Transistors - Special Purpose Products For Sale - PDF - Discrete Semiconductor Products

Discrete Semiconductor Products
Transistors - Special Purpose

						Contact plating	Mounting Type	Package / Case	Surface Mount	Number of pins	Supplier Device Package	Number of Terminals	Transistor Element Material	1st Connector Mounting Type	Cable Material	2nd Connector Mounting Type	Exterior Housing Material	Connector	Connector pinout layout	Contacts pitch	Design Level	Drain Current-Max (ID)	Electrical mounting	Gross weight	Ihs Manufacturer	Kind of connector	Manufacturer Package Code	Mfr	Number of Elements	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Piece Count	Rohs Code	Spatial orientation	Transport packaging size/quantity	Type of connector	Operating temperature	Packaging	Series	Size / Dimension	Pbfree Code	Part Status	ECCN Code	Color	Additional Feature	HTS Code	Terminal Position	Terminal Form	Shielding	Peak Reflow Temperature (Cel)	Ingress Protection	Reach Compliance Code	Current rating	Time@Peak Reflow Temperature-Max (s)	Pin Count	JESD-30 Code	Qualification Status	Wire Gauge	Configuration	Operating Mode	Voltage - Forward (Vf) (Typ)	Viewing Angle	Case Connection	Current - Test	Usage	Lens Style	Transistor Application	Polarity/Channel Type	Millicandela Rating	Lens Transparency	Wavelength - Peak	1st Connector Gender	1st Connector Number of Positions Loaded	1st Connector Type	1st Connector Number of Positions	Assembly Configuration	2nd Connector Type	Lens Color	1st Connector Orientation	1st Connector Shell Size - Insert	DS Breakdown Voltage-Min	FET Technology	2nd Connector Gender	Switching	Rated voltage	2nd Connector Number of Positions	2nd Connector Number of Positions Loaded	2nd Connector Orientation	Highest Frequency Band	2nd Connector Shell Size - Insert	Profile	Power Gain-Min (Gp)	Length	Plating thickness	Height (Max)	Flammability rating
	Mfr. SGN21C105MK Twicea 16007-375-SGN21C105MK	SUMITOMO ELECTRIC Industries Ltd	RF Power Field-Effect Transistor,		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	-	-	-	-	,	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SGN21C105MK 16007-375-SGN21C105MK SUMITOMO ELECTRIC Industries Ltd : : - : - 1 : -
	Mfr. FLM1213-4F Twicea 16007-375-FLM1213-4F	SUMITOMO ELECTRIC Device Innovations Inc	Description: RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN		Min.:1 Mult.:1	-	-	-	YES	-	-	2	GALLIUM ARSENIDE	Free Hanging (In-Line)	Polyvinyl Chloride (PVC)	Free Hanging (In-Line)	1	-	-	-	-	1.3 A	-	-	EUDYNA DEVICES INC	-	CASE IA	-	-	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Transferred	-	-	Yes	-	-	-	-	Box	BC	-	Yes	Active	EAR99	Black	HIGH RELIABILITY	-	DUAL	FLAT	Unshielded	NOT SPECIFIED	IP67 - Dust Tight, Waterproof	unknown	-	NOT SPECIFIED	2	R-CDFM-F2	Not Qualified	Round	SINGLE	DEPLETION MODE	-	-	SOURCE	-	Industrial Environments	-	AMPLIFIER	N-CHANNEL	-	-	-	Male Pins	All	Receptacle	3	Standard	Plug	-	A	M8	15 V	JUNCTION	Female Sockets	-	-	3	All	A	KU BAND	M8	-	-	3.28' (1.00m)	-	-	-
FLM1213-4F 16007-375-FLM1213-4F SUMITOMO ELECTRIC Device Innovations Inc : : - : - 1 : -
	Mfr. EGNC105MK Twicea 16007-375-EGNC105MK	SUMITOMO ELECTRIC Device Innovations Inc	Description: Transistor		Min.:1 Mult.:1	-	Surface Mount	0603 (1608 Metric)	-	-	0603	-	-	-	-	-	-	-	-	-	-	-	-	1.37	SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC	-	-	Kingbright	-	-	,	-	-	Contact Manufacturer	-	-	-	-	4831.527/5000	-	-	Cut Tape (CT);Tape & Box (TB)	-	1.60mm L x 0.80mm W	-	Active	EAR99	Blue	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	Independent	-	2.8V	120°	-	2mA	-	Oval with Flat Top	-	-	35mcd	Clear	463nm	-	-	-	-	-	-	Colorless	-	-	-	-	-	468nm	-	-	-	-	-	-	-	-	-	-	0.70mm	-
