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| Image | Part # | Manufacturer | Description | Availability | Pricing | Quantity | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Material | Diode Element Material | Number of Terminals | Exterior Housing Material | Cable cross-section | Diameter of incoming cable | Forward Voltage-Max (VF) | Gross weight | Gross Weight | Ihs Manufacturer | Installation hole diameter | Mfr | Nominal voltage | Number of Elements | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Power Dissipation (Max) | Rohs Code | Shipping Package size/quantity | Transport packaging size/quantity | Transport Packaging size/quantity | Operating temperature | Operating Temperature | Packaging | JESD-609 Code | Part Status | ECCN Code | Connector type | Type | Terminal Finish | Color | Applications | Additional Feature | HTS Code | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Depth | Reach Compliance Code | Current rating | Frequency | Time@Peak Reflow Temperature-Max (s) | Output | Reference Standard | JESD-30 Code | Configuration | Number of Channels | Polarization | Diode Type | Case Connection | Accuracy | Output Current-Max | Fuse type | Number of Phases | Operating Temperature Range | Rated current | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Sensor Type | Non-rep Pk Forward Current-Max | Reverse Current-Max | For Measuring | Rated voltage | Breakdown Voltage-Min | Reverse Recovery Time-Max | Reverse Test Voltage | Output Range | 2nd Connector Number of Positions Loaded | Cavity C | Diameter | Length |
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  | Mfr. Part #SBL3060CTTwicea Part #16052-350-SBL3060CT | Galaxy Semi-Conductor Co Ltd |
Description: Rectifier Diode,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 3 | 2 | - | - | 0.75 V | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | FREE WHEELING DIODE | - | - | SINGLE | THROUGH-HOLE | - | - | unknown | - | - | - | - | - | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | - | - | RECTIFIER DIODE | - | - | 15 A | - | 1 | - | - | 60 V | TO-220AB | - | 200 A | 100 μA | - | - | 60 V | - | 60 V | - | GENERAL PURPOSE | - | - | - | ||
| SBL3060CT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SF28Twicea Part #16052-350-SF28 | Galaxy Microelectronics |
Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 2A; VFM MAX (V): 1.7V; @ IF (A): 2A; IFSM MAX (A): 50A; IR MAX (UA): 10uA; @VR (V): 600V; TRR MAX (NS): 35ns; Package: DO-15
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 2 | 1 | - | - | 1.7 V | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | 125 °C | -55 °C | PLASTIC/EPOXY | - | ROUND | LONG FORM | Active | DO-15 | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | 8541.10.00.80 | - | AXIAL | WIRE | - | - | unknown | - | - | - | - | - | O-PALF-W2 | SINGLE | - | - | RECTIFIER DIODE | ISOLATED | - | 2 A | - | 1 | - | - | 600 V | DO-15 | - | 50 A | 5 μA | - | - | - | 0.035 μs | 600 V | - | SUPER FAST RECOVERY | - | - | - | ||
| SF28 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RB521S-30Twicea Part #16052-350-RB521S-30 | Galaxy Microelectronics |
Description: Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 0.2; VFM Max (V): 0.5V; @ IF (A): 0.2A; IR Max (uA): 30uA; @VR (V): 10V; Pin: F1; Package: SOD-523
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | 0.5 V | 0.71 | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | 125 °C | - | PLASTIC/EPOXY | SOD-523, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | SOD-523 | - | Yes | - | 48*31.5*27/20000 | - | -40 …+125 °C | - | - | e3 | - | EAR99 | - | - | TIN | - | - | - | 8541.10.00.70 | - | DUAL | FLAT | - | - | unknown | - | - | - | - | - | R-PDSO-F2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.2 A | Melting insert series S1035 | 1 | - | 5 A | 30 V | - | - | 1 A | 30 μA | - | 32 (DC) V | - | - | 10 V | - | GENERAL PURPOSE | - | - | - | ||
