Transistors - FETs, MOSFETs - RF Products For Sale - PDF - Discrete Semiconductor Products -Page13

Discrete Semiconductor Products
Transistors - FETs, MOSFETs - RF

							Factory Lead Time	Lifecycle Status	Contact Plating	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Number of Terminals	Transistor Element Material	Base Product Number	Channel Mode	Continuous Drain Current Id	Factory Pack QuantityFactory Pack Quantity	Fall Time	Forward Transconductance - Min	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer	Manufacturer Package Code	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Moisture Sensitivity Levels	Mounting Styles	Number of Elements	Operating Temperature (Max.)	Package	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Pd - Power Dissipation	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Transistor Polarity	Unit Weight	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Voltage Rated	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Voltage - Rated DC	Current Rating (Amps)	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Frequency	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Operating Frequency	Configuration	Element Configuration	Operating Mode	Power Dissipation	Case Connection	Output Power	Current - Test	Transistor Application	Rise Time	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Transistor Type	Operating Temperature Range	Continuous Drain Current (ID)	JEDEC-95 Code	Gate to Source Voltage (Vgs)	Gain	Max Output Power	Drain Current-Max (Abs) (ID)	Drain-source On Resistance-Max	Drain to Source Breakdown Voltage	Input Capacitance	DS Breakdown Voltage-Min	Channel Type	Power - Output	FET Technology	Power Dissipation-Max (Abs)	Noise Figure	Voltage - Test	Feedback Cap-Max (Crss)	Min Breakdown Voltage	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free

						Factory Lead Time	Lifecycle Status	Contact Plating	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Number of Terminals	Transistor Element Material	Base Product Number	Channel Mode	Continuous Drain Current Id	Factory Pack QuantityFactory Pack Quantity	Fall Time	Forward Transconductance - Min	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer	Manufacturer Package Code	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Moisture Sensitivity Levels	Mounting Styles	Number of Elements	Operating Temperature (Max.)	Package	Package Body Material	Package Description	Package Shape	Package Style	Part Life Cycle Code	Part Package Code	Pd - Power Dissipation	Product Status	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	Transistor Polarity	Unit Weight	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Voltage Rated	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Voltage - Rated DC	Current Rating (Amps)	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Frequency	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Operating Frequency	Configuration	Element Configuration	Operating Mode	Power Dissipation	Case Connection	Output Power	Current - Test	Transistor Application	Rise Time	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Transistor Type	Operating Temperature Range	Continuous Drain Current (ID)	JEDEC-95 Code	Gate to Source Voltage (Vgs)	Gain	Max Output Power	Drain Current-Max (Abs) (ID)	Drain-source On Resistance-Max	Drain to Source Breakdown Voltage	Input Capacitance	DS Breakdown Voltage-Min	Channel Type	Power - Output	FET Technology	Power Dissipation-Max (Abs)	Noise Figure	Voltage - Test	Feedback Cap-Max (Crss)	Min Breakdown Voltage	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free
