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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Surface Mount | Material | Housing Material | Weight | Number of Terminals | Transistor Element Material | Exterior Housing Material | Alternating current | Ambient operating temperature | Ambient temperature during operation | Body diameter | Cable Type | Case | Contact Material | Description | Dielectric strength | Drain Current-Max (ID) | Gross weight | Ihs Manufacturer | Insulator Material | Kind of architecture | Maximum charging voltage | Memory | Mounting | Mounting hole size | Mounting Method | Noal current | Noal voltage | Number of 12bit A/D converters | Number of inputs/outputs | Number of switching cycles (electrical) | Operating Frequency Range | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Presence and type of backlight | Pushbutton shape/color | Rohs Code | Switching scheme | Transport package size/quantity | Transport packaging size/quantity | Trip temperature | Type of integrated circuit | Wire length | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Contact resistance | Configuration | Insulation resistance | Impedance | Current | Cable length | Operating Mode | Case Connection | Clock frequency | Family | Transistor Application | Fuse type | Polarity/Channel Type | Tool type | Operating temperature range | Operating Temperature Range | Rated current | Switching voltage | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Power Dissipation Ambient-Max | Saturation Current | Operating voltage | Battery type | Diameter | Height | Width |
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  | Mfr. Part #IRLML2060TRPBFTwicea Part #3717-375-IRLML2060TRPBF | International Rectifier |
Power Field-Effect Transistor, 1.2A I(D), 60V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, ROHS COMPLIANT AND HALOGEN FREE, MICRO-3
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| Min.:1 Mult.:1 | YES | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 1.2 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | ROHS COMPLIANT AND HALOGEN FREE, MICRO-3 | RECTANGULAR | SMALL OUTLINE | Transferred | SOT-23 | - | - | Yes | - | - | - | - | - | - | - | e3 | - | EAR99 | - | Matte Tin (Sn) | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | 3 | R-PDSO-G3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-236AB | 0.48 Ω | 4.8 A | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 1.25 W | - | - | 1 | - | - | - | - | - | ||
| IRLML2060TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFR18N15DTwicea Part #3717-375-IRFR18N15D | International Rectifier |
Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Datasheet
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| Min.:1 Mult.:1 | YES | stainless steel | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 18 A | 15.75 | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | No | - | - | 42*28*23.5/400 | - | - | - | - | e0 | No | EAR99 | - | TIN LEAD | - | - | SINGLE | GULL WING | 240 | 140 mm | compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | N-CHANNEL | tweezers | - | - | - | - | TO-252AA | 0.125 Ω | 72 A | 150 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 110 W | - | - | 1 | - | - | - | - | 10 mm | ||
| IRFR18N15D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRF40R207Twicea Part #3717-375-IRF40R207 | International Rectifier |
Power Field-Effect Transistor
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | 44.2mm | - | - | - | - | 1500 (50Hz, 1 min.) V | - | 32.80 | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | 24.5mm | - | 5Amin | - | - | - | ≥10000 | - | - | - | , | - | - | Transferred | - | LED 12V | round/red | Yes | NO(NC)+NC(NO) | - | 42*28*23.5/160 | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | NOT SPECIFIED | 69mm | unknown | NOT SPECIFIED | - | - | - | ≤30mOhm | - | ≥1000 (at Uins.dc=500V) MOhm | - | - | - | - | - | - | - | - | - | - | - | -25…+85 °C | - | - | 125/250 (AC) V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| IRF40R207 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFP1405Twicea Part #3717-375-IRFP1405 | International Rectifier |
Description: Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
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| Min.:1 Mult.:1 | NO | - | brass | - | 3 | SILICON | 1 | - | - | - | - | RG-58; RG-59 | - | phosphor bronze | SMA flange socket | - | 95 A | - | INTERNATIONAL RECTIFIER CORP | PTFE | - | - | - | - | - | screw-on | - | - | - | - | - | 18 GHz | 175 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247AC | - | - | No | - | - | - | - | - | - | - | e0 | - | EAR99 | - | TIN LEAD | AVALANCHE RATED, HIGH RELIABILITY | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | 50 Ohm | - | - | ENHANCEMENT MODE | ISOLATED | - | - | SWITCHING | - | N-CHANNEL | - | - | -40 …+85 °C | - | - | TO-247AC | 0.0053 Ω | 640 A | 55 V | 530 mJ | METAL-OXIDE SEMICONDUCTOR | 310 W | - | - | - | - | - | - | - | - | ||
| IRFP1405 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFH8330TRPBFTwicea Part #3717-375-IRFH8330TRPBF | International Rectifier |
Power Field-Effect Transistor, 17A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | 0.43 | 5 | SILICON | 1 | - | max - 180 (short-term exposure) °C | - | - | - | - | - | - | - | 17 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F5 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | - | Yes | - | - | 28.5*21*19/5000 | hold - 58°C | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | DUAL | FLAT | - | housing - 8 ± 0.5; with leads - 70 ± 3 mm | compliant | - | 8 | R-PDSO-F5 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | thermo fuse in DIP package | N-CHANNEL | - | - | - | 3 A | - | - | 0.0066 Ω | 210 A | 30 V | 52 mJ | METAL-OXIDE SEMICONDUCTOR | 35 W | 250 (AC) V | - | 1 | - | - | lead - 0.6 mm | 2.6 ± 0.5 mm | 6.6 ± 0.5 mm | ||