| RB521S-30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SS510ATwicea Part #16052-350-SS510A | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | 0.85 V | 0.71 | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | 32 (DC) V | - | 150 °C | -55 °C | PLASTIC/EPOXY | R-PDSO-C2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | 48*31.5*27/20000 | - | -40 …+125 °C | - | - | - | - | EAR99 | - | - | - | - | - | - | 8541.10.00.80 | - | DUAL | C BEND | NOT SPECIFIED | - | unknown | 20 A | - | NOT SPECIFIED | - | - | R-PDSO-C2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 5 A | S1035 series fusible insert | 1 | - | - | 100 V | - | - | 150 A | 250 μA | - | - | - | - | - | - | GENERAL PURPOSE | - | - | - | ||
| SS510A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #D25XB80Twicea Part #16052-350-D25XB80 | Galaxy Microelectronics |
Description: Bridge Rectifier Diode, 25A, 800V V(RRM),
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | - | - | 4 | - | - | 1.05 V | - | 28.60 | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | 150 °C | - | - | - | - | - | Contact Manufacturer | - | - | Yes | 42*28*23.5/500 | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | 260 | - | unknown | - | - | - | - | - | - | BRIDGE, 4 ELEMENTS | - | - | BRIDGE RECTIFIER DIODE | - | - | 25 A | - | 1 | - | - | 800 V | - | - | 350 A | - | - | - | 800 V | - | - | - | - | - | - | - | ||
| D25XB80 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RB160M-30Twicea Part #16052-350-RB160M-30 | Galaxy Microelectronics |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, SOD-123, 2 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | connector housing - PVC-45P | SILICON | 2 | 1 | 3 x 0.75 (42 strands x 0.15mm) mm2 | - | 0.48 V | 193.00 | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | 250 V | - | 125 °C | - | PLASTIC/EPOXY | SOD-123, 2 PIN | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | 48*32*27/100 | - | - | - | - | - | - | - | CEE7/7 angle - IEC C13 (Female) | - | - | - | - | HIGH RELIABILITY | - | - | DUAL | GULL WING | - | - | unknown | - | - | - | - | - | R-PDSO-G2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 1 A | - | 1 | - | - | 30 V | - | - | 30 A | 50 μA | - | - | - | - | 30 V | 0.4 W | GENERAL PURPOSE | - | sheath - 6.5 …6.8 mm | 1800 mm | ||
| RB160M-30 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MUR1060Twicea Part #16052-350-MUR1060 | Galaxy Microelectronics |
Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 10A; VFM MAX (V): 1.5V; @ IF (A): 10A; IFSM MAX (A): 125A; IR MAX (UA): 10uA; @VR (V): 600V; TRR MAX (NS): 50ns; Package: TO-220AC
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 2 | 1 | - | up to 9.8 mm | 1.5 V | - | 0.64 | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | 12.7 mm | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Active | TO-220AC | - | - | - | - | 48*32*22.5/10000 | - | - | - | - | - | EAR99 | - | Plastic cable gland SB series (budget) | - | black | - | - | 8541.10.00.80 | - | SINGLE | THROUGH-HOLE | - | 10.2 mm | unknown | - | - | - | - | MIL-STD-202 | R-PSFM-T2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 10 A | - | 1 | -20...+70 °C | - | 600 V | TO-220AC | - | 100 A | 10 μA | - | - | 600 V | 0.05 μs | 600 V | - | SUPER FAST RECOVERY | - | - | - | ||
| MUR1060 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MBRD10150CTGTwicea Part #16052-350-MBRD10150CTG | Galaxy Microelectronics |
Rectifier Diode,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | - | - | - | - | - | - | Active | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MBRD10150CTG | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BAS40WSTwicea Part #16052-350-BAS40WS | Galaxy Microelectronics |
Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 40V; IAV Max (A): 0.2A; VFM Max (V): 0.5V; @ IF (A): 0.01A; IR Max (uA): 0.2uA; @VR (V): 30V; TRR Max (ns): 5ns; Pin: F1; Package: SOD-323
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | 1 V | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | 125 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | SOD-323 | - | Yes | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | 8541.10.00.70 | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | - | NOT SPECIFIED | - | MIL-STD-202 | R-PDSO-G2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.2 A | - | 1 | - | - | 40 V | - | - | 0.6 A | 0.2 μA | - | - | - | 0.005 μs | 30 V | 0.2 W | FAST RECOVERY | - | - | - | ||