	Mfr. J113RL1 Twicea 598-368-J113RL1	onsemi	SMALL SIGNAL N-CHANNEL J-FET	6000	Min.:1 Mult.:1	-	-	-	-	-	-	NO	-	-	3	SILICON	-	-	-	-	-	-	-	ROCHESTER ELECTRONICS LLC	Rochester Electronics LLC	CASE 29-11	J113RL1	-	onsemi	-	NOT SPECIFIED	-	1	-	Bulk	PLASTIC/EPOXY	CASE 29-11, TO-226AA, 3 PIN	ROUND	CYLINDRICAL	Active	TO-92	-	Active	NOT SPECIFIED	5.24	-	No	-	-	-	-	-	-	-	-	*	e0	No	-	-	-	-	-	TIN LEAD	-	-	EUROPEAN PART NUMBER	-	-	-	-	BOTTOM	THROUGH-HOLE	NOT SPECIFIED	unknown	-	-	-	-	3	O-PBCY-T3	COMMERCIAL	-	SINGLE	-	DEPLETION MODE	-	-	-	-	CHOPPER	-	-	N-CHANNEL	-	-	-	TO-92	-	-	-	-	100 Ω	-	-	-	-	-	JUNCTION	-	-	-	5 pF	-	-	-	-	-
J113RL1 598-368-J113RL1 onsemi : : - : 6000 1 : -
	Mfr. 2SJ195-TL-E Twicea 598-368-2SJ195-TL-E	onsemi	PCH 4V DRIVE SERIES	1712	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ195-TL-E 598-368-2SJ195-TL-E onsemi : : - : 1712 1 : -
	Mfr. ARF469AG Twicea 536-368-ARF469AG	Microchip Technology	RF MOSFET Transistors FG, MOSFET, 500V, TO-264, RoHSView in Development Tools Selector		Min.:1 Mult.:1	-	-	-	-	Through Hole	TO-264-3, TO-264AA	-	-	TO-264	-	-	ARF469	-	-	1	-	-	-	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Tube	-	-	-	-	-	-	-	Active	-	-	Details	-	-	0.674332 oz	-	-	-	500 V	Tube	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30A	-	-	-	-	-	-	45MHz	-	-	-	-	-	-	N-Channel	-	-	-	-	-	250 µA	-	-	-	-	-	-	-	-	-	16dB	-	-	-	-	-	-	-	350W	-	-	-	150 V	-	-	-	-	-	-
ARF469AG 536-368-ARF469AG Microchip Technology : : - : - 1 : -
	Mfr. SD2931-10 Twicea 761-368-SD2931-10	STMicroelectronics	TRANS RF N-CH HF/VHF/UHF M174	188	Min.:1 Mult.:1	-	ACTIVE (Last Updated: 8 months ago)	-	Screw	-	M174	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	e4	-	Obsolete	1 (Unlimited)	4	EAR99	-	Nickel/Palladium/Gold (Ni/Pd/Au)	200°C	-65°C	-	-	125V	-	389W	RADIAL	FLAT	NOT SPECIFIED	-	20A	175MHz	NOT SPECIFIED	SD2931	4	-	Not Qualified	-	-	Single	ENHANCEMENT MODE	389W	SOURCE	-	250mA	-	-	125V	-	N-Channel	-	20A	-	20V	15dB	150W	-	-	125V	480pF	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	125V	-	-	ROHS3 Compliant	Lead Free
SD2931-10 761-368-SD2931-10 STMicroelectronics : : - : 188 1 : -
	Mfr. STMFS4855NST1G Twicea 598-368-STMFS4855NST1G	onsemi	NFET SO8FL 25V SPCL TR	43219	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STMFS4855NST1G 598-368-STMFS4855NST1G onsemi : : - : 43219 1 : -
	Mfr. ATF-54143-TR1G Twicea 107-368-ATF-54143-TR1G	Broadcom Limited	BROADCOM LIMITED ATF-54143-TR1G RF FET Transistor, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343	71	Min.:1 Mult.:1	6 Weeks	-	Tin	Surface Mount	-	SC-82A, SOT-343	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	2001	-	e3	-	Obsolete	1 (Unlimited)	4	EAR99	-	-	150°C	-65°C	-	-	5V	-	725mW	DUAL	GULL WING	260	-	120mA	2GHz	-	ATF-54143	-	-	-	-	SINGLE	-	ENHANCEMENT MODE	725mW	SOURCE	-	60mA	AMPLIFIER	-	3V	N-CHANNEL	pHEMT FET	-	120mA	-	1V	16.6dB	-	0.12A	-	-	-	5V	-	20.4dBm	HIGH ELECTRON MOBILITY	-	0.5dB	-	-	-	No	No SVHC	RoHS Compliant	Lead Free
ATF-54143-TR1G 107-368-ATF-54143-TR1G Broadcom Limited : : - : 71 1 : -