| IRFH8330TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFH8325TRPBFTwicea Part #3717-375-IRFH8325TRPBF | International Rectifier |
Power Field-Effect Transistor, 21A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | 0.47 | 5 | SILICON | 1 | - | - | maximum - 180 (during brief exposure) °C | - | - | - | - | - | - | 21 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | 250 (AC) Vmin | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-F5 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | - | Yes | - | - | 48*45*19/20000 | holding - 85 °C | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | DUAL | FLAT | - | housing - 8 ± 0.5; with leads - 70 ± 3 mm | compliant | - | 8 | R-PDSO-F5 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | thermo fuse in DIP package | N-CHANNEL | - | - | - | 3 A | - | - | 0.005 Ω | 100 A | 30 V | 94 mJ | METAL-OXIDE SEMICONDUCTOR | 54 W | - | - | 1 | - | - | lead - 0.6 mm | 2.6 ± 0.5 mm | 6.6 ± 0.5 mm | ||
| IRFH8325TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFH5210TRPBFTwicea Part #3717-375-IRFH5210TRPBF | International Rectifier |
Power Field-Effect Transistor, 10A I(D), 100V, 0.0149ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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| Min.:1 Mult.:1 | YES | - | - | - | 5 | SILICON | 1 | (max) - 250 mA | - | - | - | - | - | - | - | - | 10 A | 90.83 | INTERNATIONAL RECTIFIER CORP | - | - | 4.2 V | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-N5 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | - | Yes | - | - | 40*40*34/100 | - | - | - | - | e3 | Yes | EAR99 | 1x18650 charger | MATTE TIN | - | - | DUAL | NO LEAD | - | - | compliant | - | 8 | R-PDSO-N5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | battery charging current (max) - 1000 mA | 0.7 m | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | - | 0.0149 Ω | 220 A | 100 V | 86 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | - | - | 1 | 110-240 (AC), 50 Hz V | Li-ion 18650, 3.7v (18x65mm) | - | - | - | ||
| IRFH5210TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRLH5030TRPBFTwicea Part #3717-375-IRLH5030TRPBF | International Rectifier |
Description: Power Field-Effect Transistor, 13A I(D), 100V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, ROHS COMPLIANT AND HALOGEN FREE, PLASTIC, QFN-8
Datasheet
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| Min.:1 Mult.:1 | YES | Brush - graphite; conductor - copper; terminal - brass | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 13 A | 2.28 | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-N5 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | - | Yes | - | 41*29*36/2000 | - | - | - | (D) - mm | - | e3 | Yes | EAR99 | Graphite brush for collector motor with spring | MATTE TIN | - | - | DUAL | NO LEAD | - | (A) - 14 mm | compliant | - | 8 | R-PDSO-N5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | - | 0.0099 Ω | 400 A | 100 V | 230 mJ | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | 1 | - | - | - | (C) - 6 mm | (B) - 11 mm | ||
| IRLH5030TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFR9120NTRPBFTwicea Part #3717-375-IRFR9120NTRPBF | International Rectifier |
Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 6.6 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | LEAD FREE, PLASTIC, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 8541.29.00.95 | SINGLE | GULL WING | 260 | - | not_compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | P-CHANNEL | - | - | - | - | - | TO-252AA | 0.48 Ω | 26 A | 100 V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | 1 | - | - | - | - | - | ||
| IRFR9120NTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRLR024NTRPBFTwicea Part #3717-375-IRLR024NTRPBF | International Rectifier |
Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 17 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | LEAD FREE, DPAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) - with Nickel (Ni) barrier | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 8541.29.00.95 | SINGLE | GULL WING | 260 | - | not_compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-252AA | 0.08 Ω | 72 A | 55 V | 68 mJ | METAL-OXIDE SEMICONDUCTOR | 45 W | - | - | 1 | - | - | - | - | - | ||
| IRLR024NTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFZ24NTwicea Part #3717-375-IRFZ24N | International Rectifier |
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 17 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | TO-220AB, 3 PIN | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | No | - | - | - | - | - | - | - | e0 | No | EAR99 | - | TIN LEAD | AVALANCHE RATED | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-220AB | 0.07 Ω | 68 A | 55 V | 71 mJ | METAL-OXIDE SEMICONDUCTOR | 45 W | - | 45 W | - | - | - | - | - | - | ||
| IRFZ24N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFR4105ZTwicea Part #3717-375-IRFR4105Z | International Rectifier |
Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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| Min.:1 Mult.:1 | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 30 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | No | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | - | SINGLE | GULL WING | 240 | - | compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-252AA | 0.0245 Ω | 120 A | 55 V | 29 mJ | METAL-OXIDE SEMICONDUCTOR | 48 W | - | - | 1 | - | - | - | - | - | ||
