Transistors - FETs, MOSFETs - RF Products For Sale - PDF - Discrete Semiconductor Products -Page10

Discrete Semiconductor Products
Transistors - FETs, MOSFETs - RF

							Factory Lead Time	Lifecycle Status	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Base Product Number	Breakdown Voltage / V	Channel Mode	Continuous Drain Current Id	Drain Current-Max (ID)	Factory Pack QuantityFactory Pack Quantity	Fall Time	Forward Transconductance - Min	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting Styles	Number of Elements	Operating Temperature (Max.)	Operating Temperature-Max	Package	Package Body Material	Package Shape	Package Style	Part Life Cycle Code	Pd - Power Dissipation	Product Status	Risk Rank	RoHS	Rohs Code	Transistor Polarity	Unit Weight	Usage Level	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Voltage Rated	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Voltage - Rated DC	Current Rating (Amps)	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Frequency	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Operating Frequency	Configuration	Element Configuration	Operating Mode	Power Dissipation	Case Connection	Output Power	Current - Test	Transistor Application	Rise Time	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Transistor Type	Operating Temperature Range	Continuous Drain Current (ID)	Gate to Source Voltage (Vgs)	Gain	Max Output Power	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Input Capacitance	DS Breakdown Voltage-Min	Channel Type	Power - Output	FET Technology	Power Dissipation-Max (Abs)	Noise Figure	Voltage - Test	Feedback Cap-Max (Crss)	Highest Frequency Band	Power Gain-Min (Gp)	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free

						Factory Lead Time	Lifecycle Status	Mount	Mounting Type	Package / Case	Surface Mount	Number of Pins	Supplier Device Package	Weight	Number of Terminals	Transistor Element Material	Base Product Number	Breakdown Voltage / V	Channel Mode	Continuous Drain Current Id	Drain Current-Max (ID)	Factory Pack QuantityFactory Pack Quantity	Fall Time	Forward Transconductance - Min	Id - Continuous Drain Current	Ihs Manufacturer	Manufacturer Part Number	Maximum Operating Temperature	Mfr	Minimum Operating Temperature	Mounting Styles	Number of Elements	Operating Temperature (Max.)	Operating Temperature-Max	Package	Package Body Material	Package Shape	Package Style	Part Life Cycle Code	Pd - Power Dissipation	Product Status	Risk Rank	RoHS	Rohs Code	Transistor Polarity	Unit Weight	Usage Level	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Voltage Rated	Packaging	Published	Series	JESD-609 Code	Pbfree Code	Part Status	Moisture Sensitivity Level (MSL)	Number of Terminations	Termination	ECCN Code	Type	Terminal Finish	Max