	Mfr. NTD15N06AVT4 Twicea 598-368-NTD15N06AVT4	onsemi	NFET DPAK 60V 0.120R TR		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTD15N06AVT4 598-368-NTD15N06AVT4 onsemi : : - : - 1 : -
	Mfr. PD55015TR-E Twicea 761-368-PD55015TR-E	STMicroelectronics	TRANS RF N-CH FET POWERSO-10RF	300	Min.:1 Mult.:1	25 Weeks	-	-	Surface Mount	-	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	-	-	e3	-	Active	3 (168 Hours)	2	EAR99	-	MATTE TIN	165°C	-65°C	HIGH RELIABILITY	-	-	-	73W	DUAL	GULL WING	250	not_compliant	5A	500MHz	30	PD55015	10	R-PDSO-G2	Not Qualified	-	-	Single	ENHANCEMENT MODE	73W	SOURCE	-	150mA	AMPLIFIER	-	40V	N-CHANNEL	LDMOS	-	5A	-	20V	14dB	15W	7A	-	40V	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	12.5V	-	40V	-	-	ROHS3 Compliant	Lead Free
PD55015TR-E 761-368-PD55015TR-E STMicroelectronics : : - : 300 1 : -
	Mfr. PD57006TR-E Twicea 761-368-PD57006TR-E	STMicroelectronics	TRANSISTOR RF POWERSO-10	2	Min.:1 Mult.:1	-	-	-	Surface Mount	-	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	-	-	e3	-	Obsolete	3 (168 Hours)	2	EAR99	-	Matte Tin (Sn) - annealed	165°C	-65°C	-	-	-	-	20W	DUAL	GULL WING	250	not_compliant	1A	945MHz	30	PD57006	10	R-PDSO-G2	Not Qualified	-	-	Single	ENHANCEMENT MODE	20W	SOURCE	-	70mA	AMPLIFIER	-	65V	N-CHANNEL	LDMOS	-	1A	-	20V	15dB	6W	1A	-	65V	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	28V	-	-	-	-	ROHS3 Compliant	-
PD57006TR-E 761-368-PD57006TR-E STMicroelectronics : : - : 2 1 : -
	Mfr. MRF1570FNT1 Twicea 17568-368-MRF1570FNT1	NXP USA Inc.	Trans RF MOSFET N-CH 40V 9-Pin TO-272 T/R	66	Min.:1 Mult.:1	-	-	-	-	-	TO-272-8	YES	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	200°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	40V	Tape & Reel (TR)	2003	-	e3	-	Obsolete	3 (168 Hours)	8	EAR99	-	Matte Tin (Sn)	-	-	-	8541.21.00.75	-	-	-	DUAL	FLAT	260	-	-	470MHz	40	MRF1570	-	R-PDFM-F8	Not Qualified	-	COMMON SOURCE, 2 ELEMENTS	-	ENHANCEMENT MODE	-	SOURCE	-	800mA	AMPLIFIER	-	-	N-CHANNEL	LDMOS	-	-	-	-	11.5dB	-	-	-	-	-	40V	-	70W	METAL-OXIDE SEMICONDUCTOR	165W	-	12.5V	-	-	-	-	ROHS3 Compliant	-
MRF1570FNT1 17568-368-MRF1570FNT1 NXP USA Inc. : : - : 66 1 : -
	Mfr. 2SK3291-TD-E Twicea 598-368-2SK3291-TD-E	onsemi	NCH 4V DRIVE SERIES	28701	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3291-TD-E 598-368-2SK3291-TD-E onsemi : : - : 28701 1 : -
	Mfr. SCH2819-TL-H Twicea 598-368-SCH2819-TL-H	onsemi	NCH SBD 2.5V DRIVE SERIES	426019	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCH2819-TL-H 598-368-SCH2819-TL-H onsemi : : - : 426019 1 : -
	Mfr. 3HP04CH-TL-E Twicea 598-368-3HP04CH-TL-E	onsemi	PCH 4V DRIVE SERIES		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3HP04CH-TL-E 598-368-3HP04CH-TL-E onsemi : : - : - 1 : -
	Mfr. SD57060-10 Twicea 761-368-SD57060-10	STMicroelectronics	FET RF 65V 945MHZ M243		Min.:1 Mult.:1	32 Weeks	-	-	-	-	M243	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	65V	Bulk	-	-	-	-	Active	1 (Unlimited)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	7A	945MHz	-	SD57060	-	-	-	-	-	-	-	-	-	-	100mA	-	-	-	-	LDMOS	-	-	-	-	15dB	-	-	-	-	-	-	-	60W	-	-	-	28V	-	-	-	-	ROHS3 Compliant	-
SD57060-10 761-368-SD57060-10 STMicroelectronics : : - : - 1 : -