EGNC105MK 16007-375-EGNC105MK SUMITOMO ELECTRIC Device Innovations Inc : : - : - 1 : -
	Mfr. FSX017LG Twicea 16007-375-FSX017LG	SUMITOMO ELECTRIC Device Innovations Inc	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN	8338	Min.:1 Mult.:1	-	-	-	YES	-	-	4	GALLIUM ARSENIDE	-	-	-	1	-	-	-	-	-	-	-	EUDYNA DEVICES INC	-	CASE LG	-	-	CERAMIC, METAL-SEALED COFIRED	DISK BUTTON, O-CRDB-F4	ROUND	DISK BUTTON	Transferred	-	-	Yes	-	-	-	-	-	-	-	Yes	-	EAR99	-	HIGH RELIABILITY	-	RADIAL	FLAT	-	NOT SPECIFIED	-	unknown	-	NOT SPECIFIED	4	O-CRDB-F4	Not Qualified	-	SINGLE	DEPLETION MODE	-	-	SOURCE	-	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	8 V	JUNCTION	-	-	-	-	-	-	X BAND	-	-	-	-	-	-	-
FSX017LG 16007-375-FSX017LG SUMITOMO ELECTRIC Device Innovations Inc : : - : 8338 1 : -
	Mfr. FLL177ME Twicea 16007-375-FLL177ME	SUMITOMO ELECTRIC Device Innovations Inc	RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN	74	Min.:1 Mult.:1	-	-	-	YES	-	-	2	GALLIUM ARSENIDE	-	-	-	1	-	-	-	-	-	-	-	EUDYNA DEVICES INC	-	CASE ME	-	-	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Transferred	-	-	Yes	-	-	-	-	-	-	-	Yes	-	EAR99	-	HIGH RELIABILITY	-	DUAL	FLAT	-	NOT SPECIFIED	-	unknown	-	NOT SPECIFIED	2	R-CDFM-F2	Not Qualified	-	SINGLE	DEPLETION MODE	-	-	SOURCE	-	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	15 V	JUNCTION	-	-	-	-	-	-	L BAND	-	-	-	-	-	-	-
FLL177ME 16007-375-FLL177ME SUMITOMO ELECTRIC Device Innovations Inc : : - : 74 1 : -
	Mfr. EGN29B100IV-R Twicea 16007-375-EGN29B100IV-R	SUMITOMO ELECTRIC Device Innovations Inc	Description: Transistor		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC	-	-	-	-	-	,	-	-	Contact Manufacturer	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EGN29B100IV-R 16007-375-EGN29B100IV-R SUMITOMO ELECTRIC Device Innovations Inc : : - : - 1 : -
	Mfr. SGN19C210I2D Twicea 16007-375-SGN19C210I2D	SUMITOMO ELECTRIC Industries Ltd	Description: RF Power Field-Effect Transistor,		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	-	-	-	-	,	-	-	Active	-	-	Yes	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	NOT SPECIFIED	-	unknown	-	NOT SPECIFIED	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SGN19C210I2D 16007-375-SGN19C210I2D SUMITOMO ELECTRIC Industries Ltd : : - : - 1 : -
	Mfr. SGK5867-60A Twicea 16007-375-SGK5867-60A	SUMITOMO ELECTRIC Industries Ltd	Description: RF Power Field-Effect Transistor,		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	-	-	-	-	,	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SGK5867-60A 16007-375-SGK5867-60A SUMITOMO ELECTRIC Industries Ltd : : - : - 1 : -
	Mfr. ELM5964-4PST Twicea 16007-375-ELM5964-4PST	SUMITOMO ELECTRIC Industries Ltd	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN		Min.:1 Mult.:1	-	-	-	YES	-	-	6	GALLIUM ARSENIDE	-	-	-	-	-	-	-	-	1.3 A	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	CASE I2C	-	1	PLASTIC/EPOXY	SMALL OUTLINE, R-PDSO-G6	RECTANGULAR	SMALL OUTLINE	Active	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	DUAL	GULL WING	-	-	-	unknown	-	-	7	R-PDSO-G6	Not Qualified	-	SINGLE	DEPLETION MODE	-	-	SOURCE	-	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	15 V	JUNCTION	-	-	-	-	-	-	C BAND	-	-	-	-	-	-	-