| BAS40WS | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BAT46WTwicea Part #16052-350-BAT46W | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | 1 V | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | 125 °C | - | PLASTIC/EPOXY | R-PDSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | 8541.10.00.70 | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | - | NOT SPECIFIED | - | - | R-PDSO-G2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.15 A | - | 1 | - | - | 100 V | - | - | 0.75 A | 5 μA | - | - | 100 V | - | 75 V | 0.2 W | FAST RECOVERY | - | - | - | ||
| BAT46W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MDA200-12Twicea Part #16052-350-MDA200-12 | Galaxy Semi-Conductor Co Ltd |
Description: Rectifier Diode,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 3 | - | - | - | 1.6 V | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | 2 | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | FLANGE MOUNT | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | GENERAL PURPOSE | - | - | - | UPPER | UNSPECIFIED | - | - | unknown | - | - | - | - | - | R-PUFM-X3 | COMMON ANODE, 2 ELEMENTS | - | - | RECTIFIER DIODE | ISOLATED | - | 200 A | - | 1 | - | - | 1200 V | - | - | 3000 A | 5000 µA | - | - | - | - | - | - | - | - | - | - | ||
| MDA200-12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #ZQ50K4L2Twicea Part #16052-350-ZQ50K4L2 | Galaxy Microelectronics |
Rectifier Diode,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 1 | - | - | - | 1.1 V | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 1 | 215 °C | -55 °C | METAL | - | ROUND | PRESS FIT | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | GENERAL PURPOSE | - | - | - | UPPER | PIN/PEG | - | - | unknown | - | - | - | - | - | O-MUPF-P1 | SINGLE | - | - | RECTIFIER DIODE | CATHODE | - | 50 A | - | 1 | - | - | 400 V | - | - | 500 A | 100 µA | - | - | - | - | - | - | - | - | - | - | ||
| ZQ50K4L2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #ZQ50A4L2Twicea Part #16052-350-ZQ50A4L2 | Galaxy Semi-Conductor Co Ltd |
Description: Rectifier Diode,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 1 | - | - | - | 1.1 V | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | 1 | 215 °C | -55 °C | METAL | - | ROUND | PRESS FIT | Contact Manufacturer | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | GENERAL PURPOSE | - | - | - | UPPER | PIN/PEG | - | - | unknown | - | - | - | - | - | O-MUPF-P1 | SINGLE | - | - | RECTIFIER DIODE | ANODE | - | 50 A | - | 1 | - | - | 400 V | - | - | 500 A | 100 µA | - | - | - | - | - | - | - | - | - | - | ||
| ZQ50A4L2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BAV18Twicea Part #16052-350-BAV18 | Galaxy Microelectronics |
Description: Surface Mount Small Signal Switching Diode; Configuration: Single; VRRM Max (V): 60; IAV Max (A): 0.25; VFM Max (V): 1; @ IF (A): 0.1; IR Max (UA): 0.1; @VR (V): 50; TRR Max (NS): 50; Package: DO-35
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | 2 | - | - | - | 1 V | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | 1 | 175 °C | - | GLASS | - | ROUND | LONG FORM | Active | DO-35 | 0.5 W | Yes | - | - | - | - | - | - | - | - | - | - | - | - | - | GENERAL PURPOSE | - | - | - | AXIAL | WIRE | 260 | - | unknown | - | - | - | - | - | O-LALF-W2 | SINGLE | - | - | RECTIFIER DIODE | ISOLATED | - | 0.25 A | - | 1 | - | - | 60 V | DO-35 | - | 1 A | 0.1 µA | - | - | - | 0.05 µs | 50 V | - | - | - | - | - | ||
| BAV18 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #FDB105STwicea Part #16052-350-FDB105S | Galaxy Semi-Conductor Co Ltd |
Description: Bridge Rectifier Diode, 1A, 600V V(RRM),