Operating Temperature	Min Operating Temperature	Additional Feature	HTS Code	Voltage - Rated DC	Current Rating (Amps)	Max Power Dissipation	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Reach Compliance Code	Current Rating	Frequency	Time@Peak Reflow Temperature-Max (s)	Base Part Number	Pin Count	JESD-30 Code	Qualification Status	Operating Frequency	Configuration	Element Configuration	Operating Mode	Power Dissipation	Case Connection	Output Power	Current - Test	Transistor Application	Rise Time	Drain to Source Voltage (Vdss)	Polarity/Channel Type	Transistor Type	Operating Temperature Range	Continuous Drain Current (ID)	Gate to Source Voltage (Vgs)	Gain	Max Output Power	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Input Capacitance	DS Breakdown Voltage-Min	Channel Type	Power - Output	FET Technology	Power Dissipation-Max (Abs)	Noise Figure	Voltage - Test	Feedback Cap-Max (Crss)	Highest Frequency Band	Power Gain-Min (Gp)	Height	Length	Width	Radiation Hardening	REACH SVHC	RoHS Status	Lead Free
	Mfr. PD55008S-E Twicea 761-368-PD55008S-E	STMicroelectronics	FET RF 40V 500MHZ PWRSO10	3	Min.:1 Mult.:1	25 Weeks	-	Surface Mount	-	PowerSO-10 Exposed Bottom Pad	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tube	-	-	e3	-	Active	3 (168 Hours)	2	-	EAR99	-	Matte Tin (Sn) - annealed	165°C	-65°C	HIGH RELIABILITY	-	40V	-	52.8W	DUAL	FLAT	250	-	4A	500MHz	30	PD55008	10	R-PDSO-F2	-	-	-	Single	ENHANCEMENT MODE	52.8W	SOURCE	-	150mA	AMPLIFIER	-	40V	N-CHANNEL	LDMOS	-	4A	20V	17dB	8W	4A	40V	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	12.5V	-	-	-	-	-	-	No	-	ROHS3 Compliant	Lead Free
PD55008S-E 761-368-PD55008S-E STMicroelectronics : : - : 3 1 : -
	Mfr. A2I25D025NR1 Twicea 17568-368-A2I25D025NR1	NXP USA Inc.	Trans MOSFET 18-Pin TO-270 T/R	16	Min.:1 Mult.:1	10 Weeks	-	-	-	TO-270-17 Variant, Flat Leads	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	65V	Tape & Reel (TR)	2009	-	e3	-	Active	3 (168 Hours)	-	-	EAR99	-	Tin (Sn)	-	-	-	8542.33.00.01	-	-	-	-	-	260	-	-	2.69GHz	40	-	-	-	-	-	-	-	-	-	-	-	59mA	-	-	-	-	LDMOS (Dual)	-	-	-	31.9dB	-	-	-	-	-	-	3.2W	-	-	-	28V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
A2I25D025NR1 17568-368-A2I25D025NR1 NXP USA Inc. : : - : 16 1 : -
	Mfr. 0912GN-15E Twicea 536-368-0912GN-15E	Microchip Technology	RF MOSFET Transistors TRAN, GaN, 960-1215 MHz, 15W, 50V		Min.:1 Mult.:1	-	-	-	Surface Mount	55-QQ	-	-	55-QQ	-	-	-	-	-	-	-	-	1	-	-	1 mA	-	-	-	Microchip Technology	-	Screw Mounts	-	-	-	Bulk	-	-	-	-	-	Active	-	Details	-	-	-	-	150 V	- 8 V to 0 V	-	150 V	-	-	E	-	-	-	-	-	-	-	RF Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	960MHz ~ 1.215GHz	-	-	-	-	-	960 MHz to 1.215 GHz	-	-	-	-	-	19 W	10 mA	-	-	-	-	-	-	-	-	18.1 dB	-	-	-	-	-	-	19W	-	-	-	50 V	-	-	-	-	-	-	-	-	-	-
