Diodes - Rectifiers - Single Products For Sale - PDF - Discrete Semiconductor Products

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Diodes - Rectifiers - Single

Image	Part #	Manufacturer	Description	Availability	Quantity	Mounting Type	Package / Case	Supplier Device Package	Config.	Current - Average Rectified (Io) (per Diode)	IF(A) Tc=125℃	IF(A) Tc=25℃	IF(A),Tc=125℃	IF(A),Tc=160℃	IF(A),Tc=25℃	Ifsm(A),Tc=25℃	IR（uA）Tj=175℃max	IR（uA）Tj=175℃typ	IR（uA）Tj=25℃ typ	IR（uA）Tj=25℃max	Mfr	Package	Product Status	Ptot(W),Tc=110℃	Ptot(W),Tc=25℃	Qc(nC),TJ=25℃	VF（V）Tj=175℃max	VF（V）Tj=175℃typ	VF（V）Tj=25℃ typ	VF（V）Tj=25℃max	Vrrm(V)	Series	Speed	Diode Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Capacitance @ Vr, F	Diode Configuration	Reverse Recovery Time (trr)
	Mfr. Part # G3S12015P Twicea Part # 3578-352-G3S12015P	Global Power Technology-GPT	DIODE SIL CARB 1.2KV 42A TO247AC Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-247-2	TO-247AC	-	-	-	-	-	-	-	-	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	-	-	-	-	-	-	-	-	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 1200 V	1.7 V @ 15 A	-55°C ~ 175°C	1200 V	42A	1379pF @ 0V, 1MHz	-	0 ns
G3S12015P 3578-352-G3S12015P Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G5S12010PM Twicea Part # 3578-352-G5S12010PM	Global Power Technology-GPT	DIODE SIL CARB 1.2KV 33A TO247AC Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-247-2	TO-247AC	Single	-	-	-	14.7（135℃）	10（153.5℃）	31	120	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	58	134	55（VR=800V）	-	-	-	-	1200	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 1200 V	1.7 V @ 10 A	-55°C ~ 175°C	1200 V	33A	825pF @ 0V, 1MHz	-	0 ns
G5S12010PM 3578-352-G5S12010PM Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G5S12010D Twicea Part # 3578-352-G5S12010D	Global Power Technology-GPT	DIODE SIL CARB 1.2KV 30.9A TO263 Datasheet Compare		Min.:1 Mult.:1	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263	Single	-	-	-	13.7(135℃)	10(151℃)	29.2	120	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	52	120	55（VR=800V）	-	-	-	-	1200	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 1200 V	1.7 V @ 10 A	-55°C ~ 175°C	1200 V	30.9A	825pF @ 0V, 1MHz	-	0 ns
G5S12010D 3578-352-G5S12010D Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G5S6504Z Twicea Part # 3578-352-G5S6504Z	Global Power Technology-GPT	DIODE SIL CARB 650V 15.45A 8DFN Datasheet Compare		Min.:1 Mult.:1	Surface Mount	8-PowerTDFN	8-DFN (4.9x5.75)	Single	-	-	-	5.7(135℃)	4（152℃）	12	24	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	22	52	10（VR=400V）	-	-	-	-	650	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.6 V @ 4 A	-55°C ~ 175°C	650 V	15.45A	181pF @ 0V, 1MHz	-	0 ns
G5S6504Z 3578-352-G5S6504Z Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G3S06510D Twicea Part # 3578-352-G3S06510D	Global Power Technology-GPT	DIODE SIL CARBIDE 650V 34A TO263 Datasheet Compare		Min.:1 Mult.:1	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263	Single	-	-	-	15.2(135℃)	10(154℃)	32.8	100	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	52	120	32（VR=400V）	-	-	-	-	650	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.7 V @ 10 A	-55°C ~ 175°C	650 V	34A	690pF @ 0V, 1MHz	-	0 ns
G3S06510D 3578-352-G3S06510D Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G4S06516BT Twicea Part # 3578-352-G4S06516BT	Global Power Technology-GPT	SIC SCHOTTKY DIODE 650V 16A 3-PI Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-247-3	TO-247AB	Double	25.9A (DC)	-	-	12*(135℃)	8*(154.5℃)			-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active			21（VR=400V）	-	-	-	-	650	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.7 V @ 8 A	-55°C ~ 175°C	650 V	-	-	1 Pair Common Cathode	0 ns