ELM5964-4PST 16007-375-ELM5964-4PST SUMITOMO ELECTRIC Industries Ltd : : - : - 1 : -
	Mfr. FHX45X Twicea 16007-375-FHX45X	SUMITOMO ELECTRIC Device Innovations Inc	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE	51	Min.:1 Mult.:1	-	-	-	YES	-	-	4	GALLIUM ARSENIDE	-	-	-	1	-	-	-	-	-	-	-	EUDYNA DEVICES INC	-	-	-	-	UNSPECIFIED	UNCASED CHIP, R-XUUC-N	RECTANGULAR	UNCASED CHIP	Transferred	DIE	-	Yes	-	-	-	-	-	-	-	Yes	-	EAR99	-	LOW NOISE, HIGH RELIABILITY	-	UPPER	NO LEAD	-	NOT SPECIFIED	-	unknown	-	NOT SPECIFIED	-	R-XUUC-N	Not Qualified	-	SINGLE	DEPLETION MODE	-	-	-	-	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	3.5 V	HIGH ELECTRON MOBILITY	-	-	-	-	-	-	KU BAND	-	-	10 dB	-	-	-	-
FHX45X 16007-375-FHX45X SUMITOMO ELECTRIC Device Innovations Inc : : - : 51 1 : -
	Mfr. SGK7785-30A Twicea 16007-375-SGK7785-30A	SUMITOMO ELECTRIC Industries Ltd	RF Power Field-Effect Transistor,	34	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	-	-	-	-	,	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SGK7785-30A 16007-375-SGK7785-30A SUMITOMO ELECTRIC Industries Ltd : : - : 34 1 : -
	Mfr. FLK027XV Twicea 16007-375-FLK027XV	SUMITOMO ELECTRIC Industries Ltd	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4		Min.:1 Mult.:1	-	-	-	YES	-	-	4	GALLIUM ARSENIDE	-	-	-	1	-	-	-	Beginner Kit	-	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	-	-	-	UNSPECIFIED	UNCASED CHIP, R-XUUC-N4	RECTANGULAR	UNCASED CHIP	Obsolete	DIE	60	Yes	-	-	-	-	-	-	-	Yes	-	EAR99	-	HIGH RELIABILITY	-	UPPER	NO LEAD	-	NOT SPECIFIED	-	unknown	-	NOT SPECIFIED	4	R-XUUC-N4	Not Qualified	-	SINGLE	DEPLETION MODE	-	-	-	-	-	-	-	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	15 V	HIGH ELECTRON MOBILITY	-	-	-	-	-	-	KU BAND	-	-	-	-	-	-	-
FLK027XV 16007-375-FLK027XV SUMITOMO ELECTRIC Industries Ltd : : - : - 1 : -
	Mfr. FHX35LG Twicea 16007-375-FHX35LG	SUMITOMO ELECTRIC Industries Ltd	RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, SMT, 4 PIN		Min.:1 Mult.:1	-	-	-	YES	-	-	4	GALLIUM ARSENIDE	-	-	-	1	-	-	-	-	-	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	CASE LG	-	-	CERAMIC, METAL-SEALED COFIRED	DISK BUTTON, O-CRDB-F4	ROUND	DISK BUTTON	Obsolete	-	-	Yes	-	-	-	-	-	-	-	Yes	-	EAR99	-	HIGH RELIABILITY	-	RADIAL	FLAT	-	NOT SPECIFIED	-	unknown	-	NOT SPECIFIED	4	O-CRDB-F4	Not Qualified	-	SINGLE	DEPLETION MODE	-	-	SOURCE	-	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	4 V	HIGH ELECTRON MOBILITY	-	-	-	-	-	-	KU BAND	-	-	8.5 dB	-	-	-	-
FHX35LG 16007-375-FHX35LG SUMITOMO ELECTRIC Industries Ltd : : - : - 1 : -
	Mfr. SGFCF10S-DT1 Twicea 16007-375-SGFCF10S-DT1	SUMITOMO ELECTRIC Industries Ltd	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, PLASTIC, Z2D, 6 PIN		Min.:1 Mult.:1	-	-	-	YES	-	-	6	GALLIUM NITRIDE	-	-	-	1	-	-	-	-	-	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	-	-	-	PLASTIC/EPOXY	SMALL OUTLINE, R-PDSO-N6	RECTANGULAR	SMALL OUTLINE	Active	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	DUAL	NO LEAD	-	-	-	unknown	-	-	-	R-PDSO-N6	-	-	SINGLE	DEPLETION MODE	-	-	SOURCE	-	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	160 V	HIGH ELECTRON MOBILITY	-	-	-	-	-	-	S BAND	-	-	-	-	-	-	-
SGFCF10S-DT1 16007-375-SGFCF10S-DT1 SUMITOMO ELECTRIC Industries Ltd : : - : - 1 : -