0912GN-15E 536-368-0912GN-15E Microchip Technology : : - : - 1 : -
	Mfr. VRF154FL Twicea 536-368-VRF154FL	Microchip Technology	RF MOSFET Transistors FG, MOSFET, ARF, T2GView in Development Tools Selector	2735	Min.:1 Mult.:1	-	-	-	-	T2	-	-	T2	-	-	-	VRF154	-	-	-	-	1	-	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Tube	-	-	-	-	-	Active	-	Details	-	-	2.840048 oz	-	-	-	-	170 V	-	-	VRF154FL	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4mA	-	-	-	-	-	-	80MHz	-	-	-	-	-	-	N-Channel	-	-	-	-	-	800 mA	-	-	-	-	-	-	-	-	17dB	-	-	-	-	-	-	600W	-	-	-	50 V	-	-	-	-	-	-	-	-	-	-
VRF154FL 536-368-VRF154FL Microchip Technology : : - : 2735 1 : -
	Mfr. 2N3819 Twicea 598-368-2N3819	ON Semiconductor	TRANSISTOR RF NCH 25V TO-92	10000	Min.:1 Mult.:1	-	LAST SHIPMENTS (Last Updated: 1 week ago)	Through Hole	-	TO-226-3, TO-92-3 (TO-226AA)	-	3	TO-92-3	201mg	-	-	-	25V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	25V	Bulk	2002	-	-	-	Obsolete	1 (Unlimited)	-	Through Hole	-	-	-	150°C	-65°C	-	-	25V	100mA	350mW	-	-	-	-	50mA	-	-	2N3819	-	-	-	-	-	Single	-	350mW	-	-	-	-	-	15V	-	N-Channel JFET	-	20mA	25V	-	-	-	25V	8pF	-	-	-	-	-	-	-	-	-	-	5.33mm	5.2mm	4.19mm	-	No SVHC	Non-RoHS Compliant	Lead Free
2N3819 598-368-2N3819 ON Semiconductor : : - : 10000 1 : -
	Mfr. ARF1505 Twicea 536-368-ARF1505	Microchip Technology	RF MOSFET Transistors FG, MOSFET, 1200V, ARF, T1View in Development Tools Selector		Min.:1 Mult.:1	-	-	-	-	Die	-	-	Die	-	-	-	ARF1505	-	Enhancement	25	-	1	13 ns	5.5 mS	25 A	-	-	+ 175 C	Microchip Technology	- 55 C	-	-	-	-	Bulk	-	-	-	-	750 W	Active	-	Details	-	N-Channel	-	-	1.2 kV	30 V	5 V	1200 V	-	-	-	-	-	-	-	-	-	-	RF Power MOSFET	-	-	-	-	-	-	25A	-	-	-	-	-	-	27.12MHz	-	-	-	-	-	40 MHz	N-Channel	-	-	1.5	-	750 W	-	-	5 ns	-	-	-	- 55 C to + 175 C	-	-	17 dB	-	-	-	-	-	N Channel	750W	-	-	-	300 V	-	-	-	-	-	-	-	-	-	-
ARF1505 536-368-ARF1505 Microchip Technology : : - : - 1 : -
	Mfr. MMBFJ310LT1 Twicea 598-368-MMBFJ310LT1	ON Semiconductor	Trans JFET N-CH 25V 3-Pin SOT-23 T/R		Min.:1 Mult.:1	-	LAST SHIPMENTS (Last Updated: 1 week ago)	-	-	SOT-23-3	YES	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	25V	Cut Tape (CT)	2006	-	e0	no	Obsolete	1 (Unlimited)	3	-	EAR99	-	Tin/Lead (Sn/Pb)	150°C	-55°C	-	-	25V	-	-	DUAL	GULL WING	240	not_compliant	10mA	-	30	-	3	-	Not Qualified	-	-	Single	DEPLETION MODE	-	-	-	-	AMPLIFIER	-	25V	N-CHANNEL	-	-	-	25V	-	-	-	25V	-	-	-	-	JUNCTION	0.225W	-	-	2.5 pF	ULTRA HIGH FREQUENCY B	-	-	-	-	-	-	Non-RoHS Compliant	Contains Lead
MMBFJ310LT1 598-368-MMBFJ310LT1 ON Semiconductor : : - : - 1 : -
