRF7105TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BC160Twicea Part #376-375-BC160 | Infineon Technologies AG |
Description: Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | NO | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 175 °C | - | - | - | - | - | Obsolete | No | - | - | - | 50 MHz | - | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | SINGLE | - | - | - | - | - | - | PNP | - | - | - | - | - | - | - | - | - | - | - | - | 3.7 W | - | 1 A | 40 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| BC160 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF7301TRTwicea Part #376-375-IRF7301TR | Infineon Technologies AG |
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
Datasheet
Compare
| 600
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | YES | - | - | - | 0.2 kg | 8 | SILICON | 2 | - | - | - | - | - | - | - | - | - | - | 4.3 A | - | POS40 | - | 215.00 | - | INFINEON TECHNOLOGIES AG | - | - | 183...240 °C | - | - | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Obsolete | No | - | 285...330 °C | - | - | - | 29*25*35/50 | - | - | - | coil | - | - | e3 | - | - | - | - | EAR99 | - | Soft Tin-Lead Solder Sn/Pb | MATTE TIN | - | - | tin - 40%; lead - 60% | - | LOGIC LEVEL COMPATIBLE | - | - | - | - | DUAL | GULL WING | - | unknown | - | - | - | - | - | - | R-PDSO-G8 | Not Qualified | - | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | MS-012AA | 0.05 Ω | - | wire | - | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | 2 | - | 2 mm | - | - | - | - | - | - | - | - | - | |
| IRF7301TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IAUC120N06S5N017Twicea Part #376-375-IAUC120N06S5N017 | Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
Compare
| 25000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2020-05-04 | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | - | - | - | , | - | - | Active | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | 8541.29.00.95 | - | - | - | - | - | 260 | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | |
| IAUC120N06S5N017 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPT60R055CFD7Twicea Part #376-375-IPT60R055CFD7 | Infineon Technologies AG |
Description: Power Field-Effect Transistor,
Datasheet
Compare
| 14681
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2020-06-23 | - | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | - | - | - | , | - | - | Active | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | TIN | - | - | - | - | - | - | - | - | - | - | - | 260 | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | - | - | - | - | - | - | - | - | - | |
| IPT60R055CFD7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFZ24NSTwicea Part #376-375-IRFZ24NS | Infineon Technologies AG |
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Datasheet
Compare
| 5000
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | YES | - | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | - | 17 A | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | - | - | - | - | 175 °C | - | PLASTIC/EPOXY | PLASTIC, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Obsolete | No | - | - | - | - | - | - | - | - | - | - | - | - | e0 | - | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.95 | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | not_compliant | - | - | - | NOT SPECIFIED | - | - | R-PSSO-G2 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | N-CHANNEL | - | - | - | TO-263AB | 0.07 Ω | - | - | 68 A | 55 V | 71 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | 45 W | 1 | - | - | - | - | - | - | - | - | - | - | - | |
| IRFZ24NS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF7455TRTwicea Part #376-375-IRF7455TR | Infineon Technologies AG |
Description: Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | YES | - | - | - | - | 8 | SILICON | - | - | - | - | - | - | - | - | - | - | - | 15 A | - | - | - | - | - | INFINEON TECHNOLOGIES AG | - | - | - | 2 | - | - | 1 | - | - | PLASTIC/EPOXY | SO-8 | RECTANGULAR | SMALL OUTLINE | Obsolete | Yes | - | - | - | - | - | - | - | - | - | - | - | - | e3 | - | - | - | - | EAR99 | - | - | MATTE TIN | - | - | - | - | AVALANCHE RATED | - | - | - | - | DUAL | GULL WING | - | compliant | - | - | - | - | - | - | R-PDSO-G8 | Not Qualified | - | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | - | SWITCHING | - | N-CHANNEL | - | - | - | MS-012AA | 0.0075 Ω | - | - | 120 A | 30 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF7455TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFR9120NTwicea Part #376-375-IRFR9120N | Infineon Technologies AG |
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Datasheet
Compare
| 10
In Stock
| Min.:1 Mult.:1 | - | - | - | - | - | - | YES | - | - | - | - | 2 | SILICON | 1 | - | KAM | 0805 | 2012 | - | - | - | - | - | - | 6.6 A | - | - | 0.028 g | - | - | INFINEON TECHNOLOGIES AG | MLCC | - | - | - | SMD | - | - | 150 °C | - | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Active | No | - | - | - | - | - | - | ceramic | - | -55...125°C | - | - | ±1% | e0 | - | - | - | - | EAR99 | - | - | Tin/Lead (Sn/Pb) | - | - | - | - | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | - | 1nF | - | - | SINGLE | GULL WING | 240 | compliant | - | - | - | 30 | - | - | R-PSSO-G2 | Not Qualified | C0G (NP0) | - | SINGLE WITH BUILT-IN DIODE | - | ENHANCEMENT MODE | - | DRAIN | SWITCHING | - | P-CHANNEL | - | - | - | TO-252AA | 0.48 Ω | - | - | 26 A | 100 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | - | 1 | 50V | - | - | - | - | - | - | - | - | - | - | |
| IRFR9120N |
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