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | - | - | - | - | - | - | 1.1 V | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | 4 | 125 °C | - | - | - | - | - | Contact Manufacturer | - | - | Yes | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | 260 | - | unknown | - | - | - | - | - | - | BRIDGE, 4 ELEMENTS | - | - | BRIDGE RECTIFIER DIODE | - | - | 1 A | - | 1 | - | - | 600 V | - | - | 30 A | - | - | - | 600 V | - | - | - | - | - | - | - | ||
| FDB105S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SS55BTwicea Part #16052-350-SS55B | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | - | - | - | 0.65 V | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | 1 | 125 °C | -55 °C | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | e3 | - | EAR99 | - | - | MATTE TIN | - | GENERAL PURPOSE | - | 8541.10.00.80 | - | DUAL | C BEND | - | - | unknown | - | - | - | - | - | R-PDSO-C2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 5 A | - | 1 | - | - | 50 V | - | - | 150 A | 500 µA | - | - | 50 V | - | 50 V | - | - | - | - | - | ||
| SS55B | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #US3DTwicea Part #16052-350-US3D | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode, 1 Element, 3A, 200V V(RRM),
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 2 | 1 | - | - | 1 V | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | 150 °C | -55 °C | PLASTIC/EPOXY | R-PDSO-C2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | Yes | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | 8541.10.00.80 | - | DUAL | C BEND | 260 | - | unknown | - | - | - | - | - | R-PDSO-C2 | SINGLE | - | - | RECTIFIER DIODE | - | - | 3 A | - | 1 | - | - | 200 V | - | - | 100 A | 10 μA | - | - | - | 0.05 μs | - | - | EFFICIENCY | - | - | - | ||
| US3D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #R4000FTwicea Part #16052-350-R4000F | Galaxy Microelectronics |
Fast Recovery Rectifier, VRRM MAX (V): 4000V; IAV MAX (A): 0.2A; VFM MAX (V): 6.5V; @ IF (A): 0.2A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 4000V; TRR MAX (NS): 500ns; Package: DO-15
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | NO | - | - | SILICON | - | 1 | - | - | 6.5 V | - | - | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | - | - | - | - | 150 °C | - | - | - | - | - | Active | DO-15 | - | Yes | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | - | - | - | - | 260 | - | unknown | - | - | - | - | - | - | SINGLE | - | - | RECTIFIER DIODE | - | - | 0.2 A | - | 1 | - | - | 4000 V | - | - | 30 A | - | - | - | - | 0.5 μs | - | - | - | - | - | - | ||
| R4000F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BAV70TTwicea Part #16052-350-BAV70T | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Datasheet
Compare
| Min.:1 Mult.:1 | Chassis Mount | Module | YES | Module | - | SILICON | 3 | 2 | - | - | - | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | Advantech Corp | - | - | 150 °C | -65 °C | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | -20°C ~ 55°C | Box | - | Active | EAR99 | - | - | - | - | - | - | 8541.10.00.70 | 3.6V | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | DC ~ 8kHz | NOT SPECIFIED | Current | - | R-PDSO-G3 | COMMON CATHODE, 2 ELEMENTS | 1 | Unidirectional | RECTIFIER DIODE | - | ±1% | 0.155 A | - | - | - | - | 85 V | - | Magnetoresistive | - | - | DC | - | - | 0.004 μs | - | 0.15 W | - | 75A | - | - | ||
| BAV70T | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BAV199Twicea Part #16052-350-BAV199 | Galaxy Semi-Conductor Co Ltd |
Rectifier Diode,
Datasheet
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| Min.:1 Mult.:1 | - | - | YES | - | - | SILICON | 3 | 2 | - | - | 1.25 V | - | - | GALAXY SEMI-CONDUCTOR CO LTD | - | - | - | - | 150 °C | -65 °C | PLASTIC/EPOXY | R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Active | - | - | - | - | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | 8541.10.00.70 | - | DUAL | GULL WING | NOT SPECIFIED | - | unknown | - | - | NOT SPECIFIED | - | - | R-PDSO-G3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | - | - | RECTIFIER DIODE | - | - | 0.16 A | - | 1 | - | - | 85 V | - | - | 4 A | 0.005 μA | - | - | 85 V | 0.003 μs | 75 V | 0.25 W | GENERAL PURPOSE | - | - | - | ||
| BAV199 |
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