| IRFR4105Z | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFR3708Twicea Part #3717-375-IRFR3708 | International Rectifier |
Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 30 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | TO-252AA | - | - | No | - | - | - | - | - | - | - | e0 | - | EAR99 | - | Tin/Lead (Sn/Pb) | - | - | SINGLE | GULL WING | 240 | - | compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-252AA | 0.0125 Ω | 244 A | 30 V | 213 mJ | METAL-OXIDE SEMICONDUCTOR | 61 W | - | - | 1 | - | - | - | - | - | ||
| IRFR3708 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MMBTH10Twicea Part #3717-375-MMBTH10 | WEITRON INTERNATIONAL CO., LTD. |
Description: Transistor
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | WEITRON TECHNOLOGY CO LTD | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SOT-23, 3 PIN | - | - | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MMBTH10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF8736TRPBFTwicea Part #3717-375-IRF8736TRPBF | International Rectifier |
Description: Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | - | 8 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 18 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | LEAD FREE, SOP-8 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | - | - | DUAL | GULL WING | 260 | - | compliant | 30 | - | R-PDSO-G8 | - | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | MS-012AA | 0.0048 Ω | 144 A | 30 V | 126 mJ | METAL-OXIDE SEMICONDUCTOR | 2.5 W | - | - | 1 | - | - | - | - | - | ||
| IRF8736TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFP260MPBFTwicea Part #3717-375-IRFP260MPBF | International Rectifier |
Description: Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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| 10000
In Stock
| Min.:1 Mult.:1 | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 50 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | LEAD FREE, PLASTIC PACKAGE-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-247AC | - | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | - | compliant | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-247AC | 0.04 Ω | 200 A | 200 V | 560 mJ | METAL-OXIDE SEMICONDUCTOR | 300 W | - | - | - | - | - | - | - | - | |
| IRFP260MPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #IRFI530NPBFTwicea Part #3717-375-IRFI530NPBF | International Rectifier |
Power Field-Effect Transistor, 12A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | - | - | 3 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 12 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | LEAD FREE, PLASTIC, TO-220, FULL PACK-3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN OVER NICKEL | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | - | - | compliant | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | ISOLATED | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | TO-220AB | 0.11 Ω | 60 A | 100 V | 150 mJ | METAL-OXIDE SEMICONDUCTOR | 33 W | - | - | - | - | - | - | - | - | ||
| IRFI530NPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRFH5250TRPBFTwicea Part #3717-375-IRFH5250TRPBF | International Rectifier |
Description: Power Field-Effect Transistor, 45A I(D), 25V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | - | - | 5 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 45 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 150 °C | PLASTIC/EPOXY | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | RECTANGULAR | SMALL OUTLINE | Transferred | QFN | - | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | MATTE TIN | HIGH RELIABILITY | - | DUAL | NO LEAD | 260 | - | compliant | 30 | 8 | R-PDSO-N5 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | - | 0.00175 Ω | 400 A | 25 V | 468 mJ | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | 1 | - | - | - | - | - | ||
| IRFH5250TRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRLR3715ZCTRPBFTwicea Part #3717-375-IRLR3715ZCTRPBF | International Rectifier |
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | - | - | - | - | 1 | - | - | - | - | - | UFBGA169 | - | - | - | 49 A | 0.5 g | INTERNATIONAL RECTIFIER CORP | - | Cortex M7 | - | 64kB FLASH | SMD | - | - | - | - | 16 | 116 | - | - | 175 °C | - | , | - | - | Obsolete | - | - | - | Yes | - | - | - | - | STM32 ARM microcontroller | - | -40...85°C | - | - | EAR99 | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | - | ENHANCEMENT MODE | - | 600MHz | STM32H7 | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 40 W | - | - | - | - | - | - | - | - | ||
| IRLR3715ZCTRPBF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IRF530NSTRLPBFTwicea Part #3717-375-IRF530NSTRLPBF | International Rectifier |
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | - | - | 2 | SILICON | 1 | - | - | - | - | - | - | - | - | - | 17 A | - | INTERNATIONAL RECTIFIER CORP | - | - | - | - | - | - | - | - | - | - | - | - | - | 175 °C | PLASTIC/EPOXY | LEAD FREE, PLASTIC, D2PAK-3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | Yes | - | - | - | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) - with Nickel (Ni) barrier | AVALANCHE RATED, HIGH RELIABILITY | - | SINGLE | GULL WING | 260 | - | not_compliant | 30 | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | - | ENHANCEMENT MODE | DRAIN | - | - | SWITCHING | - | N-CHANNEL | - | - | - | - | - | - | 0.09 Ω | 60 A | 100 V | 93 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | 1 | - | - | - | - | - | ||
| IRF530NSTRLPBF |
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