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MBR10200CT
Yangzhou Yangjie MBR10200CT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220AB | |
| Package | Tube | |
| Mfr | Yangzhou Yangjie Electronic Technology Co.,Ltd | |
| Product Status | Active | |
| Current - Average Rectified (Io) (per Diode) | 10A | |
| Series | - | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 100 µA @ 200 V | |
| Voltage - Forward (Vf) (Max) @ If | 900 mV @ 5 A | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Diode Configuration | 1 Pair Common Cathode |
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