G4S06516BT 3578-352-G4S06516BT Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G3S06520A Twicea Part # 3578-352-G3S06520A	Global Power Technology-GPT	DIODE SIC 650V 56.5A TO220AC Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-220-2	TO-220AC	Single	-	-	-	21.7(135℃)	20（140℃)	47.7	150	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	68	156	51（VR=400V）	-	-	-	-	650	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.7 V @ 20 A	-55°C ~ 175°C	650 V	56.5A	1170pF @ 0V, 1MHz	-	0 ns
G3S06520A 3578-352-G3S06520A Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G4S06508DT Twicea Part # 3578-352-G4S06508DT	Global Power Technology-GPT	DIODE SIL CARBIDE 650V 24A TO263 Datasheet Compare		Min.:1 Mult.:1	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263	Single	-	-	-	11.3（135℃）	8（152℃）	24.1	60	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	43	100	21（VR=400V）	-	-	-	-	650	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.7 V @ 8 A	-55°C ~ 175°C	650 V	24A	395pF @ 0V, 1MHz	-	0 ns
G4S06508DT 3578-352-G4S06508DT Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G3S12010H Twicea Part # 3578-352-G3S12010H	Global Power Technology-GPT	DIODE SIC 1.2KV 16.5A TO220F Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-220-2 Full Pack	TO-220F	Single Core	-	10（111°C）	16.5	-	8.5（125°C）	-	140	100	3	0.7	50	Global Power Technology-GPT	TO-220F	Active	-	-	-	2.6	2.35	1.55	1.7	1200	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 1200 V	1.7 V @ 10 A	-55°C ~ 175°C	1200 V	16.5A	765pF @ 0V, 1MHz	-	0 ns
G3S12010H 3578-352-G3S12010H Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G3S06506D Twicea Part # 3578-352-G3S06506D	Global Power Technology-GPT	DIODE SIL CARB 650V 22.5A TO263 Datasheet Compare	100000 In Stock	Min.:1 Mult.:1	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263	Single	-	-	-	10.7（135℃）	6（159°C）	22.9	66	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	40	92	22（VR=400V）	-	-	-	-	650	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.7 V @ 6 A	-55°C ~ 175°C	650 V	22.5A	424pF @ 0V, 1MHz	-	0 ns
G3S06506D 3578-352-G3S06506D Global Power Technology-GPT RoHS : Package : - In Stock : 100000 1 : -
	Mfr. Part # G4S06506AT Twicea Part # 3578-352-G4S06506AT	Global Power Technology-GPT	DIODE SIC 650V 11.6A TO220AC Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-220-2	TO-220AC	-	-	6.2	11.6	-	6(127°C）	-	35	100	0.65	0.07	50	Global Power Technology-GPT	TO-220AC	Active	-	-	-	2.8	2.45	1.68	1.8	-	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.8 V @ 6 A	-55°C ~ 175°C	650 V	11.6A	181pF @ 0V, 1MHz	-	0 ns
G4S06506AT 3578-352-G4S06506AT Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G3S12020P Twicea Part # 3578-352-G3S12020P	Global Power Technology-GPT	DIODE SIC 1.2KV 64.5A TO247AC Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-247-2	TO-247AC	-	-	-	-	-	-	-	-	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	-	-	-	-	-	-	-	-	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 1200 V	1.7 V @ 20 A	-55°C ~ 175°C	1200 V	64.5A	2600pF @ 0V, 1MHz	-	0 ns
G3S12020P 3578-352-G3S12020P Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G4S06515HT Twicea Part # 3578-352-G4S06515HT	Global Power Technology-GPT	DIODE SIL CARB 650V 23.8A TO220F Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-220-2 Full Pack	TO-220F	-	-	-	-	-	-	-	-	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	-	-	-	-	-	-	-	-	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.7 V @ 15 A	-55°C ~ 175°C	650 V	23.8A	645pF @ 0V, 1MHz	-	0 ns