	Mfr. STAC4932B Twicea 761-368-STAC4932B	STMicroelectronics	TRANSISTOR RF MOSF N-CH STAC244B	58	Min.:1 Mult.:1	32 Weeks	-	Screw	-	STAC244B	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tray	-	-	-	-	Active	1 (Unlimited)	4	-	EAR99	-	-	200°C	-65°C	-	-	-	-	1.2kW	DUAL	FLAT	-	-	-	123MHz	-	STAC493	4	-	-	-	SINGLE	-	ENHANCEMENT MODE	-	SOURCE	-	500mA	AMPLIFIER	-	200V	-	N-Channel	-	1mA	20V	26dB	-	-	-	-	-	-	1000W	METAL-OXIDE SEMICONDUCTOR	-	-	100V	-	-	-	-	-	-	No	No SVHC	ROHS3 Compliant	-
STAC4932B 761-368-STAC4932B STMicroelectronics : : - : 58 1 : -
	Mfr. CPH3338-T-TL-H Twicea 598-368-CPH3338-T-TL-H	onsemi	PCH 4V DRIVE SERIES	6000	Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	Bulk	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CPH3338-T-TL-H 598-368-CPH3338-T-TL-H onsemi : : - : 6000 1 : -
	Mfr. SD2941-10W Twicea 761-368-SD2941-10W	STMicroelectronics	Trans RF MOSFET N-CH 130V 20A 4-Pin Case M-174 Tray	50000	Min.:1 Mult.:1	32 Weeks	-	Screw	-	M174	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	130V	Tray	-	-	-	-	Active	1 (Unlimited)	-	-	EAR99	-	-	200°C	-65°C	-	-	-	-	389W	-	-	-	-	20A	175MHz	-	SD2941	-	-	-	-	Single	-	-	-	-	-	250mA	-	-	-	-	N-Channel	-	20A	20V	15.8dB	-	-	-	-	-	-	175W	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	-	-	-	-	-	No	-	ROHS3 Compliant	Lead Free
SD2941-10W 761-368-SD2941-10W STMicroelectronics : : - : 50000 1 : -
	Mfr. MRF7S21170HSR3 Twicea 17568-368-MRF7S21170HSR3	NXP USA Inc.	Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R		Min.:1 Mult.:1	-	-	-	-	NI-880S	YES	-	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	225°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	65V	Tape & Reel (TR)	2007	-	-	-	Obsolete	1 (Unlimited)	2	-	EAR99	-	-	-	-	-	8541.29.00.75	-	-	-	DUAL	FLAT	260	-	-	2.17GHz	40	MRF7S21170	-	R-CDFP-F2	Not Qualified	-	SINGLE	-	ENHANCEMENT MODE	-	SOURCE	-	1.4A	AMPLIFIER	-	-	N-CHANNEL	LDMOS	-	-	-	16dB	-	-	-	-	65V	-	50W	METAL-OXIDE SEMICONDUCTOR	-	-	28V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRF7S21170HSR3 17568-368-MRF7S21170HSR3 NXP USA Inc. : : - : - 1 : -
	Mfr. CGH40025F Twicea 163-368-CGH40025F	Cree/Wolfspeed	RF MOSFET HEMT 28V 440166	203	Min.:1 Mult.:1	12 Weeks	-	-	-	440166	-	-	440166	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	84V	Tray	2015	GaN	-	-	Not For New Designs	1 (Unlimited)	-	-	-	-	-	-	-	-	-	-	7A	-	-	-	-	-	7A	0Hz~6GHz	-	CGH40*	-	-	-	-	-	-	-	-	-	-	250mA	-	-	-	-	HEMT	-	-	-	13dB	-	-	-	-	-	-	30W	-	-	-	28V	-	-	-	-	-	-	-	-	RoHS Compliant	-
CGH40025F 163-368-CGH40025F Cree/Wolfspeed : : - : 203 1 : -
	Mfr. MRF6V3090NBR5 Twicea 17568-368-MRF6V3090NBR5	NXP USA Inc.	RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4	2539	Min.:1 Mult.:1	-	-	-	-	TO-272BB	YES	-	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	225°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	110V	Tape & Reel (TR)	2006	-	e3	-	Obsolete	3 (168 Hours)	4	-	EAR99	-	Matte Tin (Sn)	-	-	ESD PROTECTION	8541.29.00.75	-	-	-	DUAL	FLAT	260	-	-	860MHz	40	MRF6V3090	-	R-PDFM-F4	Not Qualified	-	SINGLE	-	ENHANCEMENT MODE	-	SOURCE	-	350mA	AMPLIFIER	-	-	N-CHANNEL	LDMOS	-	-	-	22dB	-	-	-	-	115V	-	18W	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRF6V3090NBR5 17568-368-MRF6V3090NBR5 NXP USA Inc. : : - : 2539 1 : -