	Mfr. MRF6S23100HSR3 Twicea 17568-368-MRF6S23100HSR3	NXP USA Inc.	Trans RF MOSFET N-CH 68V 3-Pin NI-780S T/R		Min.:1 Mult.:1	-	-	-	-	-	NI-780S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	68V	Tape & Reel (TR)	2006	-	-	-	Obsolete	3 (168 Hours)	-	-	-	-	-	-	-	-	-	-	-	-	-	NOT SPECIFIED	-	-	2.4GHz	NOT SPECIFIED	MRF6S23100	-	-	-	-	-	-	-	-	-	-	1A	-	-	-	-	LDMOS	-	-	-	-	15.4dB	-	-	-	-	-	-	-	20W	-	-	-	28V	-	-	-	-	ROHS3 Compliant	-
MRF6S23100HSR3 17568-368-MRF6S23100HSR3 NXP USA Inc. : : - : - 1 : -
	Mfr. ARF449AG Twicea 536-368-ARF449AG	Microchip Technology	RF MOSFET Transistors FG, MOSFET, 500V, TO-247, RoHSView in Development Tools Selector		Min.:1 Mult.:1	-	-	-	-	-	TO-247-3	-	-	TO-247	-	-	ARF449	Enhancement	9	1	3 ns	3 mS	9 A	-	-	-	-	+ 150 C	Microchip Technology	- 55 C	-	Through Hole	-	-	Bulk	-	-	-	-	-	-	165 W	Obsolete	-	-	Details	-	N-Channel	1.340411 oz	450 V	30 V	5 V	450 V	Tube	-	-	-	-	-	-	-	-	RF Power MOSFET	-	-	-	-	-	-	9A	-	-	-	-	-	-	81.36MHz	-	-	-	-	-	120 MHz	N-Channel	-	-	165	-	90 W	-	-	3.1 ns	-	-	-	- 55 C to + 150 C	-	-	-	13 dB	-	-	-	-	-	-	N	90W	-	-	-	150 V	-	-	-	-	-	-
ARF449AG 536-368-ARF449AG Microchip Technology : : - : - 1 : -
	Mfr. 2SK4101FS-V-H Twicea 598-368-2SK4101FS-V-H	onsemi	NCH 10V DRIVE SERIES	1023	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK4101FS-V-H 598-368-2SK4101FS-V-H onsemi : : - : 1023 1 : -
	Mfr. 3SK263-5-TG-E Twicea 598-368-3SK263-5-TG-E	ON Semiconductor	MOSFET N-CH 15V 30MA CP4	12000	Min.:1 Mult.:1	4 Weeks	LAST SHIPMENTS (Last Updated: 1 week ago)	Tin	-	-	TO-253-4, TO-253AA	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	2012	-	-	yes	Obsolete	1 (Unlimited)	-	EAR99	-	-	150°C	-55°C	-	-	-	-	200mW	-	-	-	-	30mA	200MHz	-	-	4	-	-	-	-	Dual	-	200mW	-	-	10mA	-	-	15V	-	N-Channel Dual Gate	-	30mA	-	8V	21dB	-	-	-	-	-	-	-	-	-	-	2.2dB	6V	-	-	-	-	RoHS Compliant	Lead Free
3SK263-5-TG-E 598-368-3SK263-5-TG-E ON Semiconductor : : - : 12000 1 : -
	Mfr. PD20015-E Twicea 761-368-PD20015-E	STMicroelectronics	TRANS RF PWR N-CH POWERSO-10RF	3	Min.:1 Mult.:1	25 Weeks	ACTIVE (Last Updated: 8 months ago)	-	Surface Mount	-	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tube	-	-	-	-	Active	3 (168 Hours)	2	EAR99	-	-	165°C	-65°C	HIGH RELIABILITY	-	-	-	79W	DUAL	GULL WING	-	-	7A	2GHz	-	PD20015	10	R-PDFM-G2	-	-	-	Single	ENHANCEMENT MODE	79W	SOURCE	-	350mA	AMPLIFIER	-	40V	N-CHANNEL	LDMOS	-	7A	-	15V	11dB	23W	7A	-	40V	-	-	-	15W	METAL-OXIDE SEMICONDUCTOR	-	-	13.6V	-	-	No	-	ROHS3 Compliant	-
PD20015-E 761-368-PD20015-E STMicroelectronics : : - : 3 1 : -
	Mfr. A2T27S020GNR1 Twicea 17568-368-A2T27S020GNR1	NXP USA Inc.	AIRFAST RF POWER LDMOS TRANSISTO	160	Min.:1 Mult.:1	10 Weeks	-	-	-	-	TO-270BA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	65V	Tape & Reel (TR)	2006	-	-	-	Active	3 (168 Hours)	-	EAR99	-	-	-	-	-	-	-	10μA	-	-	-	NOT SPECIFIED	-	-	400MHz~2.7GHz	NOT SPECIFIED	-	-	-	-	-	-	-	-	-	-	-	185mA	-	-	-	-	LDMOS	-	-	-	-	21dB	-	-	-	-	-	-	-	20W	-	-	-	28V	-	-	-	-	ROHS3 Compliant	-
A2T27S020GNR1 17568-368-A2T27S020GNR1 NXP USA Inc. : : - : 160 1 : -

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - RF definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - RF Product Listing: J113RL1,2SJ195-TL-E,ARF469AG,SD2931-10,STMFS4855NST1G.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - FETs, MOSFETs - RF has 5357 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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Discrete Semiconductor Products