G4S06515HT 3578-352-G4S06515HT Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G5S12008PM Twicea Part # 3578-352-G5S12008PM	Global Power Technology-GPT	DIODE SIC 1.2KV 27.9A TO247AC Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-247-2	TO-247AC	Single	-	-	-		8（157.5℃）	27.3	96	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	59	136	38（VR=800V）	-	-	-	-	1200	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 1200 V	1.7 V @ 8 A	-55°C ~ 175°C	1200 V	27.9A	550pF @ 0V, 1MHz	-	0 ns
G5S12008PM 3578-352-G5S12008PM Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G5S12008A Twicea Part # 3578-352-G5S12008A	Global Power Technology-GPT	DIODE SIC 1.2KV 24.8A TO220AC Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-220-2	TO-220AC	Single	-	-	-	11.5（135℃）	8(153℃)	24.2	96	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	47	109	38（VR=800V）	-	-	-	-	1200	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 1200 V	1.7 V @ 8 A	-55°C ~ 175°C	1200 V	24.8A	550pF @ 0V, 1MHz	-	0 ns
G5S12008A 3578-352-G5S12008A Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G5S06508HT Twicea Part # 3578-352-G5S06508HT	Global Power Technology-GPT	DIODE SIL CARB 650V 20A TO220F Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-220-2 Full Pack	TO-220F	-	-	-	-	-	-	-	-	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	-	-	-	-	-	-	-	-	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.5 V @ 8 A	-55°C ~ 175°C	650 V	20A	550pF @ 0V, 1MHz	-	0 ns
G5S06508HT 3578-352-G5S06508HT Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G4S06510AT Twicea Part # 3578-352-G4S06510AT	Global Power Technology-GPT	DIODE SIC 650V 30.5A TO220AC Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-220-2	TO-220AC	-	-	-	-	-	-	-	-	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	-	-	-	-	-	-	-	-	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.7 V @ 10 A	-55°C ~ 175°C	650 V	30.5A	550pF @ 0V, 1MHz	-	0 ns
G4S06510AT 3578-352-G4S06510AT Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G3S06502H Twicea Part # 3578-352-G3S06502H	Global Power Technology-GPT	DIODE SIL CARBIDE 650V 9A TO220F Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-220-2 Full Pack	TO-220F	-	-	-	-	-	-	-	-	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	-	-	-	-	-	-	-	-	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.7 V @ 2 A	-55°C ~ 175°C	650 V	9A	123pF @ 0V, 1MHz	-	0 ns
G3S06502H 3578-352-G3S06502H Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -
	Mfr. Part # G5S6506Z Twicea Part # 3578-352-G5S6506Z	Global Power Technology-GPT	DIODE SIL CARB 650V 30.5A 8DFN Datasheet Compare	30000 In Stock	Min.:1 Mult.:1	Surface Mount	8-PowerTDFN	8-DFN (4.9x5.75)	Single	-	-	-	12.5（135℃）	6（163℃）	26.5	54	-	-	-	-	Global Power Technology-GPT	Tape & Box (TB)	Active	52	119	21（VR=400V）	-	-	-	-	650	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.5 V @ 6 A	-55°C ~ 175°C	650 V	30.5A	395pF @ 0V, 1MHz	-	0 ns
G5S6506Z 3578-352-G5S6506Z Global Power Technology-GPT RoHS : Package : - In Stock : 30000 1 : -
	Mfr. Part # G5S06505HT Twicea Part # 3578-352-G5S06505HT	Global Power Technology-GPT	DIODE SIL CARB 650V 18.5A TO220F Datasheet Compare		Min.:1 Mult.:1	Through Hole	TO-220-2 Full Pack	TO-220F	Single Core	-	9.5	18.5	-	5	-	90	100	2.5	0.2	50	Global Power Technology-GPT	T0-220F	Active	-	-	-	1.8	1.55	1.23	1.5	650	-	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	50 μA @ 650 V	1.5 V @ 5 A	-55°C ~ 175°C	650 V	18.5A	395pF @ 0V, 1MHz	-	0 ns
G5S06505HT 3578-352-G5S06505HT Global Power Technology-GPT RoHS : Package : - In Stock : - 1 : -

Discrete Semiconductor Products

Diodes - Rectifiers - Single definition: Diodes - Rectifiers - Single Product Listing: G3S12015P,G5S12010PM,G5S12010D,G5S6504Z,G3S06510D.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Diodes - Rectifiers - Single has 422 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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Discrete Semiconductor Products