	Mfr. PD85035STR-E Twicea 761-368-PD85035STR-E	STMicroelectronics	Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Straight lead) T/R	1000	Min.:1 Mult.:1	25 Weeks	-	Surface Mount	-	PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)	-	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tape & Reel (TR)	-	-	-	yes	Active	3 (168 Hours)	2	-	EAR99	-	-	165°C	-65°C	-	-	-	-	95W	DUAL	FLAT	NOT SPECIFIED	-	8A	870MHz	NOT SPECIFIED	PD85035	10	R-PDSO-F2	Not Qualified	-	-	Single	ENHANCEMENT MODE	95W	SOURCE	-	350mA	AMPLIFIER	-	40V	N-CHANNEL	LDMOS	-	8A	15V	17dB	40W	8A	40V	-	-	-	15W	METAL-OXIDE SEMICONDUCTOR	-	-	13.6V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
PD85035STR-E 761-368-PD85035STR-E STMicroelectronics : : - : 1000 1 : -
	Mfr. MRF6VP3450HR5 Twicea 17568-368-MRF6VP3450HR5	NXP USA Inc.	FREESCALE SEMICONDUCTOR MRF6VP3450HR5 RF MOSFET, N CHANNEL, 110V, 375D-05	165	Min.:1 Mult.:1	10 Weeks	-	-	-	NI-1230	YES	-	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	225°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	110V	Tape & Reel (TR)	2010	-	-	-	Active	Not Applicable	4	-	EAR99	-	-	-	-	-	8541.29.00.75	-	-	-	-	FLAT	260	-	-	860MHz	40	MRF6VP3450	-	R-CDFM-F4	Not Qualified	-	SINGLE	-	ENHANCEMENT MODE	-	SOURCE	-	1.4A	AMPLIFIER	-	-	N-CHANNEL	LDMOS (Dual)	-	-	-	22.5dB	-	-	-	-	110V	-	90W	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRF6VP3450HR5 17568-368-MRF6VP3450HR5 NXP USA Inc. : : - : 165 1 : -
	Mfr. PD84006L-E Twicea 761-368-PD84006L-E	STMicroelectronics	FET RF 25V 870MHZ	15000	Min.:1 Mult.:1	11 Weeks	ACTIVE (Last Updated: 8 months ago)	Surface Mount	-	8-PowerVDFN	-	14	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Cut Tape (CT)	-	-	e3	-	Active	3 (168 Hours)	8	-	EAR99	-	MATTE TIN	150°C	-65°C	-	-	-	-	31W	DUAL	-	225	-	5A	870MHz	-	PD84006	8	S-PDSO-N8	-	-	-	Single	ENHANCEMENT MODE	31W	SOURCE	-	150mA	AMPLIFIER	-	25V	N-CHANNEL	LDMOS	-	5A	15V	15dB	6W	5A	25V	-	-	-	2W	METAL-OXIDE SEMICONDUCTOR	-	-	7.5V	-	-	-	-	-	-	No	-	ROHS3 Compliant	-
PD84006L-E 761-368-PD84006L-E STMicroelectronics : : - : 15000 1 : -
	Mfr. SD4931 Twicea 761-368-SD4931	STMicroelectronics	Trans RF MOSFET N-CH 200V 20A 4-Pin Case M-174 Tray	200	Min.:1 Mult.:1	32 Weeks	-	Screw	-	M174	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tray	-	-	-	-	Active	1 (Unlimited)	4	-	EAR99	-	-	200°C	-65°C	-	-	-	-	389W	RADIAL	FLAT	-	-	20A	175MHz	-	SD4931	4	-	-	-	-	Single	ENHANCEMENT MODE	-	-	-	250mA	-	-	200V	-	N-Channel	-	20A	20V	14.8dB	175W	-	-	-	-	-	150W	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	-	-	-	-	-	No	-	ROHS3 Compliant	-
