- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - Arrays
| Factory Lead Time | Mount | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Transistor Element Material | Base Product Number | Current - Continuous Drain (Id) @ 25℃ | Mfr | Number of Elements | Package | Product Status | Operating Temperature | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | HTS Code | Max Power Dissipation | Technology | Terminal Position | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Power - Max | FET Type | Transistor Application | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Polarity/Channel Type | Continuous Drain Current (ID) | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Collector Current-Max (IC) | FET Feature | Collector-Emitter Voltage-Max | RoHS Status | Lead Free | |||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr.SLA5201Twicea681-367-SLA5201 | Sanken |
MOSFET 3N/3P-CH 600V 7A 15-SIP
| 90
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 15-SIP Exposed Tab, Formed Leads | - | - | SILICON | - | - | - | 6 | - | - | - | Tube | 2012 | - | yes | Active | 1 (Unlimited) | 15 | - | - | - | - | SINGLE | NOT SPECIFIED | - | NOT SPECIFIED | 15 | R-PSIP-T15 | Not Qualified | COMPLEX | - | - | - | 3 N and 3 P-Channel (3-Phase Bridge) | SWITCHING | - | - | - | - | 600V | NPN | 7A | - | - | - | - | - | - | 7A | Standard | 600V | RoHS Compliant | - | |
| SLA5201 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr.SMA5127Twicea681-367-SMA5127 | Sanken |
MOSFET 3N/3P-CH 60V 4A 12-SIP
| 44
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 6 | - | - | 150°C TJ | Tube | 2001 | - | yes | Active | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 4W | - | SINGLE | NOT SPECIFIED | - | NOT SPECIFIED | 12 | R-PSIP-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | - | 4W | 3 N and 3 P-Channel (3-Phase Bridge) | SWITCHING | 550 Ω @ 2A, 4V | 2V @ 250μA | 150pF @ 10V | - | 60V | N-CHANNEL AND P-CHANNEL | 4A | 4A | 0.55Ohm | 8A | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | RoHS Compliant | - | |
| SMA5127 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr.SLA5064Twicea681-367-SLA5064 | Sanken |
MOSFET 3N/3P-CH 60V 10A 12-SIP
| 2700
| Min.:1 Mult.:1 | 12 Weeks | - | Through Hole | 12-SIP | NO | - | SILICON | - | 10A | - | 6 | - | - | 150°C TJ | Bulk | 2001 | - | yes | Active | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | - | - | SINGLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 12 | R-PSFM-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | ISOLATED | 5W | 3 N and 3 P-Channel (3-Phase Bridge) | SWITCHING | 140m Ω @ 5A, 4V | - | 460pF @ 10V | - | 60V | N-CHANNEL AND P-CHANNEL | - | 10A | 0.14Ohm | 15A | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | RoHS Compliant | - | |
| SLA5064 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr.SMA5132Twicea681-367-SMA5132 | Sanken |
MOSFET 3N/3P-CH 500V 1.5A 12-SIP
| 122
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 6 | - | - | - | Tube | 2012 | - | yes | Active | 1 (Unlimited) | 12 | - | - | - | - | SINGLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 12 | R-PSIP-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | - | - | 3 N and 3 P-Channel (3-Phase Bridge) | - | - | - | - | - | 500V | N-CHANNEL | 1.5A | - | 4Ohm | - | 500V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | RoHS Compliant | Lead Free | |
| SMA5132 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SMA5118Twicea681-367-SMA5118 | Sanken |
MOSFET 6N-CH 500V 5A 12-SIP
| 100
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 6 | - | - | 150°C TJ | Tube | 2001 | - | yes | Active | 1 (Unlimited) | 12 | - | 8541.29.00.95 | 4W | - | SINGLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 12 | R-PSIP-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | - | 4W | 6 N-Channel (3-Phase Bridge) | SWITCHING | 1.4 Ω @ 2.5A, 10V | 4V @ 1mA | 770pF @ 10V | - | 500V | - | 5A | 5A | - | 10A | 500V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | RoHS Compliant | Lead Free | |
| SMA5118 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SMA5117Twicea681-367-SMA5117 | Sanken |
MOSFET 6N-CH 250V 7A 12-SIP
| 30
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 6 | - | - | 150°C TJ | Tube | 2001 | - | yes | Active | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 4W | - | SINGLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 12 | R-PSIP-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | - | 4W | 6 N-Channel (3-Phase Bridge) | SWITCHING | 250m Ω @ 3.5A, 10V | 4V @ 1mA | 850pF @ 10V | - | 250V | - | 7A | 7A | 0.25Ohm | 15A | 250V | 120 mJ | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | RoHS Compliant | - | |
| SMA5117 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SLA5061Twicea681-367-SLA5061 | Sanken |
MOSFET 3N/3P-CH 60V 10A/6A 12SIP
| 27
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | 10A 6A | - | 6 | - | - | 150°C TJ | Bulk | 2001 | - | yes | Active | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 5W | - | SINGLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 12 | R-PSFM-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | ISOLATED | - | 3 N and 3 P-Channel (3-Phase Bridge) | SWITCHING | 140m Ω @ 5A, 4V | - | 460pF @ 10V | - | 60V | N-CHANNEL AND P-CHANNEL | 6A | 10A | 0.14Ohm | 15A | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | RoHS Compliant | Lead Free | |
| SLA5061 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SLA5059Twicea681-367-SLA5059 | Sanken |
MOSFET 3N/3P-CH 60V 4A 12-SIP
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 6 | - | - | 150°C TJ | Tube | 2001 | - | yes | Active | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 30W | - | SINGLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 12 | R-PSFM-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | - | 5W | 3 N and 3 P-Channel (3-Phase Bridge) | SWITCHING | 550m Ω @ 2A, 4V | 2V @ 250μA | 150pF @ 10V | - | 60V | N-CHANNEL AND P-CHANNEL | 4A | 4A | 0.55Ohm | 8A | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | RoHS Compliant | - | ||
| SLA5059 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SLA5060Twicea681-367-SLA5060 | Sanken |
MOSFET 3N/3P-CH 60V 6A 12-SIP
| 8000
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 6 | - | - | 150°C TJ | Bulk | 2001 | - | yes | Active | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 5W | - | SINGLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 12 | R-PSFM-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | ISOLATED | 5W | 3 N and 3 P-Channel (3-Phase Bridge) | SWITCHING | 220m Ω @ 3A, 4V | - | 320pF @ 10V | - | 60V | N-CHANNEL AND P-CHANNEL | 6A | 6A | 0.22Ohm | 10A | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | RoHS Compliant | - | |
| SLA5060 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SMA5131Twicea681-367-SMA5131 | Sanken |
MOSFET 3N/3P-CH 250V 2A 12-SIP
| 92
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 6 | - | - | - | Tube | 2010 | - | yes | Active | 1 (Unlimited) | 12 | EAR99 | - | - | - | SINGLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 12 | R-PSIP-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | - | - | 3 N and 3 P-Channel (3-Phase Bridge) | - | - | - | - | - | 250V | N-CHANNEL | 2A | 2A | 1.8Ohm | - | 250V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | RoHS Compliant | Lead Free | |
| SMA5131 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SLA5073Twicea681-367-SLA5073 | Sanken |
MOSFET 6N-CH 60V 5A 15-SIP
| 35000
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 15-SIP Exposed Tab, Formed Leads | - | - | SILICON | - | - | - | 6 | - | - | 150°C TJ | Tube | 2001 | - | yes | Active | 1 (Unlimited) | 15 | EAR99 | 8541.29.00.95 | 5W | - | SINGLE | NOT SPECIFIED | - | NOT SPECIFIED | 15 | R-PSFM-T15 | Not Qualified | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | 5W | 6 N-Channel (3-Phase Bridge) | SWITCHING | 300m Ω @ 3A, 4V | 2V @ 250μA | 320pF @ 10V | - | 60V | P-CHANNEL | 5A | 5A | 0.3Ohm | 8A | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | RoHS Compliant | - | |
| SLA5073 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SLA5075Twicea681-367-SLA5075 | Sanken |
MOSFET 6N-CH 500V 5A 15-SIP
| 207
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 15-SIP Exposed Tab, Formed Leads | - | - | SILICON | - | - | - | 6 | - | - | 150°C TJ | Tube | 2001 | - | yes | Active | 1 (Unlimited) | 15 | - | 8541.29.00.95 | 5W | - | SINGLE | NOT SPECIFIED | - | NOT SPECIFIED | 15 | R-PSFM-T15 | Not Qualified | COMPLEX | ENHANCEMENT MODE | - | 5W | 6 N-Channel (3-Phase Bridge) | SWITCHING | 1.4 Ω @ 2.5A, 10V | 4V @ 1mA | 770pF @ 10V | - | 500V | - | 5A | 5A | - | 10A | 500V | 45 mJ | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | RoHS Compliant | - | |
| SLA5075 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SLA5212Twicea681-367-SLA5212 | Sanken |
MOSFET 3N/3P-CH 35V 8A 15-SIP
| 522
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 15-SIP Exposed Tab, Formed Leads | - | - | - | - | - | - | - | - | - | - | Tube | 2012 | - | yes | Active | 1 (Unlimited) | - | - | - | - | - | - | NOT SPECIFIED | unknown | NOT SPECIFIED | - | - | - | - | - | - | - | 3 N and 3 P-Channel (3-Phase Bridge) | - | - | - | - | - | 35V | - | 8A | - | - | - | - | - | - | - | Standard | - | RoHS Compliant | Lead Free | |
| SLA5212 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SMA5133Twicea681-367-SMA5133 | Sanken |
MOSFET 3N/3P-CH 500V 2.5A 12-SIP
| 95
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 6 | - | - | - | Tube | 2012 | - | yes | Active | 1 (Unlimited) | 12 | - | - | - | - | SINGLE | NOT SPECIFIED | - | NOT SPECIFIED | 12 | R-PSIP-T12 | Not Qualified | COMPLEX | ENHANCEMENT MODE | - | - | 3 N and 3 P-Channel (3-Phase Bridge) | - | - | - | - | - | 500V | N-CHANNEL | 2.5A | - | 2Ohm | - | 500V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | RoHS Compliant | Lead Free | |
| SMA5133 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SLA5074Twicea681-367-SLA5074 | Sanken |
MOSFET 4N-CH 60V 5A 15-SIP
| 35000
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 15-SIP Exposed Tab, Formed Leads | - | - | SILICON | - | - | - | 4 | - | - | 150°C TJ | Tube | 2001 | - | yes | Active | 1 (Unlimited) | 15 | EAR99 | 8541.29.00.95 | 4.8W | - | SINGLE | NOT SPECIFIED | - | NOT SPECIFIED | 15 | R-PSFM-T15 | Not Qualified | 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | 4.8W | 4 N-Channel (Half Bridge) | SWITCHING | 300m Ω @ 3A, 4V | 2V @ 250μA | 320pF @ 10V | - | 60V | P-CHANNEL | 5A | 5A | 0.3Ohm | 8A | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | RoHS Compliant | - | |
| SLA5074 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SPF0004Twicea681-367-SPF0004 | Sanken |
Dual N-channel Power MOSFET
| 35
| Min.:1 Mult.:1 | - | - | Surface Mount | 20-PowerSOIC (0.295, 7.50mm Width) | - | 20-HSOP | - | - | 6A (Ta) | Sanken | - | - | Active | 150°C (TJ) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.5W (Tc) | 2 N-Channel (Dual) | - | 260mOhm @ 6A, 10V | 2.6V @ 1mA | 960pF @ 10V | - | 275V | - | - | - | - | - | - | - | - | - | Standard | - | - | - | |
| SPF0004 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SMA5113Twicea681-367-SMA5113 | Sanken |
ARRAY FOR INVERTER 4IN1/450V/7A/
| Min.:1 Mult.:1 | - | - | Through Hole | 12-SIP | - | 12-SIP | - | SMA51 | 7A (Ta) | Sanken | - | Tube | Active | 150°C | - | - | - | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | 4 N-Channel | - | - | 4W (Ta), 35W (Tc) | - | - | 1.1Ohm @ 3.5A, 10V | 4V @ 1mA | 720pF @ 10V | - | 450V | - | - | - | - | - | - | - | - | - | Standard | - | - | - | ||
| SMA5113 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SLA5086Twicea681-367-SLA5086 | Sanken |
MOSFET 5P-CH 60V 5A 12-SIP
| 179
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 5 | - | - | 150°C TJ | Tube | 2001 | - | yes | Not For New Designs | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 5W | - | SINGLE | NOT SPECIFIED | - | NOT SPECIFIED | 12 | R-PSFM-T12 | Not Qualified | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | 5W | 5 P-Channel, Common Source | - | 220m Ω @ 3A, 10V | 2V @ 250μA | 790pF @ 10V | - | 60V | - | 5A | 5A | 0.22Ohm | 10A | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | RoHS Compliant | - | |
| SLA5086 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SLA5037Twicea681-367-SLA5037 | Sanken |
MOSFET 4N-CH 100V 10A 12SIP
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 4 | - | - | 150°C TJ | Tube | 2001 | - | yes | Active | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 5W | - | SINGLE | NOT SPECIFIED | - | NOT SPECIFIED | 12 | R-PSFM-T12 | Not Qualified | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | 5W | 4 N-Channel | - | 80m Ω @ 5A, 10V | 2V @ 250mA | 1630pF @ 10V | - | 100V | - | 10A | - | 0.08Ohm | 40A | 100V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | - | Logic Level Gate | - | RoHS Compliant | - | ||
| SLA5037 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.SMA5125Twicea681-367-SMA5125 | Sanken |
MOSFET 3N/3P-CH 60V 10A 12-SIP
| 1
| Min.:1 Mult.:1 | 12 Weeks | Through Hole | Through Hole | 12-SIP | - | - | SILICON | - | - | - | 6 | - | - | 150°C TJ | Tube | 2003 | - | yes | Not For New Designs | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 4W | - | SINGLE | NOT SPECIFIED | unknown | NOT SPECIFIED | 12 | R-PSIP-T12 | Not Qualified | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | 4W | 3 N and 3 P-Channel (3-Phase Bridge) | SWITCHING | 140m Ω @ 5A, 4V | 2V @ 250μA | 460pF @ 10V | - | 60V | N-CHANNEL | 10A | - | 0.14Ohm | 15A | 60V | - | METAL-OXIDE SEMICONDUCTOR | - | Standard | - | RoHS Compliant | Lead Free | |
| SMA5125 |
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