	Mfr. FLM4450-18F Twicea 16007-375-FLM4450-18F	SUMITOMO ELECTRIC Device Innovations Inc	Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN		Min.:1 Mult.:1	gold-plated	-	-	YES	2	-	2	GALLIUM ARSENIDE	-	-	-	1	socket	1x2	2.54mm	-	6 A	THT	0.1 g	EUDYNA DEVICES INC	female	CASE IK	-	-	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Transferred	-	-	Yes	straight	-	pin strips	-40...163°C	-	-	-	Yes	-	EAR99	-	HIGH RELIABILITY	-	DUAL	FLAT	-	NOT SPECIFIED	-	unknown	1.5A	NOT SPECIFIED	2	R-CDFM-F2	Not Qualified	-	SINGLE	DEPLETION MODE	-	-	SOURCE	-	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	15 V	JUNCTION	-	-	60V	-	-	-	C BAND	-	beryllium copper	-	-	0.254µm	-	UL94V-0
FLM4450-18F 16007-375-FLM4450-18F SUMITOMO ELECTRIC Device Innovations Inc : : - : - 1 : -
	Mfr. EGN28B200IV-R Twicea 16007-375-EGN28B200IV-R	SUMITOMO ELECTRIC Device Innovations Inc	Transistor		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC	-	-	-	-	-	,	-	-	Contact Manufacturer	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EGN28B200IV-R 16007-375-EGN28B200IV-R SUMITOMO ELECTRIC Device Innovations Inc : : - : - 1 : -
	Mfr. EGNB090MK Twicea 16007-375-EGNB090MK	SUMITOMO ELECTRIC Industries Ltd	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, MK, 2 PIN		Min.:1 Mult.:1	-	-	-	YES	-	-	2	GALLIUM NITRIDE	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	-	-	1	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	DUAL	FLAT	-	-	-	unknown	-	-	2	R-CDFM-F2	Not Qualified	-	SINGLE	DEPLETION MODE	-	-	SOURCE	-	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	120 V	HIGH ELECTRON MOBILITY	-	-	-	-	-	-	L BAND	-	-	-	-	-	-	-
EGNB090MK 16007-375-EGNB090MK SUMITOMO ELECTRIC Industries Ltd : : - : - 1 : -
	Mfr. EGNB090M1A Twicea 16007-375-EGNB090M1A	SUMITOMO ELECTRIC Device Innovations Inc	Description: Transistor		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC	-	-	-	-	-	,	-	-	Contact Manufacturer	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EGNB090M1A 16007-375-EGNB090M1A SUMITOMO ELECTRIC Device Innovations Inc : : - : - 1 : -
	Mfr. FHC40LGT Twicea 16007-375-FHC40LGT	SUMITOMO ELECTRIC Device Innovations Inc	Transistor		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC DEVICE INNOVATIONS USA INC	-	-	-	-	-	,	-	-	Contact Manufacturer	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	8541.21.00.75	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FHC40LGT 16007-375-FHC40LGT SUMITOMO ELECTRIC Device Innovations Inc : : - : - 1 : -
	Mfr. EGNB010MK Twicea 16007-375-EGNB010MK	SUMITOMO ELECTRIC Industries Ltd	Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2		Min.:1 Mult.:1	-	-	-	YES	-	-	2	GALLIUM NITRIDE	-	-	-	-	-	-	-	-	-	-	-	SUMITOMO ELECTRIC INDUSTRIES LTD	-	-	-	1	CERAMIC, METAL-SEALED COFIRED	FLANGE MOUNT, R-CDFM-F2	RECTANGULAR	FLANGE MOUNT	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	EAR99	-	-	-	DUAL	FLAT	-	-	-	unknown	-	-	2	R-CDFM-F2	Not Qualified	-	SINGLE	DEPLETION MODE	-	-	SOURCE	-	-	-	AMPLIFIER	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	-	-	120 V	HIGH ELECTRON MOBILITY	-	-	-	-	-	-	S BAND	-	-	-	-	-	-	-
EGNB010MK 16007-375-EGNB010MK SUMITOMO ELECTRIC Industries Ltd : : - : - 1 : -

Discrete Semiconductor Products

Transistors - Special Purpose definition: Transistors - Special Purpose Product Listing: SGN21C105MK,FLM1213-4F,EGNC105MK,FSX017LG,FLL177ME.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - Special Purpose has 43 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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