SD4931 761-368-SD4931 STMicroelectronics : : - : 200 1 : -
	Mfr. VRF3933 Twicea 536-368-VRF3933	Microchip Technology	RF MOSFET Transistors FG, MOSFET, RF, RoHS, M177		Min.:1 Mult.:1	-	-	-	-	-	YES	-	-	-	4	SILICON	-	-	-	-	20 A	1	-	8 mS	20 A	MICROSEMI CORP	VRF3933	+ 150 C	-	- 65 C	-	1	-	200 °C	-	CERAMIC, METAL-SEALED COFIRED	ROUND	FLANGE MOUNT	Not Recommended	648 W	-	8.44	Details	Yes	N-Channel	1.292085 oz	-	260 V	40 V	3.6 V	-	-	-	-	-	-	-	-	-	-	-	RF Power MOSFET	-	-	-	-	-	-	-	-	RADIAL	FLAT	-	compliant	-	-	-	-	-	O-CRFM-F4	-	30 MHz	SINGLE	-	ENHANCEMENT MODE	-	SOURCE	350 W	-	AMPLIFIER	-	-	N-CHANNEL	-	- 65 C to + 150 C	-	-	28 dB	-	20 A	-	-	250 V	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	VERY HIGH FREQUENCY BAND	23 dB	-	-	-	-	-	-	-
VRF3933 536-368-VRF3933 Microchip Technology : : - : - 1 : -
	Mfr. MRF6V2150NR1 Twicea 17568-368-MRF6V2150NR1	NXP USA Inc.	Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R		Min.:1 Mult.:1	10 Weeks	-	-	-	TO-270AB	YES	-	-	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	225°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	110V	Tape & Reel (TR)	2006	-	e3	-	Not For New Designs	3 (168 Hours)	4	-	EAR99	-	Matte Tin (Sn)	-	-	-	8541.29.00.75	-	-	-	DUAL	FLAT	260	-	-	220MHz	40	MRF6V2150	-	R-PDFM-F4	Not Qualified	-	SINGLE	-	ENHANCEMENT MODE	-	SOURCE	-	450mA	AMPLIFIER	-	-	N-CHANNEL	LDMOS	-	-	-	25dB	-	-	-	-	110V	-	150W	METAL-OXIDE SEMICONDUCTOR	-	-	50V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
MRF6V2150NR1 17568-368-MRF6V2150NR1 NXP USA Inc. : : - : - 1 : -
	Mfr. AFT20S015NR1 Twicea 17568-368-AFT20S015NR1	NXP USA Inc.	FET RF 65V 2.17GHZ TO270-2	387	Min.:1 Mult.:1	10 Weeks	-	-	-	TO-270AA	YES	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	125°C	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive grade	-	-	-	65V	Tape & Reel (TR)	2006	-	e3	-	Active	3 (168 Hours)	-	-	EAR99	-	Matte Tin (Sn)	-	-	-	8541.29.00.40	-	-	-	-	-	260	-	-	2.17GHz	40	-	-	-	-	-	Single	-	-	-	-	-	132mA	-	-	-	N-CHANNEL	LDMOS	-	-	-	17.6dB	-	-	-	-	-	-	1.5W	METAL-OXIDE SEMICONDUCTOR	-	-	28V	-	-	-	-	-	-	-	-	ROHS3 Compliant	-
AFT20S015NR1 17568-368-AFT20S015NR1 NXP USA Inc. : : - : 387 1 : -

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Transistors - FETs, MOSFETs - RF definition: RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as: Stereo amplifiers. Radio transmitters. The... Transistors - FETs, MOSFETs - RF Product Listing: PD55008S-E,A2I25D025NR1,0912GN-15E,VRF154FL,2N3819.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - FETs, MOSFETs - RF has 5357 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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