- Discrete Semiconductor Products
- Transistors - FETs, MOSFETs - Arrays
| Factory Lead Time | Mount | Mounting Type | Package / Case | Supplier Device Package | Current - Continuous Drain (Id) @ 25℃ | Mfr | Product Status | Operating Temperature | Packaging | Published | Series | Part Status | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Power - Max | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Continuous Drain Current (ID) | Input Capacitance | FET Feature | Rds On Max | Capacitance - Input | RoHS Status | |||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr.EPC2221Twicea257-367-EPC2221 | EPC |
TRANS GAN DUAL 100V.11OHM 9BMPD
| 4057
| Min.:1 Mult.:1 | - | - | Surface Mount | Die | Die | 5A | EPC | Active | 150°C (TJ) | - | - | - | - | - | - | - | - | 2 N-Channel (Dual) Common Source | - | - | - | - | 100V | - | - | GaNFET (Gallium Nitride) | - | - | - | |
| EPC2221 | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2111Twicea257-367-EPC2111 | EPC |
GAN TRANS ASYMMETRICAL HALF BRID
| 21840
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | Die | Die | 16A Ta | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | - | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 230pF @ 15V 590pF @ 15V | 2.2nC @ 5V, 5.7nC @ 5V | 30V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | |
| EPC2111 | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2102Twicea257-367-EPC2102 | EPC |
TRANS GAN SYMMETRICAL HALF BRIDG
| 1701
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | Die | Die | 23A | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 830pF @ 30V | 6.8nC @ 5V | 60V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | |
| EPC2102 | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2100Twicea257-367-EPC2100 | EPC |
GAN TRANS ASYMMETRICAL HALF BRID
| 207
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | Die | Die | 10A Ta 40A Ta | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 475pF @ 15V 1960pF @ 15V | 4.9nC @ 15V, 19nC @ 15V | 30V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | |
| EPC2100 | |||||||||||||||||||||||||||||||||||
| | Mfr.EPC2100ENGRTTwicea257-367-EPC2100ENGRT | EPC |
GANFET 2 N-CH 30V 9.5A/38A DIE
| Min.:1 Mult.:1 | 16 Weeks | - | Surface Mount | Die | Die | 10A Ta 40A Ta | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 475pF @ 15V 1960pF @ 15V | 4.9nC @ 15V, 19nC @ 15V | 30V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | ||
| EPC2100ENGRT | |||||||||||||||||||||||||||||||||||
| | Mfr.EPC2102ENGRTTwicea257-367-EPC2102ENGRT | EPC |
GANFET 2 N-CHANNEL 60V 23A DIE
| Min.:1 Mult.:1 | - | - | Surface Mount | Die | Die | 23A Tj | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 830pF @ 30V | 6.8nC @ 5V | 60V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | ||
| EPC2102ENGRT | |||||||||||||||||||||||||||||||||||
| | Mfr.EPC2103Twicea257-367-EPC2103 | EPC |
TRANS GAN SYMMETRICAL HALF BRIDG
| 1840
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | Die | Die | 28A | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 760pF @ 40V | 6.5nC @ 5V | 80V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | |
| EPC2103 | |||||||||||||||||||||||||||||||||||
| | Mfr.EPC2101Twicea257-367-EPC2101 | EPC |
TRANS GAN ASYMMETRICAL HALF BRID
| 525
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | Die | Die | 9.5A 38A | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 300pF @ 30V 1200pF @ 30V | 2.7nC @ 5V, 12nC @ 5V | 60V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | |
| EPC2101 | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2106Twicea257-367-EPC2106 | EPC |
GANFET TRANS SYM 100V BUMPED DIE
| 18741
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | Die | Die | 1.7A | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 70mOhm @ 2A, 5V | 2.5V @ 600μA | 75pF @ 50V | 0.73nC @ 5V | 100V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | |
| EPC2106 | |||||||||||||||||||||||||||||||||||
| | Mfr.EPC2105Twicea257-367-EPC2105 | EPC |
GAN TRANS ASYMMETRICAL HALF BRID
| 1084
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | Die | Die | 9.5A 38A | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 300pF @ 40V 1100pF @ 40V | 2.5nC @ 5V, 10nC @ 5V | 80V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | |
| EPC2105 | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2108Twicea257-367-EPC2108 | EPC |
GANFET 3 N-CH 60V/100V 9BGA
| 540
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) | 1.7A 500mA | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V | 2.5V @ 100μA, 2.5V @ 20μA | 22pF @ 30V 7pF @ 30V | 0.22nC @ 5V, 0.044nC @ 5V | 60V 100V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | |
| EPC2108 | |||||||||||||||||||||||||||||||||||
| | Mfr.EPC2107Twicea257-367-EPC2107 | EPC |
GANFET 3 N-CH 100V 9BGA
| 4993
| Min.:1 Mult.:1 | 14 Weeks | - | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) | 1.7A 500mA | - | - | -40°C~150°C TJ | Tape & Reel (TR) | - | eGaN® | Active | 1 (Unlimited) | - | - | - | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | 2.5V @ 100μA, 2.5V @ 20μA | 16pF @ 50V 7pF @ 50V | 0.16nC @ 5V, 0.044nC @ 5V | 100V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | |
| EPC2107 | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2100ENGTwicea257-367-EPC2100ENG | EPC |
TRANS GAN 2N-CH 30V BUMPED DIE
| Min.:1 Mult.:1 | 22 Weeks | Surface Mount | - | - | - | - | - | - | - | - | 2015 | - | - | - | 150°C | -40°C | - | - | - | - | - | - | 30V | 38A | - | - | 8 mΩ | 380pF | RoHS Compliant | ||
| EPC2100ENG | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2102ENGTwicea257-367-EPC2102ENG | EPC |
TRANS GAN 2N-CH 60V BUMPED DIE
| Min.:1 Mult.:1 | 22 Weeks | Surface Mount | - | - | - | - | - | - | - | - | 2015 | - | - | - | 150°C | -40°C | - | - | - | - | - | - | 60V | 23A | - | - | 4.4 mΩ | 830pF | RoHS Compliant | ||
| EPC2102ENG | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2108ENGRTTwicea257-367-EPC2108ENGRT | EPC |
TRANS GAN 3N-CH BUMPED DIE
| Min.:1 Mult.:1 | - | Surface Mount | - | - | - | - | - | - | - | - | 2015 | - | - | - | 150°C | -40°C | - | - | - | - | - | - | 100V | 1.7A | - | - | 190 mΩ | 22pF | RoHS Compliant | ||
| EPC2108ENGRT | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2105ENGTwicea257-367-EPC2105ENG | EPC |
TRANS GAN 2N-CH 80V BUMPED DIE
| Min.:1 Mult.:1 | 22 Weeks | Surface Mount | - | - | - | - | - | - | - | - | 2015 | - | - | - | 150°C | -40°C | - | - | - | - | - | - | 80V | 38A | - | - | 14.5 mΩ | 300pF | RoHS Compliant | ||
| EPC2105ENG | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2107ENGRTTwicea257-367-EPC2107ENGRT | EPC |
TRANS GAN 3N-CH 100V BUMPED DIE
| Min.:1 Mult.:1 | - | Surface Mount | - | - | - | - | - | - | - | - | 2015 | - | - | - | 150°C | -40°C | - | - | - | - | - | - | 100V | 1.7A | - | - | 320 mΩ | 16pF | RoHS Compliant | ||
| EPC2107ENGRT | |||||||||||||||||||||||||||||||||||
 | Mfr.EPC2110ENGRTTwicea257-367-EPC2110ENGRT | EPC |
TRANS GAN 2N-CH 120V BUMPED DIE
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | Die | Die | 3.4A | - | - | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | eGaN® | Active | 1 (Unlimited) | 150°C | -40°C | - | 2 N-Channel (Dual) Common Source | 60mOhm @ 4A, 5V | 2.5V @ 700μA | 80pF @ 60V | 0.8nC @ 5V | 120V | 3.4A | 80pF | GaNFET (Gallium Nitride) | 60 mΩ | - | ROHS3 Compliant | ||
| EPC2110ENGRT | |||||||||||||||||||||||||||||||||||
| | Mfr.EPC2106ENGRTTwicea257-367-EPC2106ENGRT | EPC |
TRANS GAN 2N-CH 100V BUMPED DIE
| Min.:1 Mult.:1 | 16 Weeks | Surface Mount | Surface Mount | Die | Die | 1.7A | - | - | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | eGaN® | Active | 1 (Unlimited) | 150°C | -40°C | - | 2 N-Channel (Half Bridge) | 70mOhm @ 2A, 5V | 2.5V @ 600μA | 75pF @ 50V | 0.73nC @ 5V | 100V | 1.7A | 75pF | GaNFET (Gallium Nitride) | 70 mΩ | - | ROHS3 Compliant | ||
| EPC2106ENGRT | |||||||||||||||||||||||||||||||||||
| | Mfr.EPC2101ENGRTTwicea257-367-EPC2101ENGRT | EPC |
GAN TRANS ASYMMETRICAL HALF BRID
| Min.:1 Mult.:1 | 22 Weeks | - | Surface Mount | Die | Die | 9.5A 38A | - | - | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | eGaN® | Active | 1 (Unlimited) | - | - | - | 2 N-Channel (Half Bridge) | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 300pF @ 30V | 2.7nC @ 5V | 60V | - | - | GaNFET (Gallium Nitride) | - | - | ROHS3 Compliant | ||
| EPC2101